Abstract
Substitution of Gd 3+ for Eu 2+ ions in EuTe leads to the introduction of Gd 5d electrons to the conduction band and antiferromagnetic order of EuTe (Heisenberg magnetic semiconductor) can be replaced by ferromagnetic state due to RKKY interaction. The layers were grown by MBE method on BaF 2 (1 1 1) substrate. Layer of Te deposited on top of (EuGd)Te protects surface of oxidation. Heating in 320 °C leads to Te atoms desorption and to improvement of the layer electronic structure. Additional Gd atoms were sequentially deposited on the layer of (PbGd)Te and set of Fano resonance curves were observed for ions of Gd. The Fano type photoemission resonance corresponding to the 4d–4f transitions were studied for Eu and Gd.
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