Modulating the photoelectric properties of molybdenum disulfide (MoS2) through defect engineering and heterometal doping is crucial for its potential applications in electronic and optoelectronic devices. Herein, a comprehensive overview is provided on the advancements of two-dimensional materials with a ternary structure comprising sulfur (S), molybdenum (Mo), and tungsten (W) in the field of optoelectronic device. A ternary W-P/MoS2 (P: direct current target power) nanomaterial was designed and synthesized using W interior doping engineering induced S vacancies. The experimental results reveal that the introduction of W metal causes lattice distortion in MoS2, leading to the formation of S vacancies within W-P/MoS2. Compared to pure MoS2, W-P/MoS2 with S vacancies demonstrates enhanced reverse saturable absorption and optical limiting. Density functional theory calculations suggest that the S vacancies introduced by W doping in MoS2 introduce defect energy levels, which are believed to be the reason for the improved nonlinear optical (NLO) performance of W-P/MoS2. Furthermore, transient absorption spectroscopy reveals the photophysical model of carrier relaxation and presents an explanation for the optimized NLO properties of W-P/MoS2. This work provides a novel strategy for the design and synthesis of ternary transition metal dichalcogenides and modulating the NLO properties by doping transition metal-mediated vacancies.
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