Characterization and ohmic contact properties of indium tin-oxide films prepared on p-type GaN using electron-cyclotron-resonance plasma-sputter deposition

Abstract

The optical and electrical properties of indium tin oxide (ITO) films deposited using electron cyclotron resonance (ECR) plasma-sputter deposition and the ohmic contact properties between the ITO films and p-type gallium nitride (p-GaN) were evaluated. The electrical properties of the ITO films were evaluated in terms of the dependence on the tin (IV) oxide (SnO2) content of the ITO target and radio frequency (RF) power. The ohmic contact properties between the ITO films and p-GaN were also characterized by varying the top-surface Mg concentration of the p-GaN substrate. An ohmic contact was achieved without post-annealing treatment by depositing the film on a p-GaN high-dope substrate with a top-surface Mg concentration of 2.0 × 1020 cm−3 under low RF-power deposition using an ITO sputter target with 10 wt.% SnO2. The interface between the ITO films and p-GaN that achieved an ohmic contact was observed using scanning transmission electron microscopy (STEM) and was very smooth with no crystal disorder. This indicates that the crystallinity of the ITO films and p-GaN surface is a factor affecting ohmic-contact properties. The inter-diffusion between the ITO films and p-GaN surface was also evaluated using transmission electron microscopy energy dispersive X-ray spectroscopy (TEM-EDS), and no inter-diffusion was observed.