Magnetron Sputtering Of Target Research Articles

Synthesis and Characterization of Boron Nitride Thin Films Deposited by High-Power Impulse Reactive Magnetron Sputtering

In the present research, hexagonal boron nitride (h-BN) films were deposited by reactive high-power impulse magnetron sputtering (HiPIMS) of the pure boron target. Nitrogen was used as both a sputtering gas and a reactive gas. It was shown that, using only nitrogen gas, hexagonal-boron-phase thin films were synthesized successfully. The deposition temperature, time, and nitrogen gas flow effects were studied. It was found that an increase in deposition temperature resulted in hydrogen desorption, less intensive hydrogen-bond-related luminescence features in the Raman spectra of the films, and increased h-BN crystallite size. Increases in deposition time affect crystallites, which form larger conglomerates, with size decreases. The conglomerates’ size and surface roughness increase with increases in both time and temperature. An increase in the nitrogen flow was beneficial for a significant reduction in the carbon amount in the h-BN films and the appearance of the h-BN-related features in the lateral force microscopy images.

Refractory high entropy TiTaZrHfW-N/Si3N4 nano-layered alloy thin film’s oxidation resistance

Refractory high entropy TiTaZrHfW-N/Si3-N4 nano-layered alloy thin films are investigated to study the effect of nano-layered architecture and silicon (Si) mean content on their structural, mechanical, thermal properties and oxidation behavior. The films are deposited using direct current (DC) magnetron sputtering of separate Si and TiTaZrHfW targets. The Si mean content is controlled by tailoring the power discharge applied to the Si target. The deposition process led to a nano-layered architecture where Si3N4 (amorphous) and TiTaZrHfW-N (nano-crystalized NaCl FCC type structure) are alternated. By increasing the thickness of Si3N4 nano-layers, the Si mean content increases. All coatings are found to have good thermal stability after annealing under vacuum at 900 °C. Increasing Si mean content reduces the film’s hardness; however, the annealing treatment at 900 °C improves it. A super-hardness of 41 GPa is found for the post-annealed Si-free film. Si3N4 nano-layers enhance the oxidation resistance at elevated temperatures of 600, 700, and 800 °C. This oxidation resistance is further enhanced by increasing the nano-layer’s period and also by increasing the density of the films.

Microstructure, mechanical and tribological characterization of magnetron sputtering ZrN and ZrAlN coatings

In this research paper, mechanical and tribological characterization of novel high wear-resistant ZrN-ZrAlN coatings are presented. The varying concentrations of AlN is chosen to evaluate the influence of AlN the surface morphological, nanomechanical, and tribological properties of the composite coating. The coatings were developed on D9 steel substrates using nitrogen reactive gas radio frequency (RF) magnetron sputtering of zirconium and aluminium targets in an argon plasma. Variable power density for the aluminium target and constant power density for zirconium, was used to obtain in a systematic way, the variable concentration of AlN in the coating. Surface morphological studies were carried out to evaluate composition and crystal structure using X-ray diffraction (GIXRD), Raman spectroscopy, and energy-dispersive X-ray spectroscopy (EDS). Coatings display a polycrystalline structure, but the level of crystallinity decreases with higher AlN concentration. Nanomechanical and nano scratch testing, along with tribological experimental studies were performed to comprehensively analyse performance of the developed coatings. Higher hardness of composite coating is achieved with optimal concentration of AlN in ZrN-ZrAlN coating. Adhesion strength of the coatings increased with the increase in the concentration of AlN. ZrN-ZrAlN coatings depicted low wear, however coatings containing AlN exhibits superior wear resistance.

ZnO thin films co-doped with III-valence metals and halogens: theory and experiment

The efficiency of metal-halogen co-doping of ZnO thin films deposited by DC magnetron sputtering of ceramic targets has been studied theoretically and experimentally. The influence of deposition temperature (300 − 900 K range), ZnX2 pressure (10−10−1 atm), Me2O3 dopant concentration (10−3 − 10 mol %), and Zn pressure (10−14 − 10−6 atm) on the composition of ZnO − Me2O3 − ZnX2 − Zn (Me = Al, Ga, In; X = F, Cl, Br, I) systems has been analyzed theoretically. The surface migration velocity of oxides and halides is also estimated for a wide temperature range. According to the calculation results, the optimal deposition conditions have been recommended. ZnO thin films co-doped with Al+Cl, Ga+Cl, Ga+Br, Ga+I, and In+Cl were deposited using ZnO:Me:X ceramic targets sintered by chemical vapor transport based on halides. The influence of the stoichiometric deviation of ceramic targets, the concentration of halogens, and metal impurities on thin films’ electrical, structural, compositional, and optical properties has been investigated. It is shown that Ga+Cl+Zn co-doping is the most promising. This co-doping increases both the structural perfection of films (electron mobility) and doping efficiency by Ga (charge carrier concentration), reducing the resistivity of thin films by two times compared to the use of classical ZnO:Ga ceramic targets. The optimal stoichiometric deviation of ZnO:Me:X ceramics targets, corresponding to the highest electron mobility and figure of merit of thin films, has been recommended.

Reactive magnetron deposition of YAG:Ce phosphor coatings in the metallic mode

The possibility of YAG:Ce3+ coatings phosphor formation by reactive magnetron deposition during sputtering of metal targets in an atmosphere of argon and oxygen activated by a radio-frequency source of inductively coupled plasma has been studied. The installation consists of three middle-frequency magnetrons with Y, Al and Ce targets with power of 1000, 1570 and 150 W, respectively. The (Y–Al–O):Ce coatings were deposited in metal and oxide sputtering modes of yttrium and aluminium targets. The coating deposition rate on the planetary rotating substrates in the metallic sputtering mode reaches of 0.67 nm/s. This is about an order of magnitude higher compared to the oxide sputtering mode and the method of radio-frequency magnetron sputtering of ceramic targets commonly used to deposit such coatings.Characterization of the elemental and phase composition of the coatings showed the YAG:Ce crystal structure formation during annealing both in air at 1100 °C and in a nitrogen atmosphere at 1200 °C. Cathodo- and photoluminescent spectroscopy was used for study of YAG:Ce thin films emission properties. The emission properties of YAG:Ce correspond to the radiation transition in Ce3+ ions. It was found that the intensity of both types of luminescence turned out to be slightly higher for samples annealed in air. It enhanced with increasing coating thickness in the considered range from 1.8 to 7.0 μm. The suggested approach could be potentially used for luminescent coatings formation with high level of the emission properties.

Influence of Sputtering Power on the Properties of Magnetron Sputtered Tin Selenide Films.

The ecofriendly tin selenide (SnSe) is expected to find multiple applications in optoelectronic, photovoltaic, and thermoelectric systems. This work is focused on the thermoelectric properties of thin films. SnSe single crystals exhibit excellent thermoelectric properties, but it is not so in the case of polycrystalline bulk materials. The investigations were motivated by the fact that nanostructuring may lead to an improvement in thermoelectric efficiency, which is evaluated through a dimensionless figure of merit, ZT = S2 σ T/λ, where S is the Seebeck coefficient (V/K), σ is the electrical conductivity (S/m), λ is the thermal conductivity (W/mK), and T is the absolute temperature (K). The main objective of this work was to obtain SnSe films via magnetron sputtering of a single target. Instead of common radiofrequency (RF) magnetron sputtering with a high voltage alternating current (AC) power source, a modified direct current (DC) power supply was employed. This technique in the classical version is not suitable for sputtering targets with relatively low thermal and electrical conductivity, such as SnSe. The proposed solution enabled stable sputtering of this target without detrimental cracking and arcing and resulted in high-quality polycrystalline SnSe films with unprecedented high values of ZT equal to 0.5 at a relatively low temperature of 530 K. All parameters included in ZT were measured in one setup, i.e., Linseis Thin Film Analyzer (TFA). The SnSe films were deposited at sputtering powers of 120, 140, and 170 W. They had the same orthorhombic structure, as determined by X-ray diffraction (XRD), but the thickness and microstructure examined by scanning electron microscopy (SEM) were dependent on the sputtering power. It was demonstrated that thermoelectric efficiency improved with increasing sputtering power and stable values were attained after two heating-cooling cycles. This research additionally provides further insights into the DC sputtering process and opens up new possibilities for magnetron sputtering technology.

Oxidation Performance of Nano-Layered (AlTiZrHfTa)Nx/SiNx Coatings Deposited by Reactive Magnetron Sputtering.

This work uses the direct current magnetron sputtering (DCMS) of equi-atomic (AlTiZrHfTa) and Si targets in dynamic sweep mode to deposit nano-layered (AlTiZrHfTa)Nx/SiNx refractory high-entropy coatings (RHECs). Transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are used to investigate the effect of Si addition on the oxidation behavior of the nano-layered coatings. The Si-free nitride coating exhibits FCC structure and columnar morphology, while the Si-doped nitride coatings present a FCC (AlTiZrHfTa)N/amorphous-SiNx nano-layered architecture. The hardness decreases from 24.3 ± 1.0 GPa to 17.5 ± 1.0 GPa because of the nano-layered architecture, whilst Young's modulus reduces from 188.0 ± 1.0 GPa to roughly 162.4 ± 1.0 GPa. By increasing the thickness of the SiNx nano-layer, kp values decrease significantly from 3.36 × 10-8 g2 cm-4 h-1 to 6.06 × 10-9 g2 cm-4 h-1. The activation energy increases from 90.8 kJ·mol-1 for (AlTiZrHfTa)Nx nitride coating to 126.52 kJ·mol-1 for the (AlTiZrHfTa)Nx/SiNx nano-layered coating. The formation of a FCC (AlTiZrHfTa)-Nx/a-SiNx nano-layered architecture results in the improvement of the resistance to oxidation at high temperature.

Preparation of wide bandgap CuGaSe2 absorbers and solar cells by sputtering a selenium-rich ceramic target and annealing in a selenium-free atmosphere

CuGaSe2 (CGSe) material possesses a wide bandgap of approximately 1.7 eV, making it a promising prospect for top cells in tandem solar cells. Depositing CGSe precursor films by magnetron sputtering of a selenium-rich ceramic target is easy to operate and control. After annealing the precursor films at different temperatures in a selenium-free argon atmosphere, avoiding the use of toxic H2Se. To achieve an absorber exhibiting appropriate performance, the morphologies, phase composition, absorption characteristics, roughness, lattice structure, and work function of CGSe absorbers annealed at different temperatures were investigated. The CGSe absorber annealed at 550 °C showed uniform grain, a single-phase composition, high absorbance, flat surface, and compact crystal structure. The absorber annealed at excessive temperature led to the formation of Cu2-xSe, inducing defects and carrier recombination. The work function of CGSe absorber annealed at 590 °C increases, resulting in the misalignment of its band with the Mo back contact. The enhancement of absorber contributes positively to solar cell device performance. CGSe solar cells prepared using the absorber annealed at 550 °C exhibited excellent photoelectric properties. The increase in minority carrier lifetime and recombination resistance improves the transport characteristics of carriers.

Stoichiometry of ZnO polycrystalline layers. Localization of vacancies

Nonstoichiometric ZnO1-x phases with oxygen deficiency at grain boundaries (GBs) in polycrystalline ZnO layers are a typical damaged layer formed during the synthesis or subsequent storage. In this case, the processes of adsorption-desorption of gases are the basic phenomenon used in the analysis of gas composition. MGB layers also play an important role in creating transparent electrodes for transparent electronics and optoelectronics devices. This makes it relevant to study the generalization of research data on non-stechiometric structures in various applications. Purpose: the research carried out is devoted to the analysis of the formation processes of non-stoichiometric ZnO1-x surface phases in gas sensors, transparent electrodes, ceramic targets for magnetron sputtering, and in light-emitting structures. Research is aimed at finding ways to control and optimizing the parameters of non-stoichiometric ZnO1-x phases. The structural features, electrical, optical, and emissive properties of the layers were studied depending on the stoichiometry of the material. The issues of transformation of the structure of grain boundaries in ZnO-based polycrystalline layers depending on the formation conditions and external influences are considered. The relationship between the mechanisms of carrier transport and the processes of formation of nonstoichiometric phases on the MG has been studied. The dependences of the luminescence spectra of ZnO layers on the density of oxygen vacancies were traced. The regularities of the formation of energy structures of magnetic grains in ZnO layers are considered. Establishment of patterns of formation and characteristics of non-stoichiometric phases on the MGB during the formation of various modifications of transparent electrodes. Study of ways to optimize the parameters of surface non-stoichiometric layers.

Sensitivity Enhancement of CO2 Sensors at Room Temperature Based on the CZO Nanorod Architecture.

Cobalt-doped ZnO (CZO) thin films were deposited on glass substrates at room temperature by radio frequency (RF) magnetron sputtering of a single target prepared with ZnO and Co3O4 powders. Changes in the crystallinity, morphology, optical properties, and chemical composition of the CZO thin films were investigated at various sputtering powers of 45, 60, and 75 W. All samples presented a hexagonal wurtzite-type structure with a preferential c-axis at the (002) plane, along with a distinct change in the strain values through X-ray diffraction patterns. Scanning electron and atomic force microscopy revealed uniform and dense deposition of nanorod CZO samples with a high surface roughness (RMS). The Hall mobility and carrier concentration increased with the introduction of Co+ ions into the ZnO matrix, as seen from the Hall effect study. The gradual increase of the power applied on the target source significantly affected the morphology of the CZO thin film, which is reflected in the CO2-sensing performance. The best gas response to CO2 was recorded for CZO-60 W with a response of 1.45 for 500 ppm CO2, and the response/recovery times were 72 and 35 s, respectively. The distinguishing feature of the CZO sensor is its ability to effectively and rapidly detect the CO2 target gas at room temperature (∼27 °C, RT).

Highly Sensitive Microarray Immunoassay for Multiple Mycotoxins on Engineered 3D Porous Silicon SERS Substrate with Silver Nanoparticle Magnetron Sputtering.

A high-throughput, rapid, and highly sensitive surface-enhanced Raman spectroscopy (SERS) microarray for screening multiple mycotoxins has been developed on a three-dimensional silver nanoparticle porous silicon (3D AgNP-Psi) SERS substrate, which was easy to be engineered by electrochemical etching and magnetron sputtering technology. The etching current density, etching waveform, and target material for magnetron sputtering have been investigated to obtain an optimal 3D SERS substrate. The optimized 3D AgNP-Psi SERS substrate showed an enhancement factor of 2.3 × 107 at 400 mA/cm2 constant current density etching for 20 s and Ag target magnetron sputtering for 200 nm thickness on the surface of Psi. The simulation electric field distribution showed the near-field enhancement can reach 3× higher than that of AuNPs. A protein microarray has been designed to screen multiple mycotoxins by AuNP Raman tags and a competitive immunoassay protocol on the surface of the 3D SERS substrate. The SERS protein microarray displayed wide linear detection ranges of 0.001-100 ng/mL for ochratoxin A, 0.01-100 ng/mL for aflatoxin B1, 0.001-10 ng/mL for deoxynivalenol, along with pg/mL low limit of detection, good recovery rates, repeatability, and reproducibility. The 3D SERS protein microarray is easily engineered and has a great potential application in medicine, environment, and food industry fields.

Anion Doping of Tungsten Oxide with Nitrogen: Reactive Magnetron Synthesis, Crystal Structure, Valence Composition, and Optical Properties

Anion doping of tungsten trioxide by nitrogen is used to obtain electrochrome cathode materials, the spectral transmittance of which can be controlled by the doping level. A series of samples was synthesized by reactive magnetron sputtering of a metal tungsten target in a mixture of argon, nitrogen, and oxygen gases, the flow rate of the latter was varied at a constant pressure of the gas mixture. Warm-colored tungsten oxynitride films were prepared at higher doping levels with their morphology and elemental composition characterized using scanning electron microscopy, crystal structure described using X-ray diffraction and the valence state of constituents revealed with X-ray photoelectron spectroscopy techniques. Optical properties were measured by making use of transmission spectrophotometry and spectroscopic ellipsometry. These extensive experimental studies revealed an increase in absorption towards shorter wavelengths below the wavelength of 0.5 µm with an increase in the doping level. At the same time, it was found that with an increase in the doping level, partial reduction of the tungsten occurs, and the fraction of non-stoichiometric oxygen steadily increases to half of the total oxygen content. It is a common belief that the imperfection of the doped material facilitates the intercalation of the material by electrolyte ions.

Plasma characteristics in deep oscillation magnetron sputtering of chromium target

A global model for deep oscillation magnetron sputtering (DOMS) discharge is established to investigate the plasma characteristics in the ionization region. Target voltage and current waveforms with micropulse on-time <i>τ</i><sub>on</sub> of 2–6 μs and charging voltage of 300–380 V are acquired and used as an input of the proposed model. The effects of micropulse on-time and charging voltage on the plasma are investigated. At <i>τ</i><sub>on</sub> = 2 μs, the DOMS plasma density oscillates with the discharge current waveform. The plasma is mainly composed of Ar<sup>+</sup> ions though the ionization fraction of Ar is only 2%. The proportion of Cr<sup>+</sup> ions is lower but has a relatively high ionization fraction of 12%, and Cr<sup>2+</sup> ions are negligible. The peak plasma density increases from 1.34×10<sup>18</sup> m<sup>–3</sup> at <i>τ</i><sub>on</sub> = 2 μs to 2.64×10<sup>18</sup> m<sup>–3</sup> at <i>τ</i><sub>on</sub> = 3 μs and the metal ionization fraction increases to 20%. Further increasing the on-time leads the peak density and ionization fraction to slightly change. When the charging voltage increases from 300 V to 380 V at <i>τ</i><sub>on</sub> = 6 μs, the peak plasma density increases linearly from 2.67×10<sup>18</sup> m<sup>–3</sup> to 3.90×10<sup>18</sup> m<sup>–3</sup>, and the metal ionization fraction increases from 21% to 28%. The gas rarefaction occurs in the ionization region for DOMS discharge. The gas density oscillates in the initial stage of macropulse, and 5–6 micropulses later it reaches dynamic equilibrium. The Ar density dynamics shows that the Ar consumption is mainly caused by electron impact ionization, followed by electron impact excitation, and the consumption rate caused by sputter wind is about 10% of the electron impact ionization. The typical metal self-sputtering phenomenon of high power impulse magnetron sputtering (HiPIMS) also appears in the DOMS discharge. The peak value of self-sputtering parameter increases linearly with the peak power density rising. This suggests that the peak power density is one of the important parameters to manipulate the metal self-sputtering process in the DOMS discharge. The peak value of self-sputtering parameter reaches up to 0.20, indicating that a certain degree of metal self-sputtering occurs. The plasma density and the ionization fraction of the depositing flux are improved, which relieves the shadowing effect during conventional magnetron sputtering as a result of low ionization degree of sputtered metal.

Growth of Highly Oriented (VNbMoTaW)S2 Layers.

Compositional tunability, an indispensable parameter for modifying the properties of materials, can open up new applications for van der Waals (vdW) layered materials such as transition-metal dichalcogenides (TMDCs). To date, multielement alloy TMDC layers are obtained via exfoliation from bulk polycrystalline powders. Here, we demonstrate direct deposition of high-entropy alloy disulfide, (VNbMoTaW)S2, layers with controllable thicknesses on free-standing graphene membranes and on bare and hBN-covered Al2O3(0001) substrates via ultra-high-vacuum reactive dc magnetron sputtering of the VNbMoTaW target in Kr and H2S gas mixtures. Using a combination of density functional theory calculations, Raman spectroscopy, X-ray diffraction, scanning transmission electron microscopy coupled with energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy, we determine that the as-deposited layers are single-phase, 2H-structured, and 0001-oriented (V0.10Nb0.16Mo0.19Ta0.28W0.27)S2.44. Our synthesis route is general and applicable for heteroepitaxial growth of a wide variety of TMDC alloys and potentially other multielement alloy vdW compounds with the desired compositions.

Особенности применения составной двухкомпонентной мишени с медными включениями при магнетронном распылении для создания мемристоров

The results of obtaining resistive memory elements and the study of their properties are presented. The samples were metal/dielectric/metal structures, the active layer of which was obtained by magnetron sputtering of a composite titanium-copper target. Electron microscopic analysis showed that the active layer after the transition to a low-resistance state has a vertically oriented morphology, indicating a filamentous switching mechanism. The volt-ampere characteristics and the effect of resistive switching are studied. It was found that the proposed method of obtaining a dielectric layer is suitable for the manufacture of memristors. In particular, it is demonstrated that the use of these films in the structure of a memristive memory element makes it possible to obtain a ratio of a state with a high electrical resistance to a state with a low electrical resistance of more than 102.

Study on the performance of titanium alloy-lined thin-walled vacuum chamber

HIAF-BRing, the main synchrotron accelerator of the High Intensity Heavy-Ion Accelerator Facility, requires an average pressure lower than 1 × 10 −9 Pa and the magnetic field increase rate of no less than 12 T/s to fulfill radioactive beam physics and high energy density physics experiments. To reduce the eddy current effect and the gap size of dipoles, a titanium alloy-lined thin-walled vacuum chamber with a wall thickness of 0.3 mm is proposed by IMP, which has been developed from the initial ceramic-lined vacuum chamber. By mechanical loading testing, when the internal stress of titanium alloy rings made by 3D selective laser melting (SLM) reaches 639 MPa, it is still within the elastic deformation range, in fact, the yield strength of the 3D printed titanium alloy material is 912 MPa. In order to reduce the pressure gradient inside the thin-walled vacuum chamber caused by the surface outgassing of the rings, TiZrV thin films have been deposited on the rings by planar target magnetron sputtering. Through TiZrV deposited on the rings, the pressure at the middle of the thin-walled vacuum chamber has been dropped from 1.5 × 10−9 Pa to 1.0 × 10−9 Pa. At the same time, as the magnets are continuously energized, the actual heating state of the thin-walled vacuum chamber has been also measured.

Research status of phase change memory and its materials

Phase change memory technology is a new technology in non-volatile memory technology. Phase change memory technology has many advantages, such as non-volatility, high reading and writing speeds, better data retention, and strong compatibility with CMOS technology, and has been paid attention to by many researchers. Phase change materials are mainly chalcogenide compound materials. Researchers have done a lot of research on Ge-Sb-Te, Ge-Te, and Sb-Te-based phase change materials and developed some new phase change material systems. In addition, researchers have carried out in-depth research on the phase transition mechanism, but the existing atomic umbrella jump theory, multiple ring theory, resonance bond theory, octahedral structure theory, etc. have not formed a unified understanding of the phase transition mechanism. At present, phase change memory is mainly prepared by magnetron sputtering of phase change material targets, which results in fast deposition and high purity of the prepared film. In this paper, based on the development of phase change storage materials, the system of phase change materials and its phase change mechanism, the phase transition mechanism of phase change memory, the preparation and characterization methods of phase change films, the industrialization progress, and other research work are reviewed.

Progress in manufacturing and processing of Al-Sc alloy targets

The development of the fifth-generation mobile communication technology (5G) puts forward higher requirements for radio frequency (RF) filters. Due to its higher frequency and larger bandwidth, bulk acoustic wave (BAW) filter will become the mainstream RF filter solution. Scandium doped aluminium nitride (AlScN) piezoelectric film has attracted much attention due to its excellent piezoelectric response coefficients and electromechanical coupling coefficients. The doped Sc concentration will directly affect the piezoelectric coefficient and electromechanical coupling coefficient of the film. The most common technique for producing AlScN thin films is magnetron sputtering of targets made of Al-Sc alloy. However, with the increase of Sc content, the solid-liquid solidification interval, the number of intermetallic compounds, and the brittleness of the material will all increase significantly. Additionally, it will result in component macro-segregation, uneven phase distribution, and poor processing deformability. Therefore, it is extremely difficult to manufacture and process Al-Sc alloy targets. The mainstream processes for preparing Al-Sc alloy targets are divided into direct reaction method and powder metallurgy method. This paper reviews the research progress in manufacturing and processing of Al-Sc alloy targets.

Hard and Highly Adhesive AlMgB14 Coatings RF Sputtered on Tungsten Carbide and High-Speed Steel

We report a new industrial application of aluminum magnesium boride AlMgB14 (BAM) coatings to enhance the hardness of tungsten carbide ceramic (WC-Co) and high-speed steel tools. BAM films were deposited by RF magnetron sputtering of a single dense stoichiometric ceramic target onto commercial WC-Co turning inserts and R6M5 steel drill bits. High target sputtering power and sufficiently short target-to-substrate distance were found to be critical processing conditions. Very smooth (6.6 nm RMS surface roughness onto Si wafers) and hard AlMgB14 coatings enhance the hardness of WC-Co inserts and high-speed R6M5 steel by a factor of two and three, respectively. Complete coating spallation failure occurred at a scratch adhesion strength of 18 N. High work of adhesion and low friction coefficient, estimated for BAM onto drill bits, was as high as 64 J/m2 and as low as 0.07, respectively, more than twice the surpass characteristics of N-doped diamond-like carbon (DLC) films deposited onto nitride high-speed W6Mo5Cr4V2 steel.

Crystallization features and physical properties of the thin-film heterostructure of lead zirconate titanate – lead oxide

Various diagnostic techniques aimed at studying the structure and physical properties (synchronous thermal analysis, atomic force microscopy operating in the current measurement mode, electron-probe X-ray spectral microanalysis, dynamic method for determining the pyroelectric response) were used to study the crystallization features and physical properties of the thin-film heterostructure PZT – PbO1+x formed by a two-stage technique of RF magnetron sputtering of a ceramic target. During the first stage, amorphous films were deposited on a “cold” platinized silicon substrate, while the second stage involved high-temperature annealing in air. It was shown that annealing of amorphous films and crystallization of the intermediate pyrochlore phase are accompanied by additional oxidation of the structure resulting in the formation of lead orthoplumbate and lead dioxide and additional oxidation of organic inclusions. The presence of a liquid phase of lead oxide contributes to the formation of the pyrochlore phase. It was found that lead oxide layers have significantly higher through conductivity than perovskite blocks. It was assumed that the increased conductivity of lead oxide layers is associated with lead dioxide, which has high conductive properties. Self-polarized thin films were detected to have an abnormal electrical response to the strobing thermal exposure, including the typical pyroelectric response, local photoconductivity shunted by layers of the perovskite phase, and through photoconductivity. The presence of photoconductivity is also associated with the conductive properties of lead dioxide