Abstract
The results of obtaining resistive memory elements and the study of their properties are presented. The samples were metal/dielectric/metal structures, the active layer of which was obtained by magnetron sputtering of a composite titanium-copper target. Electron microscopic analysis showed that the active layer after the transition to a low-resistance state has a vertically oriented morphology, indicating a filamentous switching mechanism. The volt-ampere characteristics and the effect of resistive switching are studied. It was found that the proposed method of obtaining a dielectric layer is suitable for the manufacture of memristors. In particular, it is demonstrated that the use of these films in the structure of a memristive memory element makes it possible to obtain a ratio of a state with a high electrical resistance to a state with a low electrical resistance of more than 102.
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