Research status of phase change memory and its materials

Abstract

Phase change memory technology is a new technology in non-volatile memory technology. Phase change memory technology has many advantages, such as non-volatility, high reading and writing speeds, better data retention, and strong compatibility with CMOS technology, and has been paid attention to by many researchers. Phase change materials are mainly chalcogenide compound materials. Researchers have done a lot of research on Ge-Sb-Te, Ge-Te, and Sb-Te-based phase change materials and developed some new phase change material systems. In addition, researchers have carried out in-depth research on the phase transition mechanism, but the existing atomic umbrella jump theory, multiple ring theory, resonance bond theory, octahedral structure theory, etc. have not formed a unified understanding of the phase transition mechanism. At present, phase change memory is mainly prepared by magnetron sputtering of phase change material targets, which results in fast deposition and high purity of the prepared film. In this paper, based on the development of phase change storage materials, the system of phase change materials and its phase change mechanism, the phase transition mechanism of phase change memory, the preparation and characterization methods of phase change films, the industrialization progress, and other research work are reviewed.