Tantalum Oxide Layer Research Articles

Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits

The presence of amorphous oxide layers can significantly affect the coherent time of superconducting qubits due to their high dielectric loss. Typically, the surface oxides of superconductor films exhibit lossy and unstable behavior when exposed to air. To increase the coherence time, it is essential for qubits to have stable and low dielectric loss oxides, either as barrier or passivation layers. In this study, we highlight the robust and stable nature of an amorphous tantalum oxide layer formed on α-Ta (110) film by employing chemical and structural analyses. Such kind of oxide layer forms in a self-limiting process on the surface of α-Ta (110) film in piranha solution, yielding stable thickness and steady chemical composition. Quarter-wavelength coplanar waveguide resonators are made to study the loss of this oxide. One resonator has a Qi of 3.0 × 106 in the single photon region. The Qi of most devices are higher than 2.0 × 106. Moreover, most of them are still over 1 × 106 even after exposed to air for months. Based on these findings, we propose an all-tantalum superconducting qubit utilizing such oxide as passivation layers, which possess low dielectric loss and improved stability.

Atomic Layer Deposition for Tailoring Tamm Plasmon-Polariton with Ultra-High Accuracy

In this study, we demonstrate the potential capability to control Tamm plasmon-polaritons (TPP) by applying atomic layer deposition (ALD) as a highly precise technique for plasmonic applications. Applications in plasmonics usually require tens of nanometers or less thick layers; thus, ALD is a very suitable technique with monolayer-by-monolayer growth of angstrom resolution. Spectroscopic ellipsometry and polarized reflection intensity identified the TPP resonances in the photonic band gap (PBG) formed by periodically alternating silicon oxide and tantalum oxide layers. The sub-nanometer control of the Al2O3 layer by ALD allows precise tailoring of TPP resonances within a few nanometers of spectral shift. The employing of the ALD method for the fabrication of thin layers with sub-nanometer thickness accuracy in more complex structures proves to be a versatile platform for practical applications where tunable plasmonic resonances of high quality are required.

Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

This research aims at studying aluminum tantalum oxide thin films (AlxTayOz) deposited at low temperature for dielectric applications. These ternary oxide layers are synthesized at 180 °C by physical vapor deposition (PVD), specifically the mid-frequency pulsed direct current reactive magnetron sputtering. The deposition process uses targets made of a mixture of aluminum and tantalum in various proportions. Four target compositions are studied containing 95 at.%, 90 at.%, 80 at.%, and 70 at.% of aluminum, corresponding to 5 at.%, 10 at.%, 20 at.%, and 30 at.% of tantalum, respectively. The ternary oxide thin films of AlxTayOz are compared to aluminum oxide (AlxOz) and tantalum oxide (TayOz) layers produced in the same experimental conditions. The AlxTayOz thin films are dense, uniform, and amorphous regardless of the experimental conditions used in this study. Their chemical composition changes as a function of the target composition. The oxygen flow used during deposition also affects the chemical composition of the oxide layers and the deposition rate. The oxide thin films with tantalum are deposited at higher deposition rates and contain more oxygen. Tantalum also promotes the amorphization of the oxide layers. The highest dielectric strength is measured for the thin film containing a low amount of tantalum combined with a high amount of oxygen.

Influence of passive layer fabrication method on physicochemical and antimicrobial properties of the Ta2O5 layer on NiTi alloy

The use of nickel-titanium (NiTi) alloy in implants, despite its good biocompatibility, is not entirely inert to the human body. To reduce nickel ions and improve the hemocompatibility of implants for blood contact, a thin layer of tantalum oxide (Ta2O5) was proposed. Although nitinol self-coats a thin layer of TiO2 titanium dioxide to protect against corrosion, many studies emphasized the need to enhance this protection. Therefore, in the first stage of this study, the alloy surface was prepared by four different methods, producing a passive interlayer. Then a Ta2O5 coating was applied, and the properties with and without the layer were investigated. The resulting coating was applied to the NiTi alloy in the initial state and passivated in water, and perhydrol showed a high adhesion to the substrate. However, the coating deteriorated resistance to pitting corrosion and increased surface wettability. For the initial condition and passivation in perhydrol, the coating affected the reduction of bacterial adhesion to the substrate. Surface preparation directly influenced the optimization of the deposition of this layer on implants in contact with blood. The results suggest that the properties studied were strongly correlated with the type of passive interlayer.

Mirror Surface Nanostructuring via Laser Direct Writing—Characterization and Physical Origins

AbstractThe addition of an optically absorptive layer to otherwise standard dielectric mirrors enables a set of laser direct writing nanostructuring methods that can add functionality to such mirrors while retaining their high reflectivity. A thorough characterization of this method is given in this paper, and its physical origins are investigated. In particular, these measurements show that laser direct writing of such mirrors has a reversible and a permanent component. The reversible process originates from the thermal expansion of the surface and allows a simple yet precise way to temporarily modify the shape of the mirror. Scanning electron microscope cross‐sectional images suggest that the permanent part of the nanostructuring process is due to thermally induced pore formation and enlargement in the tantalum oxide layers of the used dielectric mirror.

A method of controlling the imprint effect in hafnia ferroelectric device

Recently, hafnia-based ferroelectrics are currently being investigated as next-generation memory devices due to their excellent CMOS process compatibility and functionality. However, some of the ferroelectric devices commonly exhibit an imprint effect due to charged defects around the interfacial layer, which has negative impacts on the ferroelectric memory devices. However, it can be applied to various applications as long as the imprint field is carefully adjusted. In this work, we introduced a strategy to control the imprint field in bilayer capacitors by utilizing tantalum oxide (TaO) interfacial layers and various Zr contents in Hf0.83Zr0.17O2 (HZO) films. The TaO layer (1 nm) was inserted into the bilayer capacitors to alter the imprint field's (positive or negative) direction. Whereas to control the imprint fields, we adjusted the Zr doping content (17%–83%) in the ferroelectric HZO films (8 nm). As the Zr content increased, reduced imprint fields were observed in those bilayer capacitors. In addition, it was found that a high imprint field (+2.43 MV/cm) was observed in Hf-rich films (Hf0.83Zr0.17O2) due to the higher amount of oxygen vacancies. In addition, we examined those oxygen vacancies through x-ray photoelectron spectroscopy depth profile analysis by considering sub-oxide fractions in the tantalum, which further confirms the root cause of the imprint field variations in the bilayer capacitors. Our study will contribute to a deeper understanding of imprinted hafnia-based ferroelectrics and will provide an insight into devices that utilize the imprint effect.

Optical Properties of Valve Metals Functional Thin Films Obtained by Electrochemical Anodization on Transparent Substrates

Nanostructured aluminum, tantalum, and vanadium oxide layers on glass substrates were obtained by electrochemical anodizing in oxalic and sulfuric–oxalic electrolytes. The morphological and optical properties of the obtained structures were investigated experimentally by scanning electron microscopy and transmission spectroscopy. Obtained oxide coatings are quasi-ordered arrays of vertical (aluminum oxide/tantalum oxide, aluminum oxide/vanadium oxide, and aluminum oxide obtained in the oxalic electrolyte) or non-ordered tree-like (aluminum oxide obtained in the sulfuric–oxalic electrolyte) pores depending on the initial film metal and anodizing technology. The light transmission in the range of 750–1200 nm is up to 60% for aluminum oxide/tantalum oxide/glass (annealed) and quasi-ordered aluminum oxide/glass structures, and around 40% for aluminum oxide/tantalum oxide/glass (not annealed) and aluminum oxide/vanadium oxide. Non-ordered aluminum oxide is characterized by low transmission (no more than 8%) but has a developed surface and may be of interest for the formation of films with poor adhesion on smooth substrates, for example, photocatalytic active xerogels. The refractive indices of dispersion of the obtained layers were calculated from the transmission spectra by the envelope method. The dispersion of the refractive indices of the obtained oxide films is insignificant in a wide range of wavelengths, and the deviation from the average value is assumed to be observed near the intrinsic absorption edges of the films. The glasses with proposed semi-transparent nanostructured oxide layers are promising substrate structures for subsequent sol–gel coating layers used in photocatalytic purification systems or up-conversion modules of tandem silica solar cells with forward and reverse illumination.

Electrochemical Deposition of Hydroxyapatite on Stainless Steel Coated with Tantalum/Tantalum Nitride Using Simulated Body Fluid as an Electrolytic Medium

In the present work the electrochemical deposition of hydroxyapatite using simulated body fluid (SBF) as an electrolytic medium was carried out on Ta and Ta/TaN coatings on BIOLINE stainless steel SS316LVM (SS). The electrochemical deposition performed on each substrate for 3000 and 6000 s, at different potentials were determined from cyclic voltammetry. The best conditions found were −1.4 V for bare SS and −1.7 V for Ta/TaN coating. The structural characterization was carried out by SEM, FTIR, XRD, and contact angle measurements. The electrochemical characterization was done by electrochemical impedance (EIS), which allowed us to know the capacitive and resistive character of the substrates. The substrate (Ta/TaN)/SS at −1.7 V 6000 s presented the largest formation of a nonstoichiometric hydroxyapatite with a uniform distribution on the substrate, implying that Ta–OH is formed on the tantalum metallic surface, due to formation of the passivation layer of tantalum oxide. These groups attract Ca2+ ions and PO43− ions absorbed on the surface will form the precursors of the apatite crystals that finally transform to hydroxyapatite. The electrodeposition of HAp the double layer Ta/TaN resulted in a more uniform and denser layer than SS alone.

Vertical oxide thin-film transistor with interfacial oxidation

A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of the vertical side wall, an IGZO (In-Ga-Zn Oxide) layer was deposited, followed by the interfacial oxidation to form a thin gate insulator. Ta was used for the gate material due to the low Gibbs free energy and high dielectric constant of tantalum oxide. A 15 nm tantalum oxide layer was obtained by the interfacial oxidation of Ta at 400 °C under oxygen atmosphere. The thin gate oxide made it possible to operate the transistor under 1 V. The low operation voltage enables low power consumption, which is essential for mobile application.

Effects of Annealing on an IGZO-Metal Interface.

The interface reaction between a metal layer and a layer of amorphous indium-gallium-zinc oxide was investigated. Oxygen atoms at the interface bond to the metal atoms and form metal oxide. The reaction depends on the annealing temperature and ambient conditions. The thickness of the metal oxide at the interface increased with the annealing temperatures. The reaction relies on the Gibbs free energy for oxidation. Ta, which has low Gibbs free energy formed a 33 nm layer of tantalum oxide at an annealing temperature of 450 °C. The HR-TEM and EDX observation showed that the metal oxide thicknesses were 5, 10, and 33 nm at annealing temperatures of 350, 400, and 450 °C, respectively. The thicknesses obtained with both Ar and oxygen gas were 4, 8, and 21 nm, respectively. The lower oxide thicknesses were attributed to the lower number of oxygen vacancies in the IGZO deposited using Ar and oxygen, which was identified by XPS analysis.

Phase separation in amorphous tantalum oxide from first principles

The transition between Ta2O5 and TaO2 governs resistive switching in tantalum oxide-based resistive random access memory. Despite its importance, the Ta2O5–TaO2 transition is scarcely described in the literature, in part because the tantalum oxide layer in devices is amorphous, which makes it difficult to characterize. In this paper, we use first-principles calculations to construct the convex hull of the amorphous Ta2O5−x system for 0 ≤ x ≤ 1 and show that oxygen deficiency in tantalum oxide leads to phase-separation into Ta2O5 and TaO2. In addition, our work challenges the conventional interpretation of X-ray Photoelectron Spectroscopy (XPS) spectra of the Ta 4f orbitals. Specifically, we find that TaO2 exhibits both the Ta4+ peak associated with TaO2 and the Ta5+ peak normally associated with Ta2O5. While our simulated Ta2O5 peak originates from a narrow range of oxidation states, the TaO2 peak comes from disproportionated Ta atoms with Bader charges ranging from +3 to +1, the lowest of which are well below Ta atoms in crystalline TaO. Finally, we demonstrate that the XPS blueshift of around 1 eV observed experimentally in amorphous Ta2O5 with respect to crystalline Ta2O5 comes from both the presence of under-coordinated Ta atoms and longer Ta–O bond distances in the amorphous system. Our simulated XPS analysis shows that amorphous XPS spectra may be more complex than previously thought, and hence, caution should be applied when assigning XPS peaks to oxidation states.

Characterization of Tantalum Oxide Sol–Gel-coated AZ91 Mg Alloys

Synthesis of tantalum oxide (Ta2O5) powders via sol–gel method and Ta2O5 coating ability onto AZ91 Mg alloy were investigated, in this study. AZ91 Mg alloy was chosen as substrate because of its low density and similar mechanical properties to bone. However, some surface treatments are needed, because the Mg alloy cannot maintain its mechanical integrity in the biological environment for long periods of time. Ta2O5 is a promising coating layer for biomedical applications, because of its excellent corrosion and wear resistance and biocompatibility. In the case of Ta2O5 coatings applied on AZ91 Mg alloy, which is advantageous in many respects, it can be used in long-term applications within the body. The novel study aims for the characterization of Ta2O5-coated AZ91 Mg alloys. AZ91 Mg alloy samples were produced using a powder metallurgy method. The Ta2O5 solution was prepared by sol–gel method. The prepared solution was used for both powder producing and coating processes. For the powder producing process, the solution was aged, dried and sintered sequentially. Then, Ta2O5 powders were obtained. For the coating process, the solution was applied to the AZ91 Mg alloy samples’ surfaces using a dip coater. Coated samples were dried and sintered. The morphologies of the samples were investigated by using scanning electron microscope with energy-dispersive spectroscopy (SEM–EDS, Jeol JSM 6060 LV) and X-ray diffraction (XRD, Bruker D8 Advance). The dried Ta2O5 powders were analyzed using combined thermogravimetry–differential thermal analysis (TG–DTA, Hitachi STA 7300). The coating ability of the tantalum oxide layer on the AZ91 Mg alloy surface has been discussed. The results demonstrate that an optimum amount of deflocculating chemicals must be added to the coating in order to optimize the surface morphology.

Amorphous Iridium and Tantalum Oxide Layers Coated on Titanium Felt for Electrocatalytic Oxygen Evolution Reaction

The layer of electrocatalytic mixed oxides is known as a dimensionally stable anode (DSA) used in many industrial electrochemical processes. A layer of iridium oxide (IrO2) and tantalum oxide (Ta2O5) coated on a titanium (Ti) substrate electrode is active for oxygen evolution reaction (OER) in acidic solution. Herein, we used a porous Ti felt composed of microfibers as a conductive substrate for the IrO2-Ta2O5 electrocatalytic layer. The effect of the Ti substrates and the calcination temperature on the electrocatalytic activity for OER was investigated by cyclic voltammetry in an acidic sulfate solution. The results show that the IrO2-Ta2O5 layer on the porous Ti felt with a large surface area was more active than the layer on the conventional Ti plate. The electrocatalytic activity of IrO2-Ta2O5 layers was maximized by calcination at 350 °C and decreased by increasing the calcination temperature with the decrease of the double-layer capacitance (Cdl), which is recognized as an electrochemically active surface area (ECSA). The IrO2-Ta2O5 thin layer on the Ti felt was amorphous in the measurement of X-ray diffraction and Raman spectroscopy. The amorphous layer was confirmed to have rare cracks, larger ECSA, and higher catalytic activity for OER. The overpotential required to reach the current density of 10 mA cm–2 was only 0.27 V. The constant current was the Faradaic current for water oxidation to evolve O2.

Development of stacked porous tantalum oxide layers by anodization

Interest in nanoporous tantalum oxide (Ta2O5) has been increasing due to its high variety of applications, from protective coatings, photocatalysts to biomedical devices. Anodization is a surface modification technique, which is inexpensive, versatile, easily scalable and widely used to produce these nanostructures. In this study, Ta2O5 nanoporous surfaces were produced by anodization in HF-free electrolyte composed of ethylene glycol, water and ammonium fluoride (NH4F) with different anodization parameters (electrolyte concentration, applied potential and time). The surface morphology of each sample was investigated by scanning electron microscopy (SEM) and the sample with the more uniform porous nanostructure was characterized in terms of cross-section morphology, chemical composition and crystalline structure. The concentration of NH4F and applied potential demonstrated a significant impact on current-density-time curve, and thereafter in surface morphology. Multiple thin porous nanolayers were formed under strong electrochemical conditions (very high current density and electrolyte temperature). Through chemical analysis, it was possible to detect the presence of fluoride, which is consistent with an amorphous Ta2O5 layer with fluoride ions incorporation. Thereby, managing the electrochemical conditions is crucial to control the morphology of an anodic Ta2O5 layer.

Mechanistic Modeling for Performance Engineering of SPR-Based Fiber-Optic Sensor Employing Ta2O5 and Graphene Multilayers in Phase Interrogation Scheme

This work elucidates the numerical simulations carried out for the performance analysis of surface plasmon resonance (SPR)–based fiber-optic sensors using thin layers of tantalum (v) oxide (Ta2O5) and graphene in phase interrogation scheme. For this purpose, fiber-optic sensing probes with three distinct configurations have been used which include consecutive as well as individual layers of Ta2O5 and graphene over silver-coated unclad core of a silica optical fiber. The performance of sensing probes is studied in terms of the phase difference arising between TM and TE polarized components of the incident light as they propagate through the sensing region, besides their SPR responses towards varying refractive index of analyte layer, making use of the transfer matrix theory for stratified isotropic optical media in conjunction with geometrical optics. Theoretical investigations reveal that the probe having multi-layered arrangement of Ta2O5 and graphene possesses maximum sensitivity of propagating phase difference with magnitude 4.852 × 105 Deg/RIU at analyte refractive index of 1.33 in comparison to probes with individual Ta2O5 (3.731 × 105 Deg/RIU) and graphene (0.362 × 105 Deg/RIU) layers. Moreover, the design parameters of the probes have been numerically maneuvered with an aim of achieving an analyte refractive index of 1.33 in transmitted light spectrum to display the feasibility of proposed sensor in biochemical fields. The reported results unfold an innovative perspective to widen the application horizon of fiber-optic SPR sensors in phase interrogation scheme.

Mechanical, antibacterial, and biocompatibility mechanism of PVD grown silver-tantalum-oxide-based nanostructured thin film on stainless steel 316L for surgical applications.

Surgical site infection associated with surgical instruments has always been a factor in delaying post-operative recovery of patients. The evolution in surface modification of surgical instruments can be a potential choice to overcome the nosocomial infection mainly caused by bacterial populations such as Staphylococcus aureus, Pseudomonas aeruginosa, and Escherichia coli. A study was, therefore, conducted characterising the morphology, hydrophobicity, adhesion strength, phase, Nano-hardness, surface chemistry, antimicrobial and biocompatibility of SS 316L steel deposited with a Nano-composite layer of Silver (Ag) and Tantalum oxide (Ta2O5) using physical vapour deposition magnetron sputtering. The adhesion strength of Ag/AgTa2O5 coating on SS 316L and treated at 250-850 °C of thermal treatment was evaluated using micro-scratch. The Ag/Ag-Ta2O5-400 °C was shown a 154% improvement in adhesion strength on SS 316L when compared with as-sputtered layer or Ag/Ag-Ta2O5-250, 550, 700 and 850 °C. The FESEM, XPS, and XRD indicated the segregation of Ag on the surface of SS 316L after the crystallization. Wettability and Nano-indentation tests demonstrated an increase in hydrophobicity (77.3 ± 0.3°) and Nano-hardness (1.12 ± 0.43 GPa) when compared with as-sputtered layer, after the 400 °C of thermal treatment. The antibacterial performance on Ag/Ag-Ta2O5-400 °C indicated a significant zone of inhibition to Staphylococcus aureus (A-axis: 16.33 ± 0.58 mm; B-axis: 25.67 ± 0.58 mm, p < 0.01) and Escherichia coli (A-axis: 16.33 ± 1.15 mm; B-axis: 26.00 ± 0.00 mm, p < 0.01) when compared with SS 316L or Ag/Ag-Ta2O5-700 °C, which showed no inhibition. The biocompatibility tests on Ag/Ag-Ta2O5-400 °C demonstrated an excellent in cell attachment, F-actin protein expression and proliferation/viability of bone marrow derived mesenchymal stromal on day 14 when compared with uncoated or Ag/Ag-Ta2O5-700 °C. This study shows that the Ag segregation process, hydrophobicity, adhesion strength, crystallization, and hardness progressively improved after the annealing up to 400 °C.

Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode

The interaction of a Tamm plasmon with an exciton in an organic material in the strong coupling mode is investigated theoretically. The structure consists of five pairs of layers of silicon oxide and tantalum oxide, an organic light-emitting layer of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl, and a silver layer. It is shown that the splitting of polariton modes (Rabi splitting) with a magnitude of >400 meV can occur in such a structure, which can be accompanied by an increase in the luminescence bandwidth up to 700 meV.

Fabrication and evaluation of repairable resistive switching memory for a synaptic device

This study aimed to fabricate a synapse-mimicking device as resistive memory with a repair function. We fabricated a structure in which Ta2O5 and MnO2 were sandwiched as resistive layers between electrodes. When a pulse voltage was applied to this device, its resistance was lowered. When the lower voltage was continuously applied, the resistance value was restored. This device mimics the short-term plasticity of synapses. In addition, the tantalum oxide layer was found to exist in the suboxide state in the measured device by STEM and XPS; hence, a resistance change was considered to occur at the interface between MnO2 and Ta2O5.

Взаимодействие таммовского плазмона и экситона в органическом материале в режиме сильной связи

AbstractThe interaction of a Tamm plasmon with an exciton in an organic material in the strong coupling mode is investigated theoretically. The structure consists of five pairs of layers of silicon oxide and tantalum oxide, an organic light-emitting layer of 4,4'-bis( N -carbazolyl)-1,1'-biphenyl, and a silver layer. It is shown that the splitting of polariton modes (Rabi splitting) with a magnitude of &gt;400 meV can occur in such a structure, which can be accompanied by an increase in the luminescence bandwidth up to 700 meV.

Capacitance response characteristics of hydrogen sensor with tantalum oxide dielectric layer

Sensors with silicon substrates are limited in their application at higher temperatures than 250 °C due to the small band gap energy in silicon. In this study, a hydrogen gas sensor with metal-oxide-semiconductor (MOS) structure capable of operating at high temperatures above 300 °C is investigated. The sensor consists of a tantalum oxide layer on a SiC substrate with the large band gap energy for effectively detecting hydrogen gas. The tantalum oxide is formed by rapidly oxidizing the deposited Ta at 900 °C. To estimate response characteristics of the sensor, variations in capacitance and current-voltage characteristics after exposure to different hydrogen concentrations up to 2000 ppm were examined at temperatures ranging from room temperature to 600 °C.