Abstract
This study aimed to fabricate a synapse-mimicking device as resistive memory with a repair function. We fabricated a structure in which Ta2O5 and MnO2 were sandwiched as resistive layers between electrodes. When a pulse voltage was applied to this device, its resistance was lowered. When the lower voltage was continuously applied, the resistance value was restored. This device mimics the short-term plasticity of synapses. In addition, the tantalum oxide layer was found to exist in the suboxide state in the measured device by STEM and XPS; hence, a resistance change was considered to occur at the interface between MnO2 and Ta2O5.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
