Current Noise Analysis on Organo-Metal Halide Perovskite Resistive Switching Memory

Abstract

Abstract Body: Resistive switching memory devices are being widely studied due to their excellent characteristics such as high scalability, non-volatility, and fast operation speed. Organo-metal halide perovskite (OHP), which is solution-processable and has outstanding optical and electrical properties, is also applied to a resistive memory device. OHP resistive memory has the advantage of being able to operate with a low voltage and large ON/OFF ratio [1]. On the other hand, random distribution in operation voltage remains a challenge in memory application. This stochastic operation characteristic is due to the random formation of conducting filaments that cause resistance changes in the material. Therefore, studies on the structure of the conducting filament are important. However, observing a nano-scale structure is difficult. Moreover, there is insufficient research on how the conducting filaments are formed in OHP materials. In this presentation, the geometric shape of the conducting filaments formed in the perovskite was explored through a current noise analysis. By observing the electrical properties and current noise under different temperature conditions, we investigated how the temperature condition affects the formation of the conductive filaments [2]. Through this, more advanced understanding of the operating mechanism of the perovskite resistive memory device will be possible.