Abstract
Sensors with silicon substrates are limited in their application at higher temperatures than 250 °C due to the small band gap energy in silicon. In this study, a hydrogen gas sensor with metal-oxide-semiconductor (MOS) structure capable of operating at high temperatures above 300 °C is investigated. The sensor consists of a tantalum oxide layer on a SiC substrate with the large band gap energy for effectively detecting hydrogen gas. The tantalum oxide is formed by rapidly oxidizing the deposited Ta at 900 °C. To estimate response characteristics of the sensor, variations in capacitance and current-voltage characteristics after exposure to different hydrogen concentrations up to 2000 ppm were examined at temperatures ranging from room temperature to 600 °C.
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