Talbot Lithography Research Articles

Fractional Talbot Lithography for Predesigned Large-Area Liquid-Crystal Alignment

To address the increasing demands for cost-effective, large-area, and precisely patterned alignment of liquid crystals, a fractional Talbot lithography alignment technique was proposed. A light intensity distribution with a double spatial frequency of a photomask could be achieved based on the fractional Talbot effect, which not only enhanced the resolution of lithography but also slashed system costs with remarkable efficiency. To verify the feasibility of the alignment method, we prepared a one-dimensional polymer grating as an alignment layer. A uniform alignment over a large area was achieved thanks to the perfect periodicity and groove depth of several hundred nanometers. The anchoring energy of the alignment layer was 1.82 × 10−4 J/m2, measured using the twist balance method, which surpassed that of conventional rubbing alignment. Furthermore, to demonstrate its ability for non-uniform alignment, we prepared polymer concentric rings as an alignment layer, resulting in a liquid-crystal q-plate with q = 1 and α0 = π/2. This device, with a wide tuning range (phase retardation of ~6π @ 633 nm for 0 to 5 V), was used to generate special optical fields. The results demonstrate that this approach allows for the uniform large-area orientation of liquid-crystal molecules with superior anchoring energy and customizable patterned alignment, which has extensive application value in liquid-crystal displays, generating special optical fields and intricate liquid-crystal topological defects over a large area.

P‐107: High‐Resolution Periodic Patterning for Volume Manufacturing on +300mm Size Substrates Using Displacement Talbot Lithography

The photonic device market has a need for low‐cost, high‐resolution periodic patterning that scales with product maturity to large substrate sizes. Eulitha's DTL (Displacement Talbot Lithography) technology was limited to only a single exposure field per substrate on preexisting platforms which can fully pattern 100 and 150mm substrates. The new ‘PhableS' is Eulitha's step‐and‐repeat solution to bring all the advantages of the DTL patterning to larger substrates.The PhableS tool builds on Eulitha's patented displacement Talbot lithography technology to open the way for customers to fully scale to high volume production. This tool retains the strong technical performance; including 60nm half pitch resolution (DUV version), 140x140mm2 single shot exposure field, large depth of focus (hundreds of microns), high throughput (+40wph), non‐contact, mask‐based patterning. Automated wafer and mask handling support industry expected repeatability and defect‐free patterning.

Synthesis of Well-Ordered Functionalized Silicon Microwires Using Displacement Talbot Lithography for Photocatalysis.

Metal-assisted chemical etching (MACE) is a cheap and scalable method that is commonly used to obtain silicon nano- or microwires but lacks spatial control. Herein, we present a synthesis method for producing vertical and highly periodic silicon microwires, using displacement Talbot lithography before wet etching with MACE. The functionalized periodic silicon microwires show 65% higher PEC performance and 2.3 mA/cm2 higher net photocurrent at 0 V compared to functionalized, randomly distributed microwires obtained by conventional MACE at the same potentials.

Angle-Resolved Optical Characterization of a Plasmonic Triangular Array of Elliptical Holes in a Gold Layer

Plasmonic arrays are grating-like structures able to couple an incoming electromagnetic field into either localized or propagating surface plasmonic modes. A triangular array of elliptical holes in a gold layer were realized resorting to displacement Talbot lithography. Scanning electron microscopy was used to evaluate the geometrical features and finite time domain simulations were performed to verify the consistency of the design. The optical response was characterized by angle-resolved reflectance and transmittance measurements. The results demonstrate the good quality and uniformity of the array. Furthermore, the study on the dependence of the optical response on both the hexagonal lattice and the elliptical hole-defined symmetry properties was conducted allowing the distinction of their effects on both the localized and propagating plasmonic modes. The results indicate that the localized component of the plasmonic modes is mainly affected by the elliptical shape, while the propagating part is influenced by the hexagonal lattice symmetry.

Nanofabrication Process Scale-Up via Displacement Talbot Lithography of a Plasmonic Metasurface for Sensing Applications

The selection of an affordable method to fabricate plasmonic metasurfaces needs to guarantee complex control over both tunability and reproducibility of their spectral and morphological properties, making plasmonic metasurfaces suitable for integration into different sensing devices. Displacement Talbot lithography could be a valid solution thanks to the limited fabrication steps required, also providing the highly desired industrial scalability. Fabricated plasmonic metasurfaces are represented by a gold nanohole array on a glass substrate based on a triangular pattern. Scanning electron microscopy measurements have been recorded, showing the consistency of the surface features with the optimized design parameters. Reflectance and transmittance measurements have also been carried out to test the reliability and standardization of the metasurface’s optical response. Furthermore, these plasmonic metasurfaces have also been successfully tested for probing refractive index variations in a microfluidic system, paving the way for their use in sensitive, real-time, label-free, and multiplexing detection of bio-molecular events.

Exploring the surface-enhanced Raman scattering (SERS) activity of gold nanostructures embedded around nanogaps at wafer scale: Simulations and experiments

A unique way of converting free space light into a local electromagnetic field in small spaces is via metallic nanostructuring. In this work fabrication, experimental characterization and simulation of surface-enhanced Raman scattering (SERS) active specimens based on Au nanostructures are discussed. We used displacement Talbot lithography (DTL) to fabricate silicon nano-wedge substrates with Au nanostructures embedded around their apices. After the ion beam etching process, a nanogap is introduced between two Au nanostructures templated over nano-wedges, yielding specimens with SERS characteristics. The Au nanostructures and the nanogaps have symmetric and asymmetric configurations with respect to the wedges. With this nanofabrication method, various wafer-scale specimens were fabricated with highly controllable nanogaps with a size in the order of 6 nm for symmetric gaps and 8 nm for asymmetric gaps. SERS characteristics of these specimens were analyzed experimentally by calculating their analytical enhancement factor (AEF). According to finite-difference time-domain (FDTD) simulations, the Raman enhancement arises at the narrow gap due to plasmonic resonances, yielding a maximum AEF of 6.9 × 106. The results highlight the SERS activity of the nanostructures and ultimately comply with reliable substrates for practical applications.

Advanced optical nanolithography by enhanced transmission through bull’s eye nanostructured meta-mask

Abstract Plasmonic optical nanolithography using extraordinary optical transmission through a metallic nanohole mask has been actively applied to the high-resolution fabrication of nanostructures over a large area. Although there have been studies on improving the nanostructure fabrication performance in optical nanolithography, such as on adjustable external gap spacing, additional performance enhancement is required for practical applications and commercialization of large-area and high-resolution nanostructure array fabrication techniques. In this study, we design and apply a plasmonic bull’s eye nanostructured meta-mask to enhance the performance of optical nanolithography. Through simulation results and experimental verification, it is confirmed that advanced optical nanolithography using the bull’s eye nanostructured meta-mask has several merits compared to conventional Talbot lithography using nanoholes: (1) Optical nanolithography using the bull’s eye nanostructured meta-mask effectively fabricates nanopillar arrays even at a shorter exposure time than conventional optical lithography using nanoholes. (2) It is possible to create a large-area nanopillar array with various nanopillar diameters by exposure time control in optical nanolithography using the bull’s eye meta-mask. (3) Using water or objective immersion oil to increase the refractive index of the contact medium, light can be focused on smaller sizes, and large-area nanopillar arrays with smaller nanopillar diameters are established. With the upgradation of hardware for large-area fabrication, application of immersion media supplying techniques, and additional studies to establish complex nanostructures, optical nanolithography using the bull’s eye nanostructured meta-mask is an efficient modality to produce various nanostructure-based devices.

High aspect ratio arrays of Si nano-pillars using displacement Talbot lithography and gas-MacEtch

Structuring Si in arrays of vertical high aspect ratio pillars, ranging from nanoscale to macroscale feature dimensions, is essential for producing functional interfaces for many applications. Arrays of silicon 3D nanostructures are needed to realize photonic and phononic crystals, waveguides, metalenses, X-ray wavefront sensors, detectors. In particular, arrays of Si nanopillars are used as bio-interfaces in neural activity recording, cell culture, microfluidics, sensing and on-chip manipulation. Here, we demonstrate a strategy for realizing arrays of protruding sharp Si nanopillars, using displacement Talbot lithography combined with metal-assisted chemical etching (MacEtch) in gas phase. Such combination enables reliable and low cost pathway for fabrication of ordered nanopillars arrays on large scale. With the double exposure of a linear grating mask in orthogonal orientations and the lift-off technique, we realized a catalyst pattern of holes in a Pt thin film with a period of 1 μm and hole diameter in the range of 100–250 nm. MacEtch in gas phase by using vapor HF and oxygen from air allows to etch arrays of protruding Si nanopillars 200 nm-thick and aspect ratio in the range of 200 (pillar height/width) with an etching rate up to 1 μm/min. Gas-MacEtch has the advantage of no capillary stiction, no ion beam damage of the Si substrate, nanometric resolution and high fidelity of pattern transfer. In combination with controlled uniformity of feature size on large area, spatial frequency doubling and high resolution of Talbot lithography, the proposed method is an easy-to-scale-up processing that can support the fabrication of Si pillars arrays for many valuable applications both at micro and nano-scale.

Self-Aligned Crystallographic Multiplication of Nanoscale Silicon Wedges for High-Density Fabrication of 3D Nanodevices.

High-density arrays of silicon wedges bound by {111} planes on silicon (100) wafers have been created by combining convex corner lithography on a silicon dioxide hard mask with anisotropic, crystallographic etching in a repetitive, self-aligned multiplication procedure. A mean pitch of around 30 nm has been achieved, based on an initial pitch of ∼120 nm obtained through displacement Talbot lithography. The typical resolution of the convex corner lithography was reduced to the sub-10 nm range by employing an 8 nm silicon dioxide mask layer (measured on the {111} planes). Nanogaps of 6 nm and freestanding silicon dioxide flaps as thin as 1-2 nm can be obtained when etching the silicon at the exposed apices of the wedges. To enable the repetitive procedure, it was necessary to protect the concave corners between the wedges through "concave" corner lithography. The produced high-density arrays of wedges offer a promising template for the fabrication of large arrays of nanodevices in various domains with relevant details in the sub-10 nm range.

Distance and depth modulation of Talbot imaging via specified design of the grating structure.

For positioning Talbot encoder and Talbot lithography, etc., properties manipulation of Talbot imaging is highly expected. In this work, an investigation on the distance and depth modulation of Talbot imaging, which employs a specially designed grating structure, is presented. Compared with the current grating structure, the proposed grating structure is characterized by having the phase layers with uneven thicknesses. Such a specific structural design can cause the offset of Talbot image from its nominal position, which in turn generates the spatial distance modulation of self-imaging and imaging depth expansion. Theoretical analysis is performed to explain its operating principle, and simulations and experiments are carried out to demonstrate its effectiveness.

High Aspect Ratio Arrays of Si Nano-Pillars Using Displacement Talbot Lithography and Gas-Macetch

High Aspect Ratio Arrays of Si Nano-Pillars Using Displacement Talbot Lithography and Gas-Macetch

Talbot photolithography optimization with engineered hybrid metal-dielectric mask: High-contrast and highly-uniform Talbot stripes

Conventional projection Talbot lithography usually employs opaque (amplitude) or transparent (phase) masks for creating a periodic array of Fresnel diffraction fringes in the photosensitive substrate. For particular mask design the longitudinal periodicity of Talbot carpet can be avoided producing quasi uniform striped pattern (Talbot stripes). We propose a novel hybrid amplitude-phase mask which is engineered for obtaining extremely smooth Talbot stripes and simultaneously high lateral optical contrast and extreme spatial resolution better than a third of laser wavelength. By means of the numerical simulations, we demonstrate the robustness of produced striped diffraction patterns against mask design deviation and light incidence angle variations. The reproducibility of the Talbot stripes is reported also for 1D and 2D metal-dielectric projection masks.

Ultra‐thin GaAs solar cells with nanophotonic metal‐dielectric diffraction gratings fabricated with displacement Talbot lithography

AbstractUltra‐thin photovoltaics enable lightweight flexible form factors, suitable for emerging terrestrial applications such as electric vehicle integration. These devices also exhibit intrinsic radiation tolerance and increased specific power and so are uniquely enabling for space power applications, offering longer missions in hostile environments and reduced launch costs. In this work, a GaAs solar cell with an 80‐nm absorber is developed with short circuit current exceeding the single pass limit. Integrated light management is employed to compensate for increased photon transmission inherent to ultra‐thin absorbers, and efficiency enhancement of 68% over a planar on‐wafer equivalent is demonstrated. This is achieved using a wafer‐scale technique, displacement Talbot lithography, to fabricate a rear surface nanophotonic grating. Optical simulations definitively confirm Fabry‐Perot and waveguide mode contributions to the observed increase in absorption and also demonstrate a pathway to short circuit current of 26 mA/cm2, well in excess of the double pass limit.

Spatial periodicities inside the Talbot effect: understanding, control and applications for lithography.

Displacement Talbot Lithography (DTL) is a simple patterning technique for creating periodic sub-micron features on wafer areas up to 200 mm diameter for applications in, for example, plasmonic, photonic crystals, and metamaterials. It exploits the diffraction and interference generally avoided in classical lithography. The Talbot effect, on which DTL is based, is the periodic spatial repetition of a periodic mask illuminated by coherent light. The modelling of this phenomenon is essential to fully understand and predict the interference pattern obtained; for mask periods greater than twice the wavelength, new spatial periodicities are generally introduced that are smaller than the Talbot length. This study reports simulations of multiple 1D masks to explain the influence of these smaller spatial periodicities on the Talbot effect. By changing the mask configuration, one can tailor the spatial periodicity contributions and thus, control the feature size, uniformity, and contrast for Talbot-effect-based lithography.

Fabrication of high aspect ratio and tilted nanostructures using extreme ultraviolet and soft x-ray interference lithography

We demonstrate the fabrication of metal and dielectric nanostructures using interference lithography with extreme ultraviolet (EUV) and soft x-ray synchrotron radiation down to a 2.5 nm wavelength. These specific wavelengths are chosen because of the industrial relevance for EUV lithography and because they are in the vicinity of the oxygen absorption edge of the high-resolution hydrogen silsesquioxane photoresist, allowing for the exposure of thick layers. We investigate the requirements to fabricate such structures and demonstrate that tall metal nanostructures with aspect ratios up to 7 could be achieved by EUV interference lithography and subsequent electroplating. We use the unique depth-of-focus-free property of interference and achromatic Talbot lithography to fabricate uniformly tilted dielectric nanostructures.

Optimization of displacement Talbot lithography for fabrication of uniform high aspect ratio gratings

Displacement Talbot lithography can rapidly pattern periodic nanostructures with high depth of focus over large area. Imperfections in the phase mask profile and the stage movement inaccuracies during the exposure cause linewidth variation in every second line of binary gratings. While this beating is barely visible in patterned photoresist, it leads to substantial depth variation when transferred into high aspect ratio silicon structures, because of micro-loading in deep reactive ion etching. A proper scan range compensated the defect, and a beating-free grating with pitch size of 1 μm and aspect ratio of 54:1 is demonstrated.

A wafer-scale fabrication method for three-dimensional plasmonic hollow nanopillars.

Access to nanofabrication strategies for crafting three-dimensional plasmonic structures is limited. In this work, a fabrication strategy to produce 3D plasmonic hollow nanopillars (HNPs) using Talbot lithography and I-line photolithography is introduced. This method is named subtractive hybrid lithography (SHL), and permits intermixed usage of nano-and-macroscale patterns. Sputter-redeposition of gold (Au) on the SHL resist pattern yields large areas of dense periodic Au-HNPs. These Au-HNPs are arranged in a square unit cell with a 250 nm pitch. The carefully controlled fabrication process resulted in Au-HNPs with nanoscale dimensions over the Au-HNP dimensions such as an 80 ± 2 nm thick solid base with a 133 ± 4 nm diameter, and a 170 ± 10 nm high nano-rim with a 14 ± 3 nm sidewall rim-thickness. The plasmonic optical response is assessed with FDTD-modeling and reveals that the highest field enhancement is at the top of the hollow nanopillar rim. The modeled field enhancement factor (EF) is compared to the experimental analytical field enhancement factor, which shows to pair up with ca. 103 < EF < 104 and ca. 103 < EF < 105 for excitation wavelengths of 633 and 785 nm. From a broader perspective, our results can stimulate the use of Au-HNPs in the fields of plasmonic sensors and spectroscopy.

Fabrication of three-dimensional high-aspect-ratio structures by oblique-incidence Talbot lithography.

Developing a suitable production method for three-dimensional periodic nanostructures with high aspect ratios is a subject of growing interest. For mass production, Talbot lithography offers many advantages. However, one disadvantage is that the minimum period of the light intensity distribution is limited by the period of the diffraction grating used. To enhance the aspect ratio of fabricated nanostructures, in the present study we focus on multiple wave interference between diffracted waves created using the Talbot effect. We propose a unique exposure method to generate multiple wave interference between adjacent diffraction orders by controlling the angle of incidence of an ultraviolet (UV) light source. Using finite-difference time-domain simulations, we obtain fringe patterns with a sub-wavelength period using a one-dimensional periodic grating mask. Moreover, we demonstrate the practical application of this approach by using UV lithography to fabricate sub-wavelength periodic photopolymer-based structures with an aspect ratio of 30 in millimeter-scale areas, indicating its suitability for mass production.

High-birefringence waveguide Bragg gratings fabricated in a silica-on-silicon platform with displacement Talbot lithography

High-birefringence waveguide Bragg gratings for the C-band are fabricated in the Silica-on-Silicon platform with Displacement Talbot Lithography (DTL). Transmission and reflection spectrums of the Bragg wavelength splitting were measured and calculated. The birefringence here is up to 7.919×10−4 to 1.670×10−3, much higher than existing devices via other platforms. We illustrate the principle and advantage of DTL though theoretical analysis and numerical simulation. The birefringence of waveguide Bragg gratings here are customized with their device configuration (i.e., waveguide width and grating etched depth), enabling an effective method to construct scalable Silica-on-Silicon devices for highly linear-polarized external-cavity semiconductor lasers.

Wafer-scale nanofabrication of sub-100 nm arrays by deep-UV displacement Talbot lithography

In this manuscript, we demonstrate the potential of replacing the standard bottom anti-reflective coating (BARC) with a polymethylglutarimide (PMGI) layer for wafer-scale nanofabrication by means of deep-UV displacement talbot lithography (DTL). PMGI is functioning as a developable non-UV sensitive bottom anti-reflective coating (DBARC). After introducing the fabrication process using a standard BARC-based coating and the novel PMGI-based one, the DTL nanopatterning capabilities for both coatings are compared by means of the fabrication of etched nanoholes in a dielectric layer and metal nanodots made by lift-off. Improvement of DTL capabilities are attributed to a reduction of process complexity by avoiding the use of O2 plasma etching of the BARC layer. We show the capacity of this approach to produce nanoholes or nanodots with diameters ranging from 95 to 200 nm at a wafer-scale using only one mask and a proper exposing dose. The minimum diameter of the nanoholes is reduced from 118 to 95 nm when using the PMGI-based coating instead of the BARC-based one. The possibilities opened by the PMGI-based coating are illustrated by the successful fabrication of an array of nanoholes with sub-100 nm diameter for GaAs nanowire growth on a 2″ GaAs wafer, a 2″ nanoimprint lithography (NIL) master stamp, and an array of Au nanodots made by lift-off on a 4″ silica wafer. Therefore, DTL possess the potential for wafer-scale manufacturing of nano-engineered materials.