Ta Ions Research Articles

Immunomodulatory hydrogel patches loaded with curcumin and tannic acid assembled nanoparticles for radiation dermatitis repair and radioprotection

Radiation dermatitis, as a major side effect of radiotherapy, is a form of skin injury linked to the production of reactive oxygen species (ROS). Development of functional patches with excellent ROS scavenging ability and biosafety is crucial for radioactive dermatitis repair. Herein, we present a nanohybrid hydrogel patch composed with natural-derived substances. The patch possesses dual functionalities of chemically scavenging ROS and physically absorbing radiation, thereby alleviating radiation damage. Curcumin@tannic acid (Cur@TA) nanoparticles are synthesized through spontaneous coordination of TA and iron ions (Fe3+), enabling the encapsulation of Cur. The nanoparticles are then loaded into gelatin methacryloyl (GelMA) hydrogel patches, which endow the hydrogel with tissue adhesion as well as photothermal properties. Simultaneously, the patch exhibits powerful ROS scavenging capability and promotes M2 polarization of macrophages. Additionally, the high-water content of the GelMA hydrogel enables physical absorption of low-energy X-rays, providing radiation shielding. Based on these characteristics, we have demonstrated the augmented therapeutic efficacy of the hydrogel patch loaded with Cur@TA nanoparticles in the mouse model of radiation dermatitis. Our findings introduce a novel therapeutic approach for radiation protection and treatment, with potential clinical applications.

The influence of CeO2 on the oxidation resistance of TaC/Ni composites

The in-situ TaC/Ni composites with different CeO2 content (0 wt%, 1 wt%, 2 wt%) were prepared by reactive sintering method, and their oxidation behavior in air at 1073 K was analyzed by static cyclic oxidation method to investigate the influence mechanism of CeO2 on the oxidation resistance of composites. The results show that the CeO2 particles are distributed around the TaC particles in the Ni matrix, and the oxidation behavior of composites with different CeO2 content conforms to the linear kinetic law. The oxide film is mainly composed of NiTa2O6 and a small amount of NiO. The generation reactions of Ta2O5 and NiTa2O6 induce a high expansion and compressive stress in oxide scale, leading to the formation of nonprotective oxide film with pores and cracks on the surface. As the addition of CeO2 increases from 0 wt% to 2 wt%, the thickness of oxide scale on composites obviously reduces from 505 μm to 122 μm, and the Ni and Ta oxides content decreases, leading to the reduction of pores and cracks in oxide scale. The Ce ion generated from the dissolution of CeO2 particles mainly distributes in the Ta oxides during the oxidation process, which hinders the outward diffusion of Ni and Ta ions, resulted in the improved oxidation resistance of TaC/Ni composites.

Structural, optical, photocatalytic and thermal behaviour of (Nb, Ta) co-doped WO3 nanoparticles and its application in photocatalytic degradation of MG and RhB dyes

In this communication, eco-friendly, cost effective and facile hydrothermal route was adopted to synthesize pure WO3, Nb-doped WO3 and (Nb, Ta) co-doped WO3 nanoparticles. Phase, lattice constants, crystallite size and crystallinity have been evaluated through X-ray diffraction. The insertion of Nb and Ta ions into WO3 nanoparticles was confirmed by XPS, FTIR and EDS studies. HRTEM and SAED micrographs exhibited highly nanocrystalline nature of samples. UV–visible studies was carried out to analyse nature of band gap, band gap energy, extinction coefficient, refractive index, Urbach energy and optical conductivity of prepared samples. Optical band gap was narrowed from 2.94 to 2.49 eV and Urbach energy was extended from 0.08 to 0.35 eV through co-doping of (Nb, Ta) ions into WO3 NPs. Reduction in PL intensity revealed that electron-hole pair recombination rate was decreased with co-doping of (Nb, Ta) ions. The photo-degradation efficiency of (Nb 5 %, Ta 5 %) co-doped WO3 nanophotocatalysts was 93.12 % against MG and 90.11 % against RhB dyes. The rate constant was found to be increased from 0.0107 to 0.0203 min−1 for MG and 0.0086 to 0.0174 min−1 for RhB. Thermal results exhibited the weight loss in three phase degradation processes, and thermal stability. The results showed that (Nb 5 %, Ta 5 %) co-doped WO3 NPs is a potential candidate for practical applications in environmental remediation (organic dyes degradation).

Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes

Abstract A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky (JBS) diodes under heavy ion irradiation. We propose and verify that the generation of stacking faults (SFs) induced by the recombination of massive electron--hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results. The irradiation experiment was carried out based on Ta ions with high linear energy transfer (LET) of 90.5 MeV/(mg/cm2). It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20% of the rated reverse voltage. Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes. We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation. Finally, three-dimensional (3D) TCAD simulation was employed to evaluate the excessive electron–hole pairs (EHPs) concentration excited by heavy ion irradiation. It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate. The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.

Research on single event effects and hardening design of LDMOS transistors

In this paper, an N-type Lateral Diffused Metal Oxide Semiconductor (LDMOS) device was designed using a heavily doped P+ well and drain N-type buffer layer structure in the BCD process. The hardened mechanism of heavily doped P+ well and drain N-type buffer layer structures was simulated and analyzed using a TCAD device simulator. To verify the anti-SEE performance of the LDMOS, the irradiation test was conducted using Ta ion (LET = 79.2 MeV·cm−2 mg−1). The results show that increasing P+ well doping concentration and using buffer layer structure can increase the single event burnout (SEB) voltage of high-voltage LDMOS devices. SEB did not occur within the full operation voltage range.

Production study of Fr, Ra and Ac radioactive ion beams at ISOLDE, CERN

The presented paper discusses the production of radioactive ion beams of francium, radium, and actinium from thick uranium carbide (UCx\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_{x}$$\\end{document}) targets at ISOLDE, CERN. This study focuses on the release curves and extractable yields of francium, radium and actinium isotopes. The ion source temperature was varied in order to study the relative contributions of surface and laser ionization to the production of the actinium ion beams. The experimental results are presented in the form of release parameters. Representative extractable yields per μ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\mu$$\\end{document}C are presented for 222-231\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{222-231}$$\\end{document}Ac, several Ra and Fr isotopes in the mass ranges 214≤\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\le$$\\end{document}A≤\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\le$$\\end{document}233 and 205≤\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\le$$\\end{document}A≤\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\le$$\\end{document}231 respectively. The release efficiency for several isotopes of each of the studied elements was calculated by comparing their yields to the estimated in-target production rates modeled by CERN-FLUKA. The maximal extraction efficiency of actinium was calculated to be 2.1(6)% for a combination of surface ionization using a Ta ion source and resonant laser ionization using the two-step 438.58 nm, and 424.69 nm scheme.

Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions

The irradiation influences the properties of GaN. We studied the irradiation of n-type, p-type, and i-type GaN with 2.896 GeV Ta ions, with experimental irradiation fluence of 3 × 108, 3 × 109, and 2 × 1010 cm−2, respectively. Low fluence ion irradiation of GaN enhances the luminescence performance of the samples and releases stress between GaN and the sapphire substrate. We demonstrate by characterizing GaN that this is due to the displacement of Ga or N atoms repairing the defects caused by the entry of irradiated ions, thus enhancing the performance of GaN. This provides a reference for low fluence irradiation of GaN.

Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

In this work, the single-event burnout (SEB) mechanism of p-GaN gate AlGaN/GaN HEMTs has been studied systematically. The irradiation experiment was carried out based on Ta ions with high linear energy transfer of 75.4 MeV/(mg/cm2), a standard criterion for commercial space applications. It is clearly observed that both the drain current and gate current increase during the irradiation. With the increasing drain bias, the device burns out eventually. Technology computer-aided design simulation was used to explore the possible burnout mechanism. The local high electric field peak induced by the electron and hole redistribution was proposed to explain the permanent damage. When heavy ions impact the device, electron–hole pairs are formed. With the aid of a horizontal electric field across the channel, electrons and holes move toward the drain and gate, respectively. The accumulation of electrons and holes around the drain edge and gate edge induces the local high electric field, which is even higher than the intrinsic breakdown electric field of GaN and AlGaN. The scanning electron microscope results verified the proposed SEB mechanism. This research offers significant theoretical and experimental insights for evaluating the reliability of GaN power devices against high-energy single-event burnout in aerospace applications.

Swift heavy ion irradiation-driven energy band engineering and its profound influence on the photoresponse of β-Ga2O3 ultraviolet photodetectors

Swift heavy Ta ions with an ultra-high energy of 2896 MeV are utilized for irradiation of β-Ga2O3 photodetectors. Noteworthy variations in device performance under different wavelengths are observed. Under 254 nm light illumination, the photocurrent of the devices exhibit degradation at low ion fluences but gradually recover and even surpass the performance of non-irradiated devices at the irradiation fluence of 1 × 1010 cm−2. Conversely, under 365 nm light illumination, photocurrent increases at low fluence but slightly decreases at the same high fluence of 1 × 1010 cm−2. Cathodoluminescence spectra and first-principles calculations elucidate the mechanism underlying the evolution of device performance with irradiation fluence. At low irradiation fluence, the introduction of point defects such as oxygen vacancies and gallium vacancies leads to an expansion of the bandgap, resulting in a decline in photocurrent under 254 nm light illumination. Additionally, deep defect levels are generated by these point defects, promoting an enhancement of photocurrent under 365 nm light illumination. Higher fluences transform these point defects into complex defects such as Ga–O pair vacancies, resulting in a reduction in the bandgap. Consequently, an increase in photocurrent is observed for devices illuminated with 254 nm light. However, at high irradiation fluences, charge recombination induced by the presence of deep defect levels becomes more significant, leading to a decrease in photocurrent when exposed to 365 nm light. No matter what, at 1 × 1010 cm−2 fluence, β-Ga2O3 photodetectors still maintain excellent performance, implying their strong radiation resistance and immense potential for application in space environments.

Epitaxial Tantalum‐Doped β‐Ga2O3 Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition

Epitaxial thin films of tantalum‐doped β‐Ga2O3 (Ta‐Ga2O3) are grown on MgO (001) substrates to study the effect of Ta doping on the electrical properties of β‐Ga2O3 films. X‐Ray diffraction (XRD) measurements show that the films with different Ta doping concentrations are (00l)‐oriented single‐crystalline β‐Ga2O3 without impurity phases. The incorporation of the Ta element modifies the electrical properties of Ta‐Ga2O3 films significantly. At a very low doping ratio of 0.05 mol%, the Ta‐Ga2O3 film showed a minimum resistivity of 2.32 Ω cm and a carrier concentration of 2.48 × 1017 cm−3. The corresponding activation energy of Ta element in the film is 16.8 meV, suggesting that the Ta element is a promising shallow donor dopant. The X‐ray photoelectron spectroscopy (XPS) analysis confirms that the Fermi level of the Ga2O3 films shifts toward the conduction band minimum after the introduction of Ta ions. These results indicate that the transition metal element Ta could be an effective n‐type dopant for modulating the carrier transport behavior of β‐Ga2O3 films.

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Tunable formation of gold nanoparticles on polymer by keV ion beam irradiation

The formation of nanostructures from a thin Au film deposited on a polystyrene and polymethylmethacrylate substrate under keV monatomic P, Ta and molecular PF4 ion irradiation is studied. The formation of nanoparticles on both kinds of polymers is shown. Heavy Ta ions are most effective in altering the Au layer, whereas its transformation by light P or molecular PF4 ions is less pronounced. Irradiation with PF4 ions has a much smaller effect on the PS and PMMA substrate bulk compared to that with monatomic P ions. The crucial role of collision cascade density in the process of thin metallic film coagulation on polymer substrate is revealed. During ion bombardment, transmitted IR light intensity increases proportionally to the area covered by the metal film, which makes it possible to use FTIR as a rapid technique to estimate the state of the nanoparticle formation process.

Softened Water and Steam Boiler Water Condensate Quality used in the Milk Production Line of a Private Dairy Unit Located in Bechar Province (South-West of Algeria): Physicochemical and Bacteriological Analysis

Background: This study aimed at assessing the physicochemical and bacteriological parameters of the water at the softener outlet and the steam boiler water condensate of a dairy unit located in Bechar province (South-West of Algeria). Methods: Some physicochemical and bacteriological parameters were analyzed based on standard methods given by the American Public Health Association (APHA). Result: The obtained results showed that the parameters: pH, EC, salinity, TA, TAC, sulfate, nitrate, and fluoride ions of most analyzed water samples at the softener outlet (SW) were in agreement with national regulations. However, the steam boiler water condensate samples (BW) were out of specification except for TA, TAC, nitrate, and fluoride ions. The SW and BW samples were qualified as very hard exceeding the standard set at 15°f and 10,5 to 11,5°f, respectively, with high salinity and TDS values. The bacteriological analysis showed that most of the steam boiler water condensate samples complied with national regulations with the absence of fecal coliforms, knowing that the BW5 and BW8 samples were contaminated with spores of sulfite-reducing Clostridia at a load of 3 and 1 spore/50 mL, respectively. However, an average of 6/10 (i.e. 60%) of the softened water samples were contaminated with the opportunistic species ‘Pseudomonas aeruginosa’, while the SW5, SW8 and SW10 samples were contaminated with spores of sulfite-reducing Clostridia (1 to 11 spores/50 mL). All samples were free from Salmonella spp. A high TH of the water at the softener outlet reveals a malfunction of the external treatment (softening). On the one hand, boiler scaling that may occur can reduce the steam flow (low efficiency of the heat treatment), which contributes to poor pasteurization of the milk, especially in the presence of bacterial contaminants, and on the other hand, increase the energy expenditure.

Tantalum infiltration in partially stabilized zirconia for biomedical application

This study aims to improve the low-temperature degradation (LTD) performance of 3% mol yttria tetrahedral zirconia polycrystal (3Y-TZP) ceramic. Tantalum ion infiltration fluid was prepared by dispersing Tantalum nanoparticles (Ta-NPs) into the absolute ethyl alcohol. A 3Y-TZP-Ta (3Y-Ta) structure was produced via infiltrating Ta fluid in a pre-sintered porous 3Y-TZP substrate through capillary forces. The microstructure of 3Y-Ta ceramic samples was observed by scanning electron microscope (SEM), X-ray Photoelectron Spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), X-Ray Diffraction (XRD) and X-Ray fluorescence (XRF) spectrometry. SEM results showed the formation of 3Y-Ta structure. A phase transformation from tetragonal (t) to monoclinic (m) was not observed in as-infiltrated 3Y-TZP specimens. Ta ions segregated at the grain boundaries. A 3Y-Ta structure was made by the Ta fluid infiltration/densification method. 3Y-Ta structure may decrease the susceptibility of 3Y-TZP to LTD. Clinical significance: This study provides theoretical guidance for to reasonable methods to decrease the susceptibility of 3Y-TZP to LTD for biomedical applications.

Cr and Mg codoped bismuth tantalate pyrochlores: Thermal expansion and stability, crystal structure, electrical and optical properties, NEXAFS and XPS study

A series of Bi2Cr1-xMgxTa2O9+Δ solid solutions with the pyrochlore structure was synthesized by the method of solid-phase synthesis. Structural parameters of the disordered pyrochlore were determined by the Rietveld method (space group Fd-3m:2 (No. 227), Z = 8). As the magnesium content increases, the unit cell parameter rises continuously from 10.4596 ± 0.0001 Å (x = 0.3) to 10.5463 ± 0.0001 (x = 1.0) according to the Vegard rule. The grain size varies in the range of 0.5–2 μm, regardless of the magnesium/chromium(III) ratio. Chromium ions increase the range of thermal stability of ceramics up to 1110 °C.The thermal expansion coefficient in the range of 30–1110 °C increases continuously from 4.1 to 8.6 × 10−6 °C−1 (for x = 0.5). The oxidation states of ions were determined by X-ray spectroscopy (XPS and NEXAFS). It was shown that bismuth and magnesium ions in the pyrochlore are in the Bi(+3), Mg(+2) charge states, and for chromium the states Cr(+3), Cr(+6) are most probable. Based on the presence of an energy shift in the region of Ta4f, Ta5p and Ta5d absorption edges by ΔЕ∼0.7 eV and ∼1 eV, respectively, it was concluded that the oxidation degree of the Ta(+5-δ) ion decreased. The band gap for the samples in the case of direct allowed electronic transitions is in the range of 2.14–2.29 eV. At RT and in the frequency range (102–106 Hz), the dielectric permittivity of the samples is practically constant and it decreases with increasing amount of chromium from 20 (x = 0.7) to 16 (x = 0.3) at 1 MHz.In the high-frequency region (≥105 Hz), the dielectric loss tangent for all samples is independent on frequency and takes low values of ∼0.004 (1 MHz). The activation energy of conductivity for the samples varies in the range of 1.39–1.48 eV. The ability to adsorb water was found for chromium pyrochlores.

Improvement of piezoelectric properties of Bi4Ti3O12 ceramics by Mn/Ta co-doping and direct reaction sintering

Bi4Ti3-x (Mn1/3Ta2/3)xO12 piezoelectric ceramics were prepared by conventional sintering and direct-reaction sintering in this study. The effect of B-site Mn/Ta co-substitution and sintering method on the microstructure and electrical properties of Bi4Ti3-x (Mn1/3Ta2/3)xO12 piezoelectric ceramics was systematically investigated. The experimental results show that the combination of high-valent Ta and low-valent Mn ions replacing Ti4+ ions reduce the concentration of oxide vacancy defects in BITMT ceramics. The direct-reaction sintering is a simpler preparation method and the prepared samples have more uniform grain distribution and higher density. The resistivity of the direct reaction sintered sample with x = 0.05 at 500 °C is 7.19 × 105 Ωcm, the residual polarization is 8.1 μC/cm2, and the temperature stability of the piezoelectric constant is good. Therefore, the present study suggests that the piezoelectric properties of Mn and Ta co-doping of BIT ceramics could be greatly enhanced via the direct-reaction sintering, which provides a promising alternative to the conventionally sintered for a more cost-effective preparation for BIT ceramics.

Investigation of Antimony ions doping on crystal structure and enhanced microwave dielectric performance of MgTa2O6 ceramics

Dielectric ceramics are promising in large-scale commercial millimeter-wave communication technology, such as 5G and the upcoming 6G, thanks to their excellent frequency selection characteristics and environmental stability. In this work, various contents of SbO bonds were introduced into the MgTa2O6 lattice using the solid-phase reaction method to investigate the effects on the lattice and microwave dielectric properties. XRD confirms that Sb ions successfully occupy Ta sites in the lattice and cause lattice shrinkage and crystallinity deterioration, which leads to a slight decrease in the quality factor. Furthermore, DFT calculations reveal that the doping leads to electron-biased aggregation toward O atoms, causing higher SbO ionicity, but also attenuates the degree of ionization of Ta and Mg ions, which makes the dielectric constant of the doped samples vary non-monotonically with gradient doping. Satisfactorily, Sb doping substantially enhanced the thermal stability of the ceramics, with TCF values reduced from 36 × 10−6 °C-1 to 15 × 10−6 °C-1.

Stepwise photoassisted decomposition of carbohydrates to H2

Stepwise photoassisted decomposition of carbohydrates to H2

Scalable synthesis of Ta1.1O1.05/biomass carbon composite with multiple structure engineering by boron-doped graphene quantum dot for high-energy supercapacitor

Low intrinsic conductivity and insufficient electroactive sites hinder wide applications of tantalum oxide in supercapacitors. The study reports scalable synthesis of Ta1.1O1.05/biomass carbon (C) composite with multiple structure engineering by boron-doped graphene quantum dot (B-GQD). B-GQD was orderly coordinated with Ta(V) ion to produce Ta-B-GQD complex, sucked into cotton and dried. Followed by annealing at 900 °C in N2 to obtain B-GQD-Ta1.1O1.05/C. Experimental result and theoretical calculation demonstrate that the introduction of B-GQD results in formation of Ta1.1O1.05 nanorods with low valence, small size, highly exposed high-index crystal faces, oxygen vacancies and PN junction. The structure dramatically improves the intrinsic conductivity, electroactive sites and voltage window range. The B-GQD-Ta1.1O1.05/C electrode exhibits high capacitance of 528.3 F g−1 at 0.5 A/g, which is more than that of Ta1.1O1.05 electrode (130.9 F g−1). The flexible symmetrical supercapacitor provides ultrahigh capacitance of 374.1 F g−1 at 1 A/g, high-rate capacity of 207.8 F g−1 at 50 A/g, capacity retention of 98.7 % after 10,000 cycles at 10 A/g and energy density of 113.9 W h Kg−1 at 521.2 W kg−1. The supercapacitor has been successfully applied in the self-powered attitude sensor driven via friction nanogenerator to monitor human walking posture.

Heavy-ion and pulsed laser induced single-event double transients in nanometer inverter chain

Single-event double transients (SEDT) measurement in a designed 65-nm bulk CMOS inverter chain is performed under heavy-ion irradiation and pulsed laser irradiation. An SEDT event is observed under Ta ions irradiation, and it is found to result from the charge sharing between electrically connected inverters by TCAD simulation. Laser experimental results show that SEDT generation increases with the laser pulse energy as well as the supply voltage of the inverter chain. The pulse width distributions of SEDT for the laser irradiations of different rows demonstrate that SEDT events generated far from the chain output are modified by the pulse broadening during propagation: the first and second single-event transients are broadened, but the temporal differences are shrunk. The difference of SEDT cross-sections between the laser irradiations of different rows suggests that SEDT may be mitigated by controlling propagation.