Surface Preparation Methods Research Articles

Effect of Surface Preparation on the Microstructure, Adhesion, and Tensile Properties of Cold-Sprayed Aluminum Coatings on AA2024 Substrates

Commercially pure aluminum coatings (CP-Al) were applied to AA 2024-T351 substrates utilizing the cold spray process using different surface preparation methods and carrier gases; the resulting microstructures and mechanical properties were investigated. Substrate preparation methods were examined to understand the effect of substrate roughness on coating properties, to minimize embedded grit, and to identify the surface preparation method that yielded the best combination of coating properties. Three substrate roughing preparations, glass bead, SiC grit, and alumina grit blast, were examined while utilizing both helium and nitrogen as carrier gases in the cold spray process. Coatings that were oxide free, possessing densities greater than 99% were achieved, with the mean coating porosity ranging 0.1-0.5%. The highest mean adhesion strength was 42 MPa for the nitrogen gas and 20 MPa for the helium gas, both using glass bead surface preparation. For the nitrogen process gas samples, the surface preparation methods that produced high pull strengths correlated to bend test specimens that showed no signs of cracking on surfaces or edges. The overall best combination of mechanical property results was achieved with coatings prepared by glass bead surface roughening using nitrogen as a carrier gas.

Influence of surface preparation methods on moisture-related performance of structural hardwood–adhesive bonds

The aim of this study was to investigate the influence of three surfacing methods (peripheral planing, sanding and face milling) on the moisture-related performance of bonded ash assemblies (Fraxinus excelsior L.). The different surfaces were tested in combination with four adhesives: phenol-resorcinol-formaldehyde (PRF), melamine-urea-formaldehyde (MUF), polyurethane (PUR) and emulsion polymer isocyanate (EPI). For evaluation, the surface roughness was measured and surfaces and bonds were examined by means of scanning electron microscopy (SEM) and transmitted light microscopy, respectively. To analyze bond performance, tensile shear tests were carried out as per EN 302-1 and the resistance to delamination was determined according to EN 302-2. Microscopy and roughness measurements showed significant differences between the bonding surfaces, notably with regard to cell damage and the level of fibrillation. The surface texture had significant impact on shear and delamination results. While shear tests showed good bond performance when tested in dry condition, moisture treatment revealed differences between surfaces, in particular with regard to wood failure. Based on shear results, the most appropriate surfacing method to produce moisture-resistant bonds appeared to be face milling together with PRF. Delamination results varied strongly with the surfacing method and adhesive types. PRF and MUF showed highest resistance to delamination with sanded surfaces, possibly because damaged cells helped to dissipate strain. PUR and EPI provided lower moisture-related durability. For these adhesives, best results were obtained with face milled surfaces, probably because of a more homogenous strain dissipation in the glueline caused by fibrillation.

Micromorphology Characterization of SiO2-Based Composite Thin Films with Immobilized Terbium(III) Complex

The aim of this study was to investigate by atomic force microscopy and multifractal analysis the three-dimensional (3-D) of surface micromorphology of the complex of Tb(III) with the biscoumarin derivative 3,3′-[(4-hydroxyphenyl)methyl)]bis-(4-hydroxy-2H-1-benzopyran-2-one), Tb(C25H15O7)3 · 5H2O immobilized in transparent SiO2-based films by a simple casting technique. The 3-D surfaces contain irregularities of various orders spread on the surface due to the intrinsic method of surface preparation. We found that the micromorphology of all analyzed samples has multifractal characteristics. The generalized dimension D q and the singularity spectrum f(α) provided quantitative values that describe the degree of heterogeneity in the 3-D surface geometry at nanometer scale. The results showed that the larger the spectrum width Δα (Δα = α max − α min ) of the multifractal spectra f(α), the more nonuniform is the surface micromorphology. These results demonstrate that multifractal analysis is a more precise and reliable tool for quantitative characterization of 3-D surface micromorphology.

Experimental Fatigue Study of Composite Patch Repaired Steel Plates with Cracks

Cracks are among the most commonly encountered defects in metallic structures operating at sea. Composite patch repairing is a repair method which is gaining popularity as it counters most of the problems faced by conventional renewal repairs. Extensive studies can be found in the literature addressing the efficiency of this novel repair method using techniques which meet higher performance and monitoring standards than these commonly found in naval applications. In this work the efficiency of practices widely used in the ship repair industry for the implementation of composite patch repairing is addressed. To this end, steel plates repaired with composite patches were tested under fatigue loading. The composite patches consisted of carbon fibers in epoxy matrix and were directly laminated to the steel surface using the vacuum infusion method. Two different surface preparation methods, namely grit-blasting and mechanical treatment with the use of a needle gun were studied. In addition, in order to account for the harsh environmental conditions during the operating life of the structure and to study its effect on the repair, two different aging scenarios were considered. Non-destructive evaluation of the patches was performed so as to assess the quality of the repair, and the evolution of debonding during testing.

Novel Surface Preparation Methods for Covalent and Conductive Bonded Interfaces Fabrication

A novel wafer bonding technology, designed to enable covalent and conductive wafer bonding processes at low temperature was developed. Covalent and conductive bonding processes at low temperatures and even room temperature may become key technology in order to fabricate high performance junctions in compound semiconductor integration applications. This work is presenting the first process qualification results obtained for Si wafers. Apart from equipment characterization data, e.g. particle contamination, data presented here include HR-TEM, EDXS and bond strength analysis achieved for Si-Si hydrophobic wafer bonding.

Dentin-smear remains at self-etch adhesive interface

ObjectiveThe bonding potential of ‘mild’ self-etch adhesives may be compromised due to smear interference, as they may not dissolve/penetrate the smear layer effectively due to their relatively low acidity. We observed that the thickness of the dentin smear layer differed depending on the surface-preparation methodology used. MethodsThe interaction of an (ultra-)mild self-etch adhesive (Clearfil S3 Bond, Kuraray Noritake) with human dentin, prepared either using a medium-grit diamond bur (‘thick’, clinically relevant smear layer) or 600-grit SiC-paper (‘thin’ smear layer), or just fractured (smear-free), was evaluated using high-resolution transmission electron microscopy (TEM). Non-demineralized/demineralized 30–100nm interfacial cross-sections were prepared following common TEM-specimen processing and diamond-knife ultra-microtomy. ResultsThe adhesive did not dissolve the bur-cut, nor the SiC-ground smear layer, but impregnated it. Within this ‘resin-smear complex’, hydroxyapatite was abundantly present. At fractured dentin, this complex was not present, while the actual layer of interaction of the adhesive was limited to about 100nm. Non-demineralized ‘ultra-thin’ (30–50nm) sections confirmed the interfacial ultra-structure to differ for the three surface-preparation methods. An electron dense band was consistently disclosed at the adhesive interface, most likely representing the documented chemical interaction of the functional monomer 10-MDP with Ca. SignificanceThe dentin surface-preparation method significantly affects the nature of the smear layer and the interaction with the ultra-mild self-etch adhesive.

Novel Surface Preparation Methods for Covalent and Conductive Bonded Interfaces Fabrication

Compound semiconductor integration techniques draw ever more attention with increasing demands for high efficiency power electronics, photovoltaic or photonic devices. Aside from methods including epitaxial growth, one of these techniques is direct wafer bonding.An interesting wafer bonding approach for the above-mentioned types of applications would be a process resulting in formation of covalent bonds at room temperature (“covalent bonding”) or at significantly low temperatures (e.g. <100°C). Hence, the common issues arising from bonding of materials with different thermal expansion coefficients could be avoided, in the first place.The challenges in covalent bonding are mostly determined by the rigorous requirements for cleanliness with regards to particle and mobile ion contamination, as well as surface roughness and process uniformity. If the bonding process must produce a conductive interface an intermediate process step needs to be added that reduces/removes the stable native oxides from the substrates surfaces, as they would form an insulating layer in the final bond interface and hence lead to decreased electric device performance. This implies that in addition to the requirements for covalent wafer bonding, an effective and complete oxide removal needs to be guaranteed, to achieve a successful conductive wafer bond. However, as lattice point defects (e.g. interstitials and dislocations) form traps for charge carriers which would affect device performance as well, a suitable oxide removal step would leave the underlying bulk material mostly unchanged. The current work presents preliminary results of a novel technology designed to produce covalent / conductive wafer bonds. Results shown here were obtained in experiments using 200 mm wafers (prime Si and with 300 nm thermally grown oxide) supported by numerical modelling of sub-surface defects using SRIM [1]. The results obtained for Si are used as baseline for the new technology development (equipment and process) before applying it to compound semiconductor-based applications. [1] J. F. Ziegler, M. D. Ziegler, and J. P. Biersack, Nucl. Instrum. Methods Phys. Res. B 268, 1818 (2010).

Contactless resistivity and photoconductivity correlation to surface preparation of CdZnTe

Abstract We investigated the influence of lapping, polishing and chemical etching of semi-insulating CdZnTe by the contactless resistivity and photoconductivity method. This method can determine the sample parameters independent of the type and quality of the metallization. We observed that the evaluated sample resistivity varies with the surface preparation method up to a factor of two. The photoconductivity anti-correlates with resistivity and it changes strongly within one order of magnitude. We determined a correlation between surface roughness, oxide layer thickness and material resistivity. Deviation of the trends is visible with surface preparation by chemical etching. We propose an optimal surface treatment to maximize the resistivity and thus to decrease the dark current.

Joining with Electrochemical Support: Cold Pressure Welding of Copper – Weld Formation and Characterization

Cold pressure welding is a versatile process that can be used to weld most metals. It is, however, difficult to achieve a weld at room temperature through the application of pressure. As in every welding process, several different parameters have to be considered: the metals to be welded and their properties in terms of surface condition, cleanliness, strength of the metal, and so on. The surface condition and surface preparation methods are the most important parameters, since the cold weld is based solely on the contact between the two metal surfaces that are involved. Joining with electrochemical support (ECUF) is a new approach that overcomes most of the current process barriers and limitations through optimized electrochemical surface treatment and an improved process technology based on a pilger roll. This paper provides an overview of the ECUF process and current research results on the pressure welding of pure copper (CW004A). The formation of the weld has been investigated and the welding interface characterized in respect of its microstructure.

Microstructural analysis of the adhesion mechanism between old concrete substrate and UHPFC

The performance of any repaired concrete structure, and thus its service life, depends on the quality of the interfacial transition zone of the composite system formed by the repair material and the existing concrete substrate. In this work, the properties of the interfacial transition zone between normal concrete (NC) substrate as an old concrete and ultra-high performance fiber-reinforced concrete (UHPFC) as a repair material was investigated. Pull-off and splitting cylinder tensile tests were performed to quantify the bond strength in direct and indirect tensions, respectively. The microstructure of the interfacial transition zone was also studied using scanning electron microscopy and energy dispersive X-ray spectroscopy (SEM/EDS). Different types of NC substrate surface preparation methods were used. An optical three-dimensional surface metrology device was used to estimate the substrate roughness parameters. Based on the results, high interfacial bond strength was achieved on the 3rd, 7th, and 28th days. The pull-off test results revealed that all failures occurred in the substrate, regardless of the substrate surface roughness. The majority of failures in the split tensile test also occurred in the substrate. SEM/EDS proved that the use of UHPFC as a repair material chemically, physically, and mechanically improved the repaired interfacial transition zone to become stronger and denser, as well as more uniform, and durable. Moreover, the use of UHPFC increased the service life of repaired structures and minimized the number and extent of interventions to the lowest possible level.

(Invited) Reducing EOT and Interface Trap Densities of High-k/III-V Gate Stacks

In0.53Ga0.47Asis currently being investigated as a channel material for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) for post-Si complementary CMOS applications. A major obstacle facing the development of MOSFETs with In0.53Ga0.47As channels is the high density of traps (Dit ) at the gate dielectric/III-V semiconductor interface. Interface trap densities are relatively straightforward to detect for In0.53Ga0.47As channels, because of its narrow band gap (0.75 eV); at room temperature they cause, for example, a frequency-dependent hump in the depletion region of capacitance-voltage (CV) characteristics, and peaks in normalized conductance maps. To reduce the large trap densities at interfaces between In0.53Ga0.47As and the gate dielectric (typically Al2O3 or HfO2) various surface preparation and passivation methods are currently being investigated in the literature. In this presentation, we will discuss the development of novel, in-situ surface preparation methods prior to atomic layer deposition (ALD) of gate dielectrics on In0.53Ga0.47As, and their influence on EOT scaling and Dit . The surface treatments employed here consist of in-situ cleaning involving alternating cycles of nitrogen plasma and trimethylaluminum (TMA) pulses prior to ALD of different dielectrics. We demonstrate metal-oxide-semiconductor capacitors (MOSCAPs) with HfO2 and HfO2/Al2O3 dielectrics with very low Dit (in the low 1012 cm-2 eV-1 range) that can be scaled to sub-nm EOT (accumulation capacitances exceeding 3 µF/cm2 at 1 MHz for n-In0.53Ga0.47As). To elucidate the mechanisms by which these novel surface preparation methods allow for reducing both Dit and EOT, we present complementary studies of the MOSCAP electrical properties (GV and CV), interface chemistry and surface morphology using XPS, TEM, SIMS and atom probe tomography, as a function of surface cleaning parameters. Because the surface preparation methods employed here allow for both low Dit and low EOT, well behaved gate stacks can also be obtained on p-In0.53Ga0.47As channels. Comparisons of the CV results for p- and n-channels with calculated CV allow for analysis of the limitations of currently employed methods of Dit analysis, such as the Terman method.

Effect of Steel Surface Variation on Electrochemical Heterogeneity and the Protection Afforded By Organic Coatings

A well-prepared surface is the foundation on which an effective protective paint system is built. Most adhesion theories consider a rough surface to be favourable for achieving a high adhesive strength with a given organic coating. However, results of some case studies have found no relationship1,2 or inverse relationship3,4 between corrosion protection properties of the organic coating and the surface roughness. In the present work four conventional surface preparation methods including ultra high pressure (UHP) hydroblasting, wet abrasive blasting, acid pickling and abrasion with emery were used and compared to an as received control surface. Scanning vibrating electrode technique (SVET) was used to study the formation of active anodic sites on a local scale. Multiple repetitive scans were performed to study the dynamic of anodic activity. Figure 1 shows the variation of anodic activity by type of surface preparation in the early stages of corrosion. The level of surface activity was compared with the surface roughness and surface free energy. Electrochemical Impedance spectroscopy (EIS) and Open Circuit Potential (OCP) methods were used to study the effect of surface preparation on electrochemical properties at the surface as well as at the interface.Results revealed the important role of the native oxide film and the deleterious effect of surface contaminants on the protective performance of the subsequently applied organic coating. Also it was shown that a large surface profile combined with a highly active surface can be deleterious if an appropriate interaction between organic coating and metal is not achieved. This is due in part to surfaces with coarse surface profile presenting a larger active area. It appears that the number of initial anodic sites plays a key role in the long term anodic/cathodic activity and this number varies by the surface preparation method.Figure 1 Local distribution of current density for (a) as received (control), (b) abraded, (c) acid treated, (d) hydroblasted and (e) abrasive blasted samples after 5 min immersion in 1 mM NaCl.1. P.R. Sere, A.R. Armas, C.I. Elsners, A.R. Di Sarli, Corros. Sci., 38, 853–866 (1996).2. A. Momber, S. Koller, H. Dittmers, J. Protect. Coat. Lin., 44–50 (2004).3. D.M. Santágata, P.R. Seré, C.I. Elsner, A.R. Di Sarli, Prog. Org. Coat., 33, 44–54 (1998).4. D.J. Mills, K. Schaefer, Prog. Org. Coat. 69, 193–198 (2010).

(Invited) Reducing EOT and Interface Trap Densities of High-k/III-V Gate Stacks

We report on in-situ surface preparation methods prior to atomic layer deposition (ALD) of gate dielectrics on In0.53Ga0.47As, and investigate their influence on the ability to scale the equivalent oxide thickness (EOT) and to reduce interface trap densities (Dit ). The surface treatments employed here consist of in-situ cleaning involving alternating cycles of nitrogen plasma and trimethylaluminum (TMA) pulses prior to ALD of different dielectrics (1,2). We demonstrate metal-oxide-semiconductor capacitors with HfO2 dielectrics and low Dit (in the mid 1012 cm-2 eV-1 range) that can be scaled to sub-nm EOT. Accumulation capacitances exceed 3 µF/cm2 at 1 MHz on n-type In0.53Ga0.47As. Complementary studies of interface chemistry and surface morphology using transmission electron microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry as a function of surface cleaning parameters are presented and elucidate the mechanisms by which these novel surface preparation methods allow for reducing both Dit and EOT.

Dopamine-Assisted Deposition of Dextran for Nonfouling Applications

Nonfouling surfaces are essential for many biomedical applications, such as diagnostic biosensors and blood- or tissue-contacting implants. In this study, we demonstrate a simple one-step method to introduce dextran onto various substrates based on dopamine polymerization. It has been shown for the first time that dextran molecules could be incorporated into a dopamine polymerization product via mixing dextran with dopamine in a slightly alkaline solution. The codeposited film was characterized by X-ray photoelectron spectroscopy (XPS), the water contact angle, ellipsometry, and atomic force microscopy (AFM). Results reveal that it is possible to control the thickness and surface roughness via the deposition time and deposition repeat cycles. Furthermore, quartz crystal microbalance (QCM) measurements show that the dextran-modified surface inhibits protein adhesion. In addition, cell attachment has been significantly inhibited on dextran-modified surfaces even after exposure to water for as long as 2 months. The described dopamine-assisted dextran modification represents a simple and universal method for nonfouling surface preparation and can be potentially applied to improve the performance of various medical devices and materials.

Effect of Surface Treatment on Corrosion Resistance of 304 Stainless Steel Implants in Tyrode Solution

Abstract The effect of different surface preparation methods such as mechanical, chemical and electrochemical surface preparation on the formation, stability and deterioration of surface films formed on austenitic 304 stainless steel was investigated in Tyrode’s physiological solution by cyclic polarization curves, AC impedance measurements surface techniques. A hysteresis loop in a cyclic polarization curve was obtained that indicates a delay in repassivation of an existing pit when the potential is scanned cathodically. Electrolytic polishing and ultrasonic cleaning improves corrosion resistance by increasing the value of the corrosion potential and breakdown potential of the passive layer as well as the pit initiation potential. After mechanical polishing no perfect passivation region was observed. Change in surface fractal is in good agreement with the result obtained from height roughness factor of AFM.

Bond efficiency of EBR and EBROG methods in different flexural failure mechanisms of FRP strengthened RC beams

In recent years, using FRP sheets for strengthening and rehabilitation of reinforced concrete beams has been considered as an effective, convenient and practical method. Preventing surface debonding phenomenon is one of the issues facing the use of FRP sheets as external flexural and shear reinforcement of concrete beams. Premature debonding is caused by the lack of appropriate bonding between concrete surface and composite sheet. Externally Bonded Reinforcement (EBR) is a common method for mounting the sheet that uses conventional surface preparation. In addition, in recent years, Grooving method (GM) in its special form of Externally Bonded Reinforcement On Grooves (EBROG) has been proposed as an alternative to conventional method of surface preparation in EBR method. Although the capability of GM in preventing the premature debonding of FRP sheets from concrete substrate has been discussed in the literature, however, its efficiency compared to EBR technique in different flexural failure modes has not been investigated. In this paper, 12 reinforced concrete (RC) beams with dimension of 1000×140×120mm were strengthened with FRP sheets and were tested. Specimens with different tensile steel and FRP reinforcement ratios were designed in a way under which the EBR and EBROG methods can be compared in two failure mechanisms of concrete crushing and FRP sheet rupture after tensile steel yielding. The results clearly showed that using the method of grooving compared with surface preparation method leads to increased ultimate load carrying capacity and ductility, and absorbing the energy in the beams by preventing the premature debonding mechanism. The results also showed that the efficiency of grooving method compared to conventional surface preparation is more highlighted in the beams with FRP rupture mechanism.

Influence of surface preparation and microstructure on the passivity and corrosion behaviour of duplex stainless steels

The influence of various surface preparation methods (mechanical polishing, electropolishing and etching) on the passivity and the corrosion behaviour of a duplex stainless steel (UNS S32202) was studied using Auger spectroscopy and the electrochemical microcell technique. From surface analyses, the thickness and chemical compositions (ratios Cr/Fe and O2−/OH−, distribution of chloride and nitrogen) were determined. The corrosion behaviour of samples was investigated from local polarization curves. The presence of oxidation peaks and stable pitting was discussed considering the specimen microstructure and the properties of the passive film.

Bonding Metal Brackets On Tooth Surfaces

Objectives: To test the effect of different surface preparation methods on accurate bonding of orthodontic brackets on enamel, composite, and ceramic surfaces. In addition, we evaluated differences in bonding force and the adhesive remaining between precoated and non-precoated brackets after bonding on these surfaces. Methods: Samples of enamel, composite, and ceramic surfaces were prepared for bonding orthodontic brackets using roughening with a bur, a sandblaster, phosphoric acid solution, etching with hydrofluoric acid solution, and a porcelain activator depending on the surface tested. After surface preparation, the roughness of the surface was evaluated. Then, a primer was applied and precoated and non-precoated brackets were bonded to the surface. The bond strength was tested and the amount of remaining adhesive was evaluated. Results: Thermo cycling of teeth did not result in differences in bond strength. There was a significant increase in bonding strength between brackets without adhesive and precoated brackets after bonding on sandblasted composite surfaces. An increased roughness of dental surfaces did not result in increased bonding strength. There was adequate bonding of metal brackets on enamel after etching with 35% phosphoric acid for 10 seconds. Enamel surfaces that were roughened with a drill or sandblaster before etching had shear bonding strengths over the recommended 8 MPa. Just roughening of the enamel surface did not lead to efficient bonding. On a composite surface, roughening with a bur led to adequate bonding; while, sandblasting did not. For ceramics, after etching with hydrofluoric acid a porcelain activator was required. A reduction in surface roughness led to an increase in bond strength. After debonding, the quantity of adhesive remaining depended on the surface properties and the surface preparation before bonding. Clinical Significance: Bracket failure during orthodontic treatment leads to increased treatment time and costs. Bonding forces should not be too low to prevent bracket failure or too high to prevent damage to the surface from debonding. Both precoated and non-precoated bracket types can be used for adequate bonding on the tested dental surfaces.

Bond strength of resin cement to CO2 and Er:YAG laser-treated zirconia ceramic.

ObjectivesIt is difficult to achieve adhesion between resin cement and zirconia ceramics using routine surface preparation methods. The aim of this study was to evaluate the effects of CO2 and Er:YAG laser treatment on the bond strength of resin cement to zirconia ceramics.Materials and MethodsIn this in-vitro study 45 zirconia disks (6 mm in diameter and 2 mm in thickness) were assigned to 3 groups (n = 15). In control group (CNT) no laser treatment was used. In groups COL and EYL, CO2 and Er:YAG lasers were used for pretreatment of zirconia surface, respectively. Composite resin disks were cemented on zirconia disk using dual-curing resin cement. Shear bond strength tests were performed at a crosshead speed of 0.5 mm/min after 24 hr distilled water storage. Data were analyzed by one-way ANOVA and post hoc Tukey's HSD tests.ResultsThe means and standard deviations of shear bond strength values in the EYL, COL and CNT groups were 8.65 ± 1.75, 12.12 ± 3.02, and 5.97 ± 1.14 MPa, respectively. Data showed that application of CO2 and Er:YAG lasers resulted in a significant higher shear bond strength of resin cement to zirconia ceramics (p < 0.0001). The highest bond strength was recorded in the COL group (p < 0.0001). In the CNT group all the failures were adhesive. However, in the laser groups, 80% of the failures were of the adhesive type.ConclusionsPretreatment of zirconia ceramic via CO2 and Er:YAG laser improves the bond strength of resin cement to zirconia ceramic, with higher bond strength values in the CO2 laser treated samples.

Pore sealing of k 2.0 dielectrics assisted by self-assembled monolayers deposited from vapor phase

Self-assembled monolayers (SAMs) derived from 11-cyanoundecyltrichlorosilane precursor are deposited in vapor phase and characterized on ultra-low-k Chemical Vapor Deposition (CVD) dielectric films (k=2.0) with open porosity up to 50% and pore diameter as large as 3.5nm. Two surface preparation methods, such as Ar/H2 and Ar/N2 plasma pretreatments, are investigated and the pore sealing efficiency after SAM deposition is quantified from the experimental determination of open porosity and pore size measurements derived from toluene adsorption isotherms. In parallel, low-k damage is evaluated after surface preparation and SAM deposition by XPS depth profiling and by monitoring the change in refractive index, thickness and k value together with the –CH3 and –CH2 normalized FTIR peak areas vs. the pristine dielectric. Subsequently, a 10nm HfO2 thin film was deposited by Atomic Layer Deposition (ALD) in order to assess the pore-sealing capability of the proposed approach. When combining surface activation, SAM deposition and ALD, it was possible to accomplish a wide range of pore sealing. By adequate optimization, it was possible to obtain complete pore sealing after ALD, without precursor penetration into the porous low-k film, but at the expense of a 37% k increase for a 90nm dielectric thickness.