Surface Morphology Of Thin Films Research Articles

A mechanistic approach to determine the relationship between film structure, electronic properties, and photocatalytic activity of ALD ZnO thin films on glass gibers

Atomic layer deposition (ALD), a high-conformality thin-film deposition technique, offers the opportunity to immobilize photocatalytic materials on high surface area substrates. Textile substrates are inexpensive, easily accessible materials with a fibrous nature, making them high surface area scaffolds for photocatalytic applications. This study applied ZnO thin-film coatings to fabric structures with different numbers of ALD cycles. The effect of coating thickness on the surface and electronic properties of the films and their photocatalytic properties were investigated. SEM, XRD, PL, and UV–Vis were used to examine the surface morphology, crystal structure, defects, and optical properties of the ZnO thin films. As the film thickness increased, the crystal sizes and the number of defects in the structure increased. Contact angle and Hall Effect measurements revealed that these structural defects are present on the surface of the films. Optimum wettability, mobility, and photocatalytic efficiency values were observed in the 15-nm coated samples, resulting in the highest photocatalytic activity and a turning point.

Effects ofAs8structure formation on the surface morphology and internal microstructure of GaAs thin films.

Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to formAs8clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the deposition and growth of GaAs crystal films were performed. Additionally, the deposition and growth of GaAs thin films were simulated using molecular dynamics. The influence of As8clusters on the surface morphology and internal structure of GaAs films at different incidence angles, velocities and substrate temperatures was studied by using 'defect analysis technology' and 'diamond structure identification' in open source software, along with surface roughness and radial distribution function. Results show that with increasing incident angle, the number ofAs8clusters decreases and film density increases. Increasing incident velocity increases the irregular movement ofAs8clusters in air, and their deposition on the film surface affects the morphology of the film, and the surface roughness increases first and then decreases. Additionally, we investigated the effect of different substrate temperatures on the film surface. Results show that at a substrate temperature of 1173 K, the number ofAs8clusters in the film decreases or the As8clusters disappear, heterogeneous nucleation occurs in the film, and the crystallization rate increases. Although the dislocation line associated with nucleation may affect the mechanical and optical properties of the film, it considerably reduces the annealing effort after the deposition and growth.

Unraveling the Heat- and UV-Induced Degradation of Mixed Halide Perovskite Thin Films via Surface Analysis Techniques.

In recent years, organic-inorganic hybrid perovskite materials have become one of the most promising materials in the new generation of solar cells. These perovskites can provide excellent photoelectric properties after a simple fabrication process. Although perovskite solar cells have achieved high power conversion efficiency, instability concerns regarding material exposure to heat, moisture, air, and UV light present hindrances to commercialization. In this study, three kinds of perovskites (MAPbI3, MAPbI3-xBrx, and MAPbI3-xClx) were used to investigate the crystal stability upon exposure to heat and UV light. SEM, XRD, and FTIR were used to observe the surface morphology, crystal structure, and functional groups of the perovskite thin films. XPS was used to examine the surface composition and chemical state of the perovskite thin films under different conditions. Among these three types of perovskites, it was found that the MAPbI3-xBrx crystal demonstrated the best stability. ToF-SIMS was used to confirm the molecular distribution of the MAPbI3-xBrx films upon exposure to heat and UV light at different depths. ToF-SIMS revealed that [Pb]+ and [PbI]+ aggregated at the interface between the perovskite and ITO substrate after 14 days of thermal treatment. On the other hand, [Pb]+ and [PbI]+ were distributed uniformly after 3 days of UV exposure. This study systematically analyzed and revealed the thermal- and UV-induced degradation process of three perovskite films by using surface analysis techniques. It was concluded that bromine-doped perovskite films had better stability, and UV light caused more severe damage than heat.

Highly Efficient Flexible Photodetectors Based on Pb-Free CsBi3I10 Perovskites.

Perovskites have made remarkable advancements in optoelectronics owing to their high light absorption coefficient, tunable bandgap, and long charge diffusion. Nonetheless, the practical applications of Pb-based perovskites have been hindered by the instability and toxicity of Pb, especially in flexible electronics, which require high biosecurity and low toxicity. Hence, the development of stable Pb-free perovskite materials has gained increasing attention. In this study, we synthesized stable CsBi3I10 Pb-free perovskites outside the glovebox and improved the optoelectronic and mechanical performances of the CsBi3I10-based flexible devices through polyvinylcarbazole (PVK) doping. Flexible photodetectors with the device structure of PET/ITO/PEDOT:PSS/CsBi3I10:PVK/Au was fabricated. The results indicated that the introduction of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) reduced the surface roughness of the flexible PET substrate, while PVK doping further improved the surface smoothness of CsBi3I10 thin films, thereby enhancing the interfacial charge transportation. Moreover, PEDOT:PSS and PVK acted as stepwise hole transport layers in the photodetectors. The device demonstrated a maximum responsivity of 0.3 A/W, detectivity of 2.6 × 1011 Jones, and a response time of 102 μs at 650 nm. After subjecting it to 1000 bending tests, the light current retained 80% of its initial value. This study presents a universally applicable method for controlling the surface morphology of a flexible perovskite thin film.

High-performance solar-blind photodetectors based on Ta-doped ZnSnO3 single crystal thin films

High-quality Ta-doped ZnSnO3 single crystal thin films were grown on LiTaO3 substrates by pulsed laser deposition (PLD) method, and the effects of Ta doping on the lattice structure, surface morphology, electronic structure and photodetector performance of ZnSnO3 thin films are studied in detail. When the Ta doping content is 1 %, the [0001]-oriented ZnSnO3 thin film present the highest quality, which the optical band gap (3.75 eV), the smoothest surface roughness (0.83 nm), and the biggest carrier concentration (4.03 × 1019 cm−3). For the solar-blind photodetectors (PDs), based on these excellent characteristics, the 1 % Ta-doped ZnSnO3 PD exhibits large light-to-dark current ratio (>103), responsivity (21.37 A/W), detectivity ((3.63±0.71) ×1011 Jones) and external quantum efficiency (∼1.04× 104 %) under 254 nm UV light at an applied bias of 5 V. This study suggests that Ta doping can effectively improve the optoelectronic performance of ZnSnO3 PDs, laying the foundation for their application.

Adsorption and Structuration of PEG Thin Films: Influence of the Substrate Chemistry.

This study investigates polyethylene glycol (PEG) homopolymer thin film adsorption on gold surfaces of controlled surface chemistry. The conformational states of physisorbed PEG are analyzed through polarization modulation infrared reflection-absorption spectrometry (PM-IRRAS). The PM-IRRAS principle is based on specific optical selection rules allowing the detection of surface-specific FTIR response of thin polymer films on the basis of differential reflectivity at the polymer/substrate interface for p- and s-polarized light. The intensification of the electric field generated at the PEG/substrate interface for p-polarized IR light in comparison with s-polarized light permits the analysis of PEG chain anisotropy and conformational changes induced by the adsorption. Results showed that PEG adsorbs on model substrates having a rather hydrophilic character in a way that the PEG chains spread parallel to the surface. In the case of a very hydrophilic substrate, the adsorbed PEG chains are in a stable thermodynamic state which allows them to arrange and crystallize as stacked crystalline lamellae after adsorption. The surface topography and morphology of the PEG thin films were also investigated by atomic force microscopy (AFM). While in the bulk state, PEG crystallizes in the form of large spherulites; on substrates whose adsorption is favored by surface chemistry, PEG crystallizes in the form of stacked lamellae with a thickness equal to 20 nm. Conversely, on a hydrophobic substrate, the PEG chains do not crystallize and adsorption occurs in the statistical coil state.

Nanomechanical and Microstructural Characterization of Biocompatible Ti3Au Thin Films Grown on Glass and Ti6Al4V Substrates.

Ti-Au intermetallic-based material systems are being extensively studied as next-generation thin film coatings to extend the lifetime of implant devices. These coatings are being developed for application to the articulating surfaces of total joint implants and, therefore, must have excellent biocompatibility combined with superior mechanical hardness and wear resistance. However, these key characteristics of Ti-Au coatings are heavily dependent upon factors such as the surface properties and temperature of the underlying substrate during thin film deposition. In this work, Ti3Au thin films were deposited by magnetron sputtering on both glass and Ti6Al4V substrates at an ambient and elevated substrate temperature of 275 °C. These films were studied for their mechanical properties by the nanoindentation technique in both variable load and fixed load mode using a Berkovich tip. XRD patterns and cross-sectional SEM images detail the microstructure, while AFM images present the surface morphologies of these Ti3Au thin films. The biocompatibility potential of the films is assessed by cytotoxicity tests in L929 mouse fibroblast cells using Alamar blue assay, while leached ion concentrations in the film extracts are quantified using ICPOEMS. The standard deviation for hardness of films deposited on glass substrates is ∼4 times lower than that on Ti6Al4V substrates and is correlated with a corresponding increase in surface roughness from 2 nm for glass to 40 nm for Ti6Al4V substrates. Elevating substrate temperature leads to an increase in film hardness from 5.1 to 8.9 GPa and is related to the development of a superhard β phase of the Ti3Au intermetallic. The standard deviation of this peak mechanical hardness value is reduced by ∼3 times when measured in fixed load mode compared to the variable load mode due to the effect of nanoindentation tip penetration depth. All tested Ti-Au thin films also exhibit excellent biocompatibility against L929 fibroblast cells, as viability levels are above 95% and leached Ti, Al, V, and Au ion concentrations are below 0.1 ppm. Overall, this work demonstrates a novel Ti3Au thin film system with a unique combination of high hardness and excellent biocompatibility with potential to be developed into a new wear-resistant coating to extend the lifetime of articulating total joint implants.

Investigation of surface morphology, optical and electronic properties of Mg2Si thin films on Si(111)

Investigation of surface morphology, optical and electronic properties of Mg2Si thin films on Si(111)

Hydrogen-assisted chemical vapor deposition for heteroepitaxial growth of pure ε-Ga2O3 films

This study presents a novel approach to control the crystalline phase and surface morphology of substable ε-Ga2O3 thin films by regulating the hydrogen flow rate during chemical vapor deposition (CVD). The objective is to achieve high-quality and cost-effective heteroepitaxial pure-phase single-crystalline ε-Ga2O3 thin films on sapphire substrates. The crystalline phases and crystalline qualities of the thin films were determined by X-ray diffraction (XRD) and Raman spectroscopy. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results show that the surface of the ε-Ga2O3 films prepared by this method is flat and the minimum value of the surface roughness (RMS) is 4.130 nm. We explain the reason for the differences in the surface morphology of the films from the point of view of hydrogen passivation. Measurements by UV–Visible spectrophotometer, the UV cut-off edge is located at 250 nm and the optical band gap is about 4.9 eV. The experimental results show that with the increase of hydrogen flow rate, the content of β-Ga2O3 in the films and the surface roughness and maximum height of the contour (RZ) decreases, until a smooth surface of the pure-phase ε-Ga2O3 film is produced. The success of the chemical vapor deposition method for heterogeneous epitaxy of high-quality ε-Ga2O3 films on sapphire substrates greatly reduces the production cost and expensive investment in production equipment, which makes its application in high electron mobility transistors, piezoelectric resonators, and sun-blind detectors have great potential, and at the same time, this method provides ideas for the preparation of other metastable materials.

Optimization of TiN/TiOxNy Laminated Electrode Films for High-Performance Gene Sequencing Chip

With continuous advancement of the fourth generation nanopore gene sequencing technology, the requirements for performance of the electrode films in gene sequencing chips are increasing. This study utilized the high vacuum reactive magnetron sputtering method to examine the impact of working pressure on the electrical, electrochemical, crystal structure, chemical composition, and surface morphology of TiOxNy thin films in detail. The findings revealed that the TiN thin film deposited at 0.4 Pa exhibited the lowest resistivity of 391.9 μΩ·cm. Additionally, the TiOxNy thin film deposited at 1.6 Pa demonstrated the highest volumetric specific capacitance of 35.37 mF·cm−2·μm−1 at 5 mV·s−1. Utilizing the optimal parameters, TiOxNy laminated electrode thin films were in situ grown. Through measurements and analysis, it was found that the TiOxNy electrode thin film effectively achieves a 29.35% improvement in specific capacitance compared to the single layer TiOxNy electrode thin film. The integration of a TiN current collector with low resistivity effectively reduced the internal resistance of the electrode system and decreased the response time to 0.038 s. The features of low impedance and high specific capacitance of TiOxNy laminated thin films offer promising prospects for the preparation of gene sequencing chip with high throughput.

Influence of pH value of precursor on growth, structural, and optical properties of Cu2O thin films grown in Mist-CVD

The Cu2O thin films were prepared from copper (II) acetylacetonate (Cu(acac)2) by the mist chemical vapor deposition (mist-CVD) method, depending on the pH value of the prepared solution. It was confirmed that the well-oriented Cu2O thin films were grown at a dominant (111) peak according to X-ray diffraction (XRD) measurement using an alkaline precursor solution. The pH of the prepared solution drastically affected the surface morphology of the Cu2O thin films, and the lowest Root Means Square (RMS) was found for pH-10 of the precursor solution. The confocal Raman spectrum confirmed the formation of the cubic Cu2O crystal structures for each pH value of the precursor solution. The very transparent Cu2O thin films that were grown. The highest transmittance, 70%, was obtained at 1100 nm from the absorption spectrum for Sample B. The optical energy band gaps of Cu2O thin films were determined using Tauc's method and found to vary within a range of 2.53 to 2.49 eV, indicating a change in the material's electronic structure. The study demonstrated the crucial role of the pH level of the prepared solution in the growth of the Cu2O thin film. Specifically, it was found that a higher pH level resulted in a greater concentration of hydroxide ions (OH−), which was a crucial factor in the growth process. These findings can be significant in using p-type Cu2O thin films prepared based on mist-CVD for optoelectronic applications.

Tuning the crystalline orientation of quasi 1D anisotropic Sb2Se3 as a function of growth temperature for thin film photovoltaic applications

Antimony selenide (Sb2Se3) shows excellent photon absorption in the visible region and hence gaining tremendous attention from the last decade for thin film photovoltaics. Also, it has unique one-dimensional crystal structure and simple binary composition. However, the growth of Sb2Se3 thin films with its predominant orientation along [hk1] to make use of easy electrical charge transport seems challenging due to various governing growth parameters. In this work, we have studied the role of growth temperature (between 200 ℃ and 320 ℃) in the crystalline orientation of Sb2Se3 thin films on glass substrates via close-space thermal evaporation. In addition to growth orientation, we have investigated the effect of growth temperature on the surface morphology, elemental composition, film thickness, and optical properties of Sb2Se3 thin films. Electrical properties and photoresponse were measured on [hkl] and [hk0] oriented films to understand the effect of anisotropy and it is inferred that [hk1] oriented film as a favorable one for the charge transport. Also, the photoresponse results showed fair photoconductance under white light illumination and zero applied bias.

Improved cyclic durability and chemical stability of WO3 thin films by incorporation of Nb2O5

To achieve commercial smart windows operating in environments exposed to air and moisture with a hot weather, there has been a steady demand for large-area electrochromic thin films with high cyclic durability and chemical stability. In this article, we discuss the change in the electrochromic performance of WO3 thin films through incorporation of Nb2O5, which is stable against an acid electrolyte and heated water. With the increase in the content of Nb2O5 achieved by increasing the sputtering power, the charge density and transmittance modulation gradually decreased, while the cyclic durability was noticeably improved. When the as-deposited WO3 thin films were soaked in water at 70 °C, their flat surface and electrochromic properties degraded significantly. Conversely, the deterioration of the surface morphology of the Nb2O5-incorporated WO3 thin films after etching in the heated water was alleviated, which led to electrochromic performances on par with those of the unetched films. This is an effective approach for manufacturing of electrochromic devices with an enhanced stability to prevent structural degradation under hot and humid conditions.

Effect of heat treatment on the surface morphology and optical properties of the Al2O3 thin film for use in solar cells

Effect of heat treatment on the surface morphology and optical properties of the Al2O3 thin film for use in solar cells

Study of surface morphology of Ag thin films prepared by sputtering and irradiation with keV Ar ion beam

In this paper, the possibility of preparing silver nanostructures with a high area density of nanoparticles of various shapes by the ion beam sputtering (IBS) method, using a glancing angle deposition (GLAD) configuration, and subsequent irradiation with heavy ions, was tested. In the experiment, keV Ar+ ions were used for both IBS and bombardment. The prepared nanostructures were analyzed by RBS and microscopic methods of SEM and AFM. It turned out that IBS/GLAD makes it possible to create silver nanostructures (networks of individual silver nanoparticles), but only with relatively low areal densities (∼ 70 µm2). The bombardment led to changes in the porosity only after high ion fluences, but also to disruption of the nanostructures. Even so, the IBS method with GLAD configuration has been shown to be a promising way to prepare high-porosity nanostructures. Nevertheless, further experimental efforts will be needed to find the optimal technology.

Electrical performance of La-doped In2O3 thin-film transistors prepared using a solution method for low-voltage driving.

In this paper, La-doped In2O3 thin-film transistors (TFTs) were prepared by using a solution method, and the effects of La doping on the structure, surface morphology, optics, and performance of In2O3 thin films and TFTs were systematically investigated. The oxygen defects concentration decreased from 27.54% to 17.93% when La doping was increased to 10 mol%, and La served as a carrier suppressor, effectively passivating defects such as oxygen defects. In fact, the trap density at the dielectric/channel interface and within the active layer can be effectively reduced using this approach. With the increase of La concentration, the mobility of LaInO TFTs decreases gradually; the threshold voltage is shifted in the positive direction, and the TFT devices are operated in the enhanced mode. The TFT device achieved a subthreshold swing (SS) as low as 0.84 V dec-1, a mobility (μ) of 14.22 cm2 V-1 s-1, a threshold voltage (VTH) of 2.16 V, and a current switching ratio of Ion/Ioff of 105 at a low operating voltage of 1 V. Therefore, regulating the doping concentration of La can greatly enhance the performance of TFT devices, which promotes the application of such devices in high-performance, large-scale, and low-power electronic systems.

Study of Structural Morphology of Electrodeposited Ni Film

Structural morphology of thin electrodeposited metallic films plays a vital role in determining the properties of the films and their application. We prepared a range of Ni electrodeposited polycrystalline films using a BIOLOGIC potentiostat and investigated the effects of varying parameters such as the deposition rate and concentration of the solution to improve control over their properties. We conducted analysis of surface morphology of thin films of area 1cm2, as well as at microstructural level of area 50x50 um2, using ex-situ AFM and in-situ HS AFM. Ex-situ AFM data helps us to do quantitative surface analysis, including slope, scaling analysis [1] and grain area calculation as a function of time, concentration, and applied potential. HS AFM provides us with information about the grain structure evolution at microstructural level [2]. The texture of films was determined by XRD analysis. For the thin films, Ni[111] orientation was dominant, but for thick films, the dominant crystallographic orientations was Ni[200].We also performed EBSD analysis for Ni thin films after milling with focused ion beam. EBSD uses backscattered electron to obtain the information of structural morphology and crystallographic orientation of thin films layer by layer. The correlation between ex-situ AFM and EBSD data helps to gain a clear understanding of the structural features of the films. Liu, L., & Schwarzacher, W. (2013). Slope analysis and scaling analysis of electrodeposited thin films. Electrochemistry communications, 29, 52-54.Koorikkat, A., Payton, O., Picco, L., & Schwarzacher, W. (2020). Imaging the Surface of a Polycrystalline Electrodeposited Cu Film in Real Time Using In Situ High-Speed AFM. Journal of the Electrochemical Society, 167(16), 162510.

Experimental and theoretical analysis of a Visible-Light photodetector based on cadmium sulfide fabricated on interdigitated electrodes

The wide range of applications for photodetectors, such as in space, industry, medical, and military, has garnered significant research attention in recent years. In this study, an n-type single-layer photodetector based on a Cu/CdS/Cu metal–semiconductor-metal structure with a micro interdigitated electrode array (IDE) was fabricated. The surface morphology and absorption properties of the CdS thin films were characterized using atomic force microscopy, scanning electron microscopy, and UV–Vis spectrometry. The photo response characteristics of the photodetector were recorded across wavelengths of 400–780 nm. The optoelectronic analyses of the structure revealed a maximum responsivity value of approximately 98.73 % at 405 nm incident light, with a high response time of about 0.12 s. Furthermore, the structure was theoretically studied and simulated, with the simulation results demonstrating good agreement with the measured experimental evidence. The above results indicate that the present CdS photodetector holds excellent potential for use in high-sensitivity optoelectronic integrated circuits.

Abnormal high stability halide perovskite thin films and solar cells to alpha and gamma irradiations with varying fluence

Solar cells (SCs) and thin films made of methylammonium lead tri-iodide (MAPbI3) have demonstrated remarkable robustness when irradiated with alpha (He2+) and gamma radiations from americium-241. This study investigates changes in the structure, absorption, and surface morphology of perovskite thin films, as well as the photoelectronic properties of MAPbI3 SCs, with and without irradiation with He2+. According to the XRD analysis, tetragonal MAPbI3 showed increased crystallinity and a decrease in compression micro-strain with an increased flux of He2+. UV–Vis absorption remained unchanged until the flux exceeded 7.36 x 1012 He2+ cm−2. The bandgaps for irradiated films decreased similarly to pristine films up to a dose of 3.07 x 1012 He2+cm−2, with significant differences observed beyond this point. Digital images showed significant changes in thin films irradiated at fluences exceeding 3.07 x 1012 He2+ cm−2, with pits forming in grains responsible for the changes, confirmed by scanning electron microscopy. In conclusion, this study found that MAPbI3 thin films and SCs can withstand doses of He2+ up to 3.07 x 1012 He2+ cm−2 in a He2+ radiation environment.

Studies on physical properties of tin oxide films

This paper reports the study of some physical properties of thin films of tin oxide, such as the structural properties, surface morphology and optical transmission and reflection. The thin films of tin oxide were deposited by the method of thermal evaporation under vacuum. Transmission electron microscopy (TEM) was used to study the structural properties and the atomic force microscopy (AFM) method was used to study the surface morphology of thin films of tin oxide. The absorption and extinction coefficients of the investigated thin layers were determined from the transmittance and reflectance spectra recorded in the range of wavelengths between 190 and 1100 nm.