Surface-emitting Laser Diodes Research Articles

Design of electron blocking layer and its influence on the radial hole transport in GaN-based vertical cavity surface emitting laser diodes

Design of electron blocking layer and its influence on the radial hole transport in GaN-based vertical cavity surface emitting laser diodes

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors.

A vertical-type InGaN light-emitting diode with a resonant cavity was demonstrated with a 9 μm aperture size and a short cavity formed by hybrid distributed Bragg reflectors (DBRs). The approach involved designing epitaxial structures and utilizing an electrochemical etching process to convert heavily doped n-type gallium nitride (n+-GaN) layers into porous GaN layers as a porous-GaN DBR structure. Thirteen pairs of the conductive porous-GaN:Si/GaN:Si DBR structure provided a vertical current path in a vertical-type light-emitting diodes (LED) structure. The LED epitaxial layers were separated from sapphire for membrane-type LED structures through a laser lift-off process. During the free-standing membrane fabrication process, the dielectric DBR deposited on ITO/p-GaN:Mg layers was inverted from top to bottom, thereby establishing the concept of higher reflectivity for the bottom DBR compared to the porous-GaN DBR. The physical cavity length was reduced from about 2.3 μm for the LED membrane to 0.74 μm for the membrane-type LED with the embedded porous-GaN DBR structure. The divergent angles and line width of EL emission light were reduced from 124°/31.7 nm to 44°/3.3 nm due to the resonant cavity effect. The membrane-type LED structures with hybrid DBRs consisted of small divergent angles, narrow line width, and vertical current injection properties that have potential for directional emission light sources and vertical-cavity surface-emitting diode laser applications.

Resonator embedded photonic crystal surface emitting lasers

The finite size of 2D photonic crystals results in them being a lossy resonator, with the normally emitting modes of conventional photonic crystal surface emitting lasers (PCSELs) differing in photon lifetime via their different radiative rates, and the different in-plane losses of higher order spatial modes. As a consequence, the fundamental spatial mode (lowest in-plane loss) with lowest out-of-plane scattering is the primary lasing mode. For electrically driven PCSELs, as current is increased, incomplete gain clamping results in additional spatial (and spectral) modes leading to a reduction in beam quality. A number of approaches have been discussed to enhance the area (power) scalability of epitaxy regrown PCSELs through careful design of the photonic crystal atom1–3. None of these approaches tackle the inflexibility in being unable to independently modify the photon lifetime of the different modes at the Γ2 point. As a method to introduce design flexibility, resonator embedded photonic crystal surface emitting lasers (REPCSELs) are introduced. This device, combining comparatively low coupling strength photonic crystal structures along with perimeter mirrors, allow a Fabry–Pérot resonance effect to be realised that provides wavelength selective modification of the photon lifetime. We show that surface emission of different surface emitting modes may be selectively enhanced, effectively changing the character of the modes at the Γ2 point. This is a consequence of the selective modification of in-plane loss for particular modes, and is dependent upon the alignment of the photonic crystal (PhC) band-structure and distributed Bragg reflectors’ (DBRs) reflectance spectrum. These findings offer new avenues in surface emitting laser diode engineering. The use of DBRs to reduce the lateral size of a PCSEL opens the route to small, low threshold current (Ith), high output efficiency epitaxy regrown PCSELs for high-speed communication and power sensitive sensing applications.

Supermode Analysis and Characterization of Triangular Vertical Cavity Surface Emitting Laser Diode Arrays

Supermode Analysis and Characterization of Triangular Vertical Cavity Surface Emitting Laser Diode Arrays

Continuous wave room temperature operation of the 2 μ m GaSb-based photonic crystal surface emitting diode lasers

Continuous wave room temperature operation of 2 μm GaSb-based photonic-crystal surface-emitting diode lasers has been realized. The deep etched square mesa devices showed threshold current densities of 500 A/cm2 at 20 °C. The epi-side down mounted lasers generated above 10 mW of output power in the continuous wave regime and tens of milliwatts in pulses from the 200 × 200 μm2 aperture. The breakthrough in the device performance parameters was achieved thanks to a highly homogeneous air-pocket retaining epitaxial regrowth process optimized for a specifically designed antimonide diode laser heterostructure. The nanofabrication method utilizing low temperature atomic hydrogen surface cleaning yielded low disorder square lattice of droplet-shaped voids covered by uniform p-cladding layer. The laser emission spectrum as well as near/far field patterns demonstrated peculiar features presumably linked to deformation of the void shape during regrowth and formation of the array of filaments.

Experimental and theoretical investigations on the modulation capabilities of a sample of vertical cavity surface emitting laser diodes for atomic vapour applications

This paper discusses various frequency modulation and intensity modulation capabilities within a sample of direct laser current modulated identical vertical cavity surface emitting laser diodes. The presented analysis is based on measurements of the spectral amplitudes as a function of the applied modulation power at a constant modulation frequency of 3.517 GHz. Their evaluation by Bessel function fits produces the three modulation parameters: frequency modulation index, intensity modulation index (via the alpha parameter) and the side band asymmetry of the first order side bands. The variation of the laser diode’s modulation capability is discussed. It is found that the individual laser diodes show a significant variations in their modulation capabilities. Thus an experimental preselection of the laser diode is required to find laser diodes which are suitable as a light source for atomic vapour applications, with special emphasis on a coherent population trapping-based scalar magnetometers.

A photoacoustic patch for three-dimensional imaging of hemoglobin and core temperature

Electronic patches, based on various mechanisms, allow continuous and noninvasive monitoring of biomolecules on the skin surface. However, to date, such devices are unable to sense biomolecules in deep tissues, which have a stronger and faster correlation with the human physiological status than those on the skin surface. Here, we demonstrate a photoacoustic patch for three-dimensional (3D) mapping of hemoglobin in deep tissues. This photoacoustic patch integrates an array of ultrasonic transducers and vertical-cavity surface-emitting laser (VCSEL) diodes on a common soft substrate. The high-power VCSEL diodes can generate laser pulses that penetrate >2 cm into biological tissues and activate hemoglobin molecules to generate acoustic waves, which can be collected by the transducers for 3D imaging of the hemoglobin with a high spatial resolution. Additionally, the photoacoustic signal amplitude and temperature have a linear relationship, which allows 3D mapping of core temperatures with high accuracy and fast response. With access to biomolecules in deep tissues, this technology adds unprecedented capabilities to wearable electronics and thus holds significant implications for various applications in both basic research and clinical practice.

Photonic Crystal Surface Emitting Diode Lasers with λ near 2 µm

Epitaxially regrown electrically pumped photonic crystal surface emitting lasers (PCSELs) operating near 2 µm were designed and fabricated within a III-V-Sb material system. A high-index-contrast photonic crystal layer was incorporated into the laser heterostructures by air-pocket-retaining epitaxial regrowth. Transmission electron microscopy studies confirmed uniform and continuous AlGaAsSb initial growth over the nano-patterned GaSb surface, followed by the development of the air-pockets. The PCSEL threshold current density had a minimal value of ~170 A/cm2 in the 160–180 K temperature range when the QW gain spectrum aligned with the Γ2 band edge of the photonic crystal. The devices operated in a continuous wave regime at 160 K. The divergence and polarization of the multimode laser beam emitted from the 200 µm × 200 µm PCSEL aperture were controlled by filamentation.

Modal characteristics of coupled vertical cavity surface emitting laser diode arrays

The modal characteristics of dual-element coupled vertical cavity surface emitting laser (VCSEL) arrays are analyzed numerically and experimentally. A photonic crystal pattern etched into the top mirror optically defines the two elements of the array that are independently electrically biased. Using a two-dimensional complex waveguide analysis, we incorporate the effects of varying temperature and electron plasma-induced index suppression arising from asymmetric injection. The simulations are compared to experimental characterization of output power, lasing spectra, and far-field beam profile as a function of the two independent injection currents. Three distinct operating regimes are identified for the arrays: single independent local mode; a region of two modes that are primarily localized into a specific cavity; and a region of two supermodes whose fields extend across both elements. This analysis provides a physical intuition for the behavior of the dual-element coupled VCSEL array across its full operating range for emerging applications.

Impact of an AlGaN thin insertion layer in the p-GaN region on InGaN/GaN vertical-cavity surface-emitting laser diodes

In this work, we propose a p-GaN/p-AlxGa1-xN/p-GaN structure in p-type hole injection layer for InGaN/GaN vertical-cavity surface-emitting laser diodes (VCSEL), and this design can efficiently improve the hole injection into the multiple quantum wells (MQWs). In the p-GaN/p-AlxGa1-xN/p-GaN structure, the polarization induced charges generated at the heterojunction interface can produce the polarization induced electric field, which can accelerate holes. Meanwhile, the p-AlxGa1-xN layer also favors the current transport into the cavity center that can better enhance the device performance, i.e., the threshold current can be reduced and the lasing power can be enhanced. Moreover, we also find that the device performance is sensitive to the structural designs for the p-GaN/p-AlxGa1-xN/p-GaN junctions. Thus, the parametric investigations have also been conducted in this work.

Supermode Switching in Coherently-Coupled Vertical Cavity Surface Emitting Laser Diode Arrays

We report and analyze the supermode switching with current injection found for coherently-coupled dual-element vertical cavity surface emitting laser arrays. The output power, spectral characteristics, and far-field mode profile are measured for a range of bias current operating conditions. The coupling-induced enhanced output power from an in-phase or out-of-phase supermode is confirmed when approximately equal currents are injected into each array element. We observe that the coherent supermode switches from out-of-phase to in-phase supermode with increasing equal current injection. The switching is found to be consistent with coupled mode theory and a 1-dimensional spatial supermode model. The calculated modal gain of the out-of-phase and in-phase array supermodes are consistent with the observed switching of the coherent supermodes.

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited

Electro-Optical Numerical Modeling for the Design of UVA Nitride-Based Vertical-Cavity Surface-Emitting Laser Diodes

Design rules are proposed for UVA vertical-cavity surface-emitting laser diodes, and the modal gain and cavity properties are analyzed using an electro-optical numerical model. To achieve a low threshold current, it is important to align the gain-peak and resonance wavelengths, but the quantum-confined Stark effect makes that difficult because the former wavelength shifts with changing current density. The relationship between the gain peak and the injection current is discussed. Also, the quantum-well design affects the gain characteristics, and the gain properties with different quantum-well number, composition, and width are discussed.

Advanced Packaging Technology for Novel 1-dimensional and 2-dimensional VCSEL Arrays

Abstract In this paper we present an optimized manufacturing technique for special long-wavelength 1-dimensional and 2-dimensional Vertical Cavity Surface Emitting Laser Diode (VCSEL) arrays with focus on die bonding and a special wire bonding process as well as additional possibilities to make the manufacturing more productive and to increase the product quality, reliability, and life time. VCSEL arrays have a very broad application potential. Objective of this paper is the development of an assembly technology for long-wavelength VCSEL arrays with high positioning accuracy for automated production with high total yield, using gold-based conductive glue (because silver migration is a concern) securing high yield and extremely high reliability and lifetime. Due to special customer requirements, a final thickness of the conductive glue of 35 micron with low standard deviation is necessary. For highest reliability, gold wire bonding of the top side contact of the VCSEL to a silicon substrate with gold metallization has been a customer requirement. With the described technique we develop and produce customer specific products with dedicated wavelength, performance, and packaging options. Bases on our findings, very flexible and scalable solutions are possible, matching many different applications. Finally, we will present an overview of our results on the physical and electro-optical characterization of the VCSEL devices. This yielded a very productive manufacturing technique, meeting the requirements mentioned above. Special design features of the VCSEL ensure that the relatively high thermal resistance of the cured conductive glue layer does not impair the electro-optical properties or the lifetime of the VCSELs. For the interconnection of the top side contact we used gold wire with 20 microns diameter, using ball-wedge, Stand-Off Stich Bond process with special loop geometry, required by the customer. Due to the properties of the semiconductor material of the VCSELs a low bonding temperature is required, enabled by our special wire bonding process. Gold wire bonding delivered excellent results, by far exceeding the customer specification. The optical spectrum of the VCSELs and other measurements indicate that the assembly processes do not harm the laser diodes or their electro-optical properties. All customer requirements for the 1-dimensional and 2-dimensional VCSEL arrays have been met. The electro-optical and burn-in data furnished proof of the quality of the engineered assembly technology. The technologies developed for low current as well as high current laser arrays will enable new devices for a huge amount of new applications because of the novel manufacturing processes as well as innovative packaging of the VCSEL arrays.

Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes

This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.

Integrated role between VCSEL diodes and Gaussian pulse generators with ideal EDFA for self phase modulation instability management

Abstract This work outlined the integrated role between vertical cavity surface emitting laser diodes with Gaussian pulse generators and Ideal erbium doped fiber amplifier (EDFA) for the self-phase modulation instability management, as well as the signal/NP level (Power level [PL]) with the spectral frequency is simulated after wavelength division multiplexing (WDM) fiber at length of 10 km based third order Gaussian pulse generators. The light power variations against temperature after WDM fiber is also studied at length of 10 km based various order Gaussian pulse generators. Electrical received power (ERP) variations against temperature is clarified after avalanche photo diode (APD) photodetectors based various order Gaussian pulse generators. The study emphasis the bad effects of the increase of the temperature, and higher Gaussian pulse generators order on the signal power levels.

Spectrally resolved optical beam-induced current imaging of ESD induced defects on VCSELs

Optical beam-induced current (OBIC) mapping is widely used to characterize semiconductor lasers, particularly for failure analysis, in which the reliability has been a critical issue to be resolved spectrally and temporally. OBIC microscopy is advantageous for its non-invasiveness, when compared with electron beam-induced current (EBIC) microscopy. However, for high-speed devices, conventional OBIC methods may be limited in observing the spectral responses adequately. In this work, we present a modified OBIC microscopy based on a tunable ultrafast laser, to address the need for spectral resolving for precision failure spot analysis in vertical-cavity surface-emitting laser (VCSEL) diodes. The spectral OBIC response of VCSEL diodes is investigated by varying the irradiation wavelengths. Importantly, the ultrafast mode-locked laser provides broadband wavelength range to investigate photocurrent responses of the VCSELs sample. Specifically, the OBIC, electroluminescence (EL) detection, and the reflectance of the normal and the electrostatic discharge (ESD) damaged VCSELs are compared. We have found the ESD damaged VCSELs showing a redshifted spectral response.

1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.

Performance enhancement of transceiver system based inter satellite optical wireless channel (IS-OWC) for ultra long distances

Abstract This work clarified the performance enhancement of transceiver system based (IS-OWC) link by using both vertical cavity surface emitting laser diode (VCSEL) and continuous wave (CW) laser sources. The proposed model has been investigated and discussed. The inter satellite link has been modelled by using optisystem simulator at 10 Gb/s and 40 Gb/s for long distance up to 5000 km by using return to zero (RZ) and non return to zero (NRZ) schemes. The performance of IS-OWC system has been investigated by estimating the evaluation parameters such as Q-factor and bit error rate (BER). The results revealed that the NRZ is superior to RZ due to its reduced bandwidth. The BER obtained at 5000 km distance for NRZ scheme is 10−12 and 10−10 when using VCSEL and CW laser source respectively. The Q-factor records higher values at different distances when using VCSEL.

Photoassisted chemical smoothing of AlGaN surface after laser lift-off

To fabricate AlGaN-based ultraviolet (UV) vertical cavity surface-emitting laser diodes, a pair of distributed Bragg reflectors (DBRs) having a smooth surface is desired to have a high quality factor (Q). In this work, photoassisted chemical etching (PCE) was attempted to smoothen the -c(000-2) AlN surface after removing the sapphire substrate by means of the laser lift-off process. First, the conditions for PCE were optimized using an Xe lamp and KOH solution. The root-mean-square roughness of the -c(000-2) AlN surface was reduced from 30.5 to 5.6 nm, which enables us to fabricate an improved HfO2/SiO2 DBR on the AlN surface. Then, using the optimized PCE technique, improved UV (Al,Ga)N planar microcavities were fabricated and distinct cavity-mode-related emissions were observed using the photoluminescence (PL) technique. By comparing the PL spectra between the samples with and without PCE treatment, the Q value at 303 nm for the case of the improved DBR was determined to increase from 174 to 270. The increase in the Q value is mainly attributed to the reduction of scattering losses in optical cavities. Furthermore, the discussion on the mechanism of improved surface during the PCE treatment is given. Consequently, PCE is demonstrated to be a feasible approach to refine the quality of ultraviolet nitride microcavities.