Abstract
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
Highlights
T HERE has been considerable recent interest in the development of photonic crystal surface emitting lasers (PCSELs) [1]
PCSEL devices have traditionally been realised with wafer fusion [2]–[5], but more recently epitaxial overgrowth through MBE [1], [20] and MOVPE has been utilised [21]–[24]
Epitaxial regrowth allows single-crystal PCSEL structures to be realised with encapsulated voids or fully in-filled photonic crystals [21]
Summary
T HERE has been considerable recent interest in the development of photonic crystal surface emitting lasers (PCSELs) [1]. A photonic crystal (PC) is formed through a 2D periodic variation in refractive index, and by utilising 2nd order Bragg diffraction a surface emitting laser can be realised [2]. McKenzie was supported by the Royal Commission for the Exhibition of 1851 and CST Global Ltd. The work of Richard J.
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