Abstract
This paper analyzes 2D photonic crystal surface-emitting laser diodes with void-containing and all-semiconductor structures by comparing their simulated mode distribution, band structure, and coupling coefficients. A photonic crystal design with a square lattice and circle atoms is considered.
Highlights
A photonic crystal surface-emitting laser (PCSEL) is a semiconductor laser in which a photonic crystal (PC) provides in-plane feedback and out-of-plane scattering.1 Laser oscillation occurs when light guided in-plane satisfies the second order Bragg diffraction condition, allowing large-area coherent emission.1,2 PCSELs have a number of desirable attributes, including single mode operation,2 low divergence,3 on-chip beam steering,4 Watt-class power,5 polarization and beam shape control,6–8 and coherently coupled arrays.9PCSELs were originally achieved by wafer fusion,2 but this method can result in discontinuities in the crystal lattice at the fusion interface inside the device, generating undesirable defect states
We present a comparative analysis of voidcontaining and all-semiconductor InP-based PCSELs based on our own fabricated devices
The results show that void-containing structures can realize higher coupling coefficients than an allsemiconductor structure (∼50% higher)
Summary
A photonic crystal surface-emitting laser (PCSEL) is a semiconductor laser in which a photonic crystal (PC) provides in-plane feedback and out-of-plane scattering. Laser oscillation occurs when light guided in-plane satisfies the second order Bragg diffraction condition, allowing large-area coherent emission. PCSELs have a number of desirable attributes, including single mode operation, low divergence, on-chip beam steering, Watt-class power, polarization and beam shape control, and coherently coupled arrays.. Similar structures operating at 1.3 μm have been reported, as well as optically excited laser structures.15 These recent reports have provided a significant step in the development of InP-based PCSELs that may allow PCSEL technologies to find applications in areas such as high-speed optical communications, free-space communications, and LiDAR.. Careful control of the MOVPE growth conditions allows the realization of either void-containing PC structures or allsemiconductor structures.. Square lattice PC layer, where κ3 describes the light coupled in the forward and backward directions [Fig. 2(a)], with the coupling in the oblique in-plane directions represented as κ1 [Fig. 2(b)].21 The magnitudes of these coupling coefficients are governed by the index contrast, mode overlap, and photonic crystal shape. The results show that void-containing structures can realize higher coupling coefficients than an allsemiconductor structure (∼50% higher). Our results are discussed in terms of the final application and a variation in operating characteristics brought about by the structural variation in the manufacturing process
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
