Surface-electrode Ion Trap Research Articles

Mitigating the Effects of Au-Al Intermetallic Compounds Due to High-Temperature Processing of Surface Electrode Ion Traps

Mitigating the Effects of Au-Al Intermetallic Compounds Due to High-Temperature Processing of Surface Electrode Ion Traps

Surface-Electrode Ion Trap Development

We present a segmented linear surface electrode ion trap design that can be used for various applications in optical clocks and quantum computation based on trapped 171Yb+ ions. Our simulations show that calculated trap depth can reach up to several electronvolts and that the pseudopotential minimum of the trap is located above the trap surface at a distance greater than 80 μm. The described pseudopotential simulations and calculations of different trap parameters can be used to design the planar trap with required parameters. This design could be scaled to store a long chain of ions and used for quantum logic applications as well.

High-fidelity trapped-ion qubit operations with scalable photonic modulators

Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturized deployable devices like clocks and sensors, these elements must ultimately be microfabricated, ideally monolithically with the trap to avoid losses associated with optical coupling between physically separate components. In this work we design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap. These devices consist of piezo-optomechanical photonic integrated circuits configured as multi-stage Mach-Zehnder modulators that are used to control the intensity of light delivered to a single trapped ion on a separate chip. We use quantum tomography employing hundreds of multi-gate sequences to enhance the sensitivity of the fidelity to the types and magnitudes of gate errors relevant to quantum computing and better characterize the performance of the modulators, ultimately measuring single qubit gate fidelities that exceed 99.7%.

Coherent Control of Trapped-Ion Qubits with Localized Electric Fields.

We present a new method for coherent control of trapped ion qubits in separate interaction regions of a multizone trap by simultaneously applying an electric field and a spin-dependent gradient. Both the phase and amplitude of the effective single-qubit rotation depend on the electric field, which can be localized to each zone. We demonstrate this interaction on a single ion using both laser-based and magnetic-field gradients in a surface-electrode ion trap, and measure the localization of the electric field.

Surface-electrode ion trap design for near-field microwave quantum gates

We present a design study into an ion trap electrode geometry for applying near-field microwave two-qubit gates. This design features an ‘S’-shaped meander electrode to passively null the microwave field. It has ground planes separating the meander electrode from all of the DC and single-qubit microwave electrodes, which should reduce the sensitivity of the microwave field distribution to the boundary conditions of these electrodes. We show that it is possible to design a single-layer trap with this geometry such that the simulated microwave field null overlaps with the RF field null, and that the positions of these nulls can be simulated to a precision of 100 nm with moderate computing resources. We also show that such a trap can be designed such that ion chains can be trapped, transported and split with feasible DC and RF voltages. While this particular design is optimized for ^{43}Ca^{+} ions, our approach could be applied to other ions by changing the microwave frequency to match the corresponding qubit transition frequency.

Characterization of fast ion transport via position-dependent optical deshelving

Ion transport is an essential operation in some models of quantum information processing, where fast ion shuttling with minimal motional excitation is necessary for efficient, high-fidelity quantum logic. While fast and cold ion shuttling has been demonstrated, the dynamics and specific trajectory of an ion during diabatic transport have not been studied in detail. Here we describe a position-dependent optical deshelving technique useful for sampling an ion's position throughout its trajectory, and we demonstrate the technique on fast linear transport of a $^{40}\text{Ca}^+$ ion in a surface-electrode ion trap. At high speed, the trap's electrode filters strongly distort the transport potential waveform. With this technique, we observe deviations from the intended constant-velocity (100 m/s) transport: we measure an average speed of 83(2) m/s and a peak speed of 251(6) m/s over a distance of 120 $\mu$m

Optimization and implementation of a surface-electrode ion trap junction

We describe the design of a surface-electrode ion trap junction, which is a key element for large-scale ion trap arrays. A bi-objective optimization method is used for designing the electrodes, which maintains the total pseudo-potential curvature while minimizing the axial pseudo-potential gradient along the ion transport path. To facilitate the laser beam delivery for parallel operations in multiple trap zones, we implemented integrated optics on each arm of this X-junction trap. The layout of the trap chip for commercial foundry fabrication is presented. This work suggests routes to improving ion trap junction performance in scalable implementations. Together with integrated optical addressing, this contributes to modular trapped-ion quantum computing in interconnected two-dimensional arrays.

RF Performance Benchmarking of TSV Integrated Surface Electrode Ion Trap for Quantum Computing

Surface electrode ion trap is highly promising for practical quantum computing due to its superior controllability on the trapped ions. With advanced microfabrication techniques, silicon has been developed as an ion trap substrate for delicate surface electrodes design and monolithic electro-optical components integration. However, the high RF loss of silicon hinders the possible large-scale implementation. In this work, we demonstrate a through silicon via (TSV) integrated ion trap, which has low RF loss due to the elimination of wire bonding (WB) pads on the surface and the miniaturization of form factor. We also fabricate two types of conventional WB traps with or without a grounding screen layer. The RF performances of different ion traps are tested and compared, in terms of on-chip S-parameter, postpackaging resonance, and resulting power loss. The results show that the TSV trap has low S21 (~0.2 dB at 50 MHz), high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> factor (~22), and low power loss (0.26 W) compared to WB traps. In addition, 3-D finite element modeling (FEM) is employed for electric field visualization and RF loss analysis of different traps. The extracted results from the modeling show a decent agreement with the measurements. In addition to various RF tests, the design, fabrication, and ion trapping operation of different ion traps are presented. This work provides insights into RF loss of ion trapping devices and offers a new solution for RF loss reduction.

(Invited) 3D Integration of Surface Electrode Ion-Trap on Silicon and Glass Substrates for Quantum Information Processing

Surface electrode ion trap is a promising candidate for quantum information processing (QIP), due to its feasibilities towards large-scale fabrication. There are several important considerations for the realization of surface ion trap including choices of substrate and interconnections. In this paper, surface electrode ion traps on different substrates (e.g., high-resistivity silicon, silicon with ground plane and glass) are fabricated, assembled and tested. To simultaneously leverage the established fabrication technique of silicon and superior insulation property of glass, we further demonstrate a novel ion trap design with heterogenous integration of silicon and glass, acting respectively as ion trap and interposer substrates. The vertical connection between the silicon ion trap and the glass interposer is achieved by through silicon via (TSV) and micro bump. This combination demonstrates promising RF and trapping properties.Standard back end of line CMOS process is used for the fabrication of ion traps on both silicon and glass substrates. With 12-inch silicon/glass wafers, ~2,000 traps with different design dimensions can be fabricated simultaneously. For ion trap on high-resistivity silicon substrate (HR trap, Fig. 1(a)), lithography-defined electroplating of 3.7 µm Cu with Au finish is conducted on top of 3 µm patterned SiO2 layer. For ion trap on silicon with grounding plane (GND trap, Fig. 1(b)), 1 µm Cu damascene process is used to form the meshed grounding plane that shields silicon substrate from RF signal penetration. For ion trap on glass substrate (glass trap, Fig. 1(c)), Cu and Au can be directly electroplated onto glass substrate after adhesion and seed layers deposition. To evaluate the RF performance of various traps, S parameter measurement and resonator test are conducted. Glass trap features extremely low RF loss as compared to silicon counterparts.Heterogenous integration of silicon ion trap and glass interposer with TSV interconnections (TSV trap, Fig. 1(d)) is thus proposed, in which the possibility of integration with electronics (DACs) components is preserved on the silicon ion trap chip, whereas the RF performance of the entire device can be guaranteed by the glass interposer. As shown in Fig. 1(e) and (f), integrated photonics passive components such as grating couplers can be implemented into the silicon trap chip for ion addressing with laser. Additional grounding layer with designed openings on top of grating couplers is introduced to further minimize RF loss. 88Sr+ ions are successfully trapped on both glass and TSV traps.In summary, this work discusses the performance of ion traps on various substrates and demonstrates the silicon-glass integrated system to enable the scalability of surface electrode ion trap. The work was supported by A*STAR Quantum Technology for Engineering (A1685b0005). Figure 1

High-Fidelity Bell-State Preparation with ^{40}Ca^{+} Optical Qubits.

Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Mølmer-Sørensen and light-shift gates. We recently proposed a variant of the light-shift scheme where the qubit levels are separated by an optical frequency [B. C. Sawyer and K. R. Brown, Phys. Rev. A 103, 022427 (2021)PLRAAN2469-992610.1103/PhysRevA.103.022427]. Here we report an experimental demonstration of this entangling gate using a pair of ^{40}Ca^{+} ions in a cryogenic surface-electrode ion trap and a commercial, high-power, 532nm Nd:YAG laser. Generating a Bell state in 35 μs, we directly measure an infidelity of 6(3)×10^{-4} without subtraction of experimental errors. The 532nm gate laser wavelength suppresses intrinsic photon scattering error to ∼1×10^{-5}.

Ultra-low-vibration closed-cycle cryogenic surface-electrode ion trap apparatus.

We describe the design, commissioning, and operation of an ultra-low-vibration closed-cycle cryogenic ion trap apparatus. One hundred lines for low-frequency signals and eight microwave/radio frequency coaxial feed-lines offer the possibility of implementing a small-scale ion-trap quantum processor or simulator. With all supply cables attached, more than 1.3W of cooling power at 5K is still available for absorbing energy from electrical pulses introduced to control ions. The trap itself is isolated from vibrations induced by the cold head using a helium exchange gas interface. The performance of the vibration isolation system has been characterized using a Michelson interferometer, finding residual vibration amplitudes on the order of 10nm rms. Trapping of 9Be+ ions has been demonstrated using a combination of laser ablation and photoionization.

Controlling the Surface Roughness of Surface-Electrode Ion Trap Based on Micro-Nano Fabrication

The surface-electrode ion trap is one of the most promising devices to realize large-scale and integrated quantum information processing. However, a series of problems are faced in the micro-nano fabrication of surface-electrode ion traps. A prominent one is the difficulty to control the thick film surface roughness. A rough electrode surface could produce excessive radio frequency (RF) loss and deteriorate trapping ability of the surface-electrode ion trap. In this paper, a thick film micro-nano fabrication technology to control the surface roughness is presented, which can reduce the roughness of thick film surface-electrode down to 6.2 nm, while being controllable between 6.2 nm and 45 nm. Therefore, it can also provide a basis for studying the influence of electrode surface roughness on trap performance. The micro-nano fabrication technology is not only suitable for surface-electrode ion traps with various configurations, but also be further applied to researches of MEMS, solar cells and surface science.

Creation of double-well potentials in a surface-electrode trap towards a nanofriction model emulator

We demonstrate a microfabricated surface-electrode ion trap that is applicable as a nanofriction emulator and studies of many-body dynamics of interacting systems. The trap enables both single-well and double-well trapping potentials in the radial direction, where the distance between the two potential wells can be adjusted by the applied RF voltage. In the double-well configuration, parallel ion strings can be formed, which is a suitable system for the emulation of the Frenkel–Kontorova (FK) model. We derive the condition under which the trap functions as an FK model emulator. The trap is designed so that the Coulomb interaction between two ion strings becomes significant. We report on the microfabrication process for such downsized trap electrodes and experimental results of single-well and double-well operation with calcium ions. With the trap demonstrated in this work we can create atomically accessible, self-assembled Coulomb systems with a wide tuning range of the corrugation parameter in the FK model. This makes it a promising system for quantum simulations, but also for the study of nanofriction in one and higher dimensional systems.

State Readout of a Trapped Ion Qubit Using a Trap-Integrated Superconducting Photon Detector.

We report high-fidelity state readout of a trapped ion qubit using a trap-integrated photon detector. We determine the hyperfine qubit state of a single ^{9}Be^{+} ion held in a surface-electrode rf ion trap by counting state-dependent ion fluorescence photons with a superconducting nanowire single-photon detector fabricated into the trap structure. The average readout fidelity is 0.9991(1), with a mean readout duration of 46 μs, and is limited by the polarization impurity of the readout laser beam and by off-resonant optical pumping. Because there are no intervening optical elements between the ion and the detector, we can use the ion fluorescence as a self-calibrated photon source to determine the detector quantum efficiency and its dependence on photon incidence angle and polarization.

Integrated optical multi-ion quantum logic.

Practical and useful quantum information processing requires substantial improvements with respect to current systems, both in theerror rates of basic operations and in scale. The fundamental qualities of individual trapped-ion1 qubits are promising for long-term systems2, but the optics involved in their precise control are a barrier to scaling3. Planar-fabricated optics integrated within ion-trap devices can make such systems simultaneously more robust and parallelizable, as suggested by previous work with single ions4. Here we use scalable optics co-fabricated with a surface-electrode ion trap to achieve high-fidelity multi-ion quantum logic gates, which are often the limiting elements in building up the precise, large-scale entanglement that isessential to quantum computation. Light is efficiently delivered to a trap chip in a cryogenic environment via direct fibre coupling on multiple channels, eliminating the need for beam alignment into vacuum systems and cryostats and lending robustness to vibrations and beam-pointing drifts. This allows us to perform ground-state laser cooling of ion motion and to implement gates generating two-ion entangled states with fidelities greater than 99.3(2) per cent. This work demonstrates hardware that reduces noise and drifts in sensitive quantum logic, and simultaneously offers a route to practical parallelization for high-fidelity quantum processors5. Similar devices may also find applications in atom- and ion-based quantum sensing and timekeeping6.

Integrated multi-wavelength control of an ion qubit.

Monolithic integration of control technologies for atomic systems is a promising route to the development of quantum computers and portable quantum sensors1-4. Trapped atomic ions form the basis of high-fidelity quantum information processors5,6 and high-accuracy optical clocks7. However, current implementations rely on free-space optics for ion control, which limits their portability and scalability. Here we demonstrate a surface-electrode ion-trap chip8,9 using integrated waveguides and grating couplers, which delivers all the wavelengths of light required for ionization, cooling, coherent operations and quantum state preparation and detection of Sr+ qubits. Laser light from violet to infrared is coupled onto the chip via an optical-fibre array, creating an inherently stable optical path, which we use to demonstrate qubit coherence that is resilient to platform vibrations. This demonstration of CMOS-compatible integrated photonic surface-trap fabrication, robust packaging and enhanced qubit coherence is a key advance in the development of portable trapped-ion quantum sensors and clocks, providing a way towards the complete, individual control of larger numbers of ions in quantum information processing systems.

Surface-Electrode Ion Trap With Ground Structures for Minimizing the Dielectric Loss in the Si Substrate

The surface-electrode ion trap is one of the key devices in modern ion-trapping apparatus to host the ion qubits for quantum computing. Surface traps fabricated on the silicon substrate have the versatility for complex electrode fabrication with 3-D integration capability. However, Si-induced dielectric loss has to be considered in trap design, and a ground structure is being incorporated to mitigate this concern. In this article, surface-electrode ion trap is fabricated using the standard Cu back-end process on a 300-mm Si wafer platform. Several process novelties are demonstrated: 1) the use of electroplated Cu/Au layers using microfabrication techniques to form the surface electrodes; 2) the use of dry etching to form the fine-gap oxide trench between the electrodes for reducing the charge-induced stray electric field; 3) the use of Cu mesh ground structure to enhance the resonance performance of the trap; and 4) process optimization to minimize the undercut in Cu/Au electrodes. Promising electrical properties are obtained from the fabricated ion trap with a leakage current failure rate of $40~\mu \text{m}$ are evaluated for their resonance performance with and without the ground plane. By incorporating ground plane into the ion trap, the resonance performances are significantly improved with an output power increment of 11 and 13 dB and $Q$ factor increment of 2 and 6 for the corresponding trap types.

Efficient isotope-selective pulsed laser ablation loading of 174Yb+ ions in a surface electrode trap.

We report a highly efficient loading of 174Yb+ ions in a surface electrode ion trap by using single pulses from a Q-switched Nd:YAG laser to ablate neutral atoms, combined with a two-photon photo-ionization process. The method is three orders of magnitude faster to load a single ion as compared to traditional resistively heated sources and can load large collections of ions in seconds. The negligible thermal load of this method enables the use of this ablation-based loading scheme in ion traps operating under cryogenic conditions.

Integrated 9Be+ multi-qubit gate device for the ion-trap quantum computer

We demonstrate the experimental realization of a two-qubit Mølmer–Sørensen gate on a magnetic field-insensitive hyperfine transition in 9Be+ ions using microwave near-fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was optimized to produce a high oscillating magnetic field gradient at the ion position. The measured gate fidelity is determined to be 98.2 ± 1.2% and is limited by technical imperfections, as is confirmed by a comprehensive numerical error analysis. The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer.

Multilayer ion trap with three-dimensional microwave circuitry for scalable quantum logic applications

We present a multilayer surface-electrode ion trap with embedded 3D microwave circuitry for implementing entangling quantum logic gates. We discuss the electromagnetic full-wave simulation procedure that has led to the trap design and the characterization of the resulting microwave field-pattern using a single ion as a local field probe. The results agree with simulations within the uncertainty; compared to previous traps, this design reduces detrimental AC Zeeman shifts by three orders of magnitude. The design presented here can be viewed as an entangling gate component in a library for surface-electrode ion traps intended for quantum logic operations.