Surface-Electrode Ion Trap Development

Abstract

We present a segmented linear surface electrode ion trap design that can be used for various applications in optical clocks and quantum computation based on trapped 171Yb+ ions. Our simulations show that calculated trap depth can reach up to several electronvolts and that the pseudopotential minimum of the trap is located above the trap surface at a distance greater than 80 μm. The described pseudopotential simulations and calculations of different trap parameters can be used to design the planar trap with required parameters. This design could be scaled to store a long chain of ions and used for quantum logic applications as well.