Surface Electric Field Distribution Research Articles

Simulation Study of a Super-Junction Deep-Trench LDMOS With a Trapezoidal Trench

A super-junction (SJ) deep-trench (DT) lateral double-diffused metal-oxide-semiconductor transistor improved by tilting the DT sidewalls is proposed. The incline of sidewalls introduces some vertically varying charges into the SJ drift regions on both sides of the DT. Therefore, the adverse effect of the DT on the surface electric field distribution is withstood, and the device can approach an ideal state of charge-balance. Simulation results show compared with a conventional device, which has the same drift region concentration and the same size but the perpendicular sidewalls, the proposed device presents a better figure of merit over 2.5 times higher. Besides, a feasible fabrication process for the proposal is presented and discussed.

Open Loop Split Ring Resonator Based Thin Layer Dielectric Sensor

Background: Split ring resonators are fundamental structures used to design metamaterial structures. These split ring resonators are designed for various scientific applications with complex and simple geometrical shapes. Metamaterials provide the extended spectral resolution, which is beyond the scope of conventional devices reported in open literature. Such metamaterials when operated on the non-ionizing terahertz frequencies (0.1-10 THz) are highly suitable for non destructive sensing of living organisms. Methods: The objective of this research work is to evaluate the performance of classic square split ring resonator as a metamaterial biosensor operating at terahertz frequency by depositing thin layers of dielectric materials resembled as hybridized layers of DNA sample. Results: Highly localized surface electric field distribution indicates strong LC resonance at resonant frequency. Electric field is focused on the capacitive coupled split gap area. The effective parameters of biosensor clearly showed left handedness that is negative permittivity and permeability and refractive index. Biosensor was analyzed by observing shift in transmission (S21) coefficients. Resonant frequency shifts itself towards the lower end of terahertz band due to the loading of thin layers of samples that are composed of different dielectric materials. Conclusion: Metamaterial biosensor sense the presence of tiny layers of different dielectric materials. This was due to the fact that disturbances in the surface electric field caused change in transmission of sensor's resonant frequency. The simple design of the sensor would overcome the issue of reusability of circuit. Such sensor would highly be suitable for sensing the presence of tiny bio molecules. Keywords: Metamaterial, dielectric layers, equivalent circuit, sensor, terahertz, split ring resonator.

Enhancement‐mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer

To optimise the surface electric field distribution of conventional enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), a novel enhancement-mode AlGaN/GaN HEMT with a P-type GaN gate is proposed for the first time in this work. The proposed AlGaN/GaN HEMT has an optimised surface electric field using a partial GaN cap layer. Through the introduction of the partial GaN cap layer in the region between the gate and drain electrodes, a two-dimensional electron gas (2DEG) density reduction is obtained due to the polarisation effect. By modifying the concentration distribution of high-density 2DEG, the electric field modulation effect is applied, which introduces a new electric field peak. The high electric field peak near the gate edge of the drain side effectively decreases, and the electric field is more uniformly redistributed from the gate to the drain regions. The simulation results show that the breakdown voltage can be improved by 192.2% compared with that of the conventional enhancement-mode AlGaN/GaN HEMTs.

Ultra-Thin Dual-Band Polarization-Insensitive and Wide-Angle Perfect Metamaterial Absorber Based on a Single Circular Sector Resonator Structure

We present a simple design for an ultra-thin dual-band polarization-insensitive and wide-angle perfect metamaterial absorber (PMMA) based on a single circular sector resonator structure (CSRS). Both simulation and experimental results reveal that two resonance peaks with average absorption above 99% can be achieved. The dual-band PMMA is ultra-thin with total thickness of 0.5 mm, which is <l/38 with respect to the operation frequencies. The surface electric field and current distributions of the unit-cell structure reveal the physical picture of the dual-band absorption. Numerical simulations demonstrate that the PMMA could retain high absorption level at large angles of polarization and incidence for both transverse electric (TE) and transverse magnetic (TM) modes. Furthermore, the absorption properties of the PMMA can be adjusted by varying the geometric parameters of the unit-cell structure.

Rigorous time-domain analysis of statistically oriented graphene sheet fluctuations

PurposeImportant statistical variations are likely to appear in the propagation of surface plasmon polariton waves atop the surface of graphene sheets, degrading the expected performance of real-life THz applications. This paper aims to introduce an efficient numerical algorithm that is able to accurately and rapidly predict the influence of material-based uncertainties for diverse graphene configurations.Design/methodology/approachInitially, the surface conductivity of graphene is described at the far infrared spectrum and the uncertainties of its main parameters, namely, the chemical potential and the relaxation time, on the propagation properties of the surface waves are investigated, unveiling a considerable impact. Furthermore, the demanding two-dimensional material is numerically modeled as a surface boundary through a frequency-dependent finite-difference time-domain scheme, while a robust stochastic realization is accordingly developed.FindingsThe mean value and standard deviation of the propagating surface waves are extracted through a single-pass simulation in contrast to the laborious Monte Carlo technique, proving the accomplished high efficiency. Moreover, numerical results, including graphene’s surface current density and electric field distribution, indicate the notable precision, stability and convergence of the new graphene-based stochastic time-domain method in terms of the mean value and the order of magnitude of the standard deviation.Originality/valueThe combined uncertainties of the main parameters in graphene layers are modeled through a high-performance stochastic numerical algorithm, based on the finite-difference time-domain method. The significant accuracy of the numerical results, compared to the cumbersome Monte Carlo analysis, renders the featured technique a flexible computational tool that is able to enhance the design of graphene THz devices due to the uncertainty prediction.

Numerical Investigation of High-Voltage Partial Buried P/N-Layer SOI LDMOS

High-voltage lateral double-diffused MOSFETs with partial buried P/N-type silicon layers (PBPL/PBNL) in silicon-on-insulator (SOI) technology are investigated numerically. In the lateral direction, the partial buried silicon layer (PBL) can introduce an additional electric field peak, which improves the surface electric field distribution and increases the charge accommodation in the drift region. Consequently, in the vertical direction, PBPL and PBNL can both induce higher electric field into the buried-oxide layer, and thus enhance the breakdown voltage (BV) significantly. Due to the higher electron concentration in the drift region, the ON-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}$ ) can be also reduced remarkably. The 2-D simulation results show that PBPL and PBNL SOIs can achieve BVs of 296 and 365 V, respectively, in comparison to the conventional SOI (BV ~ 225 V) and the buried N-layer SOI (BV ~ 231 V). In addition, by comparison with the conventional SOI, ${R}_{ \mathrm{\scriptscriptstyle ON}}$ can be reduced about 31.7% and 13.8% for PBPL and PBNL SOIs, respectively. Finally, hybrid PBPL/PBNL SOIs are studied and shown to be capable of further improving the device performance.

Multi-band planar miniaturised negative-index metamaterials

In this paper, a miniaturised negative-index metamaterial (NIM) based on planar concentric split ring resonators was designed, simulated, fabricated and tested that can maintain NIM properties. The offered metamaterial structure showed miniaturisation factor compared with traditional metamaterial unit cells and conformed better effective medium ratio (EMR). Finite-difference time-domain method-based computer simulation technology for the numerical analyses and a vector network analyser (N5227A) was used for the measurements. The proposed metamaterial exhibited multi-band response in conjunction with the NIM property over the certain frequency bands in the microwave spectra and the EMR considerably improved compared to previously reported metamaterials. The measured results revealed good agreement with the simulated results. The distribution of surface current, electric field and equivalent circuit model were verified for the proposed structure. The size, scattering parameters and EMR parameters of the proposed miniaturised NIM is appropriate for multi-band applications.

A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs

A robust and area efficient adjusted multi-section guard rings (AMS) edge termination structure is employed to a 4H-SiC power MOSFET device rated at 1.7kV and fabricated without extra process steps or masks in this paper. The lightly doped p-type guard ring with adjusted multi-section spacing, which is similar with varied lateral doping technology widely used in silicon edge termination, creates a smoother and more uniform surface electric field distribution across all rings, resulting in a higher reverse blocking voltage with minimal edge termination area. The fabricated AMS-MOSFET devices with an active area of 2.5mm2 have reverse blocking voltage up to 2.5kV at room temperature. Compared to the conventional SiC MOSFETs with the uniform ring spacing, the AMS-MOSFET with the same edge termination area shows more than a 25% increase in the reverse blocking voltage. Furthermore, high-temperature reverse bias stress test is performed to verify junction and termination robustness of the AMS-MOSFET device. A small variation in the reverse blocking voltage and drain-source leakage current are achieved under 168h high-temperature reverse bias stress with the drain bias of 1360V at ambient temperature of 175°C, which suggests an expected robustness in high power application for the fabricated SiC MOSFET with the AMS structure.

Simulation of the Interfaces of Anatase TiO2 (001), (100), (101) with KOH Solution By Molecular Dynamics

Hydrogen can be produced by the photoelectrochemical water splitting system with KOH solution as electrolyte and TiO2 as photoanode. In this work, the interaction between anatase TiO2 (001), (100), (101) surfaces and KOH solution is studied by molecular dynamics simulations at room temperature. The dynamic interfacial structures and properties of K+ on anatase TiO2 surfaces are obtained by analyzing the radial distribution function, the diffusion coefficient, the surface charge distribution, electric field and electrostatic potential distribution. The results have revealed that the coordination number of K+ is reduced because it adsorbed on the anatase TiO2 surface, resulting in the weakening of hydration. And there are three kinds of K+ adsorption sites on (001) and (101) surfaces and two adsorption sites on (100) surface. To obtain more information about the effect of KOH on the interface, the electrostatic properties of KOH solution and aqueous solution were qualitatively compared and analyzed. The maxima of the charge density and electric field profiles are increased in KOH solution but remains more or less at the same position as for the aqueous solution. There is a significant difference in electrostatic potential comparison. While the electrostatic potential of aqueous solution are smooth and well converged, that of KOH solution are rather noisy. This can be explained by the asymmetrical distribution of K+ and OH-. Therefore, the KOH solvent contributes substantially to the electrostatic behavior of the liquid near the interface. Based on Grahame double layer model, the zeta potential of the three surfaces (001), (100), (101) in inner Helmholtz layer is observed as 6.42V, 4.76V and 5.18V, respectively, corresponding to the width of Stern layer 3.99Å, 4.40 Å, 3.72 Å. The thickness is in full agreement with already mentioned compact layer (3.4 Å). We also approximately estimate that the surface depletion layer width of anatase (001), (100), (101) is about 7.16Å, 10.23Å and 8.23Å, respectively. All above results clearly illustrate the enormous improvement in our quantitative understanding of the molecular-scale structure and diffusional dynamics of K+ at semiconductor-electrolyte interfaces, as compared with continuum-based Grahame model of the electrical double layer. And the differences between aqueous solution and KOH solution qualitatively explain the effect of KOH solution on the electrolyte, which can increase the conductivity of the solution and provide a chemical reaction bias. Investigations of the double layer structure, which are presently under way in our group, are expected to provide further insight into semiconductor/electrolyte interface. Figure 1

Improved Hybrid Leapfrog ADI-FDTD Method for Simulating Near-Field Coupling Effects Among Multiple Thin Wire Monopole Antennas on a Complex Platform

A hybrid one-step leapfrog alternating-direction-implicit finite-difference time-domain (ADI-FDTD) method integrated with a thin wire algorithm is developed for simulating the near-field mutual coupling effects among multiple wire antennas on an electrically large warship platform, where induced surface current and electric field distributions are also captured. Its stability analysis, based on von Neumann method, is performed in a semi-analytical way and verified numerically. In order to demonstrate its accuracy and efficiency, the near-field mutual coupling effect between two thin wire antennas is at first investigated. Then, it is applied to accurately characterize complex electromagnetic environment effects on a warship with multiple thin wire antennas, and the results are compared with those obtained by the other commercial simulators.

Studying Properties of Composite Nano-PAA-Au Array for the Optimal SERS Sensitivity

The composite structure of nano-porous anodic alumina (nano-PAA) coated with noble metal layer has been demonstrated to be one kind of high-sensitive surface-enhanced Raman scattering (SERS)-active substrate. However, the experimental investigations on influences of parameters were restricted by correlation between variables. And in relevant simulation studies, nano-tips at intersections of unit edges on the surface and the metal attaching to inside walls of nano-holes which are crucial for the enhancement of electric field were commonly idealized. To obtain the optimal structure of nano-PAA-Au array for SERS applications, numerical evaluations of the electric field distributions and intensities at hotspots were carried out on a proposed precise model. The influence of structure and excitation parameters which determined the electromagnetic enhancement have been systematically investigated. The numerical data shows that the intensity and distribution of surface electric field is evidently affected by both the characteristics of nano-tips and the metal attaching to the inside wall of holes. In addition, the designed substrate was synthesized accordingly and demonstrated to be higher sensitive with an achieved enhancement factor of 1.04 × 107. The study would be helpful in designing high-sensitive SERS-active substrates.

Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer

Lateral double-diffused MOSFETs (LDMOS) are widely used in high voltage integrate circuits and smart power integrate circuits because of their lateral channels and their electrodes located on the surface of the device, thereby facilitating integration with other low-voltage circuits and devices, and they have become the core technology of the second electronic revolution. In order to optimize the breakdown characteristics and the performance of the LDMOS, in this paper, a novel LDMOS is proposed with the vertical assisted deplete-substrate layer (ADSL) on the basis of traditional LDMOS structure. The new ADSL layer makes the vertical depletion region below the drain expand to substrate excessively, thus introduces a new electric field peak at the bottom of the ADSL layer by using the electric field modulation effect, so that the vertical electric field is optimized. The ISE simulation results show that when the lengths of the drift region of ADSL LDMOS and traditional LDMOS are both 70 m, the breakdown voltage is increased from 462 V to 897 V, improved by about 94%. Also, the figure-of-merit (FOM) is upgraded from 0.55 MW/cm2 to 1.24 MW/cm2, increased by 125%. Therefore, the new structure ADSL LDMOS has a great improvement in device performance compared with that of the traditional LDMOS. Moreover, authors have studied the ADSL LDMOS from three parts, all of these confirm that the new structure has a great potential application in power device. Firstly, through the lateral surface electric field distributions and vertical electric filed distributions of conventional LDMOS and ADSL LDMOS, a new electric field peak at the bottom of the ADSL is introduced in the vertical direction. Secondly, the mechanism for the new structure can present a deeper understanding through the ADSL LDMOS concentration and structural parameter optimization process. The FOM is optimized when the drift region concentration and ADSL concentration are 1.81015 cm-3 and 6.51015 cm-3, respectively, and it can reach a best value when the ADSL length is 40 m. Thirdly, the ADSL layer is further partitioned and optimized. On the basis of the new structure, the breakdown voltage is increased to 938 V when the new structure is based on the dual partition, and in the triple partition the breakdown voltage reaches 947 V. In this paper, through simulations, the detailed analyses of the proposed new structure of the mechanism and its performance are conducted, and the breaking of the breakdown characteristics of silicon-based devices is of special significance for developing the lateral power devices.

Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer

In order to reduce the high electric field peak near the gate edge and optimize the non-uniform surface electric field distribution of conventional AlGaN/GaN high electron mobility transistor (HEMT), a novel AlGaN/GaN HEMT with a partial GaN cap layer is proposed in this paper. The partial GaN cap layer is introduced at the top of the AlGaN barrier layer and is located from the gate to the drain drift region. A negative polarization charge at the upper hetero-junction interface is induced, owing to the polarization effect at the GaN cap layer and AlGaN barrier layer interface. Hence, the two dimensional electron gas (2DEG) density is reduced. The low-density 2DEG region near the gate edge is formed, which turns the uniform distribution into a gradient distribution. The concentration distribution of 2DEG is modified. Therefore, the surface electric field distribution of AlGaN/GaN HEMT is modulated. By the electric field modulation effect, a new electric field peak is produced and the high electric field peak near the gate edge of the drain side is effectively reduced. The surface electric field of AlGaN/GaN HEMT is more uniformly redistributed in the drift region. In virtue of ISE-TCAD simulation software, the equipotential and the surface electric field distribution of AlGaN/GaN HEMT are obtained. For the novel AlGaN/GaN HEMT employing a partial GaN cap layer, the 2DEG is completely depleted from the gate to the drain electrodes, arising from the low-density 2DEG near the gate edge, while the 2DEG is partly depleted for the conventional AlGaN/GaN HEMT. The surface electric field distribution of the conventional structure is compared with the one of the novel structures with partial GaN cap layers of different lengths at a fixed thickness of 228 nm. With increasing length, the new electric field peak increases and shifts toward the drain electrode, and the high electric field peak on the drain side of the gate edge is reduced. Moreover, the breakdown voltage dependence on the length and thickness of the partial GaN cap layer is achieved. The simulation results exhibit that the breakdown voltage can be improved to 960 V compared with 427 V of the conventional AlGaN/GaN HEMT under the optimum conditions. The threshold voltage of AlGaN/GaN HEMT remains unchanged. The maximum output current of AlGaN/GaN HEMT is reduced by 9.2% and the specific on-resistance is increased by 11% due to a 2DEG density reduction. The cut-off frequency keeps constant and the maximum oscillation frequency shows an improvement of 12% resulting from the increased output resistance. The results demonstrate that the proposed AlGaN/GaN HEMT is an attractive candidate in realizing the high-voltage operation of GaN-based power device.

An ultra-thin triple-band polarization-insensitive metamaterial absorber for S, C and X band applications

In this paper, a polarization-insensitive triple-band metamaterial absorber is proposed for wide angle of incidence. The proposed absorber has been designed in such a way that absorptions occur in S, C and X bands at 3.1, 4.6 and 9.5 GHz, respectively. The unit cell consists of two modified square-shaped closed-loop resonators printed on top of a dielectric substrate and backed by a complete copper lamination. The proposed structure is ultra-thin having a total thickness of 1.6 mm, approximately \(\lambda _{0}/61\), \(\lambda _{0}/41\) and \(\lambda _{0}/20\) with respect to absorption frequencies in various bands, where \(\lambda _{0}\) is the free space wavelength. Moreover, the structure shows good absorptions over wide angle of incidence up to 45° for both TE- and TM-polarized waves. Surface current and electric field distributions have been studied to analyse the absorption mechanism of the proposed absorber. Parametric analyses have also been carried out for suitable selection of absorption frequencies. Finally, a prototype of the absorber has been fabricated and experimentally tested in order to validate the simulation results which are in good agreement.

Super junction LDMOS with step field oxide layer

A novel step-oxide super junction-lateral double-diffused metal-oxide-semiconductor field-effect transistor (SOSJ-LDMOS) structure is proposed and optimised which allows the high breakdown voltage (BV) and low-specific on-resistance ( R on,sp ). The proposed structure overcomes the effect of thick field oxide formed by shallow trench isolation process in conventional buffer layer SJ-LDMOS ( N -buffered SJ-LDMOS), effectively enhancing the performance of the SJ-LDMOS. Thanks to the SO layer, a new electric field peak has been introduced in the surface electric field distribution, which makes the lateral surface electric field uniform in the off-state. Moreover, due to the thinner oxide layer, in the on-state the majority of electron current is accumulated near the top surface under the field plate and the thinner oxide layer also provides a wider current flowing path. In the virtue of integrated systems engineering (ISE) simulation, not only has the BV of SOSJ-LDMOS been increased, but also the R on,sp has been reduced simultaneously compared with the N -buffered SJ-LDMOS in the same drift length. In addition, when SOSJ-LDMOS and N -buffered LDMOS are at the same BV, the R on,sp of SOSJ-LDMOS is decreased by 26.3-38.9%, compared with the N -buffer SJ-LDMOS.

An ultralow on-resistance high-voltage SOI p-channel LDMOS

A novel SOI pLDMOSFET with ultralow specific on-resistance (Ron,sp) is proposed and investigated by simulation. It features an Accumulation-mode Gate (AG) directly extending to the drain over the P-type drift region (called AG pLDMOS). The AG consists of a linearly doped N-region and two back-to-back diodes. In the on-state, the AG makes major-carrier holes accumulate along the drift region surface. The accumulation layer provides an ultralow-resistance current path, and thus significantly reduces the Ron,sp. In the off-state, the AG modulates the surface electric field distribution to improve the breakdown voltage (BV); Moreover, the N-region in the AG assists in depleting the P-type drift region, and thus increases the doping concentration of the drift region (Nd) and further reduces the Ron,sp. The two back-to-back diodes are employed to sustain high voltage between the gate and drain in the on-state and off-state, respectively. As a result, the AG pLDMOS not only improves the tradeoff between the BV and Ron,sp, but also makes the Ron,sp almost independent of the Nd. Compared with the conventional SOI pLDMOS, the AG pLDMOS reduces the Ron,sp by 74.6% and increases the BV from 221 V to 319 V.

Broadband linear polarization conversion based on the coupling of bilayer metamaterials in the terahertz region

A linear polarization converter composed of metal patch arrays and metal chiral metamaterial in the terahertz region is designed and analyzed, which can convert linearly polarized wave to its cross polarization in the transmission mode. Compared with other polarization conversion devices, this device has the advantages of broadband and highly efficiency. The in-depth analysis of physical mechanism is illustrated by using simulated surface current and electrical field distributions.

Analytical model of LDMOS with a single step buried oxide layer

In this paper, a two-dimensional analytical model is established for the Single-Step Buried Oxide SOI structure proposed by the authors. Based on the two-dimensional Poisson equation, the analytic expression of the surface electric field and potential distributions for the device is achieved. In the SBOSOI (Single-Step Buried Oxide Silicon On Insulator) structure, the buried oxide layer thickness changes stepwise along the drift region, and the electric field in the oxide layer also varies with the different buried oxide layer thickness. These variations will modulate the surface electric field distribution through the electric field modulation effects, which makes the surface electric field distribution more uniform. As a result, the breakdown voltage of the device is improved by 60% compared with the conventional SOI structure.To verify the accuracy of the analytical model, the device simulation software ISE TCAD is utilized, the analytical values are in good agreement with the simulation results by the simulation software. The results verified the established two-dimensional analytical model for SBOSOI structure is valid, and it also illustrates the breakdown voltage enhancement by the electric field modulation effect sufficiently.The established analytical models will provide the physical and mathematical basis for further analysis of the new power devices with the patterned buried oxide layer.

Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers**Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61234006), the Open Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201301), and the National Science and Technology Major Project of the Ministry

The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study. Three geometrical parameters, i.e., mesa height, mesa angle and mesa bottom corner, are investigated by numerical simulation. The simulation results show that a deep mesa height, a small mesa angle and a smooth mesa bottom (without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution. Moreover, an optimized mesa structure without sub-trench (mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated. A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm2 are obtained from the fabricated diode with a 30-μm thick N− epi-layer, corresponding to 85% of the ideal parallel-plane value. The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge.

Ultralow ON-Resistance High-Voltage p-Channel LDMOS With an Accumulation-Effect Extended Gate

The high ON-resistance and the limited breakdown voltage (BV) are the two major issues for the p-channel lateral double-diffused MOSFET (pLDMOS). To solve the two issues, an ultralow specific ON-resistance ( $R_{\mathrm{\scriptscriptstyle ON},\textrm {sp}}$ ) pLDMOS with improved BV is proposed and investigated by simulation. It features an extended gate (EG) with accumulation effect over the drift region and a P+ floating layer (PFL) in the N-sub. In the ON-state, the EG induces the hole accumulation layer along the drift region surface, providing an ultralow-resistance conducting path. This accumulation-type current transport mode makes $R_{\mathrm{\scriptscriptstyle ON},\textrm {sp}}$ almost independent of the drift region doping concentration ( $N_{d}$ ) and contributes to a much lower $R_{\mathrm{\scriptscriptstyle ON},\textrm {sp}}$ , which greatly breaks through the silicon limit of $R_{\mathrm{\scriptscriptstyle ON},\textrm {sp}}\propto \textrm {BV}^{2.5}$ . In the OFF-state, the EG not only modulates the surface electric field ( $E$ -field) distribution to enhance the BV, but also helps deplete the drift region to increase the optimized $N_{d}$ , and thus further reduce $R_{\mathrm{\scriptscriptstyle ON},\textrm {sp}}$ . Moreover, the PFL is not depleted, and thus equipotential in the lateral direction. Therefore, the PFL not only modulates the bulk $E$ -field distribution at the source and drain sides but also introduces an additional vertical diode to sustain a higher BV. Owing to the effects mentioned above, the simulated results show that the EG PFL pLDMOS decreases $R_{\mathrm{\scriptscriptstyle ON},\textrm {sp}}$ by 68% and increases the BV by 47% compared with the conventional pLDMOS.