GaAs has been employed as a material for acoustic charge transport (ACT) devices principally because it is a piezoelectric semiconductor. However, because GaAs is a weakly piezoelectric material, the surface acoustic wave (SAW) interdigital transducer (IDT) drive power required to achieve charge transport is typically about 27 dBm. An enhancement of the piezoelectric coupling could potentially improve device lifetime, reliability, dynamic range, and decrease device power consumption. To this end the use of a ZnO film on top of an ACT-like substrate to enhance the piezoelectric coupling has been investigated. Moreover, the ZnO film structure would also make it possible to monolithically integrate SAW devices and GaAs electronics. In order to provide a basis for the design of such devices, SAW properties are reported, including velocity, effective piezoelectric coupling constant, and attenuation, measured on ZnO films sputtered on {001}-cut 〈110〉-propagating GaAs substrates. The measurements have been performed for the different film thicknesses over the range of 1.6–4 μm and with films of different grain sizes. IDTs operating between 180 and 360 MHz were fabricated, and a knife-edge laser probe was used to measure the SAW propagation. The measured data for the velocity shows good agreement with theoretical values. The quality of the dc triode-sputtered films was superior to that of the rf magnetron-sputtered ones due to higher K2 and less attenuation. The value of K2 for the 1.6-μm-thick dc triode-sputtered one was measured to be 0.75% which is comparable with 1.07% for bulk crystalline ZnO.