Abstract
A new surface acoustic wave interdigital transducer (IDT) and unidirectional transducer (UDT) are described. Using a lift off-etching method or a lift off-anodic oxidation method, controllable gaps between electrodes with good insulation can be obtained. Experimental results show 7.8 dB insertion loss with small ripples of ±1.2 dB for a conventional IDT, and directivities of 6 dB/transducer at 438 MHz for a floating electrode type unidirectional transducer (FEUDT) and 17 dB/transducer for its second harmonic at 868.5 MHz. Also, minimum insertion loss of 3.6 dB for a low loss FEUDT filter at 440 MHz is obtained. These techniques are applied for the separation between electrodes of VLSI.
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