Sputtering Rate Research Articles

Monotonically Decreasing Ferromagnetic Resonance Linewidth of Cu/Ni0.81Fe0.19 Bilayer Heterostructures with the Increasing Sputtering Rate of the Cu Layer

Monotonically Decreasing Ferromagnetic Resonance Linewidth of Cu/Ni_0.81Fe_0.19 Bilayer Heterostructures with the Increasing Sputtering Rate of the Cu Layer

Use of Pulsed RF Glow Discharge Optical Emission Spectroscopy for the Study of Elemental Distribution of Li-NMC Cathode at Various State of Charge in Li-Ion Batteries

Glow discharge optical emission spectroscopy (GDOES) is an analytical technique that provides both a surface and depth profile of the elemental composition and distribution of solid or porous samples. Although GDOES is a destructive technique, it provides the advantage of being a high throughput technique that is highly sensitive to all elements from H to U and can provide high resolution (from nm to µm) depth profiles of elemental distributions in practically any sample. Previous works have investigated and optimized the operating parameters of using GDOES to study negative electrode materials and from the data gathered therein [1] we used 5% H2 in Ar gas in this study to increase sputtering rate of Li-NMC cathode materials and to increase sensitivity to Li in the sample to provide a more detailed elemental distribution. This study investigates the use of GDOES as a method for analyzing elemental and specifically lithium distribution in Li-NMC cathode materials in extreme depth and with validation from other techniques such as x-ray photoelectron spectroscopy (XPS) and x-ray fluorescence (XRF) and with additional morphological analysis of cells using x-ray computed tomography (X-ray CT).In this study coin cells were assembled in an Ar filled glovebox using a 15 mm diameter double sided graphite anode coated on a Cu current collector, 14 mm double sided NMC 111 cathode coated on an Al current collector, either a Celgard 3401 or 5550 separator, and 75 µL of 1M LiPF6–EC:EMC (3:7) electrolyte. The coin cells were then brought outside and EIS data was taken on the freshly made cells. They were then allowed to rest for 12 hours before going through a formation cycle at a C-rate of C/20. After the formation cycle, all cells went through 10 charge/discharge cycles at a C-rate of C/5. After these cycles EIS data was taken again and the cells were then charged to different states of charge (SOC) of 0, 25, 75, and 100% and again EIS data was taken after this. The cells were then brought back into the glovebox where they were de-crimped and disassembled. The electrodes were then rinsed in DMC and dried. They were then analyzed using XPS for surface analysis, XRF for elemental mapping, and X-ray CT for analysis of electrode morphology. Finally, they were analyzed using GDOES and the through thickness Li atomic distribution was plotted for the SOCs listed. An example of atomic concentration distribution of various elements for a SOC of 0% is shown by Figure 1. This study aims to validate the use of GDOES to generate accurate Li distribution profiles and elemental distributions in Li-NMC cathode materials.[1] H. Takahara, A. Kojyo, K. Kodama, T. Nakamura, K. Shono, Y. Kobayashi, M. Shikano, and H. Kobayashi, J. Anal. At. Spectrom., 29, 95–104 (2014). Figure 1

Method of arc activation of the base at increasing the distance plasma spraying

Purpose. To increase the efficiency of the plasma coating by developing a method of ion-arc activation of the base using an activating electrode, which leads to an increase in the adhesion strength of the coating due to the sputtering of surface oxides of the base.
 Research methods. Experimental and computational, mechanical tests, optical microscopy. The development of the method of ion-arc activation of the part base with an increase in the distance of coating deposition consists in application of an activating electrode located at the surface of the base to create an additional activating arc. The influence of the activating arc on bases for creating an additional activating arc. The influence of the activating arc on the adhesion strength of the coating is determined. The estimation of the current density of the activating arc for the sputtering of surface base oxides is carried out.
 Results. A method of arc activation of the base surface with an increase in the coating distance is found. It is shown that application of an activating arc of reverse polarity that burns between the additional electrode and the base leads to ion bombardment of the surface by sputtering surface oxides and the creation of microcraters on the base surface. As a result, the bond strength is doubled compared to the bond strength obtained without the use of ion-arc activation of the base. The calculations of the rate of cathodic sputtering of the surface oxides of the base are carried out and the minimum activation current density of the base is determined, which leads to the complete sputtering of a layer of oxides of a given thickness.
 Scientific novelty. It has been determined that, despite the rapid oxidation of the base under atmospheric conditions, application of the method of ion-arc cleaning of the surface during coating leads to a significant increase in the adhesion strength of the coating to the base.
 Practical value. The obtained results of increasing the adhesion strength rise the efficiency, the guaranteed service life of the plasma coating on the parts of machines and mechanisms

SPECTROSCOPIC STUDY OF RF MAGNETRON SPUTTERING PLASMA FOR DEPOSITION TI6AL4V THIN FILM

In this work, RF magnetron sputtering plasma for the deposition of Ti6Al4V thin film has been investigated by using optical emission spectroscopy at argon working pressure of 5×10-3 mbar. The emission lines intensity of the plasma were measured using a spectrometer, and the identify peaks within the selective range of patterns and matched with the standard data from the NIST website to measure the plasma parameters. Since the sputtering power plays an important role to the growth of thin film, so the effect of sputtering power of 50, 75, 100, 125 and 150Watt has been studied on produced plasma parameters. The size of Ti6Al4V sputtering target was 50mm in diameter. The argon gas flow was 40 s ccm. One can observe that the lines intensities increased with increasing the sputtering power. The plasma temperature increases from 1.86 to 2.15 eV, while its density increased from 2.69 ×1018 to 2.94 ×1018 cm-3with increasing the rf power from 50 to 150 W, which effect on sputtering rate.

Highly conductive and adhesive ternary Cu–Cr–Zr alloy electrode for flexible optoelectronic applications

In this study, high-performance ternary Cu-0.13 wt% Cr-0.04 wt% Zr (Cu–Cr–Zr) alloy films on flexible polyimide (PI) substrate were investigated for the metallization of flexible thin-film transistor. The optimized Cu–Cr–Zr film was endowed excellent electrical resistivity (21.7 mΩ μm) and adhesion strength (5 B). The results showed that the sputtering rate increased with the increase of the sputtering power and pressure, and the adhesion strength tended to increase while the resistivity decreased with the rise of annealing temperature. X-ray diffraction (XRD) analysis showed that the copper grain size increased significantly as the rise of annealing temperature, which indicates the attenuation of the grain boundary scattering and accounts for the decrease of the resistivity. Compared with the glass substrate, lower resistance was achieved on PI substrate, which is related to the surface morphology . The smoothness and adhesion of the Cu–Cr–Zr film were improved more distinctly on the PI substrate can be attributed to more low interfacial energy sites of PI. Further mechanical bending test demonstrated that the robust Cu–Cr–Zr film has good stability and durability without significant deterioration after 50 k times bending. • Discusses changes in the properties of Cu–Cr–Zr thin film under different conditions. • The conductivity, smoothness and adhesion of film areexcellent on the PI substrate. • Obtained the conditions for the optimal resistivity and adhesion strength. • Analyze the micro mechanism of the thin film performance change in depth.

Influence of surface structure on D retention and erosion behaviours of RAFM steel with D-plasma exposure

As the first wall candidate material in the future fusion device, Reduced Activation Ferritic/Martensitic (RAFM) steel represented by CLF-1 steel was further investigated on the deuterium (D) erosion and retention behaviours. The influences of the surface conditions, including surface morphology, W-enriched structure and the original surface roughness, of the surface conditions including the sample temperature, W-enriched structure and the original surface roughness are mainly discussed. The results showed that with the increase of the sample temperature of CLF-1 steel during D-plasma exposure, the surface morphology changed obviously, and the grooves/pits formed by the erosion on the sample surface are deepened and the boundary becomes obvious. Then, the granular nanostructures appeared at the erosion edges and covered the grooves, eventually forming the nanoclusters structure on the surface. At the same time, TEM results showed that the thickness and content of W atoms on the surface increased. Under the combined action of the above surface conditions, both the sputtering rate and total D retention amount of CLF-1 steel decrease. Under the current experimental parameters, with the increase of the initial surface roughness, the sputtering morphology and the surface roughness of CLF-1 steel changed to different degrees after erosion of D, which eventually led to the slightly increase of the sputtering rate. The effect of incident D-plasma angle on the sputtering and redeposition behaviour of the material may explain this phenomenon. Besides, both the specific surface area of the contact plasma and the erosion behaviour of the material by D-plasma increased with the original surface roughness. The D releasing peak, thermal desorption temperature and total D retention amount of CLF-1 steel samples decrease with the original roughness of CLF-1 steel, which is mainly caused by the increase of D diffusion on the surface. At present, it can be found that the W-enriched surface behaviour induced by D-plasma exposure as well as the change of roughness and morphology lead to the decrease of the sputtering rate of RAFM steel with fluence, energy and sample temperature.

The Use of Ion Milling for Surface Preparation for EBSD Analysis.

An electron backscattered diffraction (EBSD) method provides information about the crystallographic structure of materials. However, a surface subjected to analysis needs to be well-prepared. This usually requires following a time-consuming procedure of mechanical polishing. The alternative methods of surface preparation for EBSD are performed via electropolishing or focus ion beam (FIB). In the present study, plasma etching using a glow discharge optical emission spectrometer (GD-OES) was applied for surface preparation for EBSD analysis. The obtained results revealed that plasma etching through GD-OES can be successfully used for surface preparation for EBSD analysis. However, it was also found that the plasma etching is sensitive for the alloy microstructure, i.e., the presence of intermetallic phases and precipitates such as carbides possess a different sputtering rate, resulting in non-uniform plasma etching. Preparation of the cross-section of oxidized CM247 revealed a similar problem with non-uniformity of plasma etching. The carbides and oxide scale possess a lower sputtering rate than the metallic matrix, which caused formation of relief. Based on obtained results, possible resolutions to suppress the effect of different sputtering rates are proposed.

Deep depth profiling using gas cluster secondary ion mass spectrometry: Micrometer topography development and effects on depth resolution.

Secondary ion mass spectrometry using the argon cluster primary ion beam enables molecular compositional depth profiling of organic thin films with minimal loss of chemical information or changes in sputter rate. However, for depth profiles of thicker organic films (> 10 μm of sputtered depth) we have observed the rapid formation of micron-scale topography in the shape of pillars that significantly affect both the linearity of the sputter yield and depth resolution. To minimize distortions in the 3D reconstruction of the sample due to this topography, a step-wise, staggered sample rotation was employed. By using polymer spheres embedded in an organic film, it was possible to measure the depth resolution at the film-sphere interface as a function of sputtered depth and observe when possible distortions in the 3D image occurred. In this way, it was possible to quantitatively measure the effect of micron-scale topography and sample rotation on the quality of the depth profile.

Epitaxial Growth of SrMnO3 Films on SrTiO3 Substrates by Off-Axis Angle Radio Frequency Magnetron Sputtering

ABSTRACTIn this study, high-quality SrMnO3 (001) film was grown on a SrTiO3(001) substrate using a 4 N purity target by 90° off-axis RF magnetron sputtering. In this study, the influence of the plasma center and surrounding positions on the growth of the SrMnO3 film was investigated under different sputtering temperatures and working pressure conditions. The results revealed that the SrMnO3 film exhibited the best crystallinity at the sputtering center under a high working pressure (135 mTorr), high substrate temperature (750 °C), and Ar to O ratio of 1:1. After investigating the relationship between the growth rate and the working pressure through the Alpha step, the film was grown at a lower sputtering rate of 2 nm/min. X-ray diffraction confirmed that the SrMnO3 film was epitaxially grown on the SrTiO3 substrate with an orientation relationship of SrMnO3(001)//SrTiO3(001). The growth state of SrMnO3 on the crystal SrTiO3 substrate was investigated by scanning electron microscopy (SEM); the results revealed that the surface was smooth and compact. In addition, the atomic force microscopy results were consistent with the SEM result; the results revealed that the surface of the film was atomically flat, and the atomic level flatness was 0.906 nm. Furthermore, the contact angle measurement results revealed that the film and substrate surface energy were almost similar and exhibited similar adhesion and internal stress. In addition, energy-dispersive X-ray spectroscopy analysis revealed that the atomic composition ratio in the high-temperature sputtered SrMnO3 film was consistent with the stoichiometric ratio of SrMnO3. The scope and results of this study will lay a foundation on the further research of the performance of SrMnO3 film.

Depth correction of 3D NanoSIMS images using secondary electron pixel intensities.

Strategies that do not require additional characterization to be performed on the sample or the collection of additional secondary ion signals are needed to depth correct 3D SIMS images of cells. Here, we develop a depth correction strategy that uses the pixel intensities in the secondary electron images acquired during negative-ion NanoSIMS depth profiling to reconstruct the sample morphology. This morphology reconstruction was then used to depth correct the 3D SIMS images that show the components of interest in the sample. As a proof of concept, we applied this approach to NanoSIMS depth profiling data that show the 15N-enrichment and 18O-enrichment from 15N-sphingolipids and 18O-cholesterol, respectively, within a metabolically labeled Madin-Darby canine kidney cell. Comparison of the cell morphology reconstruction to the secondary electron images collected with the NanoSIMS revealed that the assumption of a constant sputter rate produced small inaccuracies in sample morphology after approximately 0.66 μm of material was sputtered from the cell. Nonetheless, the resulting 3D renderings of the lipid-specific isotope enrichments better matched the shapes and positions of the subcellular compartments that contained 15N-sphingolipids and 18O-cholesterol than the uncorrected 3D SIMS images. This depth correction of the 3D SIMS images also facilitated the detection of spherical cholesterol-rich compartments that were surrounded by membranes containing cholesterol and sphingolipids. Thus, we expect this approach will facilitate identifying the subcellular structures that are enriched with biomolecules of interest in 3D SIMS images while eliminating the need for correlated analyses or additional secondary ion signals for the depth correction of 3D NanoSIMS images.

Progress of Microstructure and Texture of High Purity Tantalum Sputtering Target

In recent years, the IC (integrated circuit) industry has developed rapidly and the chip process technology has developed in the direction of higher density. Because of its good chemical stability, tantalum is used as a sputtering coating material for the diffusion barrier in the copper interconnect process. The uniform microstructure of the tantalum target directly affects the sputtering performance. The fabrication of high-quality thin films requires the tantalum target to have fine and uniform crystal grains and random grain orientation distribution. However, due to the characteristics of tantalum, it is easy to form a microstructure with {100} (<100>//ND) orientation on the surface and {111} (<111>//ND) orientation on the core during cold working. During the fabrication of thin films, the sputtering rate varies with the thickness of the target, which affects the sputtering stability. To provide ideas for improving the uniformity of the microstructure of the tantalum target, this article reviews the preparation processes that affect the grain orientation and size of the high-purity tantalum target, including forging methods, rolling methods, recrystallization annealing, etc., analyze the law of texture evolution of tantalum and introduction the research status of cold working and recrystallization.

Effect of chromium percentage doping on the optical, structural, morphological and electrical properties of ZnS:Cr thin films

Zinc sulfide (ZnS) and chromium-doped zinc sulfide (ZnS:Cr) thin films were grown on glass and Si substrates by cathodic radio-frequency (RF) sputtering. The deposition time and RF power were fixed respectively at 90 min and 200 W while chromium content was varied between 3 and 7%. The effect of Cr percentage on the structural, morphological and optical properties of the deposited thin films have been studied. X-ray diffraction analysis indicated that all the sputtered ZnS films were monophasic with a preferred growth orientation along the (111) plane of the zinc-blend (ZB) phase. The Cr-doped films, on the other hand, showed the (111), (2 2 2), and (311) peaks of the same phase that was confirmed by TEM . The crystallite size was about 17.75 nm for undoped ZnS films for RF power of 200 W and increased from 16.3 nm to 25.5 nm for ZnS:Cr. The strain was shown to decrease from 2.2 × 10 −3 to1.45 × 10 −3 . The optical properties (mainly the thicknesses, refractive index , absorption coefficient and optical band gap) were determined from optical transmission measurements in the ultraviolet–visible-near-Infrared wavelength range. Scanning electron microscopy observations revealed smooth film surfaces. Energy Dispersive Spectroscopy (EDS) revealed that the chromium sputtering rate is smaller than the Zn and S ones. UV–Visible transmission measurements revealed an average transmittance on the order 70% for the ZnS films while that of the ZnS:Cr was less than 60% in the visible wavelength region. Moreover, it was observed that the optical band-gap of the ZnS films is 3.72 eV, and slightly decreases from 3.68 to 3.44 eV as the chromium percentage increases, while the films thickness increased. The electrical resistivity of thin films has decreased from 5.2 × 10 5 Ω cm to 1.1 × 10 5 Ω cm as the chromium percentage increases from 3 to 7%. • XRD patterns showed that the particles crystallized in cubic lattice. • The crystallite size was observed to increase with increasing the chromium percentage. • It is observed that the energy band gap decreases from 3.7eV to 3.44 eV. • The resistivity decrease as Cr contents increasing.

Quantification of High Resolution Pulsed RF GDOES Depth Profiles for Mo/B4C/Si Nano-Multilayers

Pulsed-radio frequency glow discharge optical emission spectrometry (Pulsed-RF-GDOES) has exhibited great potential for high resolution (HR) depth profiling. In this paper, the measured GDOES depth profile of 60 × Mo (3 nm)/B4C (0.3 nm)/Si (3.7 nm) was quantified by employing the newly extended Mixing-Roughness-Information depth (MRI) model. We evaluated the influences of the thickness and sputtering rate on the depth profile of very thin layers. We demonstrated that a method using the full width at half maximum (FWHM) value of the measured time-concentration profile for determining the sputtering rate and the corresponding thickness was not reliable if preferential sputtering took place upon depth profiling.

A linked-scale coupled model of mass erosion and redistribution in plasma-exposed micro-foam surfaces

Surface evolution due to exposure to harsh environments is of importance in many scientific and technological applications. In plasma-exposed materials, the surface receives charged particles from the plasma, leading to a series of processes that drive the system far from equilibrium and may lead to the severe deterioration of the surface properties. Although surface morphological changes are driven by atomic collisions taking place over picoseconds and nanometers, these processes result in mass loss and redistribution of matter over much larger length and time scales. This necessitates a multi-scale approach capable of capturing the range of processes linking primary atomic collision events with engineering-level surface geometry changes. In this paper, we develop a computational model to simulate the morphological evolution and effective erosion rate of micro-architected tungsten foams during low-energy plasma ion bombardment. The model acts on several length scales, with the energy and angular dependence of the sputtering yield of flat tungsten surfaces determined using the SRIM code based on the binary collision approximation. This information is introduced into a low-fluence, short-term Monte Carlo raytracing model, and further into a high-fluence, long-term particle transport model. In the latter, material particles representing billions of atoms are described in a digitized 3-D representation of the foam structure from X-ray tomography data, and are sputtered off and redeposited using the atomistic information. We show that the redeposition of sputtered atoms leads to partial self-healing in the bottom layers with a sharp reduction in the sputtering coefficient of low density foams, roughly 25% of the solid W value. This is in qualitative agreement with recent experiments on low porosity W structures. At high fluence, the foam structure degrades considerably as there are fewer ligaments available to recapture sputtered atoms and, consequently, the sputtering rate increases again.

Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Sputtering rate of lead, tin and germanium tellurides with low energy argon ions

Sputtering of PbTe, SnTe, and GeTe crystal samples by low-energy Ar+ ions are investigated, and the sputtering rate vsp of the studied compounds, as well as its dependence on both the composition of crystal matrix and the sputtering energy are determined. It is found that under the same conditions the sputtering rate in the sequence of GeTe-SnTe-PbTe telluride compounds increases when their average atomic weight increases. This phenomenon is explained by changes in the surface binding energy of metal atoms in lead, tin and germanium tellurides. It is shown that for all compounds the sputtering rate also increases with the increase in the sputtering energy. In the energy range from 160 to 550 eV,this increase is almost linear. The coefficients of change in the sputtering rate with energy dvsp/dE are calculated. The surface density of Ar+ ion-induced structures and the relative area of the sputtered surface covered by these structures are determined for the natural lateral surfaces of a PbTe crystal grown from melt by the Bridgman method as a function of sputtering energy. It is shown that both studied parameters decrease exponentially with increasing the sputtering energy.

Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy

Historically, dynamic secondary ion mass spectroscopy (D-SIMS) has been used to quantitatively monitor the depth distribution of species present in low concentrations in samples/devices. We are not aware of any manuscript that describes the use of time of flight–secondary ion mass spectroscopy (ToF-SIMS) to perform quantitative analysis of aluminum present at low concentrations in silicon carbide (SiC) wafer substrates. In this paper, we will show that ToF-SIMS is able to replicate D-SIMS analysis. However, analysis at the lowest concentrations requires the collection of more spectral images at each depth. Tables of sputtering rates and sputtering yields, in addition to relative sensitivity factors are provided. We also highlight the benefits of ToF-SIMS analysis.

The optical and electrical properties of amorphous gallium/titanium co-doped indium oxide films based on oxygen flow dependence

Amorphous gallium/titanium (Ga,Ti) co-doped indium oxide (In2O3) (GTiIO) films present significant potential as transparent conducting electrodes for use in flexible electronic devices. Amorphous GTiIO films were grown on silicon and glass substrates using linear-facing target sputtering and various oxygen flow rates. Transmittance was as high as 80% in the visible range for O2 flow rates of 0.3, 0.7, and 1.0 SCCM. The lowest resistivity was obtained at f(O2) = 0.3 SCCM with 0.47 mΩ cm. Dielectric functions were determined, and optical gap energies were estimated as close to 3.4 eV using a Tauc formula. We show that Drude tail amplitude is proportional to the carrier density. An electronic transition was found at 2.7 eV from the optical spectra of the thin film at f(O2) = 0 SCCM; this transition was designated to be an inter-conduction band transition from the first to the second conduction band. Using Hall parameters and Drude tail amplitudes in dielectric functions, the effective mass of GTiIO films was determined as 0.398 m0 at f(O2) = 0.3 SCCM.

Grid-Assisted Co-Sputtering Method: Background, Advancement, and Prospect

In this paper, the incorporation of auxiliary grids/electrodes into the design of the sputtering method is scrutinized by studying the impact of factors such as grid size, grid position, grid bias voltage, electrode sheath design, substrate bias voltage, reactive gas partial pressure, and magnetic trap configuration on the discharge condition and thin-film growth. In this regard, utilizing the updated Berg model for reactive sputtering, the authors obtained a formulation for the reactive grid-assisted sputtering. By the newly-developed formulation, the sputtering rate and the reactive gas partial pressure were simulated as a function of the reactive gas flow rate for various grid-to-target distances, argon partial pressures (0.67, 1.6, and 3.6 Pa), and discharge current densities (0.01, 0.015, and 0.02 A/cm2). According to the computation results, with a grid being utilized, the width of the hysteresis loops can be modified in a broader range by changing either the grid-to-target distance, the argon partial pressure, or the discharge current, resulting in better control over the deposition process. Moreover, the novel configuration of anode-spot-assisted sputtering was proposed to significantly ionize sputtered/neutral atoms near the substrate and to simultaneously deposit sputtered species and products produced as the direct result of introducing dust into the dense plasma. Finally, diverse configurations of the grid-assisted co-sputtering method were introduced for two prime purposes: deposition of composite films in any desired ratios of constituents without significantly changing the other co-sputtering parameters, and favorable alternation of a hysteresis loop for one of the guns at shared gas flow rates.

Effects of sputtering gas on the microstructure of Ir thin films deposited by HiPIMS and pulsed DC sputtering

Abstract Due to its chemical inertness, hardness and thermal stability Ir finds a lot of industrial applications. One of the most important field is it use as a substrate material for the monocrystalline diamond heteroepitaxy. However, due to the extreme iridium price, as well as its high melting point, production of bulk iridium substrates is economically unfavorable. In this article we are focused on the Ir thin films production by pulsed DC and HiPIMS sputtering and study the effect of Ar and He working gases on the structure of the growing films. We have found that a sputtering rate reduction given by using of HiPIMS discharge in He is a one of the key factors of the intensified influence of the seed substrate and a growth of thermodynamically unfavorable iridium orientation. This combination can be used as a possible low-energy ion-assisted method for epitaxial growth of materials.