Abstract
Abstract Due to its chemical inertness, hardness and thermal stability Ir finds a lot of industrial applications. One of the most important field is it use as a substrate material for the monocrystalline diamond heteroepitaxy. However, due to the extreme iridium price, as well as its high melting point, production of bulk iridium substrates is economically unfavorable. In this article we are focused on the Ir thin films production by pulsed DC and HiPIMS sputtering and study the effect of Ar and He working gases on the structure of the growing films. We have found that a sputtering rate reduction given by using of HiPIMS discharge in He is a one of the key factors of the intensified influence of the seed substrate and a growth of thermodynamically unfavorable iridium orientation. This combination can be used as a possible low-energy ion-assisted method for epitaxial growth of materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
