Sputtering Process Research Articles

Efficiency Improvement on Indium Tin Oxide Films for Dye-Sensitized Solar Cell Using Oxygen Plasma by Bias-Magnetron RF Sputtering Process

Dye-sensitized solar cells (DSSCs) are among the most widely studied thin-film solar cells because of their cost-effectiveness, low toxicity, and simple fabrication method. However, there is still much scope for replacing current DSSC materials due to their high cost, low volume, and lack of long-term stability. Accordingly, indium tin oxide (ITO)-nanorod films were fabricated by electron (E)-beam evaporation using the glancing angle deposition method in this study. Then, the ITO-nanorod was treated with oxygen plasma via a bias-magnetron radio-frequency (RF) sputtering process to improve the efficiency of DSSCs under a varying gas flow rate of 20, 40, 60, 80, and 100 sccm. The field emission scanning electron microscopy (FE-SEM) investigation of the ITO film structure revealed that the obtained nanorod structures have slightly different diameters. At the same time, an increase in the oxygen flow rate resulted in a rougher film surface structure. In this, the lower sheet resistance was received because of rougher morphology. When comparing the DSSCs efficiency (η) test results, we found that at a gas flow rate of 100 sccm, the highest efficiency value showed 9.5%. On the other hand, the ITO-nanorod without plasma treatment exhibited the lowest η. Hence, plasma technology can be practically applied to improve the η of DSSC devices. This study will be a prototype of a highly advanced solar cell manufacturing method for the solar cell industry.

Water Vapor-Impermeable AlON/HfOx Bilayer Films Deposited by Hybrid High-Power Impulse Magnetron Sputtering/Radio-Frequency Magnetron Sputtering Processes

Water vapor-impermeable AlON/HfOx bilayer films were constructed through a hybrid high-power impulse magnetron sputtering (HiPIMS) and radio-frequency magnetron sputtering process (RFMS), applied as an encapsulation of flexible electronics such as organic photovoltaics. The deposition of monolithic and amorphous AlON films through HiPIMS was investigated by varying the duty cycles from 5% to 20%. At an accelerated test condition, 60 °C, and 90% relative humidity, a 100 nm thick monolithic AlON film prepared using a duty cycle of 20% exhibited a low water vapor transmission rate (WVTR) of 0.0903 g m−2 day−1 after testing for 336 h. Furthermore, after introducing a nanocrystalline HfOx film through RFMS, a 214 nm thick AlON/HfOx bilayer film reached the lowest WVTR of 0.0126 g m−2 day−1.

Semiconductor WO3 thin films deposited by pulsed reactive magnetron sputtering

A pulsed reactive magnetron sputtering system with a tungsten target and a gas mixture of argon and oxygen was investigated as a source for the deposition of semiconductor WO3 thin films on soda lime glass substrates and on the glass with transparent conductive SnO2:F (FTO) electrode. The reactive sputtering process was performed in HiPIMS mode with low pulse repetition frequency fp ≈ 50–100 Hz and short pulse duration in HiPIMS discharge Ton = 100 μs. The second mode investigated was the mid-frequency (MF) magnetron discharge with pulse frequency fp = 40 kHz and pulse length Ton = 15 μs. The plasma parameters were investigated for both HiPIMS and MF modes using the planar RF probe operating at the frequency fprobe = 350 kHz and the grid QCM with biased collector electrode. Ion density ni and tail electron temperature (Te) were determined in both pulsed reactive magnetron sputtering discharge modes with time resolution. The maximum value ni ≈ 5 · 1017 m−3 was found in the reactive HiPIMS mode, and the maximum value ni ≈ 7 · 1016 m−3 was found in the reactive MF (40 kHz) mode. The degree of ionization of sputtered particles in reactive HiPIMS was determined for different values of (QO2) and was found to be in the range of ri ≈ 0.1–0.3. The deposition rate determined by QCM in reactive HiPIMS was practically independent on (QO2), but in the case of reactive MF, the measured deposition rate decreased significantly with increasing (QO2). The WO3 films deposited in both modes have a predominantly monoclinic crystal structure. The light and dark conductivity and the light/dark conductivity ratio (Ld) were measured under dark conditions and UV light illumination. At higher (QO2), the maximum value of Ld ≈ 300 was found for MF deposited WO3 and the maximum value of Ld ≈ 30 was found for HiPIMS deposited WO3. The photoelectrochemical measurement of WO3 deposited on FTO electrodes confirmed the n-type conductivity, and these films functioned as photoanodes in photoelectrochemical cells. MF deposited WO3 films systematically exhibited slightly higher photocurrents than HiPIMS deposited WO3. It was shown that these optimum photocurrents for HiPIMS and MF were found at QO2 ≈ 80 sccm and could not be improved by further increasing of (QO2).

Achieving nearly 70 cm2/V·s field-effect mobility in single amorphous Ga-In-ZnO thin-film transistors deposited by sputtering process via intermediate patterned metal layer insertion

In this study, we introduce a novel method for enhancing the mobility of amorphous Ga-In-Zn-O (a-GIZO) thin-film transistors (TFTs) by incorporating a patterned metal layer within the a-GIZO single channel. The patterned metal layer comprises either a single layer of aluminum or a combination of aluminum and gold as the bottom and top layers, respectively. TFTs with a single aluminum layer achieved a field-effect mobility of 40.15 cm2/V∙s, significantly higher than the 16.22 cm2/V∙s of standard a-GIZO TFTs. This enhancement is attributed to aluminum’s low Gibbs free energy, which increases oxygen vacancies in the a-GIZO layer and thus improves carrier mobility. Furthermore, when a patterned dual-metal layer consisting of aluminum as the bottom layer and gold as the top layer is used, a field-effect mobility of 69.46 cm2/V∙s is achieved. This improvement is attributed to the low electrical resistivity of gold, which prevents oxidation between the upper gold layer and the a-GIZO layer deposited by sputtering process. Furthermore, this mechanism facilitates the enhancement of the reaction with a lower a-GIZO layer. The unique characteristics of gold prevent oxidation between the a-GIZO and gold interface, thereby promoting favorable interactions between Al and the underlying a-GIZO layer. Our findings demonstrate that strategically inserted patterned metal layers can significantly boost mobility of a single a-GIZO TFT while maintaining device stability, offering a promising approach for advanced display technologies.

Conventional epitaxy of NiO thin films on muscovite mica and c-Al2O3 substrates

Fiber-textured and epitaxial NiO thin films were deposited on Si(100), c-Al2O3, and muscovite mica(001) substrates using reactive magnetron sputtering at substrate temperatures of 300°C and 400°C, to investigate the effect of film thickness and substrate temperature on epitaxial growth of NiO films. The as-deposited films exhibited a face-centered cubic structure with a larger lattice constant, attributed to strain induced during the sputtering process. With an increase in substrate temperature to 400°C, the d-spacing decreased due to strain release, approaching the NiO bulk value for the thickest film. The NiO film grown on Si(100) displayed fiber texture. On c-plane sapphire, NiO thin films exhibited twin domains and three-fold symmetry, consistent with expected crystallographic orientation relationship for NaCl-structured materials on sapphire:(111)NiO∥(0001)Al2O3and[01¯1]NiO∥[1¯010]Al2O3, [011¯]NiO∥[101¯0]Al2O3. On muscovite mica(001) substrates, the observed epitaxial shows that the mechanism is conventional epitaxy, rather than van der Waals epitaxy, consistent with the epitaxial growth of the non-layered non-van-der-Waals compound NiO. The epitaxial relationship was identified as of (111)NiO∥(001)Mica and [01¯1]NiO∥[010]Mica, [011¯]NiO∥[01¯0]Mica.

Improve wear resistance of C/C composites as artificial bone using diamond-like carbon coatings

In this study, diamond-like carbon (DLC) coatings and silicon-doped diamond-like (Si-DLC) coatings were prepared on the surface of C/C composites by a combination of plasma-enhanced chemical vapor deposition (PECVD) and magnetron sputtering processes. The film composition, microstructure and atomic bond structure were characterized using X-ray photoelectron spectroscopy, field-emission scanning electron microscopy and Raman spectroscopy. The mechanical properties and friction behavior related to the Si element were investigated using nanoindentation and HT-1000 high temperature friction and wear tester. The biocompatibility of the materials was also evaluated by the MG-63 proliferation test. The results indicate that Si elements were successfully incorporated into the DLC films, bonding with C and O atoms, which altered the thermal stability and microstructure of the coatings, reduced the internal stress of the films, and increased disorder. Compared to C/C composites, all coated layers exhibited lower coefficients of friction, with the formation of transfer layers and graphitization induced by friction contributing to the excellent tribological performance. Both coatings showed no cytotoxicity and demonstrated good biocompatibility. Both coatings are effective in reducing wear and chip losses in C/C composites when used as artificial bones. This work suggests that diamond-like carbon coated C/C composites can be excellent structural materials for human body in biomedical science.

Effects of grain size, dislocation density, and texture type on the etching behavior of Cu target in magnetron sputtering process

Abstract Copper thin film is commonly applied in the microelectronics and battery industries, and environmentally friendly magnetron sputtering process is one of the main coating processes. The effects of grain size, dislocation density, and texture type of Cu target on sputtering efficiency were researched in this work. High-purity copper cast ingots were rolled into plates. Pieces were then cut from different surfaces of the plates and assembled into the targets named as Target 1, Target 2, and Target 3 for magnetron sputtering. To investigate the etching behavior of the three targets, EBSD technology was utilized for analysis, and the micro-morphologies of the etching grooves were observed using SEM. After the sputtering process, the weight loss rate and etching depth of the various targets were measured to compare the respective sputtering efficiency. Target 1 exhibited the highest sputtering weight loss rate at any time period compared to Target 2 and Target 3, and reached its maximum depth after every 15 minutes of sputtering. In the first 45 minutes, the etching depth of Target 2 was slightly greater than that of Target 3. While the etching depth of Target 3 increased significantly in the last 15 minutes compared to that of Target 2. The most significant factor influencing the sputtering efficiency of the target material was grain size, with finer grains leading to higher sputtering efficiency. The dislocation density had a greater impact in the first 30 minutes, but the texture type became more important as the sputtering process continued.

Control of ferroelectricity in Ta-doped HfO2 and its non-zero-crossing current–voltage hysteresis behavior

Hafnium oxide (HfO2)-based ferroelectrics are being explored as potential candidates for ferroelectric memory devices due to their highly compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Enhancing the remanent polarization and investigating the underlying mechanism are crucial tasks. In the present study, tantalum (Ta) was introduced as a dopant to induce ferroelectric properties in HfO2, a large portion of orthorhombic phase was recognized in the as-grown Ta:HfO2 without further thermal treatment. The remanent polarization of Ta:HfO2 thin films can be optimized by adjusting the oxygen flow rates during the sputtering process. The influencing factors for enhanced ferroelectric performance include the control of Ta concentration, its valence state, and the presence of singly ionized oxygen vacancies, which are influenced by oxygen addition. Furthermore, the resistive switching behavior showing non-zero crossing current–voltage (I–V) hysteresis is associated with ferroelectricity and the presence of oxygen vacancies. A model has been proposed to explain the ferroelectric resistive switching with non-zero crossing I–V characteristics by considering the role of oxygen vacancies and polarization effects. This model suggests that the oxygen vacancies at the surface layer, along with ferroelectric polarization, play a crucial role in electron transport.

Effects of Hydrogen Dissociation During Gas Flooding on Formation of Metal Hydride Cluster Ions in Secondary Ion Mass Spectrometry.

The application of hydrogen flooding was recently shown to be a simple and effective approach for improved layer differentiation and interface determination during secondary ion mass spectrometry (SIMS) depth profiling of thin films, as well as an approach with potential in the field of quantitative SIMS analyses. To study the effects of hydrogen further, flooding of H2 molecules was compared to reactions with atomic H on samples of pure metals and their alloys. H2 was introduced into the analytical chamber via a capillary, which was heated to approximately 2200 K to achieve dissociation. Dissociation of H2 up to 30% resulted in a significant increase in the intensity of the metal hydride cluster secondary ions originating from the metallic samples. Comparison of the time scales of possible processes provided insight into the mechanism of hydride cluster secondary ion formation. Cluster ions presumably form during the recombination of the atoms and molecules from the sample and atoms and molecules adsorbed from the gas. This process occurs on the surface or just above it during the sputtering process. These findings coincide with those of previous mechanistic and computational studies.

Evolution of TiAlSi thin film coatings under varying target power in DC magnetron sputtering

This study, for the first time, presents the growth, nucleation, and characteristics of TiAlSi thin films sputtered from a partially sintered Ti30Al16Si10 (at. %) composite target under controlled conditions of target power. The TiAlSi thin films were grown on soda-lime glass substrates through Direct Current (DC) sputtering at varying levels of the target power: 73.2 W, 151.2 W, and 269.5 W. The other deposition parameters: the deposition temperature, time, argon mass flow rate, substrate rotation, and deposition pressure, were kept constant at 23 °C, 150 min, 25 sccm, 5 rpm, and 10−3 mbar, respectively. The pre-sputter power, argon flow rate, and time were also kept constant at 73.2 W, 20 sccm, and 5 min, respectively. The physical properties, microstructure, crystal structure, topography, and mechanical properties of the thin film coatings were analysed. The thickness and rate of deposition of the TiAlSi thin films increased with an increase in the target power (73.2 W – 269.5 W) from 414.6 nm and 0.046 nm/s to 1358.8 nm and 0.151 nm/s, respectively. The chemical composition of all the thin films remained constant, with the formation of a uniform TiAlSi alloy with no segregation of elements. However, a thin (wetting) interlayer consisting of Si and O elements was observed between the TiAlSi layer and the glass substrate. Further, the structure sizes and roughness values of the TiAlSi thin films increased with an increase in the target power, with a maximum of 75.4 nm for the size and 4.78 nm for the RMS roughness of thin films deposited at the maximum target power (269.5 W). Lastly, mechanical analysis of the TiAlSi thin films depicted an increase in the hardness as the target power increased, with the highest hardness at maximum power (269.5 W) obtained as 4.76 GPa. Despite having the lowest elastic modulus (50.5 GPa), the coating deposited at the highest power exhibited the highest plasticity index (H/E) and plastic deformation factor (H3/E2) of 0.094 and 0.042 GPa, respectively, which indicated the high resistance to abrasive wear, cracking, and deformation, compared to thin films deposited at the lowest target power (H/E = 0.066 and H3/E2 = 0.015 GPa). This study demonstrates that target power is a significant factor in determining the growth of TiAlSi thin films during the sputtering process and can be used for better control of their physical, structural, and mechanical properties.

Investigating Gold Deposition with High-Power Impulse Magnetron Sputtering and Direct-Current Magnetron Sputtering on Polystyrene, Poly-4-vinylpyridine, and Polystyrene Sulfonic Acid.

Fabricating thin metal layers and particularly observing their formation process in situ is of fundamental interest to tailor the quality of such a layer on polymers for organic electronics. In particular, the process of high power impulse magnetron sputtering (HiPIMS) for establishing thin metal layers has sparsely been explored in situ. Hence, in this study, we investigate the growth of thin gold (Au) layers with HiPIMS and compare their growth with thin Au layers prepared by conventional direct current magnetron sputtering (dcMS). Au was chosen because it is an inert noble metal and has a high scattering length density. This allows us to track the growing nanostructures via grazing incidence scattering. In particular, Au deposition on the polymer polystyrene (PS) with the respective structural analogues poly-4-vinlypyridine (P4VP) and polystyrene sulfonic acid (PSS) is studied. Additionally, the nanostructured layers on these different polymer films are further probed by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), X-ray reflectometry (XRR), and four-point probe measurements. We report that HiPIMS leads to smaller island-to-island distances throughout the whole sputter process. Moreover, an increased cluster density and an earlier percolation threshold are achieved compared to dcMS. Additionally, in the early stage, we observe a significant increase in coverage by HiPIMS, which is favorable for the improvement of the polymer-metal interface.

Development of Peptide Identification System for ToF-SIMS Spectra Using Supervised Machine Learning.

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) data interpretation for organic materials is complicated because of various fragment ions produced from each molecule and the overlapping of certain mass peaks from different molecules. Fragmentation mechanisms in SIMS are complex because different sputtering and ionization processes can simultaneously occur. Therefore, a prediction system that can identify materials in a sample is required. A novel prediction system for peptides based on ToF-SIMS and amino-acid-based teaching information (labels) for supervised machine learning was developed. To develop the prediction system for general organic materials, the annotation of materials is crucial to creating effective labels for supervised learning. Peptides are composed of 20 amino acid residues, which can be used as labels. We previously developed a peptide prediction system using Random Forest, a supervised machine-learning method. However, only the amino acids contained in the target peptide were predicted, and the amino acid sequence was unable to be assumed. In this study, the amino acid sequence of the test peptide was determined by adding the information on two adjacent amino acids to the labels. Once the prediction system learned the target peptide spectra, the peptides in the newly obtained ToF-SIMS spectra could be identified. The new prediction system also provides useful information for the identification of unknown peptides. The prediction results indicate that two adjacent permutations of amino acids are effective pieces of teaching information for expressing the amino acid sequence of a peptide.

Controlling the digital-to-analog switching in HfO2-based memristors via modulating the oxide thickness

The HfO2-based memristors have been acknowledged as a highly potential candidate for nonvolatile memory and neuromorphic computing applications. However, the analog resistive switching behavior of the HfO2-based memristors still needs improvement. In this work, Cu/HfO2/Pd devices with different oxide layer thicknesses were prepared by the magnetron sputtering process. The resistance switching characteristics related to oxide layer thickness were explored, revealing significant differences in the forming, SET, and RESET characteristics depending on oxide thickness. The conduction mechanism of the Cu/HfO2/Pd memristors is mainly attributed to the space charge limited current (SCLC) model. Thinner devices tend to show a more abrupt SET behavior and larger SET voltage, while thicker devices exhibit more gradual SET behavior and a lower SET voltage. In addition, as the thickness of the oxide layer increases, the Cu/HfO2/Pd memristors transition from digital resistive switching to analog resistive switching. The formation and rupture of oxygen vacancy filaments are predominant in thicker device, and the shape of the conduction filaments has been proposed as responsible for the abrupt and gradual changes in resistive switching. This work demonstrates that the thickness of the oxide layer plays an important role in engineering digital logic and neuromorphic behavior in HfO2-based memristors.

Green Method of Doping Photochromic TiO2

The doping process is a unique method of changing the microstructure of a material, influencing its mechanical, thermal, and optical properties. Typically, the doping process is carried out via chemical reagents. In this work, we present a “green” method of doping photochromic TiO2 via low-temperature plasma. The doping agent was the electrode material that was sputtered during plasma burning. The process of electrode sputtering is confirmed by the emission spectroscopy data of the plasma zone and the mass loss of the electrodes. The doping process was confirmed by X-ray, Raman spectroscopy, and XPS analyses. The role of the dopant nature and the action of diaphragm discharge in improving the photochromic properties of titanium dioxide is considered.

A HYBRID MEREC-TOPSIS APPROACH FOR THE IMPROVEMENT OF PHYSICAL VAPOUR DEPOSITED TITANIUM CARBO-NITRIDE COATING

Titanium carbo-nitride (TiCN) comes under the metal nitride group which can provide a combined property of titanium carbide (TiC) and titanium nitride (TiN) coating. TiCN Coating possess an excellent mechanical and tribological, properties which leads its application in many industries particularly in the Automotive and aerospace industries. TiCN films can be very hard and strong based on the composition and synthesis process. Physical Vapor Deposition (PVD) technique is widely used for the preparation of thin film coating because of its ability to precisely control the composition and thickness of the coatings. The properties of the developed coating significantly affect by the PVD process parameters and their levels. Multi-Criteria Decision Making (MCDM) methods are widely used in many sectors for the selection of process parameters based upon some specific criteria. In the present work TiCN coatings were synthesized by using one of the most widely used PVD method called magnetron sputtering. L16 orthogonal array was used as a design of experiment for the experimental work by varying the sputtering process parameters like bias voltage, N2 flow rate and substrate to target distance. After the synthesis, the developed films were tested using atomic force microscopy (AFM), Scanning electron microscopy (SEM), and Nanoindentation. From the characterization three response parameters such as hardness (H), Modulus of elasticity (E) and surface roughness (Ra) of the coating has been considered. A hybrid method based on improved removal effects of criteria- technique for order performance by similarity to ideal solution (MEREC-TOPSIS) approach has been considered for the for the process parameters selection. The results have also been compared with other weight calculation techniques. In all the cases it is observed that experiment no 16 and 15 have got the 1st and second rank respectively. However, experiment no 1 is the last rank in all the cases. From the correlation analysis it is found a strong positive correlation between MEREC-TOPSIS and other methods. The method provides a significant advancement in the selection of optimal parameters, ensuring enhanced coating properties crucial for industrial applications.

Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors

p-Type tin(II) oxide (SnO (Sn2+)) formation using radiofrequency (RF) reactive magnetron sputtering and post-deposition annealing (PDA) processes was investigated. The as-grown SnOx film deposited from an SnOx (SnO:Sn = 60:40) target by RF sputtering at an oxygen partial pressure (PO2) of 0 Pa consisted of 2 % Sn (Sn0), 42 % Sn2+, and 56 % SnO2 (Sn4+). However, compared with the Sn2+ fraction observed after PDA under N2 and low-vacuum (∼1 Pa) conditions, that after PDA at 300 °C under high vacuum (< 5 × 10−4 Pa) (HVPDA) increased substantially to greater than 62 %. This result was attributed to the transformation from SnO2 to SnO during HVPDA. A staggered bottom-gate thin-film transistor with an SnO channel (10 nm), which was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively high on-current/off-current (Ion/Ioff) ratio of 5.1 × 104 and a hole field-effect mobility (µFE) of 1.8 cm2/(V·s).

High-Performing Flexible Mg3Bi2 Thin-Film Thermoelectrics.

With the advances in bulk Mg3Bi2, there is increasing interest in pursuing whether Mg3Bi2 can be fabricated into flexible thin films for wearable electronics to expand the practical applications. However, the development of fabrication processes for flexible Mg3Bi2 thin films and the effective enhancement of their thermoelectric performance remain underexplored. Here, magnetron sputtering and ex-situ annealing techniques is used to fabricate flexible Mg3Bi2 thermoelectric thin films with a power factor of up to 1.59 µW cm-1 K-2 at 60°C, ranking as the top value among all reported n-type Mg3Bi2 thin films. Extensive characterizations show that ex-situ annealing, and optimized sputtering processes allow precise control over film thickness. These techniques ensure high adhesion of the films to various substrates, resulting in excellent flexibility, with <10% performance degradation after 500 bending cycles with a radius of 5mm. Furthermore, for the first time, flexible thermoelectric devices are fabricated with both p-type and n-type Mg3Bi2 legs, which achieve an output power of 0.17 nW and a power density of 1.67 µW cm-2 at a very low temperature difference of 2.5°C, highlighting the practical application potential of the device.

Diffusion mechanisms and corrosion resistance of nanostructured ZrN-Cu coating obtained by hybrid HiPIMS-DCMS

Globalisation has brought numerous benefits regarding the cost-effective transportation of goods. Still, the shipping industry faces challenges such as corrosion, biofouling, and restrictions on heavy pollutant products used in paintings. This study proposes a solution using a multifunctional coating based on zirconium nitride and copper nano-structured coating, applying high-power impulse and direct current magnetron sputtering processes (i.e., HiPIMS and DCMS, respectively). The coating’s morphological, structural, and chemical features were analysed using advanced characterisation techniques (SEM, EDX, STEM, SAED and EELS). Potentiodynamic polarisation (PP) and Electrochemical Impedance Spectroscopy (EIS − up to 30 days) were employed to study the corrosion resistance in saline solution (3.5 wt% NaCl). Besides, activated ZrN-Cu exhibited a corrosion rate decrease from ∼ 354 x 10−4 to 52 x 10−4 mm/yr when compared to its inactivated counterpart. Besides, a ∼ 3.5-fold impedance increasing was exhibited by activated ZrN-Cu after 30 days of exposure to saline solution, meaning an increase in corrosion resistance compared to the non-activated ZrN-Cu. SEM micrographs revealed that the copper diffusion in ZrN-Cu can be provoked by a strong oxidising agent (NaOCl) or by an electrical potential. Based on the chartered evidence, a diffusion mechanism is proposed for the biocidal release (Cu) in the obtained ZrN-Cu films. The present study depicts a solution that offers a controlled biocide release and corrosion resistance, opening the possibility of its application in the maritime industry.

Sputtering of (111) highly-oriented nanotwinned Ag on polycrystalline Si3N4 substrates for high-power electronic packaging

Nanotwinned silver (NT-Ag) exhibits excellent mechanical and electrical properties, attributed to its high-density and (111) highly-oriented twinning structure in nanoscale. Therefore, it has recently drawn much attention in the field of electronic packaging, where it can be utilized as interconnection or metallization materials. However, it has been a critical challenge to fabricate the high-density and highly-oriented NT-Ag onto polycrystalline ceramic substrates, whose crystal structure does not support the epitaxial growth of NT-Ag films. In the current work, a high-density and highly-oriented NT-Ag film has been fabricated onto a polycrystalline ceramic substrate, i.e., NT-Ag on silicon nitride (NT-Ag@Si3N4), using the magnetron sputtering method. As results, a close-packed arrangement of high-density NT-Ag has been observed within columnar grains aligned along its growth direction, whereas the nanoindentation hardness of the NT-Ag film reached 1.82 GPa, with an electrical resistivity of 2.06 μΩ‧cm. Moreover, this study has discussed and explained the growth kinetics and mechanism of NT-Ag films, by controlling magnetron sputtering process parameters, such as sputtering power and argon flow rate. Additionally, the differences in the growth mechanism of NT-Ag on (100) Si and polycrystalline Si3N4 have also been investigated. With its superior material properties, NT-Ag@Si3N4 holds great promise in the applications of advanced packaging technology for high-power electronics.

Introducing oxygen vacancies into WO3 thin film for improving hydrogen sensing performance of Pd/WO3-x/AAO sensors

Introducing oxygen vacancy into semiconducting metal oxides (SMOs) is a strategic approach to promote their gas sensing performances. In this paper, the WO3-x thin films were meticulously deposited onto an anodic aluminum oxide (AAO) substrate, and the oxygen vacancies concentrations of WO3-x thin films were changed by adjusting the ratio of flux of Ar to O2 in magnetron sputtering process. Sequentially, a layer of palladium (Pd) was deposited on the WO3-x/AAO films, creating a nano-mesh structured hydrogen sensor with Pd as the catalytic element. The resulted amorphous WO3-x samples with varying concentration of oxygen vacancies were thoroughly analyzed using XPS and ESR, which confirmed that the oxygen vacancies concentration escalated with an increase in the ratio of flux of Ar to O2. The hydrogen sensitivity of prepared Pd/WO3-x/AAO sensors were examined. Our findings revealed an enhancement in hydrogen sensitivity for the sensors with an optimal concentration of oxygen vacancies. However, an excess of these vacancies was found to deteriorate their hydrogen sensing performance. Notably, the optimized Pd/WO3-x/AAO sensor exhibited a marked response even at a hydrogen concentration as low as 100 ppb, demonstrating its high sensitivity and selectivity towards hydrogen detection.