Sputtering of (111) highly-oriented nanotwinned Ag on polycrystalline Si3N4 substrates for high-power electronic packaging

Abstract

Nanotwinned silver (NT-Ag) exhibits excellent mechanical and electrical properties, attributed to its high-density and (111) highly-oriented twinning structure in nanoscale. Therefore, it has recently drawn much attention in the field of electronic packaging, where it can be utilized as interconnection or metallization materials. However, it has been a critical challenge to fabricate the high-density and highly-oriented NT-Ag onto polycrystalline ceramic substrates, whose crystal structure does not support the epitaxial growth of NT-Ag films. In the current work, a high-density and highly-oriented NT-Ag film has been fabricated onto a polycrystalline ceramic substrate, i.e., NT-Ag on silicon nitride (NT-Ag@Si3N4), using the magnetron sputtering method. As results, a close-packed arrangement of high-density NT-Ag has been observed within columnar grains aligned along its growth direction, whereas the nanoindentation hardness of the NT-Ag film reached 1.82 GPa, with an electrical resistivity of 2.06 μΩ‧cm. Moreover, this study has discussed and explained the growth kinetics and mechanism of NT-Ag films, by controlling magnetron sputtering process parameters, such as sputtering power and argon flow rate. Additionally, the differences in the growth mechanism of NT-Ag on (100) Si and polycrystalline Si3N4 have also been investigated. With its superior material properties, NT-Ag@Si3N4 holds great promise in the applications of advanced packaging technology for high-power electronics.