Effect of magnetron sputtering process parameters on the conductivity of thin metal film

Abstract

This paper focuses on the effect of magnetron sputtering process parameters on the performance of thin metal film. Copper–tin alloy metal film was deposited on both sides of the PVDF film using direct current magnetron sputtering technology, and the effects of different working pressures, sputtering powers, sputtering times, and argon flow rates on the uniformity, deposition rate, and electrical conductivity of the metal film were studied separately. The main and minor factors affecting the conductivity of the metal film were determined by multiple linear regression, and the process parameters were optimized. The optimal process parameters include a working pressure of 0.065 Pa, a sputtering power of 70 W, a sputtering time of 20 min, and an argon flow of 20 SCCM. The samples with the best electrical conductivity were analyzed by scanning electron microscopy and energy spectrometry for microscopic morphology and elemental composition. The experimental results showed that the sputtering time and sputtering power have a greater effect on the metal film uniformity and that the working pressure and argon flow rate have a smaller effect on the metal film uniformity; when the working pressure is lower, the sputtering power is higher, the sputtering time is longer, the argon flow rate is higher, and the conductivity of the sputtered metal film is better. The deposition rate decreased with the increase in the working pressure and increased with the increase in the sputtering power and argon flow rate. The working pressure is the main factor affecting the conductivity of the metal film, and the sputtering power and sputtering time are secondary factors.