Abstract
Fiber-textured and epitaxial NiO thin films were deposited on Si(100), c-Al2O3, and muscovite mica(001) substrates using reactive magnetron sputtering at substrate temperatures of 300°C and 400°C, to investigate the effect of film thickness and substrate temperature on epitaxial growth of NiO films. The as-deposited films exhibited a face-centered cubic structure with a larger lattice constant, attributed to strain induced during the sputtering process. With an increase in substrate temperature to 400°C, the d-spacing decreased due to strain release, approaching the NiO bulk value for the thickest film. The NiO film grown on Si(100) displayed fiber texture. On c-plane sapphire, NiO thin films exhibited twin domains and three-fold symmetry, consistent with expected crystallographic orientation relationship for NaCl-structured materials on sapphire:(111)NiO∥(0001)Al2O3and[01¯1]NiO∥[1¯010]Al2O3, [011¯]NiO∥[101¯0]Al2O3. On muscovite mica(001) substrates, the observed epitaxial shows that the mechanism is conventional epitaxy, rather than van der Waals epitaxy, consistent with the epitaxial growth of the non-layered non-van-der-Waals compound NiO. The epitaxial relationship was identified as of (111)NiO∥(001)Mica and [01¯1]NiO∥[010]Mica, [011¯]NiO∥[01¯0]Mica.
Published Version
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