Spray Pyrolysis Technique Research Articles

The electrical characterization of V2O5/p-Si prepared by spray pyrolysis technique using perfume atomizer

The electrical characterization of V2O5/p-Si prepared by spray pyrolysis technique using perfume atomizer

Investigation the Structure and Linear/Nonlinear Spectroscopic Performance of Fe:Co3O4/TiO2 Nanostructured Heterojunctions

Abstract The structure and linear/nonlinear spectroscopic performance of Fe:Co3O4/TiO2 (FCTO) nanostructured heterojunctions (HJs) were investigated. Pure TiO2 nanostructures and FCTO nanostructured HJs were synthesized by spray pyrolysis technique. The surfaces morphology of the samples was examined utilizing a scanning electron microscope. Energy-dispersive X-ray measurements were performed to confirm the content of the prepared FCTO HJs. The structures’ variations and bonding were explored with Fourier transform infrared spectroscopy. X-ray diffraction measurements were carried out to study the crystallinity, structures, and lattice parameters, revealing that the pure TiO2 nanostructures have a tetragonal crystalline structure with an anatase phase, while the Fe:Co3O4 layer possesses a cubic crystalline structure. XRD analysis also showed that the crystallite size increases from 15.9 nm (pure TiO2) to 25.4 nm (FCTO HJ). Optical performance was studied via UV-visible-NIR measurements. The optical parameters of the FCTO HJs were investigated and the nonlinear optical performance of the prepared samples was assessed. Great enhancement of the linear/nonlinear optical performance of the FCTO HJs was achieved compared with the pure TiO2 nanostructures. The results reveal that the Fe:Co3O4/TiO2 nanostructured HJs are recommended for many visible spectrum applications.

Effect of gamma and ultraviolet irradiation on the optical properties of copper oxide nanostructured thin films by chemical spray pyrolysis

Nanostructured copper oxide thin films were grown by the chemical spray pyrolysis (CSP) technique. Utilizing a homemade spray pyrolysis method, thin films are created. This work investigates the role of gamma ray and ultraviolet ray irradiation on the optical properties of copper oxide thin films(CuO) prepared. In this framework, used different substrate temperatures 300 °C, 350 °C, and 400 °C for the layers were grown on glass for the prepared CuO thin films. UV–visible spectrometer, field emission scanning electron microscopy (FE-SEM) and X-ray diffraction patterns(XRD) measurements were all used to characterize the samples. The UV–visible spectroscopy showed a decrease in the absorbance and the optical band gap of CuO thin films with the increase in the higher substrate temperatures before irradiation. Additionally, surface plasmon resonance peaks (λSPR) were observed at 329 nm. FE-SEM images revealed spherical-like shapes with an average diameter range of 48 nm,56 nm and 62 nm for 300 °C, 350 °C, and 400 °C, respectively. An analysis of X-rays revealed that CuO thin films contained the crystallographic planes of a monoclinic and an orthorhombic crystal system. Also, when samples were exposed to gamma and UVC radiation, the absorbance intensity of CuO thin films increased, but the optical band gap decreased.

Synthesis, optimization, electrochemical and electrochromic properties of Zr-doped NiO films by chemical spray pyrolysis

Zirconium (Zr)-doped NiO films with different contents were successfully synthesized via the chemical spray pyrolysis technique. The structure, morphology, optical and electrochemical behaviors of these films were investigated by X-ray diffraction (XRD), Raman spectrometer, scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), UV–Vis-NIR spectrophotometry, cyclic voltammetry (CV), and chronoamperometry (CA). XRD results suggested that the synthesized samples have the cubic crystal structure and a preferred orientation along the plane (111). Raman spectra further confirmed the successful incorporation of zirconium ions into the NiO films. SEM images explained that the surfaces of the doped films were composed of uniform and dense nanoparticles. EDS analysis suggested that Zr, Ni and O elements were uniformly distributed on the films. The optical results showed that the band gap decreases from 3.53 eV to 3.47 eV as the increase of zirconium doping content. The electrochemical analysis suggested that zirconium doping improved the specific capacitance of the NiO films (the NiO film with the Zr amount of 7 %, 59 F/g at 6 mV/s). In addition, the NiO film with 5 % Zr doped amount exhibited the largest ΔOD (81 %), the largest CE (60.37 cm2/C), and the fastest coloring time (tc =2.1 s) and bleaching time (tb = 2.4 s). These results showed that this film had the excellent electrochromic properties, suggesting that the optimal Zr doped amount of NiO films is 5 %. As a novel kind of electrochromic material, the Zr-doped NiO film has broad application prospects in smart windows, green buildings and energy efficient utilization fields.

Physical properties of La-doped ZnO thin films prepared by spray pyrolysis technique

In this research, La-doped ZnO thin films were produced using the spray pyrolysis method to study the influence of La concentration. The films were doped with La at different concentrations ranging from 1 to 5 weight percent (wt%). Various physical properties of the deposited films were examined using a variety of techniques. X-ray diffraction analysis indicated the presence of a hexagonal ZnO phase as the only crystalline phase in all deposited films. The crystallite size was calculated using Scherrer’s equation. Field emission scanning electron microscopy (FE-SEM) images revealed the formation of large grains exceeding the crystallite size, with the smallest grain size of 143.5 nm observed in the La-1 wt% film. Energy dispersive x-ray (EDX) analysis confirmed the existence of La in the deposited films. The optical band gap values were found to increase from 2.7 to 3.3 eV with increasing La content. Notably, a significant decrease in decay time was noted in UV sensing performance at La concentrations of 3 and 5 wt%.

Fabrication of nanostructured MgO:Fe as NO2 gas sensor prepared by spray pyrolysis technique

Nanostructured MgO:Fe was fabricated by spray Pyrolysis technique (SPT). XRD verifies MgO's cubic structure. The MgO thin film's crystallite size increased to 10.7–15.41 nm due to doping. SEM pictures display The surface becomes rougher and the grain size increases with concentration. The ideal MgO's average transmission value in the visible spectrum was 70%. The Tauc relation was used to calculate Eg, which decreased for MgO:Fe doping at 4%wt concentration from 362.1 to 3.52 eV. Resistance change as a measure of film sensitivity to gas indicates that MgO is a p-type semiconductor, with the maximum resistance being shown by MgO:Fe at 4%wt. The sensitivity of MgO films to NO2 diminishes as Fe content increases.

Growth and characterization of tin disulphide thin film by spray pyrolysis technique

An inexpensive spray pyrolysis process has been used to create thin layer of tin disulphide. The concentration, flow rate, and nozzle to substrate distance were tuned as deposition parameters to produce high-quality thin films. Temperature is varied in the range 200˚C to 350˚C. Through physical research, properties such as the structural, electrical and optical were examined. The films generated are SnS2 with a hexagonal structure, as revealed by X-ray diffraction. EDAX analysis confirms SnS2 thin films. Scanning electron microscopy indicated uniform stacking and material adherence to the glass substrate. A 2.22 eV straight band gap was found. Two peaks in the photoluminescence spectrum were indicative of the emission of green and yellow fluorescence, respectively. Electrical properties reveal that resistivity decreases from 3.18 x 10-2 Ω cm to 3.06 x 10-3 Ω cm, carrier concentration & mobility increases to 1.4 x 1020/ cm3 to 1.8 x 1020/ cm3 , 1.92 cm2 /Vs to 5.3 cm2 /Vs respectively with increases in temperature.

Synthesis and characterization of Sn-doped TiO2 thin films for biosensor application

TiO2 a wide bandgap material has a great potential for use in semiconductor industry due to its better electronic properties combined with low cost, chemical stabilioty and nontoxicity. Further metal doping is found to modify the conductivity, electrical, and optical characteristics. In this research, deposition of Sn-doped TiO2 was carriedout using the spray pyrolysis technique. The electrical properties were obtained by using the Hall effect technique and structural properties of the film were analyzed by X-ray diffraction and EDAX Scanning electron microscopy. The result of X-ray diffraction showed that the thin film deposited by spray pyrolysis is polycrystalline with preferential orientation in the direction of (002) fields. SEM analysis exhibited membrane structure for the thin film deposited by spray pyrolysis. The results of electrical conductivity were obtained by using the Hall effect technique.

Modifications of some physical properties of nanostructured indium doped Co3O4 thin films

Using the chemical spray pyrolysis (CSP) technique, nanostructured undoped and Co3O4:In thin films are deposited. The effect of indium doping content in Cobalt ranged from 1% to 3% on optical, structural, and topographical properties of Co3O4 nanostructured thin films. No new peaks belonging to the In phase were seen, according to X-ray diffraction research, which revealed that pure and Co3O4: In thin films are polycrystalline in and cubic phase with (111), (311), (400), and (511) preferable orientation for all filmsThe Scherrer formula computation of average crystallite size shows that the size of Nano crystallites grows when doping is enhanced. AFM micrographs demonstrated how the surface shape of the films was discovered to be influenced by the inclusion of indium in the Co3O4 location.SEM images of Undoped Co3O4 and Co3O4:In films (CSP technique), showing separate semi-spherical blocks (120-200 nm) of nanoparticles (<30 nm). Band gap values for pure and doped were 2.52 to 2.38 eV. Resistance increases with increases Indium-doping, indicating more charge carriers and potential surface roughness influence. Sensitivity decreases with higher Indium concentrations, attributing to enhanced crystallinity and nano-crystalline size.

Modifications of some physical properties of nanostructured indium doped Co3O4 thin films

Using the chemical spray pyrolysis (CSP) technique, nanostructured undoped and Co3O4:In thin films are deposited. The effect of indium doping content in Cobalt ranged from 1% to 3% on optical, structural, and topographical properties of Co3O4 nanostructured thin films. No new peaks belonging to the In phase were seen, according to X-ray diffraction research, which revealed that pure and Co3O4: In thin films are polycrystalline in and cubic phase with (111), (311), (400), and (511) preferable orientation for all filmsThe Scherrer formula computation of average crystallite size shows that the size of Nano crystallites grows when doping is enhanced. AFM micrographs demonstrated how the surface shape of the films was discovered to be influenced by the inclusion of indium in the Co3O4 location.SEM images of Undoped Co3O4 and Co3O4:In films (CSP technique), showing separate semi-spherical blocks (120-200 nm) of nanoparticles (<30 nm). Band gap values for pure and doped were 2.52 to 2.38 eV. Resistance increases with increases Indium-doping, indicating more charge carriers and potential surface roughness influence. Sensitivity decreases with higher Indium concentrations, attributing to enhanced crystallinity and nano-crystalline size.

Zn2-xGeO4-GeO2:(x)Mn2+ films with long persistence, intense brightness and high quantum efficiency, deposited by ultrasonic spray pyrolysis

This work shows the synthesis and characterization of the Zn2-xGeO4-GeO2:(x)Mn2+ (x = 0.10, 0.25, and 0.50 at.%) films using the Ultrasonic Spray Pyrolysis (USP) technique. These films were deposited at 500 °C and heat treated at 800 °C for 13 h. X-ray diffraction (XRD) measurements showed the rhombohedral and hexagonal phases of Zn2-xGeO4 (78.8 %) and GeO2 (21.2 %), respectively. SEM micrographs exhibited the surface morphology of these films. The STEM and HAADF show Ge, Zn, and O atomic layers. In addition, XPS was carried out to observe the oxidation states of Mn2+ (75.4 %) and Mn3+ (24.6 %) for the films doped with Mn ions (0.10 at.%). Incorporating manganese ions into the Zn2-xGeO4-GeO2 host lattice generated an extremely green emission, exciting at 250 nm. The photoluminescence and persistence luminescence properties were studied in accordance with the manganese doping concentration. For photoluminescence, it was found that the optimal doping percentage was 0.25 at.%, and for persistence luminescence, it was 0.10 at.% Mn with λex = 250 nm. Quantum efficiency measurements gave a result of 100 %. In addition, preliminary CL measurements were exhibited.

Nanorod inside hollow-nanosphere structured magnetoelectric nanocatalyst for remotely controlled electrocatalysis assisted environmental remediation

We introduce a highly efficient method for the catalytic breakdown of organic compounds using nanorods embedded within hollow nanospheres structured magnetoelectric nanocatalyst (MENC). MENCs were fabricated through a single-step process utilizing the ultrasonic spray pyrolysis technique. The dynamic electric dipole generation capability due to synergistic interaction between nanorods at the core and the hollow nanosphere shell creates a nanoscale magnetoelectric device capable of electrocatalysis-assisted water purification through advanced oxidation processes under remotely applied magnetic field excitation. Our study examines the electrocatalytic degradation of organic pollutants by MENCs under magnetic field excitation, achieving an unprecedented 90% removal efficiency for synthetic dyes. This remarkable efficiency is a result of surface redox reactions facilitated by electron and hole transfer, resulting in the production of Reactive oxygen species (ROS) such as O2•− and •OH. Additionally, antioxidant experiments were performed to confirm the ROS generation capability of MENCs under magnetic field excitation. Furthermore, trapping experiments performed employing specific scavengers for individual reactive species reveal the mechanism responsible for the magnetic field-driven catalytic breakdown of organic contaminants by MENCs. Interestingly, the MENCs exhibit >95% reduction in Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) bacteria, respectively, within 90 min of exposure to a (20 mT& 1.9 kHz) AC magnetic field.

Bismuth doping for enhanced physical and electrochemical properties of CuO–ZnO thin films for complete degradation of Rifampicin and other antibiotics alongside organic dyes

In the current Study, undoped and bismuth doped CuO + ZnO coupled oxide thin films were meticulously deposited on glass substrates utilizing the spray pyrolysis technique. The effect of bismuth doping level in the structural, morphological, optical, electrical and electrochemical properties of these thin films were systematically investigated. X-ray diffraction patterns unequivocally confirmed the polycrystalline nature of the films, showcasing a combination of monoclinic CuO and hexagonal wurtzite ZnO phases. Furthermore, at a doping level of 8 %, the presence of the bismuth phase was observed, indicating its incorporation into the CuO–ZnO matrix. As the bismuth doping level increased, we observed a noticeable improvement in crystallinity and grain size. The distinctive characteristics of the developed thin films underscored a discernible enhancement in physical and electrochemical properties with the increase of bismuth doping level. Subsequently, The 8 % bismuth-doped CuO–ZnO thin films exhibit remarkable efficiency in degrading pharmaceutical compounds. Specifically, within a mere 2-h timeframe, these films demonstrate an exceptional degradation efficiency of 99 % towards Rifampicin, a widely used antibiotic. Moreover, their efficacy extends to other pharmaceutical pollutants, showcasing a significant degradation of 77 % for Ampicillin, an antibiotic commonly used to treat bacterial infections, and an even more substantial degradation of 90 % for Rhodamine B, a prominent dye compound. This underscores the promising potential of 8 % bismuth-doped CuO–ZnO thin films in addressing environmental and health-related challenges associated with pharmaceutical contaminants.

P-NiO/n-ZnO heterojunctions for visible-blind UV and IR photodetectors: A low-temperature fabrication approach

We investigate the design and characterization of stacked semiconductor structures, specifically p-NiO on n-ZnO, for achieving a multispectral photo-response. This device is fabricated by depositing a thin film of NiO on ZnO using a simple, low-temperature spray pyrolysis technique. The resulting heterojunction device, formed on a glass substrate at 250 °C and annealed at 500 °C, exhibits visible-blind characteristics and demonstrates remarkable stability for ultraviolet (UV) and infrared (IR) detection with a low dark current of 22 nA. The Ag/p-NiO/n-ZnO/Ag device shows enhanced photo-response only at wavelengths of 253 nm and 900 nm with a quick response time (Tr = 4.6 ms and Td = 20.3 ms). The observed photo-current is attributed to defect-mediated charge transport at the interface. These promising results highlight the potential of p-NiO/n-ZnO heterojunction-based device for applications demanding robust performance as visible blind IR and UV photodetectors.

Effect of doping level on the photoconduction and chemiresistive ethanol gas sensing of lanthanum-doped CuO films

Undoped and lanthanum (La)-doped copper oxide (CuO) thin films were prepared by the nebulizer spray pyrolysis technique. The X-ray diffraction analysis revealed that the effective doping of lanthanum does not alter the monoclinic crystalline structure of copper oxide thin films. Raman spectra confirmed the crystalline quality of undoped and La-incorporated CuO films. From, scanning electron micrograph images, the La-doped CuO films exhibit spherical particles. Energy dispersive X-ray analysis confirmed the existence of copper, lanthanum and oxygen elements. The doping of La-substituted CuO films showed a minimum bandgap when compared to undoped CuO film. The oxidation states of Cu 2p, La 3d and O 1s elements were observed. The electrical resistivity of the films was considerably decreased due to the doping of La ions in CuO matrix. The photoluminescence spectra show that the doping of La ions increases the defect states and shows increased intensity. The time resolved photoluminescence analysis revealed that an extended carrier lifetime was observed for the La-doped films. The La-doped CuO sensors achieved a superior gas sensing performance at room temperature and exhibited quick response and recovery times, suggesting that the sensor has the potential for the detection of harmful volatile gases in real-world applications. The photoconductive investigation revealed that the La-doped CuO films exhibited higher charge-transporting properties and increased light-harvesting ability. This study sheds light on designing gas sensors working under ambient conditions and photosensors for optoelectronic devices.

Photocatalytic removal of organic dyes mediated by p-NiO/p-CuO isotype heterojunctions under sunlight illumination

Building heterojunctions between different semiconductors is one of the most typical approaches to separating photo-induced electrons and holes in order to enhance photocatalytic efficiency. In this study, NiO, CuO, and NiO–CuO nanocomposites thin films are obtained under the same deposition conditions by a simple spray pyrolysis technique. The structural, morphological, and optical properties of the deposited thin films were investigated using different techniques such as XRD, Raman, SEM, EDX, PL, and UV–visible spectroscopy. XRD and Raman analysis revealed that NiO, CuO, and NiO–CuO have crystalline cubic, monoclinic, and mixed phases, respectively. EDX analysis confirmed the chemical composition, and SEM images reveal different morphologies depending on the Ni:Cu molar ratio. The photodegradation of MB dye in the presence of the thin films was examined under sunlight. Compared with individual metal oxides, NiO–CuO nanocomposites are better as photocatalysts. Optical measurements were able to connect these enhanced photocatalytic activities to the synergistic effects of combining NiO and CuO, which promoted the creation of defects and highly reactive species on surfaces and an effective separation of photogenerated charges. The benefits of p-p isotype heterojunctions for dye photodegradation that this study has illustrated provide a novel perspective on metal oxydes-based nanocomposites for the development of efficient and novel photocatalysts.

Spinel nickel ferrite (NiFe2O4) materials synthesized via spray-pyrolysis for electrochemical supercapacitor application

To explore potential applications of NiFe2O4-based supercapacitors in various energy storage systems, including portable electronic devices, electric vehicles, and grid energy storage, highlighting the advantages and challenges of using NiFe2O4 in these applications. To identify and propose future research directions for further improving the performance of NiFe2O4 supercapacitors. In the study focuses on optimizing concentration of synthesis to achieve desirable structural and electrochemical properties, characterizing the synthesized materials, and assessing their specific capacitance, energy density, power density, cycle stability, and rate capability. The different molar precursor solutions were utilized for the formation of NiFe2O4 thin films by using the cost-effective spray pyrolysis technique. The impact of different molarities on the structural, morphological, elemental, optical, and charge storage performance of NiFe2O4 thin films has been studied. In the XRD studies identified the cubic crystalline structure with Fd-3 m space group symmetry of NiFe2O4. The FE-SEM shows the grain-like surface morphology of NiFe2O4 thin films. The EDAX study reveals that NiFe2O4 thin films were stoichiometric. Bandgap energy values of the thin films were observed in the range of 1.97 to 2.2 eV with allowed direct band gap transitions. The maximum specific capacitance for NiFe2O4 thin film was found to be 707 Fg−1 at 2 mVs−1 with the wider potential window of − 0.8 to + 1 .6 V in 1 M KOH aqueous electrolyte. GCD study confirms the pseudocapacitive behavior of NiFe2O4 thin films. The maximum specific energy and specific power were found to be 83.88 WhKg−1 and 5.294 KWkg−1 at a current density of 0.002 Ag−1. Such as spinel ferrite NiFe2O4 thin film electrodes as an excellent candidate material for electrochemical supercapacitor applications.

Effect of coating temperature on the properties of CdS thin films coated by nebulizer spray pyrolysis method for photodetection applications

Nanostructured CdS-based photodetectors have been focused on recent years because of their high photosensitivity and quick response time. This work reports the photodetector characteristics of CdS thin films prepared using a nebulizer-assisted spray pyrolysis technique by varying substrate temperatures. The X-ray diffraction (XRD) pattern of CdS films exhibits hexagonal structure with orientation along the (002) plane and CdS films deposited at 450 °C exhibits a higher crystallite size of 53 nm. Morphological analysis shows that the small grains become large spherical flakes at higher substrate temperatures. The optical studies showed that around the visible region, the films exhibit solid optical absorbance, and when substrate temperatures rise to 450 °C, the energy bandgap value decreases to 2.29 eV. The photoluminescence (PL) spectra exhibit two emission peaks: a broad peak at 525 nm and a sharp dominant peak at 680 nm. The CdS thin film deposited at 450 °C produced the highest photoresponsivity (R) of 37.1 × 10-2 A/W, detectivity (D*) of 268 x108 Jones, external quantum efficiency (EQE) of 120 %, and response/recovery times of 0.92/0.28 s under 532 nm illumination. The study suggests that CdS thin films are suitable for visible photodetector applications due to their simple and cost-effective production process.

Investigation studies of pure and molybdenum doped zinc oxide thin films deposited by spray pyrolysis technique for transparent conductive oxides applications

Investigation studies of pure and molybdenum doped zinc oxide thin films deposited by spray pyrolysis technique for transparent conductive oxides applications

Tuning of structure, surface morphology and optical properties of spray-coated nickel tin oxide thin films by heat treatment

In this work, nickel tin oxide (NiSnO3) in a 1:1 ratio was synthesized using a simple spray pyrolysis technique followed by annealing at 450 °C for different time durations. The X-ray diffraction (XRD) revealed the polycrystalline nature with perovskite structure of NiSnO3 without the formation of any secondary phases. Annealing improved the crystallinity of the films. The annealed films exhibited a preference for orientation along the (310) plane. The largest crystallite size was obtained for 4 h of annealed film. The scanning electron microscopy (SEM) images of the films distinctly illustrate enhanced crystallinity following the annealing process. Energy-dispersive X-ray spectroscopy (EDS or EDX) indicates that the film possesses a near-stoichiometric composition. All the films resulted in more than 70 % transmittance in the visible region except for 8 h annealed. The gradual reduction of energy bandgap was observed for the sample. The four peaks at 358 nm, 415 nm, 436 nm, and 460 nm were observed in photoluminescence (PL) spectra corresponding to near band emission and defects related emissions respectively. The determined optical parameters from the present study indicate that the 4-h annealed film holds promise as a favourable option for optoelectronic and photonic devices.