Abstract
This work shows the synthesis and characterization of the Zn2-xGeO4-GeO2:(x)Mn2+ (x = 0.10, 0.25, and 0.50 at.%) films using the Ultrasonic Spray Pyrolysis (USP) technique. These films were deposited at 500 °C and heat treated at 800 °C for 13 h. X-ray diffraction (XRD) measurements showed the rhombohedral and hexagonal phases of Zn2-xGeO4 (78.8 %) and GeO2 (21.2 %), respectively. SEM micrographs exhibited the surface morphology of these films. The STEM and HAADF show Ge, Zn, and O atomic layers. In addition, XPS was carried out to observe the oxidation states of Mn2+ (75.4 %) and Mn3+ (24.6 %) for the films doped with Mn ions (0.10 at.%). Incorporating manganese ions into the Zn2-xGeO4-GeO2 host lattice generated an extremely green emission, exciting at 250 nm. The photoluminescence and persistence luminescence properties were studied in accordance with the manganese doping concentration. For photoluminescence, it was found that the optimal doping percentage was 0.25 at.%, and for persistence luminescence, it was 0.10 at.% Mn with λex = 250 nm. Quantum efficiency measurements gave a result of 100 %. In addition, preliminary CL measurements were exhibited.
Published Version
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