Effect of sulphurization and Al doping on Cd0.25Zn0.75S thin films deposited by ultrasonic spray pyrolysis technique

Abstract

The Pure And Al-Doped Cd0.25zn0.75s Thin Films Have Been Firstly Fabricated By Ultrasonic Spray Pyrolysis (Usp) Technique And Then These Samples Were Subjected To Sulfurization At 500 °C In Nitrogen Atmosphere. The Structural, Electro-Optical, Morphological Properties, And The Elemental Composition Of The As-Grown And Sulphurated Samples Have Been Determined By Applying X-Ray Diffraction (Xrd), Ultraviolet-Visible Spectroscopy (Uv–vis), Scanning Electron Microscopy (Sem), And Energy Dispersive Spectroscopy (Eds) Measurements, Respectively. Xrd Measurements Have Revealed That The Sulphurated Samples Have Hexagonal Lattice Structure While The As-Grown Samples Have Cubic Lattice Structure. Uv–vis Measurements Have Shown That The Lowest Band Gap Energy Of 2.68 Ev Was Observed For Sulphurated Al-Doped Samples As The Sulphurated Un-Doped Samples Had The Highest Band Gap Energy Of 3.96 Ev. Additionally, Cross-Sectional Sem Images Of The Samples Have Proved That Usp Is A Controllable Deposition Technique For The Fabrication Of The Pure And Al Doped Cd0.25zn0.75s Thin Films With 10 Nm Thickness Resolution.