Spin Transfer Research Articles

Recent Developments on Understanding Charge Transfer in Molecular Electron Donor-Acceptor Systems.

Charge transfer (CT) in molecular electron donor-acceptor systems is pivotal for artificial photosynthesis, photocatalysis, photovoltaics and fundamental photochemistry. We summarized the recent development in study of CT and discussed its application in thermally activated delayed fluorescence (TADF) emitters. The direct experimental proof of the spin multiplicity of the charge separated (CS) state with pulsed laser excited time-resolved electron paramagnetic resonance (TREPR) spectroscopy was discussed. Experimental determination of the electron exchange energy (J) of the CS state, with magnetic field effect on its yield or lifetime was introduced. The electron spin transfer accompanying the CT, studied with pulsed EPR spectra was briefly discussed. Tuning of the CT yield and kinetics with selective vibration excitation of the linker (the bridge) with IR pulse was presented. Above all, these studies show that there are more fun than simply monitoring the formation of the cations and anions and the kinetics or CS yields in this area.

Recent Developments on Understanding Charge Transfer in Molecular Electron Donor‐Acceptor Systems

AbstractCharge transfer (CT) in molecular electron donor‐acceptor systems is pivotal for artificial photosynthesis, photocatalysis, photovoltaics and fundamental photochemistry. We summarized the recent development in study of CT and discussed its application in thermally activated delayed fluorescence (TADF) emitters. The direct experimental proof of the spin multiplicity of the charge separated (CS) state with pulsed laser excited time‐resolved electron paramagnetic resonance (TREPR) spectroscopy was discussed. Experimental determination of the electron exchange energy (J) of the CS state, with magnetic field effect on its yield or lifetime was introduced. The electron spin transfer accompanying the CT, studied with pulsed EPR spectra was briefly discussed. Tuning of the CT yield and kinetics with selective vibration excitation of the linker (the bridge) with IR pulse was presented. Above all, these studies show that there are more fun than simply monitoring the formation of the cations and anions and the kinetics or CS yields in this area.

Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization.

Magnetization switching is the most important operation in spintronic devices. In modern nonvolatile magnetic random-access memory (MRAM), it is usually realized by spin-transfer torque (STT) or spin-orbit torque (SOT). However, both STT and SOT MRAM require current to drive magnetization switching, which will cause Joule heating. Here, we report an alternative mechanism, Dzyaloshinskii-Moriya interaction (DMI) torque, that can realize magnetization switching fully controlled by voltage pulses. We find that a consequential voltage-controlled reversal of DMI chirality in multiferroics can lead to continued expansion of a skyrmion thanks to the DMI torque. Enough DMI torque will eventually make the skyrmion burst into a quasiuniform ferromagnetic state with reversed magnetization, thus realizing the switching of a perpendicular magnet. The discovery is demonstrated in two-dimensional multiferroics, CuCrP_{2}Se_{6} and CrN, using first-principles calculations and micromagnetic simulations. As an example, we applied the DMI torque for simulating leaky-integrate-fire functionality of biological neurons. Our discovery of DMI torque switching of perpendicular magnetization provides tremendous potential toward magnetic-field-free and current-free spintronic devices, and neuromorphic computing as well.

Ab initio comparison of spin-transport properties in MgO-spaced ferrimagnetic tunnel junctions based on Mn3Ga and Mn3Al

We report on first-principles spin-polarised quantum transport calculations (from NEGF + DFT) in MgO-spaced magnetic tunnel junctions (MTJs) based on two different Mn-based Heusler ferrimagnetic metals, namely Mn3Al and Mn3Ga in their tetragonal DO22 phase. The former is a fully compensated half-metallic ferrimagnet, while the latter is a low-moment high-spin-polarisation ferrimagnet, both with a small lattice mismatch from MgO. In identical symmetric and asymmetric interface reconstructions across a 3-monolayer thick MgO barrier for both ferrimagets, the linear response (low-voltage) spin-transfer torque (STT) and tunneling magneto-resistance (TMR) effects are evaluated. A larger staggered in-plane STT is found in the Mn3Ga case, while the STT in Mn3Al vanishes quickly away from the interface (similarly to STT in ferromagnetic MTJs). The roles are reversed for the TMR, which is practically 100% in the half-metallic Mn3Al-based MTJs (using the conservative definition) as opposed to 60% in the Mn3Ga case. The weak dependence on the exact interface reconstruction would suggest Mn3Ga–Mn3Al solid solutions as a possible route towards optimal trade-off of STT and TMR in the low-bias, low-temperature transport regime.

The importance of the interface for picosecond spin pumping in antiferromagnet-heavy metal heterostructures

Interfaces in heavy metal (HM) - antiferromagnetic insulator (AFI) heterostructures have recently become highly investigated and debated systems in the effort to create spintronic devices that function at terahertz frequencies. Such heterostructures have great technological potential because AFIs can generate sub-picosecond spin currents which the HMs can convert into charge signals. In this work we demonstrate an optically induced picosecond spin transfer at the interface between AFIs and Pt using time-domain THz emission spectroscopy. We select two antiferromagnets in the same family of fluoride cubic perovskites, KCoF3 and KNiF3, whose magnon frequencies at the centre of the Brillouin zone differ by an order of magnitude. By studying their behaviour with temperature, we correlate changes in the spin transfer efficiency across the interface to the opening of a gap in the magnon density of states below the Néel temperature. Our observations are reproduced in a model based on the spin exchange between the localized electrons in the antiferromagnet and the free electrons in Pt. Through this comparative study of selected materials, we are able to shine light on the microscopy of spin transfer at picosecond timescales between antiferromagnets and heavy metals and identify a key figure of merit for its efficiency: the magnon gap. Our results are important for progressing in the fundamental understanding of the highly discussed physics of the HM/AFI interfaces, which is the necessary cornerstone for the designing of femtosecond antiferromagnetic spintronics devices with optimized characteristics.

Control of interface anisotropy for spin transfer torque in perpendicular magnetic tunnel junctions for cryogenic temperature operation

The possibility of higher electrical efficiency in computing by operating at low temperatures raises the need for non-volatile memory cells optimized for cryogenic operation. We report a study on low temperature spin transfer torque switching of magnetic tunnel junctions with 20 to 100 nm in diameter with thermal stability adapted to low temperature operation. The evolution of magnetic and electrical properties are characterized for four different stacks from 300 to 10 K comprising insertions of Mg, Ru and permalloy (Py) in the storage layer to reduce its effective anisotropy. Two figures of merit are used to compare different devices and stacks, Δ/Ic and Δ/Esw, normalizing the thermal stability Δ by the critical current or switching energy. Devices with a Py insertion layer show a higher FOM (3.78 kBTop/μA) and switching energy Esw below 655 fJ for 100 ns pulses at Top = 10 K. A procedure to optimize the reference layer stray field was also implemented to achieve full compensation using a synthetic antiferromagnetic layer for 20 nm diameter devices.

Field-free switching model of spin–orbit torque (SOT)-MTJ device with thermal effect based on voltage-controlled magnetic anisotropy (VCMA)

Electrically driven magnetization switch has attracted much attention in the new spintronic memory, especially for spin–orbit torque (SOT)-based magnetic random access memory (MRAM). However, the published models are facing limitations with the continuous shrinkage of the feature size down to nanoscale. Also, the thermal effect caused by switching operation is non-negligible. Therefore, an effective model is needed to represent the switching dynamic of the device concerning the influences of the nanoscale and the thermal effect. In the paper, a compact model of three-terminal SOT-driven switching is established. The influence of the voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (STT) effect induced by bias voltage on the field-free SOT-driven switching is considered by numerically solving the LLG equations. Furthermore, a 3D model of the SOT-MTJ device is established by finite element method to trace the thermoelectric behavior inside the device. The thermoelectric behavior is integrated into the compact model to show the influence of the temperature on the switching behavior, highlighting the importance of the thermal effect for the realistic modelling of SOT-driven switching. Finally, a novel voltage pulse scheme is proposed, which can effectively shorten the switching time and improve the reliability of the device. The established model could provide strategies and guidelines for next-generation memory design and application.

Atomistic Investigation of Interface Edge Defect in CoFeB/MgO Ferromagnetic Nano-Dots

The spin transfer torque (STT) based magnetic random access memory (MRAM) device has been seen as the next general storage device which can realize non-volatile storage and in-memory computing. However, the shape defect that comes from the fabrication process will influence the performance of the MRAM device. In this work, the relationship between the critical current and switching time and the interface edge defect in a CoFeB MRAM is studied by the atomistic spin model. The atomistic simulations that the effect of the interface edge defect depends on the thickness of the magnetic layer, the operating temperature and the driven current density. Our finding should also benefit the control of the fabrication process of the STT-based technologies.

Low magnetic damping in an ultrathin CoFeB layer deposited on a 300 mm diameter wafer at cryogenic temperature

We deposited an ultrathin CoFeB(1.1 nm) layer, which functions as a storage layer of MgO-based magnetic tunnel junctions for spin-transfer-torque (STT) magnetoresistive random-access memory (MRAM), on ϕ300 mm wafers at 100 K and investigated its effect on the magnetization dynamics of CoFeB. We observed clear reductions in both the inhomogeneous linewidth and total magnetic damping parameter for the CoFeB layer deposited at 100 K compared to those deposited at 300 K through the improvement in the interfacial quality. The results show that deposition at cryogenic temperatures is an effective manufacturing process for high-quality magnetic thin films with low magnetic damping.

Growth temperature-controlled Gilbert damping and anisotropies in PLD grown epitaxial Co2FeSi Heusler alloy thin film

The utilization of spin rather than charge as a functional aspect in the electronic devices will result in an energy-efficient, thermally stable, and fast operation. Cobalt-based Heusler alloy Co2FeSi (CFS) offers excellent possibilities due to its high curie temperature, large spin polarization, and low Gilbert damping (α). Small damping makes the alloy fascinating for spin transfer torque magnetoresistive random-access memory (STT-MRAM) devices where a low α causes a low value of switching current. The present investigation explored the effect of deposition temperature on the chemical, structural and magnetic properties of the pulsed laser deposition grown single-crystal CFS film of thickness 50 nm on a lattice-matched (001) MgO substrate. The XRD data suggest that Co site atomic ordering and overall film crystallinity improved with temperature, resulting in a minimal value of α obtained from ferromagnetic resonance (FMR) experiment in the film grown at 600°C. The azimuthal angular variation (φ) of FMR field data gives a fourfold anisotropy pattern that confirms the single-crystal CFS film epitaxially grown on the MgO substrate. Two in-plane anisotropies, namely cubic (four-fold) and uniaxial, were obtained in all the samples. This investigation is crucial in the fabrication of fast spintronics based memory and processing devices.

Time-domain computing for Boolean logic using STT-MRAM

With the development of artificial intelligence, the separation of memory and processor in the traditional von-Neumann architecture has led to the bottleneck of data transmission hindering the development of energy efficient computing. The computing-in-memory (CIM) paradigm is expected to solve the problems of memory wall and power wall. In this work, we propose a time-domain (TD) computing scheme based on the spin transfer torque magnetic random access memory (STT-MRAM). Basic Boolean logic operations, such as AND/OR/Full-adder (FA), are implemented through converting the bit-line voltage to time delay and time-to-digital converter (TDC). The proposal is simulated using the 28 nm CMOS process and 40 nm MTJ compact model. Monte-Carlo simulations show that 94.2% to 100% computation accuracy can be obtained and the delay of AND/OR and FA is 2.5 ns and 3.5 ns. The energy consumption of AND/OR and FA achieve 59.43 fJ and 97.56 fJ, respectively.

Evidence for incoherent reversal in perpendicular MRAM cells down to 20 nm diameter

We investigate experimentally the time evolution of the magnetization reversal in spin-transfer torque driven perpendicular magnetoresistive memory cells in the diameter range of 20 to 65nm. The switching process is characterized by two metrics: the incubation time and the reversal time, where both are stochastic in nature. We find that the average reversal time increases with cell size. The reversal time is dominated by domain wall pinning effects that can last several tens of nanoseconds for the bigger devices. However, even for the smallest cells, we still observe similar behavior albeit with shorter pinning durations of the order of 2 to 3 nanoseconds, indicating that the magnetization reversal is incoherent.

The Role of Damping Rate Amplitude in the Synchronization of Two Coupled Oscillators

In this paper, we investigate the synchronization phenomenon between two Spin-transfer Torque Nanooscillators (STNOs) of different frequencies in two pillar systems under vortex configuration detunings or driving frequencies. The oscillators’ mutual synchronization occurs through magnetic dipolar interaction. Our micromagnetic simulations show that an amplitude fluctuation referred to as [Formula: see text] has a significant impact on determining the synchronization frequency. The evolution of frequency and amplitude fluctuation rate in two different oscillator sizes versus external perpendicular field will be compared and discussed. Our results reveal that the oscillator with lower [Formula: see text], referred to as the “Leader” oscillator, leads the synchronization process. As such, the “follower” oscillator adjusts its frequency as to that of the “Leader”, thus achieving synchronization. We believe that taking [Formula: see text] into consideration can help in controlling synchronization frequencies in future building blocks of any network multi-array spintronics’ devices.

Accelerating ultrafast magnetization reversal by non-local spin transfer

When exciting a magnetic material with a femtosecond laser pulse, the amplitude of magnetization is no longer constant and can decrease within a time scale comparable to the duration of the optical excitation. This ultrafast demagnetization can even trigger an ultrafast, out of equilibrium, phase transition to a paramagnetic state. The reciprocal effect, namely an ultrafast remagnetization from the zero magnetization state, is a necessary ingredient to achieve a complete ultrafast reversal. However, the speed of remagnetization is limited by the universal critical slowing down which appears close to a phase transition. Here we demonstrate that magnetization can be reversed in a few hundreds of femtoseconds by overcoming the critical slowing down thanks to ultrafast spin cooling and spin heating mechanisms. We foresee that these results outline the potential of ultrafast spintronics for future ultrafast and energy efficient magnetic memory and storage devices. Furthermore, this should motivate further theoretical works in the field of femtosecond magnetization reversal.

Perspectives on field-free spin–orbit torque devices for memory and computing applications

The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing systems with improved performance, energy efficiency, lower cost, and unconventional computing capabilities. While the initial interest in the existing generation of MRAM—which is based on the spin-transfer torque (STT) effect in ferromagnetic tunnel junctions—was driven by its nonvolatile data retention and lower cost of integration compared to embedded Flash (eFlash), the focus of MRAM research and development efforts is increasingly shifting toward alternative write mechanisms (beyond STT) and new materials (beyond ferromagnets) in recent years. This has been driven by the need for better speed vs density and speed vs endurance trade-offs to make MRAM applicable to a wider range of memory markets, as well as to utilize the potential of MRAM in various unconventional computing architectures that utilize the physics of nanoscale magnets. In this Perspective, we offer an overview of spin–orbit torque (SOT) as one of these beyond-STT write mechanisms for the MRAM devices. We discuss, specifically, the progress in developing SOT-MRAM devices with perpendicular magnetization. Starting from basic symmetry considerations, we discuss the requirement for an in-plane bias magnetic field which has hindered progress in developing practical SOT-MRAM devices. We then discuss several approaches based on structural, magnetic, and chiral symmetry-breaking that have been explored to overcome this limitation and realize bias-field-free SOT-MRAM devices with perpendicular magnetization. We also review the corresponding material- and device-level challenges in each case. We then present a perspective of the potential of these devices for computing and security applications beyond their use in the conventional memory hierarchy.

A congestion-aware hybrid SRAM and STT-RAM buffer design for network-on-chip router

Network-on-chip (NoC) offers a scalable and flexible communication infrastructure for many-cores systems. Buffers in router is used for fine-grain flow control and Quality of Service (QoS), yet it is the major contributor of area and power consumption. In this paper, we propose a hybrid buffer design with SRAM and Spin-Torque Transfer Magnetic RAM (STT-RAM) for NoC router leveraging a novel architecture combined Virtual Channel (VC) and Virtual Output Queuing (VOQ) to store congested and uncongested flow separately. Experiments demonstrates that the proposed scheme can achieve 11.8% network performance improvement and 32.9% power saving with only 8.2% area overhead degradation compared to conventional SRAM based buffer design.

Current-Induced Reversible Split of Elliptically Distorted Skyrmions in Geometrically Confined Fe3 Sn2 Nanotrack.

Skyrmions are swirling spin textures with topological characters promising for future spintronic applications. Skyrmionic devices typically rely on the electrical manipulation of skyrmions with a circular shape. However, manipulating elliptically distorted skyrmions can lead to numerous exotic magneto-electrical functions distinct from those of conventional circular skyrmions, significantly broadening the capability to design innovative spintronic devices. Despite the promising potential, its experimental realization so far remains elusive. In this study, the current-driven dynamics of the elliptically distorted skyrmions in geometrically confined magnet Fe3 Sn2 is experimentally explored. This study finds that the elliptical skyrmions can reversibly split into smaller-sized circular skyrmions at a current density of 3.8× 1010 A m-2 with the current injected along their minor axis. Combined experiments with micromagnetic simulations reveal that this dynamic behavior originates from a delicate interplay of the spin-transfer torque, geometrical confinement, and pinning effect, and strongly depends on the ratio of the major axis to the minor axis of the elliptical skyrmions. The results indicate that the morphology is a new degree of freedom for manipulating the current-driven dynamics of skyrmions, providing a compelling route for the future development of spintronic devices.

Self-consistent computation of spin torques and magneto-resistance in tunnel junctions and magnetic read-heads with metallic pinhole defects

A three-dimensional self-consistent spin transport model is developed, which includes both tunnelling transport, leading to tunnelling magneto-resistance, as well as metallic transport, leading to giant magneto-resistance. An explicit solution to the drift-diffusion model is also derived, which allows analysing the effect of both the reference and free layer thickness on the spin-transfer torque polarization and field-like coefficient. It is shown the model developed here can be used to compute the signal-to-noise ratio in realistic magnetic read-heads, where spin torque-induced fluctuations and instabilities limit the maximum operating voltage. The effect of metallic pinhole defects in the insulator layer is also analysed. Increasing the area covered by pinholes results in a rapid degradation of the magneto-resistance, following an inverse dependence. Moreover, the spin torque angular dependence becomes skewed, similar to that obtained in fully metallic spin valves, and the spin-transfer torque polarization decreases. The same results are obtained when considering tunnel junctions with a single pinhole defect, but decreasing cross-sectional area, showing that even a single pinhole defect can significantly degrade the performance of tunnel junctions and magnetic read-heads below the 40 nm node.

Properties of phthalocyanine dyads with N2@C60, CO@C60 and H2O@C60 endohedral fullerenes: An insight from density functional theory calculations

Density functional theory (DFT) calculations at the PBE-D2/DNP theoretical level were employed to study the bonding strength, geometries and some electronic properties of the dyads of phthalocyanines (MPcs, where M = 2H, Mn, Fe, Co, Ni, Cu, Zn) with N2@C60, CO@C60 and H2O@C60 endohedral fullerenes (EFs). All MPcs form stable complexes, where the binding energies span from −31.1 to −14.4 kcal/mol. The bonding pattern depends on the central atom, but not on the endohedral species. The charge transfer is always from MPc to EF. The common frontier orbital distribution, when HOMO is found totally on phthalocyanine molecule, whereas LUMO, on fullerene component, fulfills for most dyads, with the exception of MnPc-derived dyads, where both HOMO and LUMO are found completely on phthalocyanine system. The spin distribution and transfer within the systems incorporating open-shell phthalocyanine complexes (M = Mn, Co, Cu) strongly depends on the particular paramagnetic atom.

The magnetization reversal driven by spin-orbit-assisted spin-transfer torque

As the data writing scheme of magnetization reversal driven by spin-transfer torque can overcome the shortcomings of traditional magnetic-field writing mechanism, it has become a mainstream way of implementing information writing in magnetic random access memory. However, the explosive growth of information shows higher requirements for data storage and information processing, thus magnetic random access memories based on spin-transfer torque data writing method pose several issues, including barrier reliability and limited storage speed. Recent experimental studies have shown that the spin-orbit torque through the spin Hall effect or Rashba effect in heavy-metal/ferromagnetic bilayer structures has the potential advantages in overcoming these limitations. They can also be used to drive magnetization to achieve rapid reversal. Especially, the three-terminal magnetic tunnel junction separates data reading from writing current. It has the advantages of faster writing speed and better stability and thus becomes the most promising magnetic storage technique at present. The magnetization reversal driven by spin-orbit-assisted spin-transfer torque in a three-terminal magnetic tunnel junction is studied theoretically in this work. By linearizing the Landau-Lifshitz-Gilbert equation with the additional spin-transfer torque term and spin-orbit torque term in the spherical coordinates, two coupled differential equations and the new equilibrium directions are obtained. With the stability analysis of the new equilibrium directions, the phase diagrams defined in parameter space spanned by the current densities of spin-transfer and spin-orbit torques are established. There are several magnetic states in the phase diagrams, including quasi-parallel stable states, quasi-antiparallel stable states, and bistable states. By adjusting the current density of the spin-transfer torque, the magnetization reversal between two stable states is realized. It is found that the magnetization reversal time is greatly reduced with the assisting of spin-orbit torque, and it decreases with the augment of current density of spin-orbit torque. Meanwhile, the zero-field magnetization reversal can be realized through the interplay between spin-orbit torque and spin-transfer torque. In addition, compared with the damping-like term of spin-orbit torque, the field-like one plays a leading role in magnetization reversal. The presence of field-like term of spin-orbit torque can also reduce the reversal time that decreases with the increase of the ratio of field-like torque to damping-like one.