Spin-galvanic Effect Research Articles

Memcapacitors and Memristor Characteristics of ISGE-SOT and SHE-SOT Gain-Driven MoS2:Er Ferromagnets.

The enhancement of the spin-orbit torque (SOT) effect through the integration of intrinsic inverse spin galvanic effect spin-orbit torque and spin Hall effect spin-orbit torque is fundamentally dependent on the structural and material properties of the ferromagnets. Consequently, the synthesis of ferromagnets with superior structural integrity and material characteristics is of paramount importance. In this study, a gas-liquid chemical reaction, in conjunction with ultrasonic crushing, was employed to synthesize few-layer MoS2:Er nanosheets. X-ray diffraction, X-ray photoelectron spectroscopy, and energy-dispersive spectroscopy analyses confirm the successful substitution of Mo4+ by Er3+ through doping within the MoS2 lattice. Vibrating sample magnetometry and MT measurements indicate that MoS2:Er exhibits room-temperature ferromagnetism (RTFM), with the underlying mechanism elucidated through first-principles calculations. Furthermore, the unique electron density of states at the Fermi level suggests the presence of ferromagnetism in MoS2:Er. A wedge-shaped Pt/MoS2:Er/Au structure was fabricated and subsequently evaluated for current-induced SOT switching, as well as for its memcapacitor and memristor characteristics. The precession of a magnetic moment in three-dimensional space was successfully simulated by solving the Landau-Lifshitz-Gilbert-Slonczewski equation using the Mumax.

Inverse spin galvanic effect in proximitized superconductor/paramagnet systems

We show that the interplay between spin–orbit coupling (SOC) and the paramagnetic response of itinerant electrons in proximitized superconductor/paramagnet systems gives rise to the inverse spin galvanic effect, i.e., generation of magnetic moment under the influence of the charge current. Depending on the sign of the SOC constant and the system temperature, the corresponding contribution to the magnetic response of the superconductor can be either diamagnetic or paramagnetic. We discuss the relevance between the discovered phenomena and the recent experiments on Pt/Nb heterostructures as well as the puzzling sign change of the magnetic response observed in clean Ag coated Nb cylinders.

Current Induced Spin-Polarization in Chiral Molecules.

The inverse spin-galvanic effect or current-induced spin-polarization is mainly associated with interfaces between different layers in semiconducting heterostructures, surfaces of metals, and bulk semiconducting materials. Here, we theoretically predict that the inverse spin-galvanic effect should also be present in chiral molecules, as a result of the chiral induced spin selectivity effect. As proof-of-principle, we calculate the nonequilibrium properties of a model system that previously has been successfully used to explain a multitude of aspects related to the chiral induced spin selectivity effect. Here we show that current driven spin-polarization in a chiral molecule gives rise to a magnetic moment that is sensitive to external magnet field. The chiral molecule then behaves like a soft ferromagnet. This, in turn, suggests that magnetic permeability measurement in otherwise nonmagnetic systems may be used noninvasively to detect the presence of spin-polarized currents.

Generic model with unconventional Rashba bands and giant spin galvanic effect

Generic model with unconventional Rashba bands and giant spin galvanic effect

Nonreciprocal superconducting transport and the spin Hall effect in gyrotropic structures

The search for superconducting systems exhibiting nonreciprocal transport and, specifically, the diode effect, has proliferated in recent years. This trend has encompassed a wide variety of systems, including planar hybrid structures, asymmetric SQUIDs, and certain noncentrosymmetric superconductors. A common feature of such systems is a gyrotropic symmetry, realized on different scales and characterized by a polar vector. Alongside time-reversal symmetry breaking, the presence of a polar axis allows for magnetoelectric effects, which, when combined with proximity-induced superconductivity, results in spontaneous non-dissipative currents that underpin the superconducting diode effect. With this symmetry established, we present a comprehensive theoretical study of transport in a lateral Josephson junction composed of a normal metal supporting the spin Hall effect, and attached to a ferromagnetic insulator. Due to the presence of the latter, magnetoelectric effects arise without requiring external magnetic fields. We determine the dependence of the anomalous currents on the spin relaxation length and the transport parameters commonly used in spintronics to characterize the interface between the metal and the ferromagnetic insulator. Therefore, our theory naturally unifies nonreciprocal transport in superconducting systems with classical spintronic effects, such as the spin Hall effect, spin galvanic effect, and spin Hall magnetoresistance. We propose an experiment involving measurements of magnetoresistance in the normal state and nonreciprocal transport in the superconducting state. Such experiment would, on the one hand, allow for determining the parameters of the model and thus verifying with a greater precision the theories of magnetoelectric effects in normal systems. On the other hand, it would contribute to a deeper understanding of the underlying microscopic origins that determine these parameters.

Tuning spin-orbit coupling and realizing inverse persistent spin helix by an extra above-barrier radiation in a GaAs/Al0.3Ga0.7As heterostructure.

A persistent spin helix with equal strength of the Rashba and Dresselhaus spin-orbit coupling (SOC) is expected for future spintronic devices due to the suppression of spin relaxation. In this work we investigate the optical tuning of the Rashba and Dresselhaus SOC by monitoring the spin-galvanic effect (SGE) in a GaAs/Al0.3Ga0.7As two dimensional electron gas. An extra control light above the bandgap of the barrier is introduced to tune the SGE excited by a circularly polarized light below the bandgap of GaAs. We observe different tunability of the Rashba- and Dresselhaus-related SGE currents and extract the ratio of the Rashba and Dresselhaus coefficients. It decreases monotonously with the power of the control light and reaches a particular value of ∼-1, implying the formation of the inverse persistent spin helix state. By analyzing the optical tuning process phenomenologically and microscopically, we reveal greater optical tunability of the Rashba SOC than that of the Dresselhaus SOC.

Orbital angular momentum for spintronics

A novel platform for spin manipulation utilizing the orbital angular momentum (OAM) is preparing the next innovation of spintronics. Analogous to the generation of the spins by the inverse spin Galvanic effect, we could construct a nonzero OAM at surfaces and interfaces with the structural inversion asymmetry or in centrosymmetric bulks. However, all these generation mechanisms are irrelevant to the spin–orbit coupling (SOC) strength, presenting the distinction from the spin generation mechanisms. The nonzero OAM could be utilized for highly efficient spin manipulation, supported by several recent experimental reports. These reports indicate that light metal elements are also useful for OAM-induced spin manipulation. Also, the collaborative spin manipulation by the OAM and the spin angular momentum (SAM) opens an alternative mechanism. Here we review experimental and theoretical new findings on the OAM-induced or OAM–assisted spin manipulation. All these new findings indicate that the OAM-induced spin manipulation opens the door to novel spintronics in terms of mechanism and materials.

High-resolution diffraction reveals magnetoelastic coupling and coherent phase separation in tetragonal CuMnAs

Tetragonal CuMnAs was the first antiferromagnet where reorientation of the N\'eel vector was reported to occur by an inverse spin galvanic effect. A complicating factor in the formation of phase-pure tetragonal CuMnAs is the formation of an orthorhombic phase with nearly the same stoichiometry. Pure-phase tetragonal CuMnAs has been reported to require an excess of Cu to maintain a single phase in traditional solid state synthesis reactions. Here we show that subtle differences in diffraction patterns signal pervasive inhomogeneity and phase separation, even in Cu-rich ${\mathrm{Cu}}_{1.18}{\mathrm{Mn}}_{0.82}\mathrm{As}$. From calorimetry and magnetometry measurements, we identify two transitions corresponding to the N\'eel temperature (${T}_{N}$) and an antiferromagnet to weak ferromagnet transition in ${\mathrm{Cu}}_{1.18}{\mathrm{Mn}}_{0.82}\mathrm{As}$ and ${\mathrm{CuMn}}_{0.964}{\mathrm{As}}_{1.036}$. These transitions have clear crystallographic signatures, directly observable in the lattice parameters upon in situ heating and cooling. The immiscibility and phase separation could arise from a spinoidal decomposition that occurs at high temperatures, and the presence of a ferromagnetic transition near room temperature warrants further investigation of its effect on the electrical switching behavior.

Resolving spin currents and spin densities generated by charge-spin interconversion in systems with reduced crystal symmetry

The ability to control the generation of spins in arbitrary directions is a long-sought goal in spintronics. Charge to spin interconversion (CSI) phenomena depend strongly on symmetry. Systems with reduced crystal symmetry allow anisotropic CSI with unconventional components, where charge and spin currents and the spin polarization are not mutually perpendicular to each other. Here, we demonstrate experimentally that the CSI in graphene-WTe2 induces spins with components in all three spatial directions. By performing multi-terminal nonlocal spin precession experiments, with specific magnetic fields orientations, we discuss how to disentangle the CSI from the spin Hall and inverse spin galvanic effects.

Connections between spin-orbit torques and unidirectional magnetoresistance in ferromagnetic-metal–heavy-metal heterostructures

We investigate the connections between current-induced spin-orbit torques and unidirectional magnetoresistance (UMR) by performing second harmonic longitudinal resistance measurements on Co/Pt bilayer with magnetic-field ${\ensuremath{\mu}}_{0}H$ up to 10 T and temperature $T$ down to 2 K. The fieldlike torque ${h}_{\mathrm{FL}}$ changes sign with varying Co thickness ${t}_{\mathrm{Co}}$, which indicates that competing mechanisms, i.e., the spin Hall effect (SHE) and the inverse spin galvanic effect (iSGE), are responsible for the generation of ${h}_{\mathrm{FL}}$. The sign of ${h}_{\mathrm{FL}}$ coincides with the sign of UMR induced by spin-dependent scattering. However, the dampinglike torque ${h}_{\mathrm{DL}}$ is proportional to the inverse Co thickness, with no sign reversal for all measured temperatures and ${t}_{\mathrm{Co}}$, indicating that ${h}_{\mathrm{DL}}$ originates solely from the SHE. The generation of ${h}_{\mathrm{DL}}$ via iSGE can be further excluded because of the observation of an $H$-linear dependence of UMR, which, in turn, indicates the negligible exchange coupling between spin accumulation and ferromagnetic metal.

Spin accumulation in metallic thin films induced by electronic impurity scattering

In order to explore the spin accumulation, evaluating the spin galvanic and spin Hall effect, we utilize the semi-classical Boltzmann equation based on input from the relativistic Korringa-Kohn-Rostoker Green's function method, within the density functional theory. We calculate the spin accumulation including multiple contributions, especially skew-scattering (scattering-in term) and compare this to three different approximations, which include the isotropic and anisotropic relaxation time approximation. For heavy metals, with strong intrinsic spin-orbit coupling, we find that almost all the effects are captured within the anisotropic relaxation time approximation. On the other hand, in light metals the contributions from the vertex corrections (scattering-in term) are comparable to the induced effect in anisotropic relaxation time approximation. We put a particular focus on the influence of the atomic character of the substitutional impurities on the spin accumulation as well as the dependence on the impurity position. As impurities will break space inversion symmetry of the thin film, this will give rise to both symmetric and antisymmetric contributions to the spin accumulation. In general, we find the impurities at the surface generate the largest efficiency of charge-to-spin conversion in case of the spin accumulation. Comparing our results to existing experimental findings for Pt we find a good agreement.

Large spin-charge interconversion induced by interfacial spin-orbit coupling in a highly conducting all-metallic system

Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has been a common issue to properly quantify the spin-charge interconversion in these systems, being the case of Au paradigmatic. Here, we obtain a large spin-charge interconversion at a highly conducting Au/Cu interface which is experimentally shown to arise from the inverse spin galvanic effect of the interface and not from the spin Hall effect of bulk Au. We use two parameters independent of the microscopic details to properly quantify the spin-charge interconversion and the spin losses due to the interfacial spin-orbit coupling, providing an adequate benchmarking to compare with any spin-charge interconversion system. The good performance of this metallic interface, not based in Bi, opens the path to the use of much simpler light/heavy metal systems.

Spin Hall and inverse spin galvanic effects in graphene with strong interfacial spin-orbit coupling: A quasi-classical Green's function approach

van der Waals heterostructures assembled from atomically thin crystals are ideal model systems to study spin-orbital coupled transport because they exhibit a strong interplay between spin, lattice and valley degrees of freedom that can be manipulated by strain, electric bias and proximity effects. The recently predicted spin-helical regime in graphene on transition metal dichalcogenides, in which spin and pseudospin degrees of freedom are locked together [M. Offidani et al. Phys. Rev. Lett. 119, 196801 (2017)], suggests their potential application in spintronics. Here, by deriving an Eilenberger equation for the quasiclassical Green's function of two-dimensional Dirac fermions in the presence of} spin-orbit coupling\textcolor{black}{{} (SOC) and scalar disorder, we obtain analytical expressions for the dc spin galvanic susceptibility and spin Hall conductivity in the spin-helical regime. Our results disclose a sign change in the spin Hall angle (SHA) when the Fermi energy relative to the Dirac point matches the Bychkov-Rashba energy scale, irrespective of the magnitude of the spin-valley interaction imprinted on the graphene layer. The behavior of the SHA is connected to a reversal of the total internal angular momentum of Bloch electrons that reflects the spin-pseudospin entanglement induced by SOC. We also show that the charge-spin conversion reaches a maximum when the Fermi level lies at the edge of the spin-minority band in agreement with previous findings. Both features are fingerprints of spin-helical Dirac fermions and suggest a direct way to estimate the strength of proximity-induced SOC from transport data. The relevance of these findings for interpreting recent spin-charge conversion measurements in nonlocal spin-valve geometry is also discussed.

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

The ability to engineer new states of matter and control their spintronic properties by electric fields is at the heart of future information technology. Here, we report a gate-tunable spin-galvanic effect in van der Waals heterostructures of graphene with a semimetal of molybdenum ditelluride at room temperature due to an efficient spin-charge conversion process. Measurements in different device geometries with control over the spin orientations exhibit spin-switch and Hanle spin precession behavior, confirming the spin origin of the signal. The control experiments with the pristine graphene channels do not show any such signals. We explain the experimental spin-galvanic signals by theoretical calculations considering the spin-orbit induced spin-splitting in the bands of the graphene in the heterostructure. The calculations also reveal an unusual spin texture in graphene heterostructure with an anisotropic out-of-plane and in-plane spin polarization. These findings open opportunities to utilize graphene-based heterostructures for gate-controlled spintronic devices.

Highly Tunable Spin-Orbit Torque and Anisotropic Magnetoresistance in a Topological Insulator Thin Film Attached to Ferromagnetic Layer.

We investigate spin-charge conversion phenomena in hybrid structures of topological insulator thin films and magnetic insulators. We find an anisotropic inverse spin-galvanic effect that yields a highly tunable spin-orbit torque. Concentrating on the quasiballistic limit, we also predict a giant anisotropic magnetoresistance at low dopings. These effects, which have no counterparts in thick topological insulators, depend on the simultaneous presence of the hybridization between the surface states and the in-plane magnetization. Both the inverse spin-galvanic effect and anisotropic magnetoresistance exhibit a strong dependence on the magnetization and the Fermi level position and can be used for spintronics and spin-orbit-torque-based applications at the nanoscale.

Harnessing Orbital-to-Spin Conversion of Interfacial Orbital Currents for Efficient Spin-Orbit Torques.

Current-induced spin-orbit torques (SOTs) allow for the efficient electrical manipulation of magnetism in spintronic devices. Engineering the SOT efficiency is a key goal that is pursued by maximizing the active interfacial spin accumulation or modulating the nonequilibrium spin density that builds up through the spin Hall and inverse spin galvanic effects. Regardless of the origin, the fundamental requirement for the generation of the current-induced torques is a net spin accumulation. We report on the large enhancement of the SOT efficiency in thulium iron garnet (TmIG)/Pt by capping with a CuO_{x} layer. Considering the weak spin-orbit coupling (SOC) of CuO_{x}, these surprising findings likely result from an orbital current generated at the interface between CuO_{x} and Pt, which is injected into the Pt layer and converted into a spin current by strong SOC. The converted spin current decays across the Pt layer and exerts a "nonlocal" torque on TmIG. This additional torque leads to a maximum colossal enhancement of the SOT efficiency of a factor 16 for 1.5nm of Pt at room temperature, thus opening a path to increase torques while at the same time offering insights into the underlying physics of orbital transport, which has so far been elusive.

Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature

Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate-tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a non-equilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.

Proposal for Unambiguous Electrical Detection of Spin-Charge Conversion in Lateral Spin Valves.

Efficient detection of spin-charge conversion is crucial for advancing our understanding of emergent phenomena in spin-orbit-coupled nanostructures. Here, we provide a proof of principle of an electrical detection scheme of spin-charge conversion that enables full disentanglement of competing spin-orbit coupling (SOC) transport phenomena in diffusive lateral channels, i.e., the inverse spin Hall effect and the spin galvanic effect. A suitable geometry in an applied oblique magnetic field is shown to provide direct access to SOC transport coefficients through a symmetry analysis of the output nonlocal resistance. The scheme is robust against tilting of the spin-injector magnetization, disorder, and spurious non-spin-related contributions to the nonlocal signal and can be used to probe spin-charge conversion effects in both spin-valve and hybrid optospintronic devices.

Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature.

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS2 and graphene, which allows for a strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac nature of the spectrum intact across electron and hole sectors. The reversible electrical generation and control of the nonequilibrium spin polarization vector, not previously observed in a nonmagnetic material, are elegant manifestations of emergent two-dimensional Dirac Fermions with robust spin-helical structure. Our experimental findings, supported by first-principles relativistic electronic structure and transport calculations, demonstrate a route to design low-power spin-logic circuits from layered materials.

Magnonic analog of the Edelstein effect in antiferromagnetic insulators

We investigate the nonequilibrium spin polarization due to a temperature gradient in antiferromagnetic insulators, which is the magnonic analogue of the inverse spin-galvanic effect of electrons. We derive a linear response theory of a temperature-gradient-induced spin polarization for collinear and noncollinear antiferromagnets, which comprises both extrinsic and intrinsic contributions. We apply our theory to several noncentrosymmetric antiferromagnetic insulators, i.e., to a one-dimensional antiferromagnetic spin chain, a single layer of kagome noncollinear antiferromagnet, e.g., $\text{KFe}_3(\text{OH})_6(\text{SO}_4)_2$, and a noncollinear breathing pyrochlore antiferromagnet, e.g., LiGaCr$_4$O$_8$. The shapes of our numerically evaluated response tensors agree with those implied by the magnetic symmetry. Assuming a realistic temperature gradient of $10 \text{K}/\text{mm}$, we find two-dimensional spin densities of up to $\sim 10^6\hbar/\text{cm}^2$ and three-dimensional bulk spin densities of up to $\sim 10^{14}\hbar/\text{cm}^3$, encouraging an experimental detection.