Highly Tunable Spin-Orbit Torque and Anisotropic Magnetoresistance in a Topological Insulator Thin Film Attached to Ferromagnetic Layer.

Abstract

We investigate spin-charge conversion phenomena in hybrid structures of topological insulator thin films and magnetic insulators. We find an anisotropic inverse spin-galvanic effect that yields a highly tunable spin-orbit torque. Concentrating on the quasiballistic limit, we also predict a giant anisotropic magnetoresistance at low dopings. These effects, which have no counterparts in thick topological insulators, depend on the simultaneous presence of the hybridization between the surface states and the in-plane magnetization. Both the inverse spin-galvanic effect and anisotropic magnetoresistance exhibit a strong dependence on the magnetization and the Fermi level position and can be used for spintronics and spin-orbit-torque-based applications at the nanoscale.