Spin Current Research Articles

Reconfigurable Chiral Spintronic THz Emitters

AbstractCollective spin arrangements manifest diverse spin textures, encompassing ferromagnetism, antiferromagnetism, and chiral vortices. However, mapping these spin textures in ultrathin magnetic multilayers has remained elusive. A reconfigurable chiral spintronic terahertz emission method is introduced through investigations on a model system of synthetic antiferromagnet and the spin information of individual ferromagnet (FM) layers is extracted. Upon femtosecond photoexcitation of the synthetic antiferromagnet (FM1/Ru/FM2), the ferromagnets generate a pair of linearly polarized ultrafast spin currents, which, after relaxation at the FM/Ru interface, emit corresponding THz pulses. The Ruderman–Kittel–Kasuya–Yosida interactions between the two FMs give rise to magnetic‐field‐controlled spin textures causing a spin relaxation imbalance at the interfaces and induce a phase shift between the orthogonal components of the emitted terahertz fields, consequently reconfiguring the polarization of the emitted terahertz field from linear to circular. This approach offers a novel means of investigating electronic and magnetic states in ultrathin spintronic heterostructures, low‐dimensional quantum materials, topological insulators, and Weyl semimetals. Furthermore, it enables the exploration of spin textures, including skyrmions, merons, and solitons.

The Schwinger-Keldysh coset construction

The coset construction is a tool for systematically building low energy effective actions for Nambu-Goldstone modes. This technique is typically used to compute time-ordered correlators appropriate for S-matrix computations for systems in their ground state. In this paper, we extend this technique to the Schwinger-Keldysh formalism, which enables one to calculate a wider variety of correlators and applies also to systems in a mixed state. We focus our attention on internal symmetries and demonstrate that, after identifying the appropriate symmetry breaking pattern, Schwinger-Keldysh effective actions for Nambu-Goldstone modes can be constructed using the standard rules of the coset construction. Particular emphasis is placed on the thermal state and ensuring that correlators satisfy the KMS relation. We also discuss explicitly the power counting scheme underlying our effective actions. We comment on the similarities and differences between our approach and others that have previously appeared in the literature. In particular, our prescription does not require the introduction of additional “diffusive” symmetries and retains the full non-linear structure generated by the coset construction. We conclude with a series of explicit examples, including a computation of the finite-temperature two-point functions of conserved spin currents in non-relativistic paramagnets, antiferromagnets, and ferromagnets. Along the way, we also clarify the discrete symmetries that set antiferromagnets apart from ferromagnets, and point out that the dynamical KMS symmetry must be implemented in different ways in these two systems.

Stability and causality of rest frame modes in second-order spin hydrodynamics

We analyze the low- and high-momentum rest frame modes in the second-order spin hydrodynamics and check the asymptotic causality of the theory. A truncation scheme of the Israel-Stewart formalism derived in our earlier work is proposed that extends the minimal causal formulation. It consists of altogether 40 interconnected relaxation-type dynamical equations—16 (24) of them correspond to the independent components of the energy-momentum (spin) tensor. Similarly to previous studies, we find that the stability of the perturbations and asymptotic causality require using the spin equation of state that satisfies the generalized Frenkel condition demanding that the “electric” and “magnetic” components of the spin density tensor have opposite signs. For low-momentum modes this behavior is similar to that found earlier for the first-order (Navier-Stokes) spin hydrodynamics. Published by the American Physical Society 2024

Field-free switching of perpendicular magnetization in a noncollinear antiferromagnetic Mn3Sn/[Pt/Co]4 heterostructure

Spin-orbit torque (SOT) manipulation of perpendicular magnetization is essential for realizing spintronic storage and logic devices. When a charge current flows through a heavy metal/ferromagnetic layer structure, a spin current can be generated by the heavy metal and injects into the ferromagnetic layer with perpendicular magnetic anisotropy and switch its magnetization via the SOT. However, in order to realize the deterministic switching, an in-plane external magnetic field is needed to break the inversion symmetry, a technological requirement that hampers the practical application of SOT. Pt/Co multilayer is a good magnetic recording media and, thus, the all-electric manipulation of its perpendicular magnetic moments is of practical significance. The noncollinear spin structure in Mn3Sn allows an unconventional spin polarization direction, and the associated SOT can switch the magnetic moments in the absence of an external field. In this work, we demonstrate the field-free SOT switching of a heterostructure utilizing Mn3Sn and Pt/Co multilayer as the spin source and the ferromagnetic layer with perpendicular magnetization, respectively. Our results are important for advancing the development of spintronic devices based on noncollinear antiferromagnets.

Second-order charge and spin transport in LaO/STO system in the presence of cubic Rashba spin orbit couplings

Under an applied electric field, certain non-centrosymmetric materials with broken time-reversal symmetry may exhibit non-reciprocal transport behavior in which the charge and spin currents contain components that are second order in the electric field. In this study, we investigate the second-order spin accumulation and charge and spin responses in the LaAlO3/SrTiO3 (LaO/STO) system with magnetic dopants under the influence of linear and cubic Rashba spin–orbit coupling (RSOC) terms. We explain the physical origin of the second-order response and perform a symmetry analysis of the first- and second-order responses for different dopant magnetization directions relative to the applied electric field. We then numerically solve the Boltzmann transport equation by extending the approach of Schliemann and Loss (2003 Phys. Rev. B 68 165311) to higher orders in the electric field. We show that the sign of the second-order responses can be switched by varying the magnetization direction of the magnetic dopants or relative strengths of the two cubic RSOC terms and explain these trends by considering the Fermi surfaces of the respective systems. These findings provide insights into the interplay of multiple SOC effects in the LaO/STO system and how the resulting first- and second-order charge and spin responses can be engineered by exploiting the symmetries of the system.

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

We investigate the excitonic species in WS2 monolayers transferred onto III–V semiconductor substrates with different surface treatments. When the III–V substrates were covered with amorphous native oxides, negatively charged excitons dominated the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III–V substrates were reduced, neutral excitons began to dominate the spectral weight, indicating a reduction in the electron density in the WS2 monolayers. The removal of the native oxides enhanced the electron transfer from the WS2 monolayer to the III–V substrate. In addition, an additional shoulder-like PL feature appeared ∼50 meV below the emission of neutral excitons, which can be attributed to the emission of localized excitons. When the III–V substrate surface was passivated by sulfur after the reduction of the native oxides, neutral excitons still dominated the spectral weight. However, the low-energy PL shoulder disappeared again, suggesting the effective delocalization of excitons through substrate surface passivation. Surface engineering of the semiconductor substrates for two-dimensional (2D) materials can provide a novel approach to control the carrier density of the 2D materials, implement deterministic carrier localization or delocalization for the 2D materials, and facilitate the interlayer transfer of charge, spin, and valley currents. These findings open the avenue for novel device concepts and phenomena in mixed-dimensional semiconductor heterostructures.

Inverse Spin-Hall Effect and Spin Swapping in Spin-Split Superconductors.

When a spin-splitting field is introduced to a thin film superconductor, the spin currents polarized along the field couples to energy currents that can only decay via inelastic scattering. We study spin and energy injection into such a superconductor where spin-orbit impurity scattering yields inverse spin-Hall and spin-swapping currents. We show that the combined presence of a spin-splitting field, superconductivity, and inelastic scattering gives rise to a strong enhancement of the ordinary inverse spin-Hall effect, as well as unique inverse spin-Hall and spin-swapping signals orders of magnitude stronger than the ordinary inverse spin-Hall signal. These can be completely controlled by the orientation of the spin-splitting field, resulting in a long-range charge and spin accumulations detectable much further from the injector than in the normal state. While the enhanced inverse spin-Hall signals offer a major improvement in spin detection sensitivity, the unique spin-swap signals can be utilized for designing devices where both the spin and current directions are controlled and altered throughout the geometry.

Exciton spin Hall effect in arc-shaped strained WSe2

Generating a pure spin current using electrons, which have degrees of freedom beyond spin, such as electric charge and valley index, presents challenges. In response, we propose a mechanism based on intervalley exciton dynamics in strained transition metal dichalcogenides (TMDs) to achieve the in an electrically insulating regime, without the need for an external electric field. The interplay between strain gradients and strain-induced pseudomagnetic fields results in a net Lorentz force on long-lived intervalley excitons in WSe2, carrying nonzero spin angular momentum. This process generates an exciton-mediated pure spin Hall current, resulting in opposite-sign spin accumulations and local magnetization on the two sides of the single-layer arc-shaped TMD. We demonstrate that the magnetic field induced by spin accumulation, at approximately ∼mT, can be detected using techniques such as superconducting quantum interference magnetometry or spatially resolved magneto-optical Faraday and Kerr rotations. Published by the American Physical Society 2024

Effects of tensor spin polarization on the chiral restoration and deconfinement phase transitions

Effects of tensor spin polarization (TSP) on the chiral restoration and deconfinement phase transitions are studied in Polyakov loop extended Nambu–Jona-Lasinio (PNJL) model. For chiral phase transition, the higher the polarized degree of quark-antiquark pairs under the strong magnetic field, the higher the phase transition temperature. The TSP corrects the position of the critical end point. The small impact of TSP on the phase transition temperature is found for the deconfinement phase transition. On the other hand, we divide the phase space into three ranges based on the phase diagram obtained from the PNJL model: the confinement phase with chiral symmetry broken, the deconfinement phase with restored chiral symmetry, and the confinement phase with restored chiral symmetry (quarkyonic phase). It is found that TSP has only a very small effect on the anisotropic pressure in the deconfined phase with chiral symmetry restored and the quarkyonic phase, but it has a very strong effect on the anisotropic pressure in the confined phase with chiral symmetry broken. This is because TSP is closely related to chiral symmetry. The restoration of chiral symmetry means the dissociation of spin polarization condensate. Published by the American Physical Society 2024

Origin of the light-induced spin currents in heavy metal/magnetic insulator bilayers.

Light-induced spin currents with the faster response is essential for the more efficient information transmission and processing. Herein, we systematically explore the effect of light illumination energy and direction on the light-induced spin currents in the W/Y3Fe5O12 heterojunction. Light-induced spin currents can be clearly categorized into two types. One is excited by the low light intensity, which mainly involves the photo-generated spin current from spin photovoltaic effect. The other is caused by the high light intensity, which is the light-thermally induced spin current and mainly excited by spin Seebeck effect. Under low light-intensity illumination, light-thermally induced temperature gradient is very small so that spin Seebeck effect can be neglected. Furthermore, the mechanism on spin photovoltaic effect is fully elucidated, where the photo-generated spin current in Y3Fe5O12 mainly originates from the process of spin precession induced by photons. These findings provide some deep insights into the origin of light-induced spin current.

Modulating spin current induced effective damping in β–W/Py heterostructures by a systematic variation in resistivity of the sputtered deposited β–W films

Utilizing the spin-induced pumping from a ferromagnet (FM) into a heavy metal (HM) under the ferromagnetic resonance (FMR) condition, we report an enhancement in effective damping in β- W/Py bilayers by systematically varying resistivity (ρ W ) of β-W films. Different resistivity ranging from 100 μΩ-cm to 1400 μΩ-cm with a thickness of 8 nm can be achieved by varying the argon pressure (P Ar ) during the growth by the method of sputtering. The coefficient of effective damping α eff is observed to increase from 0.010 to 0.025 with ρ W , which can be modulated by P Ar . We observe a modest dependence of α eff on the sputtering power (p S ) while keeping the P Ar constant. α eff dependence on both P Ar and p S suggests that there exists a strong correlation between α eff and ρ W . It is thus possible to utilize ρ W as a tuning parameter to regulate the α eff , which can be advantageous for faster magnetization dynamics switching. The thickness dependence study of Py in the aforementioned bilayers manifests a higher spin mixing conductance ( geff↑↓ ) which suggests a strong spin pumping from Py into the β-W layer. The effective spin current (J S(eff)) is also evaluated by considering the spin-back flow in this process. Intrinsic spin mixing conductance ( gW↑↓ ) and spin diffusion length (λ SD ) of β-W are additionally investigated using thickness variations in β-W. Furthermore, the low-temperature study in β-W/Py reveals an intriguing temperature dependence in α eff which is quite different from α b of single Py layer and the enhancement in α eff at low temperature can be attributed to the spin-induced pumping from Py layer into β-W.

Artificial Neuron Based on the Bloch-Point Domain Wall in Ferromagnetic Nanowires.

Nanomagnetism and spintronics are currently active areas of research, with one of the main goals being the creation of low-energy-consuming magnetic memories based on nanomagnet switching. These types of devices could also be implemented in neuromorphic computing by crafting artificial neurons (ANs) that emulate the characteristics of biological neurons through the implementation of neuron models such as the widely used leaky integrate-and-fire (LIF) with a refractory period. In this study, we have carried out numerical simulations of a 120 nm diameter, 250 nm length ferromagnetic nanowire (NW) with the aim of exploring the design of an artificial neuron based on the creation and destruction of a Bloch-point domain wall. To replicate signal integration, we applied pulsed trains of spin currents to the opposite faces of the ferromagnetic NW. These pulsed currents (previously studied only in the continuous form) are responsible for inducing transitions between the stable single vortex (SV) state and the metastable Bloch point domain wall (BP-DW) state. To ensure the system exhibits leak and refractory properties, the NW was placed in a homogeneous magnetic field of the order of mT in the axial direction. The suggested configuration fulfills the requirements and characteristics of a biological neuron, potentially leading to the future creation of artificial neural networks (ANNs) based on reversible changes in the topology of magnetic NWs.

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In this paper we investigate the effect of a topological defect, such as a screw dislocation in an α\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha$$\\end{document}-T3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$T_3$$\\end{document} Aharonov–Bohm quantum ring and scrutinized the effects of an external transverse magnetic field and Rashba spin-orbit coupling therein. The screw dislocation yields an effective flux which reshape the periodic oscillations in the persistent current in both charge and spin sectors, with a period equal to one flux quantum. Moreover, they suffer a phase shift proportional to the degree of dislocation, and include scattering effects due to the dislocation present in the system. Such tunable oscillation of the spin persistent current highlights applications of our system as potential spintronic devices. Further, the behaviour of the current induced by the Burgers vector (bz\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$b^z$$\\end{document}) which denotes the strength of the dislocation is investigated in the absence and presence of an external magnetic field. In both the scenarios, an almost linear decrease in the current profile as a function of the Burgers vector is observed. Notably, without the external magnetic field, the Burgers current suffers a back flow for α=1\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha =1$$\\end{document} (dice lattice), while in the presence of the external magnetic field, for other values of α\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha$$\\end{document} (e.g., α=0.5\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha =0.5$$\\end{document}) this back flow occurs for a specific value of bz\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$b^z$$\\end{document}. Additionally, the presence of the distortion induces a chirality effect, giving rise to an additional chiral current even in the absence of an external field. Furthermore, in the absence of field, the Burgers spin current initially rises, attains a maximum before diminishing as bz\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$b^z$$\\end{document} is enhance for all values of α\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha$$\\end{document}. However, such a non-monotonicity in the Burgers spin current is conspicuously non-existent in the presence of an external field. The chiral current discussed above may hold important applications to spintronics.

Evidence for Magnetic Crystallization Waves at the Surface of 3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^3$$\\end{document}He Crystal

Ultralow temperature crystals of the helium isotopes 3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^3$$\\end{document}He and 4\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}He are intriguing quantum systems. Deciphering the complex features of these unusual materials has been made possible in large part by Alexander Andreev’s groundbreaking research. In 1978, Andreev and Alexander Parshin predicted the existence of melting/freezing waves at the surface of a solid 4\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}He crystal, which was subsequently promptly detected. Successively, for the fermionic 3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^3$$\\end{document}He superfluid/solid interface, even more intricate crystallization waves were anticipated, although they have not been observed experimentally so far. In this work, we provide preliminary results on 3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^3$$\\end{document}He crystals at the temperature T=0.41\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$T = 0.41$$\\end{document} mK, supporting the existence of spin supercurrents in the melting/freezing waves on the crystal surface below the antiferromagnetic ordering temperature TN=0.93\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$T_N= 0.93$$\\end{document} mK, as predicted by Andreev. The spin currents that accompany such a melting-freezing wave make it a unique object, in which the inertial mass is distinctly different from the gravitational mass.

Enhanced Spin–Orbit Torques in Graphene by Pt Adatoms Decoration

Abstract Graphene (Gr) with widely acclaimed characteristics, such as exceptionally long spin diffusion length at room temperature, provides an outstanding platform for spintronics. However, its inherent weak spin–orbit coupling (SOC) has limited its efficiency for generating the spin currents in order to control the magnetization switching process for applications in spintronics memories. Following the theoretical prediction on the enhancement of SOC in Gr by heavy atoms adsorption, here we experimentally observe a sizeable spin–orbit torques (SOTs) in Gr by the decoration of its surface with Pt adatoms in Gr/Pt(t Pt)/FeNi trilayers with the optimal damping-like SOT efficiency around 0.55 by 0.6-nm-thick Pt layer adsorption. The value is nearly four times larger than that of the Pt/FeNi sample without Gr and nearly twice the value of the Gr/FeNi sample without Pt adsorption. The efficiency of the enhanced SOT in Gr by Pt adatoms is also demonstrated by the field-free SOT magnetization switching process with a relatively low critical current density around 5.4 MA/cm2 in Gr/Pt/FeNi trilayers with the in-plane magnetic anisotropy. These findings pave the way for Gr spintronics applications, offering solutions for future low power consumption memories.

Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction

We investigate the optoelectronic spin and spin-valley transports and magnetoresistance (MR) effect in a graphene-based junction. The results show that by modulating the direction of an electric field, the off state and the on state with fully spin-polarized currents can be realized for both parallel (P) and antiparallel (AP) magnetization configurations, because the spin-polarized directions between two antiferromagnetic (AFM) regions are opposite and consistent, respectively. Moreover, when the off-resonant circularly polarized (ORCP) light is further radiated on two AFM regions, pure spin current can be further switched into four types of fully spin-valley-polarized currents, which results in an optoelectronically controlled transistor. In particular, the conductances in the P and AP magnetization configurations are either equal or dramatically different, so the optically and electrically controlled MR effect is naturally formed that can be switched from 0 to 1. Our results suggest that graphene has a very promising potential for applications in spintronics and spin-valleytronics.

Multifunctional features of rare-earth based perovskite-like ferrocobaltite Eu(Fe0.5Co0.5)O3

Currently, the search for new materials that allow the electronic manipulation of spin for the transport of both electric charge and spin has intensified, since their applications in spintronic devices depend on this adjustment. The aim of this work is the analysis of the crystallographic properties and their correlation with the semiconducting ferromagnetic response of the compound Eu(Fe0.5Co0.5)O3 synthesised by solid reaction. It is observed that this material crystallizes forming an orthorhombic structure (Pnma space group) with disorder in the distribution of Fe and Co ions. Optical evaluation shows a bandgap of 1.15 eV, typical in semiconductors, which is corroborated by electrical transport measurements. Magnetic characterization reveals a predominantly antiferromagnetic behaviour in the low temperature regime, while at high temperatures a soft ferromagnetic response predominates as results of super-exchange interactions between magnetic moments. First-principles electronic structure calculations suggest the occurrence of direct semiconductor-type band gap but of different value for the two orientations spin up and spin down. This result allows inferring the technological applicability of the material in devices based on polarized spin currents.

Persistent Chirality-Induced Spin-Selectivity Effect in Circular Helix Molecules.

The spin-orbit coupling (SOC), the dynamics of the nonequilibrium transport process, and the breaking of time-reversal and space-inversion symmetries have been regarded as key factors for the emergence of chirality-induced spin selectivity (CISS) and chirality-dependent spin currents in helix molecules. In this work, we demonstrated the generation of persistent CISS currents in various circular single-stranded DNAs and 310-helix proteins for the first time, regardless of whether an external magnetic flux is applied or not. This new CISS effect presents only in equilibrium transport processes, distinct from the traditional CISS observed in nonequilibrium transport processes and linear helix molecules; we term it as the PCISS effect. Notably, PCISS manifests irrespective of whether the SOC is chirality-driven or stems from heavy-metal substrates, making it an efficient way to generate chirality-locked pure spin currents. Our research establishes a novel paradigm for examining the underlying physics of the CISS effect.

Colossal anisotropic absorption of spin currents induced by chirality.

The chiral induced spin selectivity (CISS) effect, in which the structural chirality of a material determines the preference for the transmission of electrons with one spin orientation over that of the other, is emerging as a design principle for creating next-generation spintronic devices. CISS implies that the spin preference of chiral structures persists upon injection of pure spin currents and can act as a spin analyzer without the need for a ferromagnet. Here, we report an anomalous spin current absorption in chiral metal oxides that manifests a colossal anisotropic nonlocal Gilbert damping with a maximum-to-minimum ratio of up to 1000%. A twofold symmetry of the damping is shown to result from differential spin transmission and backscattering that arise from chirality-induced spin splitting along the chiral axis. These studies reveal the rich interplay of chirality and spin dynamics and identify how chiral materials can be implemented to direct the transport of spin current.

A spin current detecting device working in the drift-diffusion and degenerate regimes

<p>A semiconductor-based device working in the spin drift-diffusion regime and for probing the injected or generated spin current was considered. The electric field effects on spin transport were analysed. A drift-diffusion equation for spin density was derived and contributions to the spin current were examined. By referring to the techniques of the spin current injection and generation, expressions for the spin current and spin-induced transverse Hall voltage arising from the injected or generated spin-polarized current were derived. The spin current and Hall voltage in dependences of the external electric field and temperature in the degenerate regime were studied. The device operated on the basis of with no external magnetic fields gives a voltage probe of the spin-induced Hall effect. Finally, a way of enhancing the spin current was explored.</p>