Adv. Electron. Mater., 2019, 5, 1900232 Some errors were present in the figure captions of this manuscript. The correction captions are reproduced below. Figure 1. Ultrathin Si-NM reduction process and corresponding characteristics. A) Schematic of our HF treatment process: thermal oxidation under 90% ozone atmosphere for 12 min at room temperature and stripping the oxide using 10% HF solution for 90 s. After 26 cycles, the thickness of Si-NM sample can be thinned from 50 to 10 nm. B) High-resolution TEM image of HF-thinned Si-NM. Inset is a corresponding diffraction spectroscopy image, indicating little surface reconstruction. C) High-resolution TEM of a 10 nm thick Si-NM. Figure 2. Basic electrical performance based on 10 nm thick Si-NM FETs. A) Schematic of the Si-NM FET structure. "Inset is a colorized optical microscope image of a Si-NM device (channel length L = 5 µm, width W = 10 µm) with the electrode area colored yellow. B) |IDS|–VDS curve at room temperature when VG is fixed at 1 V in a 10 nm thick Si-NM FET. Gate leakage current is plotted by black dots. C) Transfer characteristics of the Si-NM FET. Along the direction of the arrows, VDS changes by steps of 1 V. D) Band profiles of Si-NM FETs at various source-drain biases when VDS = 0, < 0, and > 0. Figure 3. The temperature-dependent property and analysis of Si-NM FETs with various thickness. A) Temperature-dependent IDS–VDS measurement of a 10 nm thick Si-NM FET when gate voltage VG is fixed at 0 V. B) Temperature-dependent conductivity of different thickness Si-NM. C) Re-plot of (B) using lnσ versus T−1/4 coordinates, where blue line shows acceptable linear fitting of 50 nm Si-NM data and others show obvious deviation from linear relationship. D) Re-plotted temperature-dependent conductivity of 10 nm thick Si-NM with lnσ versus lnT coordinate. Red and yellow dash line shows best linear fitting with T−η, η ≈ 0.5, and T3/2, respectively. The gray dash line shows an increasing tendency of conductivity for bulk p-doped semiconductor. E) Conductivity as a function of thickness at different temperatures (50 K, 100 K, 200 K and 300 K). The dots are experimental data and the solid line is a fitted curve. σ0 is the conductivity of 50-nm-thick Si-NM at each temperature.