Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes

Abstract

Adv. Electron. Mater., 2019, 5, 1900232 Some errors were present in the figure captions of this manuscript. The correction captions are reproduced below. Figure 1. Ultrathin Si-NM reduction process and corresponding characteristics. A) Schematic of our HF treatment process: thermal oxidation under 90% ozone atmosphere for 12 min at room temperature and stripping the oxide using 10% HF solution for 90 s. After 26 cycles, the thickness of Si-NM sample can be thinned from 50 to 10 nm. B) High-resolution TEM image of HF-thinned Si-NM. Inset is a corresponding diffraction spectroscopy image, indicating little surface reconstruction. C) High-resolution TEM of a 10 nm thick Si-NM. Figure 2. Basic electrical performance based on 10 nm thick Si-NM FETs. A) Schematic of the Si-NM FET structure. "Inset is a colorized optical microscope image of a Si-NM device (channel length L = 5 µm, width W = 10 µm) with the electrode area colored yellow. B) |IDS|–VDS curve at room temperature when VG is fixed at 1 V in a 10 nm thick Si-NM FET. Gate leakage current is plotted by black dots. C) Transfer characteristics of the Si-NM FET. Along the direction of the arrows, VDS changes by steps of 1 V. D) Band profiles of Si-NM FETs at various source-drain biases when VDS = 0, < 0, and > 0. Figure 3. The temperature-dependent property and analysis of Si-NM FETs with various thickness. A) Temperature-dependent IDS–VDS measurement of a 10 nm thick Si-NM FET when gate voltage VG is fixed at 0 V. B) Temperature-dependent conductivity of different thickness Si-NM. C) Re-plot of (B) using lnσ versus T−1/4 coordinates, where blue line shows acceptable linear fitting of 50 nm Si-NM data and others show obvious deviation from linear relationship. D) Re-plotted temperature-dependent conductivity of 10 nm thick Si-NM with lnσ versus lnT coordinate. Red and yellow dash line shows best linear fitting with T−η, η ≈ 0.5, and T3/2, respectively. The gray dash line shows an increasing tendency of conductivity for bulk p-doped semiconductor. E) Conductivity as a function of thickness at different temperatures (50 K, 100 K, 200 K and 300 K). The dots are experimental data and the solid line is a fitted curve. σ0 is the conductivity of 50-nm-thick Si-NM at each temperature.