Solid Antimony Research Articles

Utilizing in situ alloying reaction to achieve the self-healing, high energy density and cost-effective Li||Sb liquid metal battery

As expected, a desired electrochemical energy storage system can simultaneously combine the low-cost raw materials with ultra-high energy density and no performance degradation characteristics. Here, we use liquid lithium as the anode, solid antimony as the cathode, molten LiF–LiCl–LiBr (or molten LiF–LiCl) as the electrolyte and test the battery at 550 °C. It can provide the energy density as high as 421.6 Wh kg −1 , while the energy storage cost is only 42.4 $ kWh −1 . More importantly, due to the self-healing characteristic of the pure antimony electrode, no capacity fading is observed during 470 cycles. Therefore, with all the merits, the Li||Sb liquid metal battery has become a competitive choice in the field of grid-level energy storage. • Utilizing in-situ alloying reaction to achieve the self-healing process. • Li.||Sb liquid metal battery delivers a very high energy density of 421.6 Wh kg −1 . • The energy storage cost is the lowest among all liquid metal batteries. • The all-liquid state can also appear in the middle state of discharge.

Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation

We report the first integration of a novel solid antimony (Sb) segregation (SSbS) process in a transistor fabrication flow. A thin solid Sb layer, which acts as a large source of n-type dopants, was deposited beneath a metallic nickel layer prior to source-drain silicidation. Following nickel silicidation, a very high concentration of Sb was incorporated at the NiSi/Si interface. The SSbS process is demonstrated to reduce the effective Schottky barrier (SB) height and parasitic series resistance in an n-channel field-effect transistor, leading to enhanced drive current performance without degradation in the OFF -state leakage current. Performance enhancement is also maintained when the supply voltage is reduced from 1.3 to 0.8 V.

MeV Ion-Beam Bombardment Effects on The Thermoelectric Figures of Merit of Zn4Sb3 and ZrNiSn-Based half-heusler compounds

AbstractSemiconducting â-Zn4Sb3and ZrNiSn-based half-heusler compound thin films were prepared by co-evaporation for the application of thermoelectric (TE) materials. High-purity solid zinc and antimony were evaporated by electron beam to grow the â-Zn4Sb3thin film while high-purity zirconium powder and nickel tin powders were evaporated by electron beam to grow the ZrNiSn-based half-heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardments for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardments. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam can cause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ù-method measurement system to measure the cross-plane thermal conductivity ,the Van der Pauw measurement system to measure the cross-plane electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

Nanoscale BixTe3/Sb2Te3 multilayer thin film materials for reduced thermal conductivity

Multilayer thin films were grown sequentially by evaporating solid antimony (III) telluride and bismuth (III) telluride as thermoelectric (TE) materials. The grown multilayer films have a periodic structure consisting of eleven or thirty-nine alternating thin film layers where each layer is 10nm thick. Rutherford backscattering spectrometry (RBS) analysis indicates that the deposited antimony telluride films have the desired stoichiometry of Sb2Te3 and the bismuth telluride films are Bi1.1Te3.0. A 3ω method thermal conductivity measurement system was used to measure the thermal conductivity of the multilayer thin films. 5MeV Si ion implantation was performed to improve the thermal conductivity of the multilayer thin films. Thermoelectric devices were fabricated with the multilayer thin films for the measurement of the cross-plane thermoelectric voltage and determination of Seebeck coefficient. The nanostructured multilayer thin film materials were found to have lower thermal conductivity than their conventional bulk materials, and Si ion implantation can decrease the thermal conductivity of the multilayer thin films.

MeV Si ion bombardments of thermoelectric BixTe3/Sb2Te3 multilayer thin films for reducing thermal conductivity

BixTe3/Sb2Te3 multilayer thin films were grown as thermoelectric (TE) materials using electron-beam evaporation. Solid antimony (III) telluride and bismuth (III) telluride were used for the growth of BixTe3 and Sb2Te3 layers. Rutherford backscattering spectroscopy (RBS) analysis shows that the grown antimony telluride film has the stoichiometry of Sb2Te3 and the bismuth telluride film is Bi1.1Te3. The grown multilayer films have a periodic structure consisting of alternating Bi1.1Te3 and Sb2Te3 layers. The Bi1.1Te3/Sb2Te3 multilayer thin films with five or seven layers were analyzed by RBS. The grown Bi1.1Te3 and Sb2Te3 monolayer thin films and Bi1.1Te3/Sb2Te3 multilayer thin films were bombarded by 5MeV Si ions. The thermal conductivity of the grown films was measured by a 3ω-method thermal conductivity measurement system. The multilayer structure and MeV Si ion bombardment made the films to have a lower thermal conductivity.

Thermodynamic properties of SnSb2Te4 ternary compounds

The Gibbs free energy, enthalpy, and entropy of formation for tin monotelluride from its solid compounds and for the ternary compound SnSb2Te4 from SnTe and Sb2Te3 are determined by measuring the emf of galvanic cells. The thermodynamic functions of ternary compound formation from pure components (solid tin, antimony, and tellurium) are calculated. The enthalpy of formation for tin monotelluride is in good agreement with the results of calorimetric measurements.

GaAsSb/GaAs quantum well growth by MOCVD hydride epitaxy with laser sputtering of antimony

A new method of obtaining quantum-size GaAs1−x Sbx (x⩽0.45) layers is proposed. The method consists in laser vaporization of solid metallic antimony near the substrate directly in the reactor. The antimony concentration is set by the antimony sputtering time with the arsine flux shut off. The polarization of the photoluminescence of the obtained layers indicates the formation of quantum wires. The heterostructures obtained are used to fabricate laser diodes.

The high-temperature enthalpy increment of solid antimony

The enthalpy increment of solid antimony has been measured by drop calorimetry from 486 to 858 K. The results can be represented by: {H 0(T)−H 0(298.15 K}/ J mol −1=19.5569(T/ K)+6.14137×10 −3(T/ K) 2−1.83207×10 5(T/ K) −1−5762.3 In addition, an assessment of the low-temperature heat capacity data has been made, yielding S 0(298.15 K)=(45.42±0.45) J K −1 mol −1. From the combined results, the thermodynamic properties of solid antimony have been calculated.

MOMBE growth of AlSb and AlGaSb using trimethylamine alane

MOMBE (metalorganic molecular beam epitaxy) growth of AlSb and AlGaSb using trimethylamine alane (TMAAl), triethylgallium (TEGa) and solid antimony (Sb 4) is reported for the first time. The growth rate of AlSb shows a monotonic increase with substrate temperature ( T sub) and a decrease with increasing Sb flux. The activation energy for the AlSb growth is 14 kcal/mol at T sub > 460°C and 30 kcal/mol at T sub<460°C. In the AlGaSb growth, the enhancement of the partial growth rate of GaSb is observed and is caused by the TEGa decomposition enhancement effect of the hydrogen atoms from AlH 3. 4.2 K photoluminescence (PL) spectra for the undoped AlGaSb layers exhibit a sharp band-to-band transition with an intensity comparable to that for the GaSb bulk crystal.

Selenium residual doping of (AlGa)Sb/GaSb epilayers grown by molecular beam epitaxy

Some (AlGa)Sb layers grown by molecular beam epitaxy were found unexpectedly to be n type. Characterizing these layers by secondary ion mass spectrometry it was observed that they contained selenium (Se). Systematic analyses showed that selenium was present in all our antimonide layers, even those which were p type, at concentrations between 6×1014 and 3×1017 cm−3. The thermodynamical study of this contaminant incorporation led us to conclude that it comes from the solid antimony used for growths. That was confirmed by spark source mass spectrometry investigations. During growths, selenium behaves as other elements of group VI, sulphur for example, and this behavior is described by a simple kinetic model. It incorporates more easily at low substrate temperatures and saturates at levels depending on the antimony (Sb4) flux. At higher substrate temperatures, the incorporation is balanced by desorption according to an activation energy of 3.2 eV. As a consequence, selenium constitutes an accurate thermal probe to follow substrate temperature variations during growths. As could be expected, sulphur was also found to contaminate (AlGa)Sb films at levels of the order of a few 1015 cm−3. However, oxygen was not detected, probably being lower than 1016 cm−3 the detection limit of the analytical technique. This residual doping of antimonides by chalcogens presumably compensates their natural p-type doping, but relationships with mobilities have not been evidenced yet.

MOMBE growth of AlGaSb

AlSb and AlGaSb single crystalline layers have been grown on GaSb substrates by metalorganic molecular beam epitaxy (MOMBE) using trimethylaluminium (TMAl), triisobutylaluminium (TIBAl), triethylgallium (TEGa) and solid antimony (Sb 4). Crystalline AlSb films have been obtained using TIBAl, while not when TMAl was used. This is related to the difference in the reaction processes. In the growth of AlGaSb using TIBAl and TEGa, a strong suppression of the growth rate of constituent binary AlSb is observed in the low substrate temperature region. This is caused by the co-existence of TEGa and the formation of ethyl-Al bonds where the ethyl radicals are supplied during the decomposition process of TEGa. GaSb/AlSb quantum well structures have been grown and their PL spectra have shown strong peaks.

Experimental study of the non stoichiometry of cesium antimonide ≈ Cs 3Sb

Non stoichiometric ≈ Cs 3Sb was synthesized at 200°C by a reaction of solid antimony with cesium vapor under controlled pressure. The compositions obtained correspond to atomic ratios 3.04 > Cs Sb > 2.95 . Measurements of the Seebeck coefficient, diffuse reflectance spectra and X-ray studies indicate that the predominant defects are singly charged interstial cesium when Cs Sb > 3 and singly charged interstitial cesium when Cs Sb < 3 ; the band gap is close to 1.35 eV in the whole composition range.

MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSb

GaSb, InSb and InGaSb single crystalline layers have been grown on GaSb substrates, for the first time, by metalorganic molecular beam epitaxy using triethylgallium (TEGa), trimethylindium (TMIn) and solid antimony. GaSb epilayers having mirror surfaces without Ga droplets have been obtained under Sb pressures higher than the particular value, which is higher than that in the solid source MBE at the same growth rate. This is related to the TEGa pyrolysis process on the GaSb surface. The 77 K PL spectrum of GaSb grown under such conditions shows a very narrow band-to-band emission peak. InSb layers with mirror surfaces can be grown only in a narrow Sb pressure region. The In/Ga composition ratio of InGaSb is linearly dependent on the TMIn/TEGa flux ratio.

Dissolution of solid antimony in molten bismuth under static conditions

The dissolution of solid antimony in molten bismuth was studied under static and isothermal conditions using the reaction couple and immersion methods between 623 and 773 K. The dissolution of antimony under the antimony upper position, using reaction couple method, was governed by diffusion, and the diffusion coefficient of antimony in molten bismuth was obtained as follows:DL = 2.08 X 10-8exp(-ll kJ mol-1/RT), (m2/s). The dissolution of antimony under the immersed condition was governed by the natural convection resulting from the density difference in the melt, and the dissolving antimony was distributed uniformly by natural convection in molten bismuth. The apparent activation energy for the dissolution of solid antimony in molten bismuth was the same as that for the diffusion of antimony in the melt.

Dispersion of Samples in Solid Antimony Trichloride as a Method for Infrared Analysis.

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTDispersion of Samples in Solid Antimony Trichloride as a Method for Infrared Analysis.Herman. Szymanski, Kenneth. Broda, Joan. May, William. Collins, and Dennis. BakalikCite this: Anal. Chem. 1965, 37, 4, 617–618Publication Date (Print):April 1, 1965Publication History Published online1 May 2002Published inissue 1 April 1965https://doi.org/10.1021/ac60223a057RIGHTS & PERMISSIONSArticle Views20Altmetric-Citations4LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (255 KB) Get e-Alerts Get e-Alerts

Thermochemistry of antimony

synopsis With a mass-spectrometer the various thermochemical quantities of antimony were determined, using the Knudsen cell technique. The results can be summarized as follows: vaporisation of solid antimony (per Sb4) dHsgs.16 = 49.78 + 0.3 kcal/mole dS293.13 = 40.33 cal/‘mole vaporisation of liquid antimony (per Sb4) dHsss.5 = 26.91 f 1.0 kcal/mole dS903.5 = 12.43 cal/“mole * fusion (per Sb) dHsss.5 = 4.74 f. 0.3 kcal/mole dS903.5 = 5.25 cal/“mole dissociation Sbr Z 2 Sbs (per Sb4) dHsss.16 = 67.5 f 2 kcal/mole. The vapour pressure below the melting point is given by

Vapor Pressure of Antimony by the Torsion-Effusion Method

The pressures and mean molecular weights of the vapors over solid antimony (420–550°C) and solid zinc (250–335°C) have been determined by simultaneous measurements by the torsion-momentum and Knudsen weight loss methods. The torsion measurement was calibrated with mercury at 30° using a mercury vapor pressure of 2.96×10-3 mm Hg determined by concurrent weight loss experiments. Zinc vapor is confirmed to be monatomic. The zinc pressure data are represented by logPmm=(8.741±0.218) — (6630±125) /T giving ΔH298° (vap)=30.73±0.57 and 31.18±0.12 kcal/mole by the second law and third law of thermodynamics, respectively, in excellent agreement with previously reported results. The vapor over solid antimony is all Sb4 molecules within experimental error. Least-squares analysis of the antimony data yields logPmm=(10.571±0.090) — (10 300±68) /T, pressures 10%-40% lower than those previously reported. The heat of vaporization of Sb4(g) at 298.16°K is 49.83±0.31 kcal/mole by the second law and 49.45±0.09 by the third law of thermodynamics. This thermodynamic consistency and the agreement of the zinc results with accepted measurements indicate that the antimony pressures presented should be preferable to those previously reported.

PARA‐ AND DIAMAGNETIC SUSCEPTIBILITIES IN NON‐FLUCTUATING WEAK FIELDS

A Coulomb torsion balance apparatus was developed with which absolute measurements of para‐ and diamagnetic susceptibilities could be made in non‐fluctuating field strengths of the order of 1 oersted. Solid specimens of the diamagnetic elements, bismuth, antimony, and cadmium, were measured in fields of 2.5, 5, and 10 oersteds, and the para‐magnetic powders, [Formula: see text], [Formula: see text], and [Formula: see text], in fields of 2, 3, and 5 oersteds. The susceptibilities decreased with increasing field strengths. A specimen of bismuth granules had lower susceptibilities than did the solid specimen made from the same supply of granules. A semi‐micro balance apparatus also was constructed for absolute measurements in fields ranging between 100 and 1,000 oersteds. The susceptibilities of the diamagnetic specimens and a water specimen were measured. The solid bismuth, antimony, and cadmium specimens and a water specimen exhibited constant susceptibilities. The susceptibility of the bismuth‐granule specimen increased regularly from −4.67 to [Formula: see text] C.G.S. when the field increased from 100 to 900 oersteds. The value found for water [Formula: see text] agreed well with the International Critical Tables value [Formula: see text].