Abstract
MOMBE (metalorganic molecular beam epitaxy) growth of AlSb and AlGaSb using trimethylamine alane (TMAAl), triethylgallium (TEGa) and solid antimony (Sb 4) is reported for the first time. The growth rate of AlSb shows a monotonic increase with substrate temperature ( T sub) and a decrease with increasing Sb flux. The activation energy for the AlSb growth is 14 kcal/mol at T sub > 460°C and 30 kcal/mol at T sub<460°C. In the AlGaSb growth, the enhancement of the partial growth rate of GaSb is observed and is caused by the TEGa decomposition enhancement effect of the hydrogen atoms from AlH 3. 4.2 K photoluminescence (PL) spectra for the undoped AlGaSb layers exhibit a sharp band-to-band transition with an intensity comparable to that for the GaSb bulk crystal.
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