Abstract
We investigated the gas-phase reaction between trimethylamine alane (TMAA) and triethylgallium (TEG) in chemical beam epitaxy (CBE) using a quadrupole mass analyzer (QMA). When they were premixed to form a single beam, the overall intensity of the mass spectrum for the mixtures was much lower than that for each source, which was consistent with the observed growth rate of each layer. In contrast, such reduction was remarkably suppressed when they formed individual beams. These results indicated that gas-phase reaction to produce nonvolatile materials occurred in the premixing region. Therefore, premixing must be prevented during growth using TMAA and TEG.
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