Abstract
The authors have investigated the role of various arsenic precursors on the selectivity of GaAs and AlGaAs at low deposition temperatures, <or=525 degrees C, during growth by metal organic molecular beam epitaxy (MOMBE). The As2 generated from the cracking of AsH3 was found to induce nucleation on the SiN mask surface for both triethylgallium (TEG) and trimethylamine alane (TMAA). Trisdimethylaminoarsenic (DMAAs) produces identical behavior, probably due to its high decomposition efficiency, which also leaves free arsenic on the mask surface. By contrast, phenylarsine (PhAsH2) does not induce nucleation as readily due to its insufficient decomposition on the mask surface. Using PhAsh2, GaAs growth from TEG and AlGaAs growth from TMAA and trimethylgallium (TMG) were found to be highly selective. However, though selectivity was high, the surface morphology of the regrown area was typically rough due to contamination during processing. Various attempts at removing this contamination are also discussed.
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