Abstract
BixTe3/Sb2Te3 multilayer thin films were grown as thermoelectric (TE) materials using electron-beam evaporation. Solid antimony (III) telluride and bismuth (III) telluride were used for the growth of BixTe3 and Sb2Te3 layers. Rutherford backscattering spectroscopy (RBS) analysis shows that the grown antimony telluride film has the stoichiometry of Sb2Te3 and the bismuth telluride film is Bi1.1Te3. The grown multilayer films have a periodic structure consisting of alternating Bi1.1Te3 and Sb2Te3 layers. The Bi1.1Te3/Sb2Te3 multilayer thin films with five or seven layers were analyzed by RBS. The grown Bi1.1Te3 and Sb2Te3 monolayer thin films and Bi1.1Te3/Sb2Te3 multilayer thin films were bombarded by 5MeV Si ions. The thermal conductivity of the grown films was measured by a 3ω-method thermal conductivity measurement system. The multilayer structure and MeV Si ion bombardment made the films to have a lower thermal conductivity.
Published Version
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