NiOx, prepared via the sputtering method, exhibits low conductivity and energy level mismatch with the perovskite layer, thereby limiting further enhancements in the performance of perovskite solar modules (PSMs). Unlike traditional methods that enhance the performance of NiOx through reactive sputtering or directly doping NiOx targets with metal ions, both of which incur high costs and low efficiency, we employ an evaporation method using LiF to achieve efficient and low-cost doping of NiOx. Compared to the pristine NiOx, the incorporation of LiF significantly increases the conductivity of NiOx. Additionally, the incorporation of LiF enhances the quality of the deposited perovskite films, as well as the energy level alignment and symmetry between NiOx and the perovskite, effectively improving the hole extraction and transport capabilities between NiOx and the perovskite. As a result, the PSM (active area of 57.30 cm²) fabricated in air achieves an impressive efficiency of 19.54%. Furthermore, the unencapsulated PSM retains 80% of its initial efficiency after 700 h of continuous illumination, whereas the NiOx-based PSM drops to 80% after only 150 h. This study provides a simple and low-cost method for doping NiOx, which is of great significance for the further industrialization of PSMs.