This study presents a comprehensive investigation into fabrication and characterization of HJPSC leveraging chalcogenide Zinc Sulphide (ZnS) thin films as ETL and Selenium (Se) as a protective capping layer through PVD technique. ZnS thin films annealed at 200 °C, 300 °C and 400 °C were systematically analyzed for their structural and opto-electronic properties. Among them, ZnS-1, annealed at 200 °C, demonstrated superior performance with high transmittance, optimal crystallite size, wide bandgap, lowest photoluminescence intensity, high conductivity and low resistivity. Consequently, ZnS-1 was selected as the ETL for HJPSC fabrication. The HJPSC device was fabricated with ZnS/MAPbI3--Se/Ag as device structure with Se as capping layer. SEM images confirmed the smooth and continuous nature of the ZnS-1 film, while X-Ray diffraction analysis validated the purity and crystallinity of MAPbI3 perovskite layer. The successful alignment of the perovskite absorption band with the solar cell emission spectrum obtained by UV–Vis spectra highlighted the potential for efficient solar energy conversion. J-V characteristics of the HJPSC device exhibited a high short-circuit current (Jsc) of 20.18 mA/cm2, an open-circuit voltage (Voc) of 0.99 V, a power conversion efficiency (PCE) of 9.1 % and fill factor (FF) of 45.7 % was accredited to improved electron conductance and of ZnS-1 as an ETL.
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