SnO2 Semiconductor Research Articles

Synthesis and investigation of optical properties and enhancement photocatalytic activity of TiO2–SnO2 semiconductor for degradation of organic compounds

Industrial wastewater treatment using UV irradiation in combination with oxidants or catalysts (TiO2) has attracted attention as a promising substitute for conventional methods. Studying the preparation and characterization of TiO2–SnO2 nanocomposites with different ratios, as well as their use in the enhanced photocatalytic degradation of acid red 37 dye in aqueous solution under UV irradiation as a model pollutant, are the goals of the research. The crystalline structures of the prepared nanomaterials were confirmed by XRD and the surface morphology of the samples was studied by TEM. The elemental compositions of the catalysts were confirmed by EDAX. The optical properties of the powder samples were analyzed with UV–Vis spectroscopy and their band gaps were estimated. The photocatalytic degradation was investigated using several advanced oxidation techniques using a batch photoreactor. The TiO2–SnO2 (90:10) nanocomposite showed the best degradation efficiency.

Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors

We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO2 films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network, which contributes to the low leakage current and frequency-independent dielectric properties. The ZrO2/SnO2 TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics, including a field-effect mobility of 26.16 cm2/Vs, a subthreshold swing of 0.125 V/dec, and an on/off current ratio of 1.13 × 106 at a low operating voltage of 3 V. Furthermore, we demonstrated flexible ZrO2/SnO2 TFTs with robust mechanical stability, capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm, achieved by scaling down the device dimensions.

Anchoring TiO2 and CuO nanoparticles on SnO2 nanotube arrays to construct ternary heterostructure for visible-light-driven photocatalytic degradation of green malachite dye

Designing and constructing heterostructure photocatalysts is necessary to facilitate the long-term separation of photogenerated charge carriers and enhance photocatalytic efficiency. Herein, a ternary nanocomposite photocatalyst based on SnO2, TiO2 and CuO semiconductors was successfully synthesized and employed as a highly effective photocatalyst for the malachite green (MG) dye degradation under visible light irradiation. According to the results, the ternary SnO2/TiO2/CuO nanocomposite demonstrated impressive photocatalytic activity (98.4 %) compared to pristine SnO2 nanotubes (40.3 %), binary SnO2/TiO2 (76 %) and SnO2/CuO nanocomposites (88 %), when exposed to 90 min of visible illumination. The photoreaction rate constant of SnO2/TiO2/CuO nanocomposite (0.0482 min−1) was found to be ∼8.5 times faster than SnO2 nanotubes (0.0057 min−1) against MG dye. This enhancement in photocatalytic performance can be attributed to the introduction of TiO2 and CuO which effectively suppress the recombination of photogenerated electron-hole pairs, accelerate the transfer of charge carriers, increase the active sites, and improve the optical absorption properties. Scavengers were used to elucidate the photocatalytic mechanism, exhibiting the pivotal role of •O2− and h+ in the photodegradation process. Besides, recyclability tests showed acceptable results after four cycles, confirming the stability and durability of the SnO2/TiO2/CuO nanocomposite against RhB dye degradation.

NO2-Sensitive SnO2 Nanoparticles Prepared Using a Freeze-Drying Method.

The n-type semiconductor SnO2 with a wide band gap (3.6 eV) is massively used in gas-sensitive materials, but pure SnO2 still suffers from a high operating temperature, low response, and tardy responding speed. To solve these problems, we prepared small-sized pure SnO2 using hydrothermal and freeze-drying methods (SnO2-FD) and compared it with SnO2 prepared using a normal drying method (SnO2-AD). The sensor of SnO2-FD had an ultra-high sensitivity to NO2 at 100 °C with excellent selectivity and humidity stability. The outstanding gas sensing properties are attributed to the modulation of energy band structure and the increased carrier concentration, making it more accessible for electron exchange with NO2. The excellent gas sensing properties of SnO2-FD indicate its tremendous potential as a NO2 sensor.

Role of ultrathin Ti3C2Tx MXene layer for developing solution-processed high-performance low voltage metal oxide transistors

Metal oxide transistors have garnered substantial attention for their potential in low-power electronics, yet challenges remain in achieving both high performance and low operating voltages through solution-based fabrication methods. Optimizing interfacial engineering at the dielectric/semiconductor interface is of utmost importance in the fabrication of high-performance thin film transistors (TFTs). In the present article, a bilayer Ti3C2Tx-MXene/SnO2–semiconductor (Tx stands for surface termination) configuration is used to fabricate a high-performance n-type thin film transistor by using an ion-conducting Li-Al2O3 gate dielectric on a p+-Si substrate, where electrical charges are formed and modulated at the Li-Al2O3/SnO2 interface, and Ti3C2Tx-MXene nanosheets serve as the primary electrical charge channel due to their long lateral size and high mobility. A comparative characterization of two distinct TFTs is conducted, one featuring Ti3C2Tx MXene and SnO2 semiconductor layer and the other with SnO2 only. Notably, the TFT with the Ti3C2Tx MXene layer has shown a significant boost in the carrier mobility (10.6 cm2/V s), leading to remarkable improvements in the on/off ratio (1.3 × 105) and subthreshold swing (194 mV/decade), whereas the SnO2 TFT without the Ti3C2Tx MXene layer shows a mobility of 1.17 cm2/V s with 8.1 × 102 on/off ratio and 387 mV/decade subthreshold swing. This investigation provides a possible way toward the development of high-performance, low-voltage TFT fabrication with the MXene/semiconductor combination.

Nano-micro 2D/3D SnO2 semiconductor ultrahigh sensitive sensors for electrochemical sensing of hydrogen peroxide

Detection of H2O2 levels is highly in demand as they are related with several environmental and medical applications. H2O2 is a reactive oxygen species that plays a crucial role in various cell functions thus it is considered as a potential biomarker. Novel 3D/2D SnO2 micro-nanostructures (with dimensions of 3D: B≈1 µm×L≈10 µm×T≈1 µm; 2D structures ranging<100 nm) modified on glassy carbon electrodes (SnO2/GCE) displayed an electrocatalytic redox behaviour against H2O2 on an alkaline based electrolyte medium illustrated using a three-electrode system. This is the first time hybrid morphology with 2D/3D structures of SnO2 is developed. SnO2/GCE was tested for H2O2 concentration ranging from 2.45 to 24.5 μM. The LOD of the sensor was observed to be 4.09 μM within the measured concentration limits. The sensors exhibited an ultra-high sensitivity value of 108 mA.mM−1.cm−2. All the linear fits are exhibiting higher accuracy with R2 of 0.99. Hybrid morphology of SnO2 acts as promising sensing material independently for detection of H2O2 even in alkaline medium with pH of 12. Also, it should be noted that electrochemical sensing of SnO2 alone is tested depicting better properties whereas commonly hybrid, composite materials are used for sensing applications.

Discerning the catalytic treatment of cationic dye wastewater in photoreactor comprising ternary (Co3+/Co2+)-embedded SnO2/ZnFe2O4 composite sensitive toward ultra-violet illumination.

Herein, magnetic (Co3+/Co2+)-integrated SnO2, SnO2/ZnFe2O4, and ZnFe2O4 composites have been prepared from triply distilled water and 30% of isopropanol in the water medium. The phase evolution, microstructure, and magnetism were investigated successfully and tested for cationic dye wastewater degradation containing Rhodamine 6G and Methylene Blue under ultra-violet irradiation. Composite spheres are attributed to efficient heterojunction interfaces between ZnFe2O4 and SnO2 semiconductors with the support of (Co3+/Co2+) nanoparticles. The results provide a simple, low-cost, environmentally friendly, and scalable method of ternary composites to degrade mixed dyes. Co3+/Co2+-implanted SnO2/ZnFe2O4 offered narrowed bandgap energy, more light absorption, diminishing electron-hole recombination, and more charge carriers toward cationic dye wastewater than the binary components. The rate constant of Rhodamine 6G degradation was observed at 0.0237min-1, and Methylene Blue degradation was observed at 0.0187min-1 at 90min under UV (λ = 365nm) irradiation. Capturing studies of various organic reactive species and mechanisms of composites was also proposed in detail.

Structural, optical and magnetic properties of Fe, Co and Co[sbnd]Fe doped SnO2 thin films deposited by a thermionic vacuum arc deposition system

Fe, Co and CoFe doped SnO2 thin films were deposited onto glass, indium tin oxide-coated glass, and Si substrates to investigate the influence of substrate material on the surface and magnetic properties. The motivation of this study is to investigate the magnetic, surface, and optical properties of doped SnO2 semiconductor materials as they vary with different substrate materials. The film surfaces are smooth and compact. Additionally, nano particles were observed. Thin films of SnO2 doped with Fe, Co and CoFe doped SnO2 have a Curie temperature. Magnetization–temperature and magnetization–temperature graphs have shown the predicted magnetic properties. These films have giant magnetization and soft magnetic properties. In separately doped Fe and Co – SnO2 thin films, the M (emu) values are nearly the same. In Co and Fe-doped SnO2 thin films, the M (emu) values for the film deposited onto ITO-coated glass and uncoated glass are nearly the same.

N-type semiconductor [Gd3+-Ho3+-Dy3+]:SnO2 driven functionality enhancement in energy systems associated with photovoltaic and electrochemical contraptions

Current work reports the sustainable synthesis and application of the novel n-type [Gd3+-Ho3+-Dy3+]:SnO2 semiconductor material expressing band gap energy narrowing upon lanthanide triple doping. The band gap energy of this material spanned around 3.8–3.9 eV. Rare earth doped SnO2 material has tetragonal rutile crystalline geometry, space group P42/mnm, and 59.46 nm particle size. Thin films for this material have remarkable coverage. Using this material as an electron transport layer inside all inorganic perovskite device resulted in a negligible hysteresis leading to remarkable power conversion efficiency of 14.16 %, fill factor 80 %, short circuit current 16.48 mA cm−2, and an open circuit voltage of 1.02 V [Gd3+-Ho3+-Dy3+]:SnO2 decorated nickel foam electrode expressed double layer mechanism of electrical charge storage gaining a specific capacitance of 689 F g−1 in 0.1 M NaCl electrolyte at 10 mV/s. Excellent electronic and ionic conductivity was expressed by impedance studies with equivalent series resistance (Rs) of as low as 0.11 Ω. Furthermore, the electro-catalytic water splitting results exhibited the auspicious of this material as an HER catalyst with lower overpotential and Tafel slope values of 140 mV and 125.5 mV dec−1, respectively. The developed material is a suitable candidate for advanced energy applications marked by sustainability and economic viability.

A Review on Preparation Techniques of Charge Transport Layer for Organic and Inorganic Perovskite Solar Cells

The fascinating behavior of charge transport layer in organic and inorganic perovskite solar cells has piqued the interest of designers of semiconductor SnO2 nanoparticles (PSC). The goal of this research is to look at several techniques for manufacturing SnO2 films for use as charge transport layers in PSC. To comprehend the link between the attribute of nanostructured SnO2 films and the efficiency of solar cells, special attention is devoted to the production and properties of the SnO2 thin films. The spin-coating deposition of SnO2 nano fluids generated via surface modification of nano-colloids composed of SnO2 has been one of the key techniques for obtaining SnO2 layers. It has also been reported that preparing SnO2 nanoparticles using Tin (IV) salts results in a high-quality SnO2 film. Light-to-electricity conversion efficiency of about 25.5% has been claimed in many PSC papers [1]. One benefit of adopting SnO2 materials is that they have substantially greater conductivity than TiO2. This work also discusses the production of SnO2 nanoparticles, a different method of generating SnO2 charge transport materials that may be accomplished by the process of freeze-drying precursors known as Tin (IV). SnO2 crystal formation may be regulated at temperatures as low as 700C.

Effect of Cobalt Doping on Gas Sensing Properties of SnO2 Thick Films Prepared by Chemical Co-Precipitation Method

Co-precipitation method was used for the preparation of undoped SnO2 and n-type semiconductor nanomaterials of cobalt-doped SnO2. To identify the crystalline phase and morphology of the nanomaterials were characterized by X-ray powder diffraction and scanning electron microscopy. To focus and study on the gas sensing behaviour of undoped SnO2 and modified Co-doped SnO2 thick films. To study there sensitivity among the toxic, flammable and hazardous ethanol, hydrogen sulphide, nitrogen dioxide and ammonia gases. The optimum working temperature for the nanomaterial is same as per the variable gas sensitivity.

Effect of SiO2 gate insulator on electrical performance of solution processed SnO2-Based thin film phototransistor

SnO2-based TFTs were fabricated by using the sol-gel spin coating method. SnO2 semiconductor films used as active layers were coated on oxidized Si with different SiO2 thicknesses. AFM was used to analyze the surface morphology. The oxidation states of SnO2 film for Sn3d and O1s were determined by XPS. The parameters demonstrating the electrical performance of a transistor such as mobility (μ), threshold voltage (Vth) and sub-threshold swing (SS) have been determined depending on the thickness of the dielectric layer. The thickness of the dielectric layer played an important role in the device's performance. The highest mobility and Ion/off values were obtained as 7.1 cm2/V.s and 6.98x104 for TFT fabricated with a 150 nm thick SiO2 layer. All the TFTs exhibited photosensing behavior at different light intensities and these results are an indicator that the SnO2 TFT can be effectively utilized in visible photo-detecting device applications.

Sustainable and effective catalytic particles for electrocatalytic combustion of refractory organic matter

The development of ultra-efficient, sustainable, and easily accessible catalytic particle (CP) is a useful strategy for hydroxyl radical generation in the three-dimensional electrolytic system (3D ECs). Herein, a crystalline fused CP composed of coal gangue, activated sludge, and iron sludge, were synthesized for refractory organic matter electrocatalytic combustion in a boron-doped diamond (BDD) 3D ECs. A rough and SnO2 semiconductor metal oxide pellet-anchored continuous interface was created through a one-pot calcination method. In determination of the CP agglomeration mechanism, XRD and XPS results displayed that discrete component of SiO2, Al2O3, and Na2O were transformed into a homogeneous quartz albite NaAlSi3O8 phase, and SnO2-Sb2O5 components formed and spread in the whole ball structure during high-temperature molding process. The newly designed CP exhibited incomparable phenol degradation capacity. The dichromate oxidizability (CODCr) removal efficiency of phenolic wastewater increased 14.3 % compared to the commercial active carbon packed system. The electrocatalytic oxidation capacity of CP was evaluated comprehensively under various working condition, e. g. different cathodes, present or absent of Cl- and persulfate agents, and with or without microbubble coupling. Our experimental results showed that considerable CODCr removal efficiency of 86.3 % was obtained with microbubble coupling oxidation using cell voltage 6.0 V and treating time 120 mins. Besides these, the designed CP presented outstanding stability, and CODCr removal efficiency slightly decreased 7.1 % after 10 cycle repetitions. The use of solid waste as the main material for CPs production not only realizes harmless treatment of solid wastes but also improve the 3D ECs significantly.

The role of TiO2:SnO2 heterojunction for partial oxidation of methane by photoelectrocatalytic process at room temperature

Partial Oxidation of Methane into hydrocarbons using photoelectrochemical routes is attractive from a sustainability point of view owing to the possibility of using renewable energy (i.e., solar illumination) to activate this stable molecule. However, the process demands the development of novel catalysts that can promote methane activation and oxidation in a controlled manner to increase energy conversion efficiency. Herein, we demonstrated that semiconductor heterostructures improved charge separation compared to the individual materials alone. A more effortless transfer between bands favors the separation of the electron-hole (e−/h+) pairs generated by the photoelectrocatalytic system and prevents them from recombining. This process produces reactive oxygens, essential to driving methane oxidation conversion of the C–H bond cleavage. TiO2:SnO2 semiconductor heterojunction catalysts in film shape were investigated for methane oxidation via a photoelectrocatalytic process. The methane oxidation reactions were carried out in an inflow and sealed electrochemical system for 1 h. Liquid-state nuclear magnetic resonance revealed methanol and acetic acid as the main liquid products, where the TiO2:SnO2 heterojunction exhibited better performance with values of 30 and 8 µmol.cm−2.h−1, respectively. Compared to their materials alone, the superior performance of the TiO2:SnO2 heterojunction is attributed to the formation of heterostructure type II that enables a more effortless transfer between bands, facilitating the separation of the generated e−/h+ pairs under UV-Vis irradiation. The outcomes achieved here will motivate further studies for developing semiconductor heterojunction structure catalysts in photoelectrocatalysis to partially oxidize methane into valuable chemicals.

Self-Powered Mechanical Energy Sensor Application of SnO2/Ag and PMMA/ITO Nanocomposites via Triboelectric Effect

The triboelectric nanogenerator is a state-of-the-art device for addressing the growing problem of meeting the world's ever-increasing energy needs by converting mechanical energy into electrical energy. Using the popular semiconductor SnO2 nanostructured thin films as a triboelectric layer over contact regions, as opposed to polymers with lesser performance, increases the output power and life time of nanogenerators. In order to design a triboelectric nanogenerator, deposited thin film SnO2 is used as a friction layer with Ag electrode after heat-treatment at 623 K with a contrary layer of PMMA poly (methyl-methacrylate) with ITO electrode. The structural and electrical properties were analyzed by using scanning electron microscopy (SEM), electro-impedance spectroscopy (EIS) and atomic force microscopy (AFM) measurements. The increased output power of the triboelectric nanogenerator is attributed to the nanoscale PMMA contact charge created by tunneling electrons in the SnO2/Ag nanocomposite thin film layer. Due to its proximity to the PMMA/ITO surface, the SnO2/Ag layer causes electron field emission, and tapping the SnO2/Ag layer may result in electron cloud overlap. Similar to a semiconductor/insulator interface, the Fermi level of SnO2 plays a crucial role in electron transport. The system efficiency stated as a touch detector in a conventional keyboard that generates its own power is revealed in part by an analysis of its operating state up to the 4V.

Multifunctional n-type [Sm3+-Eu3+-Tm3+] - doped SnO2 semiconductor system steered electrochemical and photovoltaic efficiency enhancement in energy applications

BackgorundCurrent study developed a sustainable and an efficient energy system by triply doping tin oxide (SnO2) host with the different lanthanides forming an n-type [Sm3+-Eu3+-Tm3+]: SnO2 heterostructure. MethodsNovel system was synthesized via chemical co-precipitation and thin films were fabricated. Significant findingsThe synergistic electronic coupling of the rare earth dopants and SnO2 host based heterostructure was marked by band gap reduction spanning in the range of 3.48 – 3.59 eV and an average particle size of 47.7 nm with tetragonal rutile geometry. Its electro-catalytic activity for producing O2 and H2 excelled over the conventional catalysts with lower overpotential for O2 / H2i.e. 260 and 143 mV and Tafel slope values of 89.8 and 66.9 mV dec−1, respectively. [Sm3+-Eu3+-Tm3+]: SnO2 is an auspicious electrode material for supercapacitors with the specific capacitance of 592.5 F g − 1 in 0.1 M NaCl, indicative of the characteristic pseudocapacitive behavior. This electrode is intact for an extended duration with the potential of acquiring higher current densities. Additionally, [Sm3+-Eu3+-Tm3+]: SnO2 electron transport layer in perovskite solar cell device ensued an efficiency of 14.23% and a fill factor of 66.94%. The improved photovoltaic parameters are expressive of the excellent connection between different layers enhancing the performance.

Synthesis of Semiconductor SnO2 Hollow Nanosphere; Their Modified Electrode for Electrochemical Reduction and Determination of Hydrogen Peroxide, Ethanol and Oxidation of Bioactive Molecules

Synthesis of Semiconductor SnO2 Hollow Nanosphere; Their Modified Electrode for Electrochemical Reduction and Determination of Hydrogen Peroxide, Ethanol and Oxidation of Bioactive Molecules

Semiconductor Heterostructure (SFT–SnO2) Electrolyte with Enhanced Ionic Conduction for Ceramic Fuel Cells

Electronic conduction inhibition, heterostructure construction, constituting built-in electric field (BIEF), and the generation of an energetically more active region in the lattice and at the interface are ways to increase the ionic conductivity (σi) of electrolyte materials for ceramic fuel cells (CFCs). The conduction of ions and stoppage of e– conductivity are of utmost importance in semiconductor-based electrolytes. Type-II heterojunction can be synthesized to improve fuel cell performance by increasing ionic conductivity. SFT (SrFe0.3Ti0.7O3)–SnO2 p–n heterojunction was produced by combining p-type SFT and n-type SnO2 semiconductors. The resulting SFT–SnO2 heterostructure unveiled a high ionic conductivity of 0.18 S/cm and an open-circuit voltage (OCV) of 1.04 V, contributing to a remarkable power output of 805 mW/cm2 at a low operating temperature of 520 °C. High ionic conductivity and efficient fuel cell performance are attributed to a synergistic interaction between the SFT/SnO2 heterojunction and BIEF. Heterojunction production between SFT and SnO2 was confirmed by numerous characterization techniques (X-ray diffractometer (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), UV–visible, ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS)). The SFT/SnO2 junction valence band deviation and energy band structure were also validated. Our research shows that the constructed heterostructure SFT–SnO2 is an effective and efficient electrolyte material for future fuel cell technology.

Wide bandgap Indium-doped SnO2 semiconductor prepared by sol-gel route: Multilayer fabrication and Low resistivity for solar cell application

Wide bandgap Indium-doped SnO2 semiconductor prepared by sol-gel route: Multilayer fabrication and Low resistivity for solar cell application

Study the optical and structural properties of SnO2 films grown by (APCVD)

In this research thin films from SnO2 semiconductor have been prepared by using (APCVD) on glass substrates. Our study focus on prepare SnO2 films with high optical quality at various temperature. The optical transmittance was measured by UV-VIS spectrophotometer. Structure properties were studied by using X-ray diffraction. (XRD) studies show that with increasing growth temperature from (350-500) 0C diffraction peaks becomes sharper indication to improve the crystallnaity, the (110) peak has strongest intensity in all films, grain size (31.5nm) was measured by using Scherrer equation .maximum transmission can be measured is (90%) at 400 0C.( AFM) where use to analyze the morphology of the tine oxides surface. Roughness and average grain size for different temperature have been investigated