Abstract
In this research thin films from SnO2 semiconductor have been prepared by using (APCVD) on glass substrates. Our study focus on prepare SnO2 films with high optical quality at various temperature. The optical transmittance was measured by UV-VIS spectrophotometer. Structure properties were studied by using X-ray diffraction. (XRD) studies show that with increasing growth temperature from (350-500) 0C diffraction peaks becomes sharper indication to improve the crystallnaity, the (110) peak has strongest intensity in all films, grain size (31.5nm) was measured by using Scherrer equation .maximum transmission can be measured is (90%) at 400 0C.( AFM) where use to analyze the morphology of the tine oxides surface. Roughness and average grain size for different temperature have been investigated
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