The adsorption and decomposition of methylsilane gas onto Cu(111) has been investigatedby reflection–absorption infrared spectroscopy (RAIRS). The initial adsorption ofmethylsilane at 15 K results in the formation of an initially ordered physisorbedmonolayer, adsorbed with a small tilt angle from the plane of the surface. Furtherincrease in exposure results in the formation of a more dense monolayer, withmethylsilane lying nearly parallel to the surface of the crystal, before the growth of thedisordered multilayer. Adsorption at 78 K appears to result in the formation of anSiH–CH3 species for which there is some evidence of further Si–Si coupling. At 295 K, methylsilane isobserved to adsorb with the Si–C axis perpendicular to the surface. Adsorption at 395 Kresults in the decomposition of methylsilane, with both Si–H and Si–C bond scission.Adsorbing CO at 15 K on the Cu/Si surface structure thus formed indicates that COadsorbs mostly in atop positions on Si atoms, suggesting that any metal atom sites areblocked by either adsorbed C or Si atoms.
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