Combining the effective-mass theory with valence-band anticrossing model, the electronic structures and optical gain of dilute bismuth (Bi) GaAs nanowires under the uniaxial stresses are studied. The calculations manifest the band gap of GaAs1−xBix nanowires will be lowered with increasing bismide composition and [100] direction uniaxial stress, which can cause the red shift of optical gain peaks of nanowires. Moreover, it is found that, although almost pure optical gain along z direction can be obtained via applying single [100] direction stress, the first gain peaks are hard to be tuned to the optimal optical communication band, which makes it possible to impose another small uniaxial stress along [001] direction simultaneously to further redshift the gain peaks, and the ultimate results prove that the effect under the joint uniaxial stresses is remarkable. Our investigations mean that GaAs1−xBix nanowires is suitable for optoelectronic devices in optical communication band through appropriate modulated methods.
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