Device Size Research Articles

Dual banyan network (DBN) design: A quantum-dot cellular automata (QCA) based approach

The inputs use a non-blocking internal process to distribute the data using address of the port of the receiver using a non-blocking interior multistage transmission architecture known as a dual banyan network (DBN). The DBN is a primary component in many communication and switching applications because it efficiently routes and switches data packets. This study shows how to construct a single-layer DBN using QCA. A single layer 2 × 2 crossbar network (CBN) with two inputs and two outputs is suggested and developed in QCA to create the proposed communication architecture. In this study, a 2 × 2 CBN is used as a preliminary building block to create a 4 × 4 DBN. We present a detailed analysis of the DBN design, including its architecture, functionality, and performance evaluation. For a fault-free crossbar switch design, the consequence of a fault that affects the control line is noticed and surpassed. Similarly, the proposed architectures' fault tolerance has been described by considering fault scenarios at the 2 × 2 CBN control lines. Considering the logic gates, number of clock cycles, and device size complexity of the designs are measured. All of the designs were implemented using QCADesigner software. The power dissipation of the suggested layouts.

Shear Thickening Fluid and Sponge-Hybrid Triboelectric Nanogenerator for a Motion Sensor Array-Based Lying State Detection System.

Issues of size and power consumption in IoT devices can be addressed through triboelectricity-driven energy harvesting technology, which generates electrical signals without external power sources or batteries. This technology significantly reduces the complexity of devices, enhances installation flexibility, and minimizes power consumption. By utilizing shear thickening fluid (STF), which exhibits variable viscosity upon external impact, the sensitivity of triboelectric nanogenerator (TENG)-based sensors can be adjusted. For this study, the highest electrical outputs of STF and sponge-hybrid TENG (SSH-TENG) devices under various input forces and frequencies were generated with an open-circuit voltage (VOC) of 98 V and a short-circuit current (ISC) of 4.5 µA. The maximum power density was confirmed to be 0.853 mW/m2 at a load resistance of 30 MΩ. Additionally, a lying state detection system for use in medical settings was implemented using SSH-TENG as a hybrid triboelectric motion sensor (HTMS). Each unit of a 3 × 2 HTMS array, connected to a half-wave rectifier and 1 MΩ parallel resistor, was interfaced with an MCU. Real-time detection of the patient's condition through the HTMS array could enable the early identification of hazardous situations and alerts. The proposed HTMS continuously monitors the patient's movements, promptly identifying areas prone to pressure ulcers, thus effectively contributing to pressure ulcer prevention.

Photonic-crystal-based hybrid wavelength-mode division multiplexer for SOI platforms

This paper presents a 12-channel hybrid wavelength-mode division multiplexer (WDM-MDM) based on 2D photonic crystals. The proposed device consists of microring resonators (MRRs) and asymmetric directional couplers (ADCs) to perform three-channel wavelength division multiplexing and four-channel mode division multiplexing operations, respectively. Each MRR can work bi-directionally, providing the same wavelength channels separately in two drop ports. The bus waveguides in the cascaded ADCs are optimized to convert the fundamental modes to the corresponding higher-order modes and are connected through taper regions for the smooth transition of modes. The designed device is simulated using the finite-difference time-domain solver, achieving a maximum channel spacing and insertion loss of 5.05 nm and 0.97 dB, respectively. The device size of the proposed WDM-MDM is 74.98µm×32.82µm. The fabrication tolerance study is performed for uniform over-etch and under-etch conditions. The temperature tolerance study on the resonant wavelength is performed, and the temperature coefficient shift of <0.0254nm/K is achieved. The proposed device can potentially increase the channel capacity for on-chip high-density optical interconnects.

High Frequency and Addressable Impedance Measurement System for On-Site Droplet Analysis in Digital Microfluidics

Digital microfluidics is a novel technique for manipulating discrete droplets with the advantages of programmability, small device size, low cost, and easy integration. The development of droplet sensing methods advances the automation control of digital microfluidics. Impedance measurement emerges as a promising technique for droplet localization and characterization due to its non-invasive nature, high sensitivity, simplicity, and cost-effectiveness. However, traditional impedance measurement approaches in digital microfluidics based on the high-voltage actuating signal are limited in sensing accuracy in practical applications. In this paper, we propose a novel droplet impedance sensing system for digital microfluidics by introducing a low-voltage and addressable measurement circuit, which enables impedance measurement over a wide frequency range. The proposed measurement system has also been used for detecting the droplet composition, size, and position in a digital microfluidic chip. The improved impedance sensing method can also promote the applications of the digital microfluidic, which requires high accuracy, real-time, and contactless sensing with automatic sample pretreatment.

Treatment of Iron-Induced Cutaneous Hyperpigmentation With Energy-Based Devices.

Iatrogenic cutaneous siderosis is a well-recognized dermatologic complication after parenteral iron infusion. The condition manifests as discrete, hyperpigmented patches near the site of injection. Most cases do not resolve spontaneously, leading to significant aesthetic and psychological distress to patients. A recent case of iatrogenic cutaneous siderosis at our institution prompted a systematic review of the efficacy of energy-based devices previously reported in the treatment of this condition. PubMed and Cochrane databases were searched for all peer-reviewed articles published using the following search terms: "iron OR heme OR hemosiderosis OR siderosis" and "hyperpigmentation OR staining OR tattoo." Articles reporting on energy-based devices in the treatment of iron-induced hyperpigmentation were included. A total of seven articles and 54 total patients were included in this review. All patients, including the patient treated at our institution, were female, with an average age of 44 years. Hyperpigmentation was most commonly associated with intravenous iron infusion (48/54, 89%), on the arm or forearm (44/54, 81%), and used for the treatment of underlying iron deficiency anemia (54/54, 100%). The application of six different nanosecond or picosecond quality-switched laser systems was reported in the treatment of cutaneous siderosis, with wavelengths ranging from 532 to 1064 nm. Spot sizes varied between 2 and 7 mm, with energy fluences spanning 0.5-40 J/cm2 depending on both the device and spot size. Outcomes were measured after an average of 5.4 laser treatments and 10.4 months, with over half of all reported patients experiencing complete clearance (27/50, 54%). Our patient received treatment inthree test areas withpicosecond alexandrite 785 nm, nanosecond Nd:YAG 532 nm, and picosecond Nd:YAG 532 nm devices. The nanosecond Nd:YAG 532 nm treated area demonstrated the greatest improvement,and the entire arm was subsequently treated with this device. Despite the often intractable nature of iatrogenic cutaneous siderosis, laser surgery is a reasonable and safe treatment modality for patients seeking cosmetic improvement of this dyschromia. Dermatologists should be aware of this entity and the efficacy of the energy-based devices currently in our armamentarium. A combination approach may need to be utilized with different wavelengths and pulsed widths to target iron pigment in both dermal and subcutaneous layers.

Fully Printed Multilayer Ceramic Capacitors Based on High-k Perovskite Nanosheets.

Printing technology enables the integration of chemically exfoliated perovskite nanosheets into high-performance microcapacitors. Theoretically, the capacitance value can be further enhanced by designing and constructing multilayer structures without increasing the device size. Yet, issues such as interlayer penetration in multilayer heterojunctions constructed using inkjet printing technology further limit the realization of this potential. Herein, a series of multilayer configurations, including Ag/(Ca2NaNb4O13/Ag)n and graphene/(Ca2NaNb4O13/graphene)n (n = 1-3), are successfully inkjet-printed onto diverse rigid and flexible substrates through optimized ink formulations, inkjet printing parameters, thermal treatment conditions, and rational multilayer structural design using high-k perovskite nanosheets, graphene nanosheets and silver. The dielectric performance is optimized by fine-tuning the number of dielectric layers and modifying the electrode/dielectric interface. As a result, the graphene/(Ca2NaNb4O13/graphene)3 multilayer ceramic capacitors exhibit a remarkable capacitance density of 346±12nFcm-2 and a high dielectric constant of 193±18. Additionally, these devices demonstrate moderate insulation properties, flexibility, thermal stability, and chemical sensitivity. This work shed light on the potential of multilayer structural design in additive manufacturing of high-performance 2D material-based ceramic capacitors.

Microscale Lateral Perovskite Light Emitting Diode Realized by Self-Doping Phenomenon.

High-definition near-eye display technology has extremely close sight distance, placing a higher demand on the size, performance, and array of light-emitting pixel devices. Based on the excellent photoelectric performance of metal halide perovskite materials, perovskite light-emitting diodes (PeLEDs) have high photoelectric conversion efficiency, adjustable emission spectra, and excellent charge transfer characteristics, demonstrating great prospects as next-generation light sources. Despite their potential, the solubility of perovskite in photoresist presents a hurdle for conventional micro/nano processing techniques, resulting in device sizes typically exceeding 50 μm. This limitation impedes the further downsizing of perovskite-based components. Herein, we propose a plane-structured PeLED device that can achieve microscale light-emitting diodes with a single pixel device size < 2 μm and a luminescence lifetime of approximately 3 s. This is accomplished by fabricating a patterned substrate and regulating ion distribution in the perovskite through self-doping effects to form a PN junction. This breakthrough overcomes the technical challenge of perovskite-photoresist incompatibility, which has hindered the development of perovskite materials in micro/nano optoelectronic devices. The strides made in this study open up promising avenues for the advancement of PeLEDs within the realm of micro/nano optoelectronic devices.

Perventricular device closure of the ventricular septal defects in children-first experience in the United Arab Emirates

BackgroundVentricular septal defect (VSD) is the most common congenital cardiac malformation, accounting for approximately 30% of congenital heart defects. Conventional surgical repair using cardiopulmonary bypass is invasive and associated with morbidities and prolonged hospital stay. With the advent of interventional approaches and availability of different occluding devices, the technique of perventricular device closure is evolving and being implemented successfully in larger groups of patients. We present herein, our initial experience of perventricular device closure for the ventricular septal defects in children to assess risks and benefits.MethodsFrom March, 2023 to February, 2024, we have performed perventricular closure of ventricular septal defects in 13 children, under guidance of transesophageal echocardiography without cardiopulmonary bypass support. The median age at operation was 2 year (range 1.3–10 years) with the median body weight 11 kg (range 8.7–16.6 kg). Sixty-nine percent were males. The ventricular septal defect sizes ranged from 2.7 to 6 mm (mean 4.7 mm). Seven defects were perimembranous, four sub-aortic and two were muscular. One patient also underwent pulmonary artery de-banding with pulmonary artery balloon angioplasty and other one patent ductus arteriosus ligation, concomitantly. For defect closure, we used ventricular septal defect occlusion device (MemoPart™, Lepu Medical Technology Company, China) through a 3-cm skin incision in the lower- third of the sternum. The device sizes ranged from 5 to 8 mm (mean 6.9+-1.8 mm) and all patients except for two required symmetrical devices.ResultsAll patients underwent device closure successfully. The procedural duration ranged between 32 and 52 min. None of the patients required cardiopulmonary bypass. The mean ventilation time and intensive care unit stay was 3 and 24 h, respectively. None of the patients required inotropic support or blood transfusions. Moreover, no patients developed any arrhythmias including heart block. The average length of hospital stay was 4.4 days. At the latest follow up, there were no residual shunts, conduction disturbances, device dislodgement or major aortic or tricuspid valve complications seen in any patients. There was no mortality.ConclusionsPerventricular device closure of ventricular septal defects is a less invasive, extremely safe and effective method in children. It is associated with very fast recovery, shorter hospitalization time and better cosmetic incision. Moreover, it avoids cardiopulmonary bypass. The modifications and refinements in the design, material and implantation techniques will help in expanding the indications and prevent complications in the long-term.

Reduction in Balloon Pump Size Reduces Axillary Intraaortic Balloon Pump Failure Risk.

Axillary artery intra-aortic balloon pump (axIABP) placement has been implemented as a bridging solution before heart transplantation. This study evaluates complications associated with axIABP support and describes an approach to minimize adverse events. We previously described a percutaneous approach for axIABP placement. However, patients receiving axIABP between September 1, 2017, and September 26, 2019 (n = 32) demonstrated a high rate of balloon pump malfunction (8/32; 25%) and other complications (totaling 15/32; 47%). Sixty-four patients were sequentially treated under a revised protocol. Compared to the initial cohort, no significant differences in demographics were noted. A significant reduction in rate of balloon malfunction (8/32, 25% vs. 1/64, 2%; p < 0.001) and total complications (15/32, 47% vs. 10/64, 16%; p = 0.0025) during the period of support were noted after intervention. Subsequent analysis of total complications per device size (40 vs. ≤ 34 ml balloon) revealed significantly reduced complications in patients with smaller devices (40% vs. 13%, respectively; p = 0.0022). This study provides guidelines to limit complications in patients supported with axIABP, facilitating a protracted period of bridging support.

Are comparable studies really comparable? Suggestions from a problem-solving experiment on urban and rural great tits

Performance in tests of various cognitive abilities has often been compared, both within and between species. In intraspecific comparisons, habitat effects on cognition has been a popular topic, frequently with an underlying assumption that urban animals should perform better than their rural conspecifics. In this study, we tested problem-solving ability in great tits Parus major, in a string-pulling and a plug-opening test. Our aim was to compare performance between urban and rural great tits, and to compare their performance with previously published problem solving studies. Our great tits perfomed better in string-pulling than their conspecifics in previous studies (solving success: 54%), and better than their close relative, the mountain chickadee Poecile gambeli, in the plug-opening test (solving success: 70%). Solving latency became shorter over four repeated sessions, indicating learning abilities, and showed among-individual correlation between the two tests. However, the solving ability did not differ between habitat types in either test. Somewhat unexpectedly, we found marked differences between study years even though we tried to keep conditions identical. These were probably due to small changes to the experimental protocol between years, for example the unavoidable changes of observers and changes in the size and material of test devices. This has an important implication: if small changes in an otherwise identical set-up can have strong effects, meaningful comparisons of cognitive performance between different labs must be extremely hard. In a wider perspective this highlights the replicability problem often present in animal behaviour studies.

P-730 A feasibility study of the impact of the level of exposure to ambient air pollutants on outcomes of assisted reproductive technologies

Abstract Study question What is the impact of air pollution exposure on outcomes for couples having IVF treatment? Summary answer Environmental exposure to high levels of air pollutants may negatively influence IVF outcomes with potential implications for fertility treatment. What is known already Air pollutants are harmful substances in the atmosphere that have adverse effects on human health. Increased levels of air pollutants have been associated with respiratory disorders, cardiovascular disease, and increased morbidity in humans across all age groups. Existing evidence suggests that increased exposure to air pollutants may adversely affect fertility. The relationship between air pollutants and IVF outcomes remains poorly understood. Study design, size, duration This was an ethically approved prospective observational feasibility study conducted over a two-year period. Ten couples due to undergo an IVF cycle were recruited from a fertility centre in the UK. Environmental exposure to ambient air pollutant for particulate matter (PM) 2.5 and 10 micron size was measured using portable AirBeam monitors over the course of two weeks from commencement of the ovarian stimulation regime. Participants/materials, setting, methods Eligible participants were those aged 18-35 years old, undergoing fresh IVF, with a good ovarian reserve and ability to provide informed consent. Data of interest included: BMI, age, parity, ethnicity, smoking status. IVF data included: number of oocytes retrieved, embryo quality and cycle outcomes. AirBeam device data was extracted, analysed and correlated with IVF outcomes. Participants feedback was sought for qualitative input for future studies. Main results and the role of chance Total of 28,269 data points of ambient air pollutant data for PM 2.5 and 10 micron size were recorded amongst the ten participants. One participant was exposed to significantly high air pollutant levels during ovarian stimulation on certain days (PM2.5 - 81.06 µg/m³ and PM10 - 154.48 µg/m³) compared to standard annual air pollution level for the UK of 25 µg/m³ for PM2.5 and 40 µg/m³ for PM10. Two women did not have embryo transfer due to embryo arrest. Of those who had transfer, 50% (n = 4) had positive pregnancy tests however three experienced early pregnancy losses. At the time of writing there was one ongoing single viable pregnancy. On correlation of air quality data with clinical outcomes, the one participant who exhibited fluctuant very high exposure levels to the measured air pollutants, had unexpected low fertilization rate (20%) with IVF and no transfer due to embryo arrest. Of the nine participants returning the questionnaire feedback, all but one rated it acceptable to most acceptable to carry the device around. The main barrier was the size of device and battery life. All respondents were willing to recommend others to participate in a future similar study confirming feasibility to recruit. Limitations, reasons for caution As a feasibility study, with a limited sample size, our findings should be interpreted cautiously. The small cohort limits the generalisability of our results. Further research with larger sample sizes is required to validate our findings. Wider implications of the findings Understanding the impact of air pollutants on IVF outcomes is important for developing evidence-based guidance and interventions to optimise fertility treatment efficacy. Our study demonstrates the feasibility of personal air quality monitoring and emphasises the necessity for larger scale research and the practicality of pollutant exposure measurements in fertility treatments. Trial registration number REC reference: 21/NE/0233 IRAS project ID: 294240. Theramex BIRTH Grant

Long-Term Outcomes of Percutaneous Trans-catheter Device Closure of Atrial Septal Defects During Teenage Life versus Adulthood

Abstract Aim and Objectives To evaluate the long-term follow up outcome of patients who underwent percutaneous trans-catheter closure of atrial septal defects during teenage life versus adulthood. Patients and Methods The study included 100 patients with secundum type ASD were treated by transcatheter closure of their defects. Two year after the procedure patients included in the study were subjected to thorough history taking, physical examination,12 leads surface electrocardiogram and Holter. Full 2D and Doppler echocardiographic study was performed in addition to Tissue Doppler Assessment of left ventricular function. Results At the 2 years follow up of transcatheter ASD closure, the RVEDD had decreased from 22.93±5.889 mm to 18±4.06 mm(P = 0.000). By comparing 2D echocardiographic parameters between teenagers and adults there was a highly significant difference in RV basal diameter (P = 0.004), RV systolic function (P = 0.000), RA area (P = 0.030). Mean PAP decreased from 18.37±4.796 mmHg to 14.77±4.75 mmHg (P = 0.022). RVSP decreased from 28.9±4.425 mmHg to 15.83±4.17 mmHg (P = 0.000). There was statistically significant difference regarding defect size (P = 0.037), device size (P = 0.038) and Holter findings (P = 0.042) while there was no statistically significant difference between both groups regarding mPAP, device type and ECG. Defect size was larger in adult group ranged from 9 to 33 mm with mean ± SD 15.57 ± 6.57 mm than teenagers ranged from 6 to 22 mm with mean ± SD 13.06 ± 5.18 mm. Also, incidence of arrhythmia in adults was higher than teenagers as follows: PACs was in 7 patients (14 %) in adult group while 3 patients (6 %) had PACs in teenagers group and paroxsymal AF was found in 4 patients (8 %) in adult group while no patients in teenagers develop AF. All the patients had normal sinus rhythm before closure and no one developed arrhythmia until 1 year after closure. 50 % of the patients had normal RV size at the 2-year follow up. Regarding Doppler parameters, mitral E/A ratio (P = 0.000) and lateral E/e' ratio (P = 0.041) had significant difference between adults and teenagers as shown in table (8) mostly related to age. Mitral E/A ratio in adults ranged from 0.7 to 1.5 with mean ± SD 1.06 ± 0.20 while in teenagers ranged from 1.1 to 1.8 with mean ± SD 1.45 ± 0.17. Lateral E/e’ ratio in adults ranged from 3 to 7.9 with mean ± SD 5.43 ± 1.24 while in teenagers ranged from 3 to 7 with mean ± SD 4.94 ± 1.13. Conclusion Transcatheter ASD closure leads to a significant improvement in heart cavity dimensions and RV function and reversal of electrical and mechanical changes. Novel parameters for assessment of RV function are promising and appear to be helpful for the assessment of RV function and its response to correction of volume. Key words: Atrial septal defect, arrhythmia, transcatheter closure, adults, teenagers. Abbreviations and Acronyms 2D: Two-Dimensional 3D:Three-dimensional ASD(s): Atrial septal defect(s) BSA: Body surface area CHDs: Congenital heart defects ECG: Electrocardiogram EF: Ejection fraction FAC: Fractional Area Change LA: Left Atrium mPAP: mean Pulmonary Artery Pressure RA: Right Atrium RAA: Right atrial area RBBB: Right Bundle Branch Block RV : Right Ventricle TEE : TransEsophgyeal Echocardiography TTE : TransThoracic Echocardiography

Design of a 1 × 3 Power Splitter Based on Multimode Interference in a Parabolic-Type Slot-Waveguide Structure

Multimode interference (MMI) couplers based on silicon slot-waveguide structures have received widespread attention in recent years. The key issues that need to be addressed are the size and loss of such devices. This study introduces a 1 × 3 silicon-based slot-waveguide multimode interference power splitter. The device uses a gallium-nitride slot-waveguide structure to reduce the length of the coupling region and decrease additional losses. To reduce the width of the coupling region, the multimode interference coupling area is designed with a parabolic-shaped structure. The introduction of a tapered structure between the input/output waveguides and the coupling region improves additional losses and non-uniformity. Furthermore, we conducted an analysis of the fabrication tolerances of the coupling region. In this paper, we use mode solution to simulate the design of the device in the 1550 nm optical wavelength range. The eigenmode expansion method is used to simulate and optimize the parameters of the device. The device is simulated using the eigenmode expansion solver. The simulation results show that the total length of the coupling region for the device is only 4 μm. The normalized transmission of the device is 0.992, and its excess loss and imbalance are 0.036 dB and 0.003 dB, respectively. The proposed power splitter can be applied to integrated optical circuit design, optical sensing, and optical power measurement.

3D packaging and Moore’s Law

Abstract This paper describes how the semiconductor industry has seen steady improvements in key metrics such as performance, power consumption, and area, but as the semiconductor industry shrinks in device size and the technical challenges of ever-increasing performance demands, it is critical to improve chip performance for maximizing the operating frequency of individual ICs and reducing their power consumption. But when talking about improving chip performance, it is important not to focus solely on the individual integrated circuit (IC), but to evaluate it as part of the overall system. For example, as microprocessor frequency increases, so does the demand for main memory data. However, if the connections between the chips that transfer data to the processor do not keep pace with the increase in performance, these connections can become a bottleneck in the performance of the entire system. Instead, this paper describes a typical architecture for semiconductor 3D integration, highlights the technology choices for 3D integration implementation, and analyzes and explains the design challenges it presents. After outlining the above, this paper also analyzes the applications and achievements of 3D integration technology in recent years.

Single entanglement connection architecture between multi-layer bipartite hardware efficient ansatz

Variational quantum algorithms are among the most promising algorithms to achieve quantum advantages in the noisy intermediate-scale quantum (NISQ) era. One important challenge in implementing such algorithms is to construct an effective parameterized quantum circuit (also called an ansatz). In this work, we propose a single entanglement connection architecture (SECA) for a bipartite hardware efficient ansatz (HEA) by balancing its expressibility, entangling capability, and trainability. Numerical simulations with a one-dimensional Heisenberg model and quadratic unconstrained binary optimization (QUBO) issues were conducted. Our results indicate the superiority of SECA over the common full entanglement connection architecture in terms of computational performance. Furthermore, combining SECA with gate-cutting technology to construct distributed quantum computation (DQC) can efficiently expand the size of NISQ devices under low overhead. We also demonstrated the effectiveness and scalability of the DQC scheme. Our study is a useful indication for understanding the characteristics associated with an effective training circuit.

Design and optimization of microchannel for enhancement of the intensity of induced signal in particle/cell impedance measurement.

The measured impedance signal of a single particle or cell in a microchannel is of the μA level, which is a challenge for measuring such weak signals. Therefore, it is necessary to improve the intensity for expanding the applications of impedance measurement. In this paper, we analyzed the impact of geometric parameters of microchannel on output signal intensity by using the three-dimensional finite element method. In comparison to conventional microchannels, which are distributed at a uniform height, the microchannels in this design use the height difference to enhance the signal intensity. By analyzing the effects of the geometric dimensions of the constriction channel, main channel height, radius of particles, types of cells, shapes of particles with different ellipticities, and particles spacing on the current signal, we concluded the optimal dimensions of these parameters to improve the intensity of the induced current signal. Through the fabrication of the optimized size of device and experimental demonstration, it is verified that the current signal intensity caused by the particle with a diameter of 10 µm is nearly twice that of the conventional structure with a height of 20 µm, which proves the correctness of the optimization results and the feasibility of this work. In addition, the performance of the device was verified by measuring the mixtures of different size particles as well as non-viable and viable yeast cells.

Review of Carbon Nanotube Field Effect Transistor for Nanoscale Regime

Background: The need for high performance, small size, low delay, low power consumption, and long battery backup of portable systems is increasing with the advancement of technology. Many features of portable systems can be improved using scaling methods. In the scaling process, reducing the size of devices causes serious difficulties, including the short channel effect (SCE) and leakage current, which degenerates the characteristics of the systems. Objective: In this review paper, a trending carbon nanotube field effect transistor (CNTFET) technology is discussed in detail. CNTFET can replace the conventional metal oxide semiconductor field effect transistor (MOSFET) technology to overcome the SCE problems in the nanoscale regime and also meet the requirements of portable systems. Methods: The CNTFET is an extremely good nanoscale technology due to its one-dimension band structure, high transconductance, high electron mobility, superior control over channel formation, and better threshold voltage. This technology is used to construct high-performance and low-power circuits by replacing the MOSFET technology. CNTFET in comparison to MOSFET takes the carbon nanotube (CNT) as a channel region. Results: The value of threshold voltage in CNTFET changes with the diameter of CNT. The threshold voltage of the devices controls many parameters at the circuit-level design. Hence, the detailed operation and the characteristics of CNTFET devices are presented in this review paper. The existing CNTFET-based ternary full adder (TFA) circuits are also described in this review paper for the performance evaluation of different parameters. Conclusion: CNTFET technology is the possible solution for the SCE in the nanoscale regime and is capable to design efficient logic circuits. The circuits using the CNTFET technology can provide better performance and various advantages, including fast speed, small area, and low power consumption, in comparison to the MOSFET circuits. Thus, CNTFET technology is the best choice for circuit designs at the nanoscale.

Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics

Electronic devices for advanced modern semiconductor based technology, mainly focus on the design regarding lighter, faster and more affordable solutions to meet the specifications of modern digital electronics. Some of the drawbacks for minimizing device size in MOSFET include gate insulator scaling, Short-Channel Effects (SCEs), shallow junction technology and off-state leakage current in MOSFET devices. In addition, the traditional SiO2 as a dielectric material contains restricted maximum capacitance as well as increased tunnel current leakage due to the thickness. Hence, a High-k dielectric is required to replace SiO2 to overcome the mentioned issues. In this model, the N-type MOSFET is designed based on the bi-layer high K-dielectric medium with optimized thickness according to the maximum capacitance and minimum threshold voltage, which are implemented on VLSI based applications such as 6 T SRAM for evaluating the performance. The drain current of HfO2, Al2O3 and HfO2+Si3N4 for 2.5 v drain voltage are 1.87 mA, 1.51 mA and 3.54 mA. Then, the read and write delay of the single and bi-layer MOSFET are 70.84 ps, 82.64 ps, 95.21 ps and 10.24 ps, 15.47 ps, 21.74 ps. Thus, the designed and simulated bi-layer optimized high k- dielectric medium for N-MOSFET with wild horse optimization performs better electrical characteristics than the single layer dielectric medium MOSFET.

Discovering ABO3-type perovskite with different dielectric constants via intelligent optimization algorithm

Nowadays, dielectric materials are playing an increasingly important role in various fields. A high dielectric constant (D) can store more charge per unit volume, improving performance, reducing device size, lowering D limit cross communication, and enabling better packaging of devices. Differentiating high D and low D has been recognized as a significant concern in electronics. However, calculating the dielectric constant from first principles is notoriously difficult. Therefore, it is essential to find important descriptors for predicting the dielectric constant (D) of different dielectric materials. In this work, a novel intelligence optimization approach was proposed based on data-driven methods to predict the dielectric constant (D) of ABO3-type perovskites. By applying the machine learning (ML) algorithm, key features strongly correlated with D were identified. To reduce feature dimension, Random Forest Regression-Gradient Boosting Regressor (RFR-GBR) feature screening, sure independence screening, and the sparsifying operator approach were employed to compress the feature set for creating valid descriptors. Furthermore, the Shapley additive explanation technique was used to reveal the scaling relation between the dielectric constant and the identified descriptors for predicting the D of ABO3-type perovskites. In addition, a hybrid artificial rabbits optimization algorithm and random forest regression were developed for predicting D, achieving remarkable predictive performance with an R2 score of 0.95, MAE of 0.23, and RMSE of 0.108 using five-fold cross-validation. Ultimately, from a pool of 300 candidate materials, we screened and identified two potential dielectric perovskites with different D values. The proposed framework will facilitate D prediction technology for the discovery of dielectric perovskite materials with favorable performance.

Noise coupling reduction using temperature enhanced device for future integrated circuit integration applications

&lt;p&gt;Information technology-to-internet of things may have succeeded because of fast silicon chip capability expansion. Moore's law, which reduces device size, boosted integrated circuit (IC) performance. Delay rises with highdensity connection parasitic capacitance. Interconnect delays have surpassed transistor delays and slowed progress. An alternative is required now to reduce connection latency. The third dimension is used in popular 3D IC technology IC technology requires through silicon via (TSV) for signal integrity and heat mitigation. Noise coupling hinders electrical communication between signal-carrying TSVs (aggressive TSVs) and ground TSVs (victim TSVs), a 3D IC bottleneck. TSVs must be dielectrically insulated from Si substrates to avoid electrical signal interference. Additionally, first-order modelling will confirm the suggestions. This article proposes using the nanosheet field effect transistor (NSFET) to overcome 3D IC noise coupling and complementary metal oxide semiconductor (CMOS) technology nodes. After discussing the electronic industry and sub nm, several basic metrics and criteria for developing electronic components are presented. The first technique uses Perylene-N's exceptional noise-cancelling characteristics. Second technique uses electrical TSV (ETSV), thermal TSV (TTSV), and heat source models to measure noise coupling on numerous ICs. The third proposes many noise-reducing materials. The suggested structures outperform traditional approaches.&lt;/p&gt;