Single-crystal Silicon Films Research Articles

Single Crystal Silicon Films on Non-conductive Substrate

Single Crystal Silicon Films on Non-conductive Substrate

Preparation and evaluation of epitaxial silicon films prepared by vacuum evaporation

Single crystal silicon films of both types have been deposited in a high (10 −5 torr) vacuum system. Electron beam heating, as well as resistive heating, were used to heat the sources. Low energy argon ion bombardment and thermal etching were used to clean the surfaces of the substrates. The investigated temperature range of the substrates was 1000–1300°C. Single crystal films by back reflection X-ray were obtained when the substrates were above 1125°C (1400°K), which is about 0.8 of the melting point (1700°K). Fast deposition rates ( 1 2 −1μ/min) gave the best films. Diodes and transistors were prepared from some of these films to obtain an indication of the p-n junction and interface perfection. The p-n junctions showed higher reverse bias leakage and thus less perfection than that observed with devices in crystals grown by the Czochralski method.

The vacuum evaporation of single crystal thin films of silicon

Using a vacuum of about 10-6mm, single crystal silicon films have been evaporated onto a silicon substrate. Source and substrate temperatures and the rate of deposition are critical parameters in attaining epitaxy with the substrate. Where the source silicon is heated in a crucible, the crucible material is important. Physical imperfections, doping and electrical characteristics of the films are discussed, together with devices made from them.